JP2000036508A - Apparatus and method for bonding bump - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve productivity and quality and to reduce a cost by providing an orientation flat position detecting means for detecting an orientation flat position of a wafer on a bonding stage at a transfer means. SOLUTION: After a wafer 1 is placed on a bonding stage by a transfer means for forming an outer periphery and an upper surface side of its vicinity of a stage plate 91, an orientation flat position detecting sensor 85 is moved to be disposed directly above an oblique portion 91a formed on the periphery of the plate 91. Respective detecting sensors 85 are aligned in a direction perpendicular to the transfer direction of the transfer means. That is, the wafer 1 is transferred onto the stage by the transfer means, and an orientation flat 1a position of the wafer 1 is detected by the two sensors 85 mounted on the way of a chuck lever 77B of the transfer means.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bump bonding apparatus for forming a bump for electrical connection on an electrode portion of an IC chip by a wire bonding technique, and more particularly to a method for forming a bump on an IC chip.
The present invention relates to a bump bonding apparatus and method for forming bumps in a state of a wafer before being divided into chips.

[0002]

2. Description of the Related Art In recent years, in particular, focusing on portable devices,
Various electronic devices are required to be further reduced in size and weight, and accordingly, ICs built in these electronic devices are required.
Chips are also significantly reduced in size. Therefore, IC
When providing bumps on the electrode portions of the chip, each IC chip obtained by dividing the wafer by dicing is
In a bump bonding apparatus of the type in which the individual chips are transferred to the bonding stage, and the bonding is performed by positioning, the production efficiency is poor, and handling such as transfer of IC chips and transport by tray is not easy.
Various technical difficulties arise, such as difficulties in accurate positioning.

Therefore, it is conceivable to form bumps on each IC chip in a state of a wafer before the IC chips are separated into individual chips by dicing. But,
As described below, even when bumps are formed directly on the wafer in the state of a wafer, there are various technical problems that are different from the case of the separated individual IC chip. It is necessary to solve these problems.

For example, wafers are stored in a stacked state on multi-stage shelves formed in a carrier and supplied to a bump bonding apparatus. However, since the wafers are stored in the carrier with a backlash, the wafers are stored. After being pulled out of the carrier and pulled out onto a positioning table to regulate the position, the wafer is transferred to a bonding stage. , An orientation flat) is formed, and the positioning table needs to regulate the center position of the wafer and accurately regulate the circumferential position of the orientation flat, and requires a rotary table and position regulating means from four directions. Configuration, the positioning takes a long time, and the wafer accommodated in the carrier vibrates during operation. There is a problem such as a fear Re also fly out.

In addition, while a large-area wafer is fixed,
If bumps are formed on the entire surface, the relative movement distance between the bonding head and the bonding stage becomes longer, and it is necessary to increase the length of the arm of the bonding work mechanism. Therefore, it is mechanically difficult to obtain sufficient accuracy. Problem. For this reason, the wafer is divided into a plurality of sections in the circumferential direction, and when the formation of the bumps in a certain section is completed, the wafer is rotated around its center to position the next section in the bump formation area and the bump is formed in that section. It is possible. At this time, if the stage on which the wafer is fixed is rotated, the stage is heated up to form bumps, so it is difficult to perform high-precision, stable positioning due to the thermal expansion and contraction of the rotating mechanism. In addition, it is conceivable to blow the swirling air to the lower surface of the wafer, lift the wafer and swivel it, and set the timing to stop the swirling visually by a worker or by a timer. Movement is likely to occur, the rotational position is likely to be uneven, and it is difficult to stably and properly position.

Therefore, the present inventor has conducted intensive studies in view of various technical problems including the above-mentioned problems that occur when directly forming bumps on a wafer in the state of a wafer. No. 3,230,64 proposed a bump bonding apparatus and a bump forming method capable of effectively dealing with these technical problems.

[0007]

According to the bump bonding apparatus and the bump forming method proposed by the inventor of the present invention, the above-mentioned conventional technical problems can be effectively solved, but the productivity is further improved. There are various technical problems to be further solved in order to improve the quality, reduce the cost, or improve the quality. For example, in the above-described conventional bump bonding apparatus, the wafers are stored in a stacked state on a multi-stage shelf formed in a carrier and supplied to the bump bonding apparatus, but the positioning when the wafer is transferred to the bonding stage can be easily performed. The take-out means for taking out the wafer from the carrier is provided with a position regulating means, whereby the orientation flat position is regulated in a predetermined direction in advance, and then the wafer is transferred to the bonding stage by a four-point gripping type chuck means. Further, the wafer is stored in the carrier by a manual operation of an operator (operator) of the bump bonding apparatus, and the operator moves the orientation flat in a predetermined direction so that positioning in a subsequent process is performed smoothly. It is necessary to carefully insert the wafer into the carrier while aligning the wafer so as to face.

[0008] Therefore, there are many opportunities for the operator to repeatedly and manually handle the wafer in order to align the orientation flat position, which increases the work load on the operator and increases the risk of damaging the expensive wafer. In addition, prior to the transfer to the bonding stage, the position of the wafer is preliminarily regulated, and this also increases the number of times the wafer is handled and increases the chance of damage. Further, when the outer peripheral portion of the wafer is gripped by the chuck, it is conceivable that a part of the gripping portion of the chuck is caught by the orientation flat. There is a risk that the center may shift, and there is a problem that even when the position of the bent wafer is regulated, the transfer of the orientation flat may occur when the wafer is transferred to the bonding stage.

In the above-mentioned conventional bump bonding apparatus, the detection of the orientation flat position on the bonding stage is performed by a detection sensor provided on the bonding stage. However, the temperature of the bonding stage is raised to about 300 ° C. In addition, the orientation flat detection sensor requires an expensive heat-resistant sensor, which is disadvantageous in that the cost increases. Further, conventionally, since the orientation flat detection sensor is provided only on one side of the bonding stage, the wafer is divided into a plurality of sections in the circumferential direction, and the wafer is sequentially rotated around its center to form bumps for each section. In this case, it is difficult to position the wafer. The bias air for biasing the wafer is also provided only in the direction in which the orientation flat detection sensor is provided. Although only one orientation flat detection sensor is provided, it is preferable that a plurality of orientation flat detection sensors be provided along a reference line of the orientation flat line (the outer peripheral cutting line of the wafer) in order to improve the accuracy of the orientation flat detection.

Furthermore, in the prior art, as described above, it has been proposed to divide a wafer into a plurality of sections in the circumferential direction and to sequentially rotate the wafer around its center to form bumps for each section. A configuration is disclosed in which the wafer is lifted by air and swirled, but at this time, the wafer heated by the bonding stage is cooled by the floating air, swirl or one-sided air. May adversely affect the wafer.

Further, on the bonding stage,
In the case where the wafer is lifted by air and turned, more stable wafer rotation is preferable in order to increase the accuracy of orientation flat detection. However, in the related art, it may be difficult to stabilize the wafer rotation under a predetermined condition depending on the kind of the material and the shape of the wafer. For example, for a wafer having a certain surface roughness, such as a wafer made of quartz or lithium tantalum, having a surface roughness higher than a certain level, a relatively strong air needs to be applied to the wafer because the coefficient of friction with the surface of the bonding stage is high and the slip is not good. However, when the air is strengthened, the air flow is significantly disturbed by the surface roughness of the back surface of the wafer, and it is difficult to stabilize the wafer rotation. Also, for a heavy wafer or a large wafer, relatively strong air is required to start turning, but strong air exerts a large inertial force, so at the end of the turning operation, the stopping accuracy is poor, The orientation flat may be erroneously detected.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and when bumps are directly formed on a wafer in a wafer state, productivity is further improved, cost is reduced, or quality is improved. It is a basic object of the present invention to provide a bump bonding apparatus and a bump forming method capable of achieving the above.

[0013]

Therefore, according to the first aspect of the present invention, a wafer positioned in advance so that an orientation flat formed on a part of the outer periphery faces a predetermined direction is bonded by a transfer means. In a bump bonding apparatus which is transferred on a stage and a bump is formed on the transferred wafer by a bonding head, the transfer means detects the orientation flat position of the wafer on the bonding stage. An orientation flat position detecting means is provided.

Since the orientation flat detecting means is provided on the transfer means as described above, the orientation flat detecting means is not exposed to a high temperature as in the case where such a detecting means is conventionally provided on the bonding stage side. Therefore, it is not necessary to use a heat-resistant detecting means. Further, since the orientation flat detecting means is movable in accordance with the moving operation of the transfer means, conventionally, the orientation flat detection direction is different from the case where the detection means is fixedly provided on one side of the bonding stage. It is no longer limited to one side of the bonding stage.

According to a second aspect of the present invention, in the first aspect, the detecting means is an optical sensor having a light emitting section and a light receiving section. It is characterized by being provided.

In this case, since the optical sensor is used as the detecting means, reliable orientation flat detection can be performed.
Since this is provided in the chuck means of the transfer means, the orientation flat can be detected from above the wafer (that is, from above the bonding stage), and the thermal influence from the bonding stage can be reliably avoided.

Further, according to a third aspect of the present invention, in the first or second aspect of the present invention, a plurality of the detecting means are arranged side by side in a direction orthogonal to the transfer direction of the transfer means. It is characterized by having.

As described above, by arranging a plurality of the detection means in a direction orthogonal to the transfer direction of the transfer means, a higher orientation flat detection accuracy can be obtained.

Further, in the invention according to claim 4 of the present application, in the invention according to claim 2 or 3, the outer peripheral portion of the bonding stage and the upper surface side in the vicinity thereof are formed in a slope shape with a predetermined angle. It is characterized by having.

Since the outer peripheral portion of the bonding stage and the upper surface in the vicinity thereof are formed into a slope at a predetermined angle, when the orientation flat is detected from above the wafer (that is, from above the bonding stage), When the orientation flat is located below the detection means,
The detection light from the light emitting section of the detection means is reflected on the slope in a direction different from that at the time of incidence. That is, even when the orientation flat is located below the detection means, the detection light is prevented from being reflected on the upper surface of the bonding stage and entering the light receiving portion of the detection means to hinder the orientation flat detection. Can be.

Further, according to a fifth aspect of the present invention, in the first aspect of the present invention, a pair of regulating rollers are provided on the left and right sides on the upper surface of the bonding stage. Floating air ejecting means for floating the wafer, swirling air ejecting means for swiveling the wafer, a first offset air ejector for abutting the swiveling wafer against a pair of regulating rollers, and swirling. A second biasing air outlet for holding the wafer in the state against the pair of regulating rollers on the other side is provided, and a switching means for switching air supply to the first and second biasing air outlets is provided. It is characterized by the following.

By adopting such a configuration, the wafer can be shifted to either side. In this case, since the orientation flat detecting means can be moved in accordance with the moving operation of the transfer means, the orientation flat detection direction is not limited to any one side of the bonding stage as in the related art. Can detect the orientation flat.

Further, in the invention according to claim 6 of the present application, a pair of right and left regulating rollers are provided on the upper surface of the bonding stage, a floating air jetting means for floating the wafer, and a rotating wafer. A turning air jetting means and a biasing air jet port for stopping the turning wafer against at least one of the pair of regulating rollers are provided, and a bonding head is provided to the wafer supplied on the bonding stage. In a bump bonding apparatus for forming bumps by means of a bump, the bonding stage is composed of a stage plate provided with each of the air ejection ports, and a heat block disposed below the stage plate. An air chamber that communicates with the outlet and temporarily stores air supplied from outside is provided. It is obtained by the.

By adopting such a configuration, the air supplied from the outside is stored in the air chamber and is heated to some extent before being jetted from the air jet port toward the lower surface of the wafer. Therefore, when the wafer heated in the bonding stage is levitated, swirled or biased by the air from the jet port, the temperature gradient of the cooling by the air can be made gentler than in the past, and the jetting can be performed. It is possible to prevent the cooling action by air from adversely affecting the wafer.

Further, in the invention according to claim 7 of the present application, a floating air jetting means for floating the wafer and a swirling air jetting means for turning the wafer are provided on the upper surface side of the bonding stage. In a bump bonding apparatus for forming bumps on a wafer supplied on a stage by a bonding head, it is required that, when the wafer is turned, the flow rate of air jetted to the back side of the wafer by the turning air jetting means is variable. It is a characteristic.

As described above, when the wafer is turned, the flow rate of the air ejected to the back side of the wafer is variable,
By changing the air flow rate according to the material, shape and size of the wafer, it is possible to supply air at a flow rate that realizes stable wafer rotation.

Further, according to an eighth aspect of the present invention, in the seventh aspect of the present invention, the plurality of swirling air jetting means are disposed on substantially the same circumference on the upper surface side of the bonding stage. A turning air jet, an air supply passage communicating at one end with the turning air jet, and branching at the other end, a normal turning air supply means provided at one of the branched air supply passages, Turning assist air supply means, which can be operated in addition to the normal turning air supply means, provided at the other end of the air supply passage. Accordingly, the flow rate of air jetted from the turning air jet port to the back surface side of the wafer is variable.

As described above, the supply of air at a predetermined flow rate is controlled by each of the air supply means provided at the other end of the air supply passage communicating with the plurality of swirling air jets, and the air is swept from the swirling air jets. Since the flow rate of the air ejected to the back side of the wafer is variable, the flow rate of the air can be changed according to the material, shape and size of the wafer to supply the air at a flow rate that realizes stable wafer rotation. In this case, since the air supplied by the respective supply means is jetted from the same air jet port, the transition from the fast turning to the slow turning of the wafer can be performed smoothly without interruption of the air supply. It is possible.

Further, according to a ninth aspect of the present invention, in the seventh aspect of the present invention, the plurality of swirling air jetting means are arranged on a first circumference on a bonding stage upper surface side. A turning air jet port, a turning assist air jet port arranged on the second circumference, and a normal air supply passage provided at one end of the other end of the air supply passage communicating with the turning air jet port. Turning air supply means, and a turn assist air supply which can be operated in addition to the normal turn air supply means, which is provided at one end of the other end of an air supply passage communicating with the turn assist air ejection port. Means for supplying a predetermined flow rate of air from each of the air supply means so that the flow rate of air ejected to the back side of the wafer is variable.

As described above, the supply of air at a predetermined flow rate is controlled by each of the air supply means provided at the other end of the air supply passage communicating with the plurality of swirling air jets. Since the flow rate of the air ejected to the back side of the wafer is variable, the flow rate of the air can be changed according to the material, shape and size of the wafer to supply the air at a flow rate that realizes stable wafer rotation.

Further, according to a tenth aspect of the present invention, in the above-mentioned eighth or ninth aspect, each of the air ejection ports of the turning air ejection means is provided on a bonding stage upper surface side. It is provided on the circumference corresponding to the peripheral portion of the wafer or in the vicinity thereof, or on the circumference further inside.

In this case, swirling air is blown out over a relatively wide range of the bonding stage, and the swirling force can be dispersed and applied to the entire back surface of the wafer, so that stable wafer swiveling is possible. This is particularly useful for large wafers.

Further, the invention according to claim 11 of the present application is the invention according to any one of claims 8 to 10, wherein at least one of the turning air supply means and the turning assist air supply means is provided. And the air flow rate can be controlled.

In this case, it is possible to finely and variably control the flow rate of the air ejected from the air ejection port when turning the wafer, and to change the air flow rate more smoothly,
The wafer rotation can be further stabilized.

According to a twelfth aspect of the present invention, in accordance with any one of the eighth to eleventh aspects, when the wafer is turned, the turning assist air supply means supplies turning assist air. By being supplied in stages,
It is characterized in that the flow rate of air ejected to the back side of the wafer is variably controlled.

In this case, since the flow rate of the turning assist air is increased stepwise from the start of the wafer turning, the flow rate of the air ejected from the air ejection port is changed more smoothly,
Wafer rotation can be started gently to prevent the wafer from jumping out.

Further, according to a thirteenth aspect of the present invention, in accordance with any one of the eighth to eleventh aspects, when the wafer is turned, the turning assist air supply means supplies turning assist air. By being supplied intermittently,
It is characterized in that the flow rate of air ejected to the back side of the wafer is variably controlled.

In this case, the turning assist air is intermittently supplied during the turning of the wafer, so that, for example, a wafer whose back surface has a certain roughness or more and which is easy to stop on the bonding stage can also be stabilized. It is possible to maintain the wafer rotation at a low speed.

Further, the invention according to claim 14 of the present application is the invention according to any one of claims 6 to 13, wherein the orientation flat position detecting means for detecting the orientation flat position of the wafer on the bonding stage is provided. It is characterized by being provided.

By adopting such a configuration, the orientation of the wafer after the rotation can be detected, and the direction of the wafer on the bonding stage can be confirmed.

Further, in the invention according to claim 15 of the present application, the wafer positioned in advance so that the orientation flat formed on a part of the outer periphery is oriented in a predetermined direction is transferred onto the bonding stage by the transfer means. In a bump bonding apparatus in which a bump is formed on the transferred wafer by a bonding head, the transfer unit includes:
It is characterized in that it is provided with a six-point holding type chuck means.

In this case, since the chuck of the transfer means is of a six-point grip type, even if a part of the grip portion of the chuck is caught on the orientation flat when the outer peripheral portion of the wafer is gripped by the chuck, four points are conventionally used. Unlike the case where a gripping chuck is used, the center of the wafer does not shift during chucking, and it is possible to effectively prevent the displacement of the orientation flat during transfer to the bonding stage.

Further, the invention according to claim 16 of the present application is directed to a loading station comprising a carrier capable of storing wafers in a stacked state at a predetermined interval from each other and a lifter for setting the carriers at predetermined vertical positions. A wafer taken out of the carrier by the take-out means is transferred onto a bonding stage by the transfer means, and bumps are formed on the transferred wafer by a bonding head. In the bump bonding apparatus, detecting means for detecting whether or not the orientation flat position of the wafer in the carrier is within a predetermined range from the reference position; and detecting the orientation flat position of the wafer within the predetermined range from the reference position by the detection means. And a notifying means for notifying the worker when it is detected that the object is not inside.

In this case, since the detection means is provided, it is possible to reliably determine whether or not the orientation flat position of the wafer is appropriate, and the determination result is notified to the operator by the notification means. The work load when the operator inserts and sets the wafer into the carrier is reduced, and the operation of correcting the orientation flat position is also simplified, so that the chance of manually handling the wafer is reduced. The detection means is more preferably provided on a lifter of the loading station.

According to a seventeenth aspect of the present invention, in the sixteenth aspect of the present invention, the detecting means is an optical sensor having a light emitting portion and a light receiving portion. It is characterized in that a plurality of them are arranged in a direction orthogonal to each other.

In this case, the orientation sensor can be reliably detected by using the optical sensor as the detecting means.
The detecting means itself and its mounting structure can be simplified. Further, by arranging a plurality of such detection means as described above, higher detection accuracy can be obtained.

Further, the invention according to claim 18 of the present application is directed to a bump bonding method for forming a bump on a wafer supplied on a bonding stage by a bonding head, wherein the bonding stage includes:
Providing floating air ejecting means for floating a wafer and turning air ejecting means for turning the wafer, and variably controlling an air flow rate ejected to the back side of the wafer by the turning air ejecting means when the wafer is turned. It is characterized by.

As described above, when the wafer is turned, the flow rate of the air ejected to the back side of the wafer is variable,
By changing the air flow rate according to the material, shape and size of the wafer, it is possible to supply air at a flow rate that realizes stable wafer rotation.

Further, the invention according to claim 19 of the present application is the invention according to claim 18 in which, when the wafer is turned,
Air is supplied stepwise from the turning air jetting means,
The present invention is characterized in that the flow rate of air blown to the back side of a wafer is variably controlled.

In this case, since the flow rate of the turning air is gradually increased from the start of the wafer turning, the flow rate of the air ejected from the air ejection port is changed more smoothly, and the turning of the wafer is started gently. The protrusion of the wafer can be suppressed.

Further, according to a twentieth aspect of the present invention, in the eighteenth aspect of the present invention, when the wafer is rotated,
Air is intermittently supplied from the turning air ejection means,
The present invention is characterized in that the flow rate of air blown to the back side of a wafer is variably controlled.

In this case, since the turning air is intermittently supplied during the turning of the wafer, for example, a wafer whose back surface has a certain roughness or more and which is easily stopped on the bonding stage is also stable. Wafer turning at low speed can be maintained.

Further, in the invention according to claim 21 of the present application, in any one of claims 18 to 20, an orientation flat position detecting means for detecting an orientation flat position of the wafer on the bonding stage is provided. It is characterized in that the orientation flat position of the wafer after the wafer rotation is detected.

In this case, by detecting the orientation flat position of the wafer after the rotation, the direction of the wafer on the bonding stage can be confirmed.

[0055]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below in detail with reference to FIGS. First, the overall arrangement of a bump bonding apparatus according to an embodiment of the present invention will be described with reference to FIG. This bump bonding apparatus targets a wafer 1 provided with an orientation flat (hereinafter, referred to as an orientation flat) having a disk shape and an outer peripheral portion thereof cut linearly so as to specify the direction of a crystal. It is. In this bump bonding apparatus, as a main configuration for forming bumps on each IC chip in a state of a wafer before the IC chips are individually separated by dicing, a loading station 2 into which a carrier containing a wafer 1 is loaded is provided. A transfer station 3 on the carry-in side where the wafer 1 drawn from the carrier is positioned, a bonding station 4 for forming the bumps, a transfer station 5 on the carry-out side where the wafers 1 on which the bumps 1 are formed are positioned, And an unloading station 6 for sequentially accommodating the wafers 1 on which the wafers 1 are formed in a carrier and unloading them are arranged at equal intervals on the line. In front of the movement line of the wafer 1, the wafer 1
A take-out means 7 for taking out the wafer 1 from the carry-in station 2 to the carry-in transfer station 3 and an insertion means 8 for inserting the wafer 1 from the carry-out transfer station 5 to the carry-out station 6 are provided. Further, a transfer means 9 for transferring the wafer 1 from the loading-side transfer station 3 to the bonding station 4 and transferring the wafer 1 from the bonding station 4 to the unloading-side transfer station 5 is provided at the front thereof. I have.

The bonding station 4 is provided with a bonding stage 10 comprising a heat stage for bonding by ultrasonic thermocompression bonding, and a bonding head 11 is provided at the rear thereof. The bonding head 11 is mounted on an XY table 12 which is supported so as to be movable in the X and Y directions and which can be moved and positioned at any position in the X and Y directions by an X axis motor 12a and a Y axis motor 12b. I have.

As shown in FIG. 2, the bonding head 11 includes a wire reel 13 and the wire reel 13.
The wire 14 from above is passed from above to a bonding operation mechanism 15 for bonding to the wafer 1 as a bonding object on the bonding stage 10.
A wire tensioner 17 that blows up the wire 14 from the wire reel 13 to the bonding operation mechanism 15 side in an upwardly curved state with air 16 to apply tension to the wire 14, and a wire guide 18 a of a clamper 18 in the bonding operation mechanism 15. A wire tensioner 21 for exposing the wire 14 upward to the air 20 and applying an upward tension to the wire 14 is provided, and the wire 14 from the wire reel 13 is supplied with a predetermined supply path by air 16 and 20. It is configured so that it can be supplied to the bonding work mechanism 15 without difficulty while floatingly supporting the tension.

As shown in FIGS. 2 and 3, the bonding operation mechanism 15 includes a clamper 1 that holds the wire 14.
8 and a capillary 22a into which the wire 14 is inserted at the tip
And formed ball 14a (see FIG. 4)
A horn 22 for applying ultrasonic vibrations to the torch and a torch 23 for discharging. A recognition camera 24 for visually recognizing the state of the bonding operation is provided at an upper portion, and displays a recognition image on a recognition monitor (not shown) and inputs a recognition signal to a data processing device (not shown). It is configured to process data. Further, a vertical electromagnetic drive unit 25 for reciprocatingly rotating the bonding operation mechanism 15 around a fulcrum shaft (not shown) to move the tip end up and down, and an open / close electromagnetic drive unit 26 for opening and closing the clamper 18 are provided.

The bonding operation will be described with reference to FIG. 4. The wire 14 is sent out through the capillary 22a, and each time the bonding head 11 moves to a position facing the predetermined electrode 27 of the wafer 1, the torch 23 is moved.
The tip portion is melted by the spark current from, and a ball 14a is formed as shown in FIG. The position of the wire 14 facing each electrode 27 is controlled with high precision under the visual recognition of the recognition camera 24. Formed ball 1
4a is bonded on the electrode 27 of the wafer 1 by thermocompression bonding and ultrasonic vibration as shown in FIG. The pressing force at this time is preferably about 30 g to 50 g, the ultrasonic vibration is applied in the horizontal direction, the amplitude is 0.5 μm, and the frequency is 60 to 50 g.
It is preferable to be about 70 KHZ (specifically, 63.5 KHZ). Next, the wire 14 is cut by the upward movement of the clamper 18 and the capillary 22a holding the wire 14 as shown in FIG.
7 on the ball 14a and 30 .mu.m from the ball 14a.
A bump 28 having a protruding length of about 60 μm and a wire portion 14 b protruding to a height of about 40 μm are formed.
As the wire 14, a wire having a high Young's modulus and a low thermal conductivity is used so that the above-mentioned cutting is reliably performed at a predetermined position.

Next, movement, transfer, and positioning of the wafer 1 between the stations 2 to 6 will be sequentially described.
First, the carriers 30A and 30B for loading and unloading the wafer 1 will be described with reference to FIG. Carrier 3
Reference numerals 0A and 30B denote a plurality of wafers 1 which are stacked in a stacked state with a suitable interval between the upper and lower wafers. A multi-stage (24-stage in the illustrated example) receiving shelf row 32 composed of a substantially rectangular frame-shaped frame body narrowed in a shape, and supporting both sides of each wafer 1 by fitting into both side walls 31 thereof.
Are formed. On the lower surface of the H-shaped bottom wall 33, a rib 34 protruding in the left-right direction is protrudingly provided.

The carry-in station 2 is provided with a lifter 40A shown in FIGS. 6 and 7, and a carry-in carrier 30A is mounted on the lift table 41 from above. Lifting table 41
Is a slide bearing 44 with two right and left vertical guide shafts 43 whose upper and lower ends are held by a fixed frame 42.
The servomotor (not shown) attached to the back of the fixed frame 42 and a timing belt 46 driven forward and reverse by the servomotor (not shown) are configured to move up and down. On the upper surface of the elevating table 41, four positioning pins 47 for engaging and positioning with the positioning portion 35 of the carrier 30A are provided in a protruding manner. Further, a pressing lever 48 urged toward a horizontal posture by a spring 49 so as to be able to retreat and rotate upward is provided so as to elastically press the carrier 30A on the elevating table 41 from above. The carrier 30 is moved by the elevating operation of the elevating table 41.
Each wafer 1 accommodated in A is positioned at a predetermined take-out height position sequentially from the lowest one. The ascending limit position and the descending limit position of the lift table 41, the safety stop position when they are exceeded, and the origin position are determined by the fixed frame 4.
2 is detected by a limit switch 58 provided on the front surface of the second switch.

Further, with the unloading direction of the wafer 1 from the carrier 30A being the front, a pair of positioning members engaging with both sides of the rear edge of the wafer 1 in the carrier 30A are provided at the rear portion (right end portion in the drawing) of the lifting table 41. A bar 50 is provided upright. Further, in the lifter 40A, the carrier 30A of the wafer 1 is used.
A shutter 51 that extends from the fixed frame 42 so as to enter the front surface of the carrier 30A and substantially engage with the orientation flat 1a of the wafer 1 housed therein in order to prevent jumping out of the carrier 30A. The lower end of the shutter 51 is located slightly above the take-out height position of the wafer 1,
It is arranged so as not to interfere with the take-out operation. The shutter 51 is attached to a sliding member 53 supported on a rear side of the fixed frame 42 by a slide guide 52 so as to be movable in a take-out direction, and urges the slide member 53 backward in the take-out direction. A spring 54 is provided. In this shutter mechanism, the shutter 51 is set to stop at a position where a minute gap (about 0.5 mm) is left between the shutter 1 and the orientation flat 1a in a state where the wafer 1 contacts the positioning bar 50.

Further, the lifter 40A is provided with a detecting means for detecting the direction of the wafer 1 stored in the carrier 30A based on the position of the orientation flat 1a. That is, near the upper end of the fixed frame 42,
An arm member 57 extending along the front portion of the lift table 41 is attached.
In order to detect whether or not the position of the orientation flat 1a of the wafer 1 within 0A is within a predetermined range, two detection sensors 56
(56A and 56B) are arranged side by side in a direction perpendicular to the direction of taking out from the carrier 30A. In the present embodiment, an optical sensor including a light emitting unit and a light receiving unit is used as the detection sensor 56.

The detection operation of the detection sensor 56 for various states of the wafer 1 in the carrier 30A will be described with reference to FIGS. 8A to 8D. FIG. 8A shows a state where an arc portion of the wafer 1 is applied to one sensor 56A.
In this state, the orientation flat 1a of the wafer 1 is not oriented in the unloading direction, and it is detected that the position of the orientation flat 1a is not appropriate. FIG. 8B shows a state where the arc portion of the wafer 1 is applied to both the sensors 56A and 56B.
In this state, the orientation flat 1a of the wafer 1 is substantially opposite to the unloading direction, and it is detected that the position of the orientation flat 1a is not appropriate. Further, FIG. 8C shows a state in which the orientation flat 1a of the wafer 1 is applied to one sensor 56A. In this state, although the orientation flat 1a is oriented in the take-out direction, the orientation flat 1a is inclined by a predetermined angle or more with respect to the arrangement direction of the sensors 56A and 56B.
Is detected to be incorrect. In the state shown in FIG. 8D, the orientation flat 1a of the wafer 1
It is stored so as to be parallel to the arrangement direction of 6A and 56B. In this state, the wafer 1 is properly stored in the carrier 30A, and is not detected by any sensor. In this orientation flat position detection, the orientation flat 1a
If it is detected that the position is not within the predetermined range,
The worker is notified by a predetermined notifying means (not shown) such as an alarm sound or an alarm lamp, and the worker
The position of the wafer 1 in A is manually corrected.

With the detection means as described above, when storing the wafer in the carrier 30A, it is not necessary to adjust the position of the orientation flat 1a in a predetermined direction, and it is sufficient to correct the position of only the wafer 1 for which an error is detected. Thus, the burden on the operator can be reduced, and the opportunity for the operator to manually handle the wafer 1 can be reduced.

FIG. 9 shows a lifter 40 B of the unloading station 6. The lifter 40B is also in the loading station 2
Has substantially the same configuration as the lifter 40A in FIG. 7, and in the following description, corresponding components are denoted by the same reference numerals, and further description is omitted. In the lifter 40B, since the positioning bar 50 and the sensor 56 of the sliding member 53 are unnecessary, they are not provided, and a carrier presence / absence detection sensor 59 for detecting the presence / absence of the carrier 30B is provided. In addition,
In this lifter 40B, the shutter 51 may be fixedly provided.

Next, the wafer extracting means 7 and the inserting means 8
Will be described with reference to FIG. Since both have almost the same configuration, the description will be made by taking up the wafer extracting means 7. In FIG. 10, a lower portion of the movable support member 63 is supported by a slide guide 61 disposed on the back side of the front fixed frame 60 so as to be reciprocally movable in the left-right direction (the direction in which the wafer 1 is taken out). It is connected to a movable portion 62a of a rodless cylinder 62 disposed on the back side of the fixed frame 60, and is configured to be able to be driven and positioned. A base 65a of a support arm 65 is mounted on the upper portion of the movable support member 63 via a slide guide 64 so as to be movable in the moving direction of the movable support member 63, and is provided on the side of the lifting table 41 (see FIG. 6) of the support arm 65. Wafer receiving portion 6 that receives and supports wafer 1 from below at the extended end portion
The wafer receiving portion 66 is provided with a suction chuck 67. Base 65a of support arm 65
Is urged by the spring 68 toward the lift table 41 to a position where it comes into contact with the stopper 69. When the wafer receiving portion 66 collides with an obstacle during the movement and moves against the spring 68, Is provided, and the operation is immediately stopped to prevent breakage.

In the pull-out operation by such a wafer pull-out means, first, the wafer receiving portion 66 at the tip of the support arm 65 is inserted below the currently lowest wafer 1 in the carrier 30A, and in this state, the lifting table 41 is lowered. Thus, the wafer 1 is supported on the wafer receiving portion 66. Thereafter, the wafer 1 is transferred to the wafer receiving portion 66 by the suction chuck 67.
The carrier 30A is pulled out from the carrier 30A to the loading-side transfer station 3 while being sucked. On the other hand, in the operation of inserting the wafer 1 into the carrier 30B by the wafer insertion means 8, the wafer 1 on which the bumps have been formed is conveyed while being sucked to the wafer receiving portion 66 in the unloading side transfer station 5, and is transferred into the carrier 30B of the unloading station 6. Inserted.

Next, the transfer means 9 will be described with reference to FIGS.
This will be described with reference to FIG. FIG. 11 is an overall perspective view of the transfer means 9. A moving table 72 is provided which is driven by a moving means 71 parallel to the moving line of the wafer 1 and is capable of moving and positioning between the loading side transfer station 3, the bonding station 4 and the unloading side transfer station 5. I have. The moving means 71 is configured to rotationally drive a ball screw 73 disposed in the moving range by a servomotor 74, and a nut body screwed to the ball screw 73 is fixed to the moving body 72. The moving body 72 includes an elevating body 75
Is movably attached to the upper limit position by a spring 75a, and is driven to move to the lower limit position by a built-in cylinder. A chuck means 76 extends from the upper end of the elevating body 75 directly above the moving line of the wafer 1.

The chuck means 76 includes a cylinder 76a
A pair of chuck rods 77A that can be approached and separated from each other by
And a chuck rod 77B extending horizontally between the chuck rods 77A. In the chuck rod 77A,
A pair of chucking pins 78A are vertically provided via a floating mechanism 79A. On the other hand, a pair of chucking pins 78B that can be approached and separated from each other by a cylinder (not shown) are vertically provided on the chuck rod 77B via a floating mechanism 79B. At the lower ends of the chucking pins 78A, 78B, flanges 78a, 78b for preventing the wafer 1 from dropping are provided, respectively.
Incidentally, the chuck means 76 can change the mounting position of the chucking pins 78A and 78B on the chuck rods 77A and 77B, thereby changing the wafers 1 of various sizes.
It is possible to correspond to.

Further, two detection sensors 85 (85) are provided in the middle of the chuck rod 77B via a bracket member 84.
A and 85B) are attached. Although various modes are conceivable as the detection sensor 85, an optical sensor including a light emitting unit and a light receiving unit is used as in the orientation flat detection sensor 56 in the loading station 2.
As will be described in detail later, in the present embodiment, the orientation sensor or the rotation failure of the wafer 1 placed on the bonding stage 10 is detected by the detection sensor 85 provided in the chuck means 76. In this case, the detection sensor 85 can detect the position of the orientation flat 1a from above the bonding stage 10, and can reliably avoid the influence of heat from the bonding stage 10.

When the wafer 1 is transferred by the transfer means 9, first, the chuck means 76 is opened in the transfer-side transfer station 3 or the bonding station 4, that is, the chuck rods 77A are separated from each other, With the chucking pins 78B of the rod 77B separated from each other, the lifting / lowering body 75 is lowered, and the chucking means 76 is closed, whereby the six chucking pins 78A and 78B grip the wafer 1 at six points on the outer peripheral portion. Next, the elevating body 75 is moved up to the upper limit position, and the moving means 71 drives the moving body 72 connected to the movable portion 62a of the bonding rodless cylinder 62 (see FIG. 10). A base 65a of a support arm 65 is mounted on the upper part of the movable support member 63 via a slide guide 64 so as to be movable in the moving direction of the movable support member 63, and is moved to the position of the bonding station 4 or the unloading side transfer station 5. By lowering the elevating body 75 and opening the chuck means 76, the wafer 1
Can be transferred.

As described above, when the outer peripheral portion of the wafer 1 is gripped by the chuck means 76, the chucking pins 78A,
Even if any of 78B hits the orientation flat 1a,
Conventionally, there is no fear that the center of the wafer is displaced during chucking as in the case of using a four-point holding type chuck means, and it is possible to effectively prevent the displacement of the orientation flat during transfer to the bonding stage 10. .

Next, the bonding stage 10 will be described with reference to FIGS. The bonding stage 10 includes a stage plate 91 and a heat block 92 thereunder.
A pair of regulating rollers 93A and 93B are provided on both sides of the stage plate 91 so that the wafer 1 can be fitted with a margin.
The regulating portions 95A and 95B having a pair of abutting rollers 94A and 94B that engage with the roller 1 are disposed so as to face the regulating roller pairs 93B and 93A located on the opposite sides, respectively, and regulate the wafer 1 by the regulating portion 95A, for example. The position of the wafer 1 is regulated by pressing against the roller pair 93B. The restricting portions 95A and 95B are constantly urged in a restricting direction by a spring 96, and a cylinder (not shown) for driving to move in the restricting releasing direction is arranged on the back side of the stage plate 91. The stage plate 91 has a suitable size according to the size of the wafer 1 to be bonded.

The stage plate 91 has the wafer 1
A suction / floating air port 101 for suction / floating of air, a swirling air jet port 102 opened obliquely in the same direction in the circumferential direction so as to swivel the wafer 1, and a swirling wafer 1 First and second bias air outlets 103A, 103A for holding wafer 1 against one of a pair of regulating rollers 93A or 93B so as not to wobble and wobble.
3B. The air supply to the first and second bias air outlets 103A and 103B is valve-controlled, and can be switched by a predetermined switching means (not shown). First and second bias air outlets 103A and 103A
3B is a radius of the swirling airflow so as not to interfere with a swirling airflow ejected from a swirling air jet 102 provided in a portion corresponding to a vicinity of a wafer peripheral portion so as to surely swirl the wafer 1. Is placed inside the
The floating / air port 101 is disposed outside and inside the radius of the swirling airflow. Also, the stage plate 91 is provided with an appropriate bonding portion 104
Are provided, and a suction hole 104a for sucking a chip for discard bonding is provided. Further, when the wafer 1 has a crack or a chip, a suction hole 108 for the wafer having a crack or a chip is provided in order to perform the bonding by suction-fixing the wafer 1.

In the present embodiment, in the stage plate 91, the first and second offset air jets 103
By providing A and 103B, the wafer 1 in the swiveling state can be biased to any of the regulating roller pairs 93A and 93B. In this case, the orientation flat position detection sensor 85 attached to the chuck means 76 of the transfer means 9 is movable with the movement operation of the transfer means 9, so that the orientation flat 1a is provided on any side.
Can be detected.

Further, as can be seen from FIG. 17, air paths 91a and 92a are provided in the stage plate 91 and the heat block 92, respectively. Route 91a
And 92a through the air port 10 for both suction and floating.
1. The air is supplied to the turning air outlet 102 or the one-way air outlet 103. The heat block 92
Inside, an air chamber 92b is provided, which communicates with the air outlets and temporarily stores air supplied from outside through the air paths 91a and 92a. This allows
The air supplied from the outside is warmed to some extent before being stored in the air chamber 92b and jetted from each air jet port toward the lower surface of the wafer 1. Therefore, the wafer 1 heated on the bonding stage 10
However, when the air from each of the above air outlets causes the air to float, swirl, or shift, the temperature gradient of cooling by the air can be made gentler than in the past, and the cooling action by the ejected air reduces the wafer. 1 can be prevented from being adversely affected.

In this embodiment, six cartridge heaters 105 are inserted into the heat block 92 in parallel, and two heaters
The three thermocouples 106 corresponding to No. 5 are embedded, and the temperature control of the heat block 92 (temperature control up to about 300 ° C. in the present embodiment) is performed by three systems. The heat block 92 is supported by a pair of left and right leg members 107 having high heat dissipation. in this way,
By providing a plurality of temperature control means for the heat block 92, the temperature of each heater pair 105 can be individually controlled. In this case, precise temperature control can be performed according to the size of the stage plate 91 on the heat block 92 selected according to the size of the wafer 1 to be bonded.

When the wafer 1 is transferred onto the bonding stage 10 by the transfer means 9, first, the two detection sensors 85 attached to the middle of the chuck rod 77 B in the transfer means 9 are moved. With this, the position of the orientation flat 1a of the wafer 1 is detected. In the present embodiment, the outer peripheral portion of the stage plate 91 and the upper surface side in the vicinity of the stage plate 91 are formed in a slanted shape at a predetermined angle. As can be clearly understood from FIG. 18, the detection sensor 85 is moved so as to be located directly above the inclined portion 91a formed on the outer peripheral portion of the stage plate 91. At this time, the two detection sensors 85 are arranged side by side in a direction orthogonal to the transfer direction of the transfer means 9.

When the position of the orientation flat 1a is detected from above the wafer 1 (that is, from above the bonding stage) by using the two detection sensors 85, the detection operation for various states of the wafer 1 will be described first. 8 is the same as the detection operation of the two orientation flat detection sensors 56 in the loading station 2 described with reference to FIG. That is, when a part of the wafer 1 is located directly below any of the detection sensors 85, the detection light from the light emitting unit of the detection sensor 85 is reflected on the upper surface of the wafer 1 in the same direction as when the light is incident. It is detected that the position of the orientation flat 1a is not appropriate. On the other hand, when the wafer 1 is out of the detection sensor 85, it is determined that the position of the orientation flat 1a is appropriate.
In this case, the detection light from the light emitting portion of the detection sensor 85 is reflected outward by the inclined portion 91a.

The inclined portion 91a for reflecting the detection light from the detection sensor 85 may be set at any angle as long as the reflection light avoids the surrounding reflective objects such as the chuck means 76. With reference to FIGS. 19A and 19B, a description will be given of the reflection function of the detection light with respect to the inclined portions 91a having different inclination angles. FIG. 19a shows that 30
An inclined portion 91a having an angle of ° is shown. The detection light from the detection sensor 85 is reflected by the inclined portion 91a, and further reflected on the upper surface of the stage 10 and jumps out. In this case, the reflected light does not enter the detection sensor 85. FIG. 19b shows 45 ° with respect to the vertical direction.
Are shown as inclined portions 91a. In this aspect, the opposed inclined portion 91b is formed together with the inclined portion 91a, and the detection light from the detection sensor 85 is reflected by the inclined portion 91a, further reflected by the opposed inclined portion 91b, and jumps out. Also in this case, the reflected light does not enter the detection sensor 85. Further, FIG. 19c shows the inclined portion 91a forming an angle of 60 ° with respect to the vertical direction. In this case, the detection light from the detection sensor 85 is transmitted to the inclined portion 9.
The reflected light does not directly enter the detection sensor 85 because it is reflected by 1a and jumps outward.

In this manner, the inclined portion 9 having a predetermined angle
When the position of the orientation flat 1a is detected from above the wafer 1, when the position of the orientation flat 1a is appropriate, the detection light from the light emitting unit of the detection sensor 85 is detected by the inclined portion 91a. The light is reflected in a direction different from that at the time of incidence. That is, it is possible to eliminate the possibility that the detection light is reflected on the upper surface of the bonding stage 10 and enters the light receiving portion of the detection sensor 85 to hinder the position detection of the orientation flat 1a.

In the bump bonding step by the bonding stage 10, first, when the wafer 1 is transferred by the transfer means 9 to the inside of the pair of control rollers 93A and 93B on the bonding stage 10, the control portion on the left side in the figure is used. 95B performs a regulating operation, and the contact roller 94B engages with the orientation flat 1a to press the wafer 1 toward the right regulating roller pair 93A. At this time, air is blown to the wafer 1 from the first biasing air ejection port 103A, and the wafer 1 is engaged with the regulating roller pair 93B. The position of the wafer 1 is regulated by the contact roller 94B and the regulating roller pair 93A. In this state, the wafer 1 is suction-fixed by the suction / floating air port 101, and the I
A bump is formed on the C chip.

Next, the suction of the wafer 1 and the restriction by the restriction portion 95B on the left side are released, and the air port 10 for both suction and floating is released.
1, the wafer 1 is floated by blowing air, and the air is blown out from the second biasing air ejection port 103B to engage the wafer 1 with the pair of regulating rollers 93A on the right side in the drawing. A predetermined flow rate of air is blown from the outlet 102 to rotate the wafer 1. In this manner, by engaging the wafer 1 with the pair of regulating rollers 93A while the wafer 1 is being swung, the wafer 1 can be swung at a fixed position without whirling and wobbling. During this turning operation, the detection sensor 85 is turned on by the heat stage 9.
The transfer means 9 is moved so as to be located right above the inclined portion 91a provided on the outer peripheral portion on the right side of the first device 1. When the wafer 1 is turned to the position where the orientation flat 1a of the wafer 1 is opposed to the right regulating portion 95A, the detection sensor 85
As a result, the orientation flat 1a of the wafer 1 is detected. Here, the orientation flat 1
Since a is detected, the orientation flat can be detected with high accuracy without being affected by the swirling flow rate of the wafer 1. Further, since the detection sensor 85 can move above the bonding stage 10 in accordance with the moving operation of the transfer means 9, even when a turning failure such as excessive turning occurs, the detection sensor 85 can be used. By moving the orientation flat 1a to a position where overturning of the orientation flat 1a can be detected, it is possible to reliably detect a turning failure. When a relatively small and light wafer such as a wafer having a diameter of 3 inches is targeted, the wafer rotation is likely to be unstable at the initial stage of the floating and the rotation. Thus, the orientation flat 1a is detected.

Subsequently, the right regulating portion 95A is regulated, the contact roller 94A is engaged with the orientation flat 1a, and the wafer 1 is pressed against the left regulating roller pair 93B, thereby regulating the contact roller 94A. The position of the wafer 1 is regulated by the roller pair 93B. Then, the wafer 1 is suction-fixed by the suction / floating air port 101, and the bonding head 11 forms bumps on the IC chip in the remaining half of the wafer 1 on the side closer to the bonding head 11. Then, the bump formation on the entire surface of the wafer 1 is completed. In this manner, by forming the bumps on the wafer 1 in half regions at a time, the moving range of the bonding head 11 can be reduced.
Stiffness and dimensional accuracy can be ensured, and highly accurate bump formation can be realized.

Next, an outline of a bonding process to each IC chip on a wafer by the bump bonding apparatus according to the present embodiment will be described with reference to flowcharts of FIGS. When the system is started by driving the bump bonding apparatus, first, in step # 1, the wafer is preheated. The wafer 1 is heated to about 150 ° C. or more (about 300 ° C. in some cases) by the bonding stage 10, but such preheating causes a problem such as the wafer 1 being cracked due to a rapid temperature rise. Can be prevented. This preheating can be performed by various methods. For example, after taking out the wafer 1 from the carrier 30 and before transferring the wafer 1 to the bonding stage 10, the preheating is performed at a separate preheating station (not shown). Is also good. Immediately before taking out the wafer 1 from the carrier 30, preheating may be performed in a separate preheating station, and the wafer 1 may be inserted into the carrier 30 again. The preheating condition is appropriately determined based on the heating temperature of the bonding stage 10 and the like.

Next, the wafer 1 preheated to a predetermined temperature is transferred onto the bonding stage 10 by the transfer means 9 (Step # 2). At this time, as described above, in a state where the wafer 1 is preliminarily positioned, the wafer 1 is gripped and transferred by the six-point gripping type chuck means 76. Then, the wafer 1 is held on the bonding stage 10 for a certain time to stabilize the temperature of the wafer 1 (step # 3). As a result, the overall distortion of the wafer 1 ("warpage" due to heat) caused by the preheating is corrected. Then, in step # 4, the orientation flat direction of the wafer 1 is detected. At this time, the wafer 1 is lifted by the floating air, and is shifted to one of the right and left sides (for example, the left “L”) by the shifting air, and the orientation flat direction is detected in this state.

If the detection result in step # 4 is OK (good), both the floating and the one-sided are OFF.
(Stop), and the wafer 1 is suction-fixed to the surface of the bonding stage 10 (Step # 7). On the other hand, if the detection result in step # 4 is NG (defective), the wafer 1 is turned by the turning air (step # 5), and after stopping the turning, the orientation flat direction is detected again (step # 5). # 6) Steps # 5 and # 6 are repeatedly executed until the detection result is OK. Then, when the detection result in step # 6 becomes OK, the wafer 1 is sucked in step # 7.

After the detection of the orientation flat direction on the bonding stage 10 is completed as described above, the position of the wafer 1 is adjusted. That is, in step # 12, the left regulating portion 95 is driven to engage the contact roller 94 with the orientation flat 1a of the wafer 1 and press it.
The position of the wafer 1 is regulated in cooperation with the regulating roller 93 on the opposite side (right side). As described above, after the position is regulated, the regulation is released with the wafer 1 being suction-fixed to the surface of the bonding stage 10 (step # 14). Incidentally, in the case of a wafer whose back surface has a certain roughness or more, such as a wafer made of quartz, lithium tantalum (LiTa) or the like, the coefficient of friction on the bonding stage surface is high and slippage is poor. It may not be possible. In such a case, the wafer may be lifted by the floating air (step # 11), and the position regulation in step # 12 may be performed in this floating state. At this time, in order to surely lift the wafer, it is preferable to drive the timer to cause the floating air to act for a certain time. When the position regulation is completed, the floating air is turned off and the wafer is fixed by suction.

When the position regulation of the wafer 1 is completed, next,
A bonding step for forming a bump on the electrode portion of each IC chip on the wafer 1 is performed. At this time, bonding is performed while repeatedly recognizing the position of the IC chip on the wafer 1 (Step # 21 and Step # 22). Then, when bonding is completed for a predetermined half of the wafer 1 (step # 23), the wafer 1 is turned (reversed) (step # 31). The turning reversal of the wafer 1 is performed by turning off (stopping) the suction and turning the turning air on with both the floating air and the one-sided air turned on.
N. After the rotation of the wafer, in steps # 32 to # 35, the orientation flat direction is detected and the wafer 1 is fixed by suction. This step is the same as the series of steps # 4 to # 7 described above, except that the left and right steps are different, and the execution contents in the corresponding steps are the same.

After the completion of step # 35, the position of the wafer 1 is determined in steps # 36 to # 39. This step is the same as the series of steps # 11 to # 14, except that the left and right steps are different, and the execution contents in the corresponding steps are the same. Thereafter, bonding is performed on the other half of the wafer 1 (Step # 21 and Step # 22). As described above, when the bonding to the other half of the wafer 1 is performed and the formation of the bumps on both sides (ie, the entire surface of the wafer 1) is completed (step # 41), the transfer means 9 is driven (step # 4).
2) The wafer 1 is unloaded from the bonding stage 10 (Step # 44). At this time, in the case of a wafer whose back surface has a surface roughness of a certain level or more, such as a wafer made of lithium tantalum (LiTa), the wafer 1 is lifted by air so that the transfer and unloading of the wafer 1 can be performed smoothly. (Step # 43).

Thereafter, in step # 45, after cooling, the wafer 1 is gradually cooled at a predetermined temperature gradient or less so that the wafer 1 heated to a high temperature in the bonding stage 10 is not rapidly cooled to room temperature. Is performed.
As a result, the occurrence of cracks due to rapid cooling of the wafer 1 is reliably prevented. As described above, one wafer 1 is divided into approximately halves, and bonding is sequentially performed on one half and the other half, so that bumps are finally formed on the electrode portions of each IC chip over the entire surface. Has become.

Subsequently, in the above-mentioned flowchart, #
The air supply process in the "wafer turning" of # 5 and # 31 will be described with reference to FIGS. First, FIG. 24 shows a simple configuration of the air blowing means for turning according to the present embodiment. The swirling air ejection means 120 communicates with the swirling air ejection port 102 arranged on substantially the same circumference to rotate the wafer 1 as described above, and communicates with the swirling air ejection port 102 at one end. An air supply passage 121 branched at the other end, a turning air supply means 122 provided in one of the branched air supply paths, and a turning assist air supply which can be operated in addition to the turning air supply means 122 Means 125 and each air supply means 12
2, 125, and an air source 128 for supplying air. The swirling air supply means 122 includes a swirling flow needle 123 for passing a predetermined amount of swirling air,
A swirling blow valve 124 that controls the air supply from the air source 128 to the swirling flow needle 123 by opening and closing operation.
And The turning air supply means 122
Similarly to the above, the turning assist air supply means 125 controls the turning assist flow needle 126 for passing a predetermined amount of turning assist air and the air supply from the air source 128 to the turning assist flow needle 126 by opening and closing operations. And a swing blow valve 127 that operates. The swirl blow valves 124, 12 in the respective air supply means 122, 125
7 can be opened and closed at a desired timing. The air supply passage 121 has air supply means 122, 12
Flow meter 129 for measuring the total flow rate of air supplied from 5
Is provided.

The air blowing means 1 for swirling having such a structure.
According to 20, the flow rate of the air jetted from the air jet port 102 can be changed by changing the opening / closing pattern of the swirl blow valves 124, 127 in the air supply means 122, 125. For example, the turning blow valve 124 in the turning air supply unit 122
When the swirl blow valve 127 of the swirl assisting air supply means 125 is closed, only the swirling air having a predetermined flow rate set by the swirl flow needle 123 is supplied through the air supply passage 121 to the air jet. Exit 1
It is ejected from 02. Subsequently, when the turning blow valve 127 of the turning assist air supply means 125 is opened,
Auxiliary swirling air of a predetermined flow rate set in the swirling auxiliary flow needle 126 is supplied through the air supply passage 121,
The air having the total flow rate added to the turning air and jetted out from the air jet port 102 is jetted.

FIGS. 25 and 26 are a flow chart of an air supply process using the swirling air ejection means 120 according to the present embodiment and a graph showing a change in air flow rate in the process. At the time of turning the wafer, first, the turning blow valves 124 and 127 of the air supply means 122 and 125 are opened to supply turning air and turning assisting air. Total flow Q ₁ from outlet 102
The air (see FIG. 26) is blown out (step # 51).
It is preferable that the flow rates of the turning air and the turning assist air are set to 3.3 to 3.4 liters per minute and 9 liters per minute, respectively. By this strong air, even a wafer requiring a large force to start swirling, for example, a quartz or lithium tantalum back surface having a surface roughness of a certain surface roughness (10 to 80 μm), a heavy wafer, or a large wafer can be smoothly processed. Wafer turning can be started. The supply of the turning assist air is performed for a certain time (0.3 to 0.8 seconds) by driving a timer. When t = T ₁ hour elapses after the timer is counted up, turning blown valve 127 is closed in the turning assist air supply means 125, supply of the turning assist air is OFF (step # 52). In this state, only the turning air having a flow rate Q ₀ necessary for maintaining the turning is supplied to the air ejection port 10.
Spout from 2. Further, after the elapse of the time t = T ₂ , the turning blow valve 124 in the turning air
Is closed, and the supply of the turning air is turned off (step # 53). Thereafter, the wafer 1 gradually loses its rotation speed and stops on the bonding stage 10.

As described above, the turning air ejection means 12
According to 0, regardless of the material, weight, size, etc. of the wafer 1, it is possible to smoothly start the wafer turning using strong air, and to weaken the supply air during the turning, Stable wafer rotation can be performed. Further, in this embodiment, since the turning assist air is turned off from the state where the turning air and the turning assist air are both supplied, the air flow rate to the wafer 1 is changed. The transition from the turning to the slow turning can be performed smoothly without interruption of the air supply.

Next, an air supply process in “wafer rotation” according to another embodiment of the present invention will be described with reference to FIGS. 27 and 28. Figures 27 and 28
3A and 3B are a flowchart of an air supply process by a turning air ejection unit and a graph showing a change in an air flow rate in the process. The configuration of the turning air ejection means is the same as that in the above-described embodiment (FIG. 24).
The same reference numerals are given to the same components, and further description will be omitted. In this embodiment, when turning the wafer, first, the turning blow valves of the air supply means are both opened to supply the turning air and the turning assist air, and the turning air injection is performed on the bonding stage upper surface side. Total flow Q from outlet 102
₁ (see FIG. 28) is blown out (step # 6)
1). With this strong air, even a wafer requiring a large force to start turning, for example, a wafer whose back surface has a surface roughness of a certain level or more (surface roughness 10 to 80 μm), a heavy wafer, or a large wafer, can be started smoothly. Can be.

After the elapse of t = T _1, the turning blow valve 127 in the turning assist air supply means 125 is closed, and the supply of turning assist air is turned off (step # 62). In this state, only the turning air having a flow rate Q ₀ necessary to maintain the turning is jetted from the air jet port 102. After this state is maintained for a predetermined time (T _{1 to} T ₂ ) in step # 63, the turning blow valve 127 of the turning assist air supply means 125 is opened again, and the air supply means 122 and 125 air of the total flow rate Q ₁ is supplied (step # 64). In this step # 64, in order to realize more stable wafer turning, the set flow rate of air is changed by the turning assist flow rate needle 126 in the turning assist air supply means 125, which is different from the time of air supply in step # 61. A flow of air may be supplied.

After the lapse of t = T ₃ hours, the turning blow valve 127 in the turning assist air supply means 125 is closed, and the supply of turning assist air is turned off (step #).
65). In this state, only the turning air having the flow rate Q ₀ is
The air is spouted from the air spout 102. Further, after elapse of t = T ₄ hours, by turning blow valve 124 is closed in the turning air supply means 122, supply of the turning air is OFF (step # 66). Thereafter, the wafer 1 gradually loses its rotation speed and stops on the bonding stage 10.

Normally, it is preferable that the wafer is rotated at a low speed in order to secure the detection accuracy of the orientation flat. A wafer having a roughness of a certain level or more (a surface roughness of 10 to 80 μm) may stop before reaching the orientation flat detection position.
In the other embodiment described above, the turning assist air supply is once turned off and then turned on again during the turning of the wafer, that is, the turning assist air is intermittently supplied. Wafer rotation can be maintained. Here, the intermittent supply of the turning assist air may be performed a plurality of times. For a large wafer or a heavy wafer such as a 12-inch diameter wafer, for example, a relatively long time is usually required for turning. However, by supplying intermittent turning assist air several times, the time required for the turning is increased. Can be shortened.

Further, referring to FIGS. 29 and 30, the "wafer rotation" according to still another embodiment of the present invention will be described.
Will be described. FIGS. 29 and 30 are a flowchart of an air supply process by the swirling air ejection means and a graph showing a change in the air flow rate in the process, respectively. In this embodiment, when turning the wafer, first, each of the air supply means 1
Swirl blow valves 124, 127 in 22, 125
Are opened to supply the turning air and the turning assist air, and the air having the total flow rate Q ₁ (see FIG. 30) is jetted from the turning air jet port 102 on the upper surface side of the bonding stage 10 (step #). 71). t = T After ₁ hour,
The air flow rate set by the turning assist flow needle 126 is changed to increase the supply amount of turning assist air (step # 7).
2). In this state, air having a total flow rate Q ₂ (> Q ₁ ) is jetted from the turning air jet port 102 (step # 72).
Then, after t = T ₂ hours, again, by changing the air flow rate is set at turning assist flow needle 126, further increase the supply amount of the turning assist air (step # 73). At this time, air having a total flow rate Q ₃ (> Q ₂ ) is jetted from the turning air jet port 102.

After the lapse of t = T ₃ hours, the turning blow valve 127 of the turning assist air supply means 125 is closed, and the supply of turning assist air is turned off (step #).
74). In this state, only the turning air having a flow rate Q ₀ necessary to maintain the turning is jetted from the air jet port 102. Further, t = T and after _four hours, and turning blow valve 124 is closed in the turning air supply means 122, supply of the turning air is OFF (step # 7
5). Thereafter, the wafer 1 gradually loses its rotation speed and stops on the bonding stage 10.

As described above, in another embodiment of the present invention, since the flow rate of the turning assist air is increased stepwise from the start of the wafer turning, the turning of the wafer is started gently, and the wafer is ejected. Can be suppressed.

Further, as means for realizing a stable wafer rotation, an air ejection port arranged on substantially the same circumference to rotate the wafer 1 in the bonding stage 10 is provided on the bonding stage 10 by the wafer peripheral edge in the above-described embodiment. In addition to the portion corresponding to the vicinity of the portion, the portion may be provided further inside. FIG. 31 shows a bonding stage according to still another embodiment. The stage plate 91 of the bonding stage 10 includes an air outlet 102A (hereinafter, referred to as an outer air outlet) provided at a portion corresponding to a vicinity of a wafer peripheral portion, and an air outlet 102B (hereinafter, referred to as an outer air outlet) provided inside. (Referred to as an inner air ejection port). As in the above-described embodiment, the air supplied from the air supply means via the air supply passage is supplied to the outer air outlet 102A and the inner air outlet 102B.
From a uniform flow rate. Reference numerals 93A and 93B in FIG. 31 indicate a pair of regulating rollers.

According to this, since the air for swirling the wafer 1 is blown out over a relatively wide range of the stage plate 91, the turning force can be dispersed and applied to the entire back surface of the wafer 1, and the stable wafer Turning is possible. This is particularly useful for large wafers.

The above-described turning air ejection means 120
In FIG. 24, the air supplied from the turning air supply unit 122 and the turning assist air supply unit 125 is ejected from the same air ejection port 120. However, the air supply unit 122 is not limited thereto. , 125 from different air outlets. For example, the air supplied from the turning air supply means 122 is supplied from the inner air outlet 102B, and the air supplied from the turning assist air supply means 125 is supplied to the outer air outlet 102A.
In this case, it is possible to provide a turning assist effect with a relatively weak air flow rate.

The present invention is not limited to the illustrated embodiment, and it goes without saying that various improvements or design changes can be made without departing from the scope of the invention.

[0108]

According to the first aspect of the present invention, the transfer means for transferring a wafer positioned in advance so that the orientation flat formed on a part of the outer periphery is oriented in a predetermined direction is provided on the bonding stage. Since the detecting means for detecting the orientation flat position of the wafer is provided, the detecting means is not exposed to a high temperature as in the case where such a detecting means is conventionally provided on the bonding stage side. As a means, it is not necessary to use a heat-resistant material. Further, since the detection means can be moved in accordance with the movement operation of the transfer means, the orientation of the orientation flat is detected as in the conventional case where the detection means is fixedly provided on one side of the bonding stage. It is no longer limited to one side of the stage.

According to the second aspect of the present invention, the detecting means is an optical sensor having a light emitting section and a light receiving section.
Since it is provided in the chuck means of the transfer means, it is possible to reliably detect the orientation flat, and since it is provided in the chuck means of the transfer means, the orientation flat can be detected from above the wafer. In addition, the heat effect from the bonding stage can be reliably avoided.

Further, according to the third aspect of the present invention, since a plurality of the detecting means are arranged side by side in a direction orthogonal to the transfer direction of the transferring means, a higher orientation flat detection accuracy can be obtained. Can be.

Further, according to the fourth invention of the present application,
Since the outer peripheral portion of the bonding stage and the upper surface side in the vicinity thereof are formed in a slope with a predetermined angle, when the orientation flat is detected from above the wafer, when the orientation flat is located below the detection means, The detection light from the light emitting section of the detection means is reflected on the slope in a direction different from that at the time of incidence. That is, even when the orientation flat is located below the detection means, the detection light is prevented from being reflected on the upper surface of the bonding stage and entering the light receiving portion of the detection means to hinder the orientation flat detection. Can be.

Further, according to the fifth invention of the present application,
On the upper surface of the bonding stage, a pair of regulating rollers are provided on both left and right sides, a floating air ejecting means for floating the wafer, a rotating air ejecting means for rotating the wafer, and a one-side regulation of the swirled wafer. A first biasing air jet for stopping against the roller pair and a second biasing air jet for stopping the swiveled wafer against the regulating roller pair on the other side are provided. Since the switching means for switching the air supply to the air ejection port is provided, the wafer can be shifted to either side.
In this case, since the orientation flat detecting means can be moved in accordance with the moving operation of the transfer means, the orientation flat detection direction is not limited to any one side of the bonding stage as in the related art. Can detect the orientation flat.

Further, according to the sixth invention of the present application,
The bonding stage is composed of a stage plate provided with each of the air outlets and a heat block disposed below the stage plate, and the stage plate communicates with each air outlet to supply air from the outside once. Since the air chamber for storing is provided, the supply air from the outside is stored in the air chamber and warmed to some extent before being jetted from the air jet port toward the lower surface of the wafer. Therefore, when the wafer heated in the bonding stage is levitated, swirled or biased by the air from the jet port, the temperature gradient of the cooling by the air can be made gentler than in the past, and the jetting can be performed. It is possible to prevent the cooling action by air from adversely affecting the wafer.

According to the seventh aspect of the present invention, when the wafer is turned, the flow rate of the air jetted to the back side of the wafer by the turning air jetting means is variable. In addition, it is possible to supply air at a flow rate that realizes stable wafer rotation. Further, in this case, the timing of changing the air flow rate is appropriately adjusted, so that a more stable wafer rotation can be realized.

Further, according to the eighth aspect of the present invention, the air flow rate can be controlled by the air supply means provided at the other end of the air supply passage communicating with the plurality of swirling air outlets. The flow rate of air that is ejected from the air ejection port to the back side of the wafer is variable, so the air flow rate is changed according to the material, shape and size of the wafer to supply air at a flow rate that achieves stable wafer rotation. Can be. Further, in this case, since the air from each air supply means is ejected from the same air ejection port, the transition from the fast turning to the slow turning of the wafer can be performed smoothly without interruption of the air supply. It is possible.

Further, according to the ninth aspect of the present invention, the supply of air at a predetermined flow rate is controlled by the air supply means provided at the other end of the air supply passage communicating with the plurality of swirling air jet ports. Since the flow rate of air ejected from the swirling air outlet to the back side of the wafer is variable, the air flow rate is changed according to the material, shape and size of the wafer to achieve a stable flow rate of the wafer. Can be supplied.

Further, according to the tenth aspect of the present invention, since the swirling air is blown out over a relatively wide range of the bonding stage, the swirling force can be dispersed and applied to the entire back surface of the wafer. , Stable wafer rotation is possible. This is particularly useful for large wafers.

Further, according to the eleventh aspect of the present invention, it is possible to finely variably control the flow rate of the air ejected from the air ejection port when the wafer is turned, and to change the air flow rate more smoothly. In addition, the wafer rotation can be further stabilized.

Further, according to the twelfth aspect of the present invention, since the flow rate of the turning assist air is increased stepwise from the start of the turning of the wafer, the flow rate of the air ejected from the air ejection port is changed more smoothly. As a result, the wafer rotation can be started gently, and the protrusion of the wafer can be suppressed.

Further, according to the thirteenth aspect of the present invention, the turning assist air is intermittently supplied during the turning of the wafer. Even for a wafer that is likely to stop above, stable wafer rotation at a low speed can be maintained.

Further, according to the fourteenth aspect of the present invention, it is possible to detect whether or not the orientation of the wafer on the bonding stage is appropriate by detecting the orientation flat position of the wafer after turning.

Further, according to the fifteenth aspect of the present invention, the transfer means for transferring a wafer positioned in advance so that the orientation flat formed on a part of the outer periphery is oriented in a predetermined direction is provided by a six-point grip. Since it is equipped with a chuck device of the type, even when a part of the grip portion of the chuck is caught on the orientation flat when the outer peripheral portion of the wafer is gripped by the chuck, as in the case of using a conventional four-point grip type chuck, In addition, there is no fear that the center of the wafer is shifted during chucking, and it is possible to effectively prevent the displacement of the orientation flat when the wafer is transferred to the bonding stage.

Further, according to the sixteenth aspect of the present invention, detecting means for detecting whether or not the orientation flat position of a wafer in a carrier is within a predetermined range from a reference position, and And a notifying means for notifying an operator when it is detected that the orientation flat position of the wafer is not within a predetermined range from the reference position.
It is possible to reliably determine whether or not the wafer orientation flat position is appropriate, and the determination result is notified to the operator by the notification means. In addition, since the operation of correcting the orientation flat position is simplified, the chance of manually handling the wafer is reduced.

Further, according to a seventeenth aspect of the present invention, the detecting means is an optical sensor having a light emitting section and a light receiving section, and a plurality of the detecting means are provided in a direction orthogonal to the direction of taking out the wafer from the carrier. Since they are arranged side by side, reliable orientation flat detection can be performed by using an optical sensor as the detecting means, and the detecting means itself and its mounting structure can be simplified. Further, by arranging a plurality of such detection means as described above, higher detection accuracy can be obtained.

Further, according to the eighteenth aspect of the present invention, when turning the wafer, the flow rate of the air jetted to the back side of the wafer by the turning air jetting means is variably controlled. Regardless of size and size, it is possible to supply air at a flow rate that realizes stable wafer rotation.

Further, according to the nineteenth aspect of the present invention, in order to increase the flow rate of the air for swirling stepwise from the start of the wafer swirling, the air flow rate spouted from the air outlet is changed more smoothly. , Start the wafer rotation slowly,
The protrusion of the wafer can be suppressed.

Furthermore, according to the twentieth aspect of the present invention, since the turning air is intermittently supplied during the turning of the wafer, for example, the back surface has a certain roughness or more, and the turning surface is formed on the bonding stage. Even for a wafer that is easily stopped, stable wafer rotation at a low speed can be maintained.

Further, according to the twenty-first aspect of the present invention, it is possible to detect whether the orientation of the wafer on the bonding stage is appropriate by detecting the orientation flat position of the wafer after turning.

[Brief description of the drawings]

FIG. 1 is a plan view showing an overall arrangement of a bump bonding apparatus according to an embodiment of the present invention.

FIG. 2 is a perspective view of a wire supply mechanism in the bonding head according to the embodiment.

FIG. 3 is a perspective view showing the bonding head without a wire supply mechanism.

4A and 4B show a bonding operation step according to the embodiment, wherein FIG. 4A is a cross-sectional view of a ball forming step, FIG. 4B is a cross-sectional view of a step of joining a ball to an electrode, and FIG. FIG. 5 is a cross-sectional view of a step of forming a bump by pressing.

5A and 5B show a carrier for carrying a wafer according to the embodiment, wherein FIG. 5A is a cross-sectional plan view taken along line AA of FIG.
(B) is a front view and (c) is a bottom view.

FIG. 6 is a perspective view showing a main configuration of a lifter provided in the loading station according to the embodiment.

FIG. 7 is a plan view of the lifter.

FIG. 8 is an explanatory diagram of a detection operation by an orientation flat detector in the lifter.

FIG. 9 is a perspective view showing a main configuration of a lifter provided in the unloading station according to the embodiment.

FIG. 10 is a perspective view illustrating a schematic configuration of an extraction unit and an insertion unit according to the embodiment.

FIG. 11 is a perspective view of a transfer unit according to the embodiment.

FIG. 12 is a plan view of chuck means in the transfer means.

FIG. 13 is a side view showing a grip portion of the chuck means.

FIG. 14 is a side view showing a detecting means in the chuck means.

FIG. 15 is a perspective view of the bonding stage according to the embodiment.

FIG. 16 is a plan view of the bonding stage.

FIG. 17 is an explanatory sectional view of the bonding stage.

FIG. 18 is an explanatory diagram showing a state in which a detection unit in a chuck unit is positioned with respect to an outer peripheral portion of the bonding stage.

FIG. 19 is an explanatory view of a detection light reflecting action by various inclined portions formed in an outer peripheral portion of the bonding stage and in the vicinity thereof.

FIG. 20 is a first flowchart of a bonding process to each IC chip on a wafer by the bump bonding apparatus.

FIG. 21 is a second flowchart of the bonding process.

FIG. 22 is a third flowchart of the bonding process.

FIG. 23 is a fourth flowchart of the bonding process.

FIG. 24 is a block diagram illustrating a configuration of a swirling air ejection unit in the bonding stage.

FIG. 25 is a flowchart of a turning air supply process during turning of the wafer in the bonding stage.

26 is a graph showing a change in an air flow rate in the turning air supply process of FIG. 25.

FIG. 27 is a flowchart showing an air supply process when rotating a wafer in a bonding stage according to another embodiment of the present invention.

FIG. 28 is a graph showing a change in air flow rate in the turning air supply process of FIG. 27.

FIG. 29 is a flowchart of a turning air supply process when turning a wafer in a bonding stage according to another embodiment of the present invention.

30 is a graph showing a change in an air flow rate in the turning air supply process of FIG. 29.

FIG. 31 is an explanatory view showing a turning air ejection port in a bonding stage according to still another embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Wafer 1a ... Orifla 2 ... Loading station 3 ... Loading side transfer station 4 ... Bonding station 7 ... Unloading means 9 ... Transferring means 10 ... Bonding stage 11 ... Bonding head 30A, 30B ... Carrier 40A, 40B ... Lifter 56 ... Detection sensor 85 ... Orientation flat position detection sensor 91 ... Stage plate 91a ... Inclination section 92 ... Heat block 92b ... Air chamber 101 ... Air port 101 for both suction and floating 102 ... Swirling air jet 103A ... First offset air jet 103B ... Second offset air ejection port 120. Turning air ejection means 121. Air supply passage 122. Turning air supply means 125.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Takaharu Mae 1006 Kadoma, Kazuma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. 72) Inventor Norihisa Watanabe 1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric Industrial Co., Ltd. F-term (reference) 4M105 AA19 AA23 FF04

Claims (21)

[Claims] 1. A wafer positioned in advance so that an orientation flat formed on a part of an outer periphery thereof faces a predetermined direction is transferred onto a bonding stage by a transfer means, and the transferred wafer is bonded to the wafer. A bump bonding apparatus in which a bump is formed by a head, wherein the transfer means is provided with an orientation flat position detection means for detecting an orientation flat position of the wafer on a bonding stage. . 2. The bump bonding apparatus according to claim 1, wherein said detection means is an optical sensor having a light emitting part and a light receiving part, and is provided in a chuck means of said transfer means. 3. The bump bonding apparatus according to claim 1, wherein a plurality of the detection units are arranged in a direction orthogonal to a transfer direction of the transfer unit. 4. The bump bonding apparatus according to claim 2, wherein an outer peripheral portion of the bonding stage and an upper surface side near the outer peripheral portion are formed in a slope with a predetermined angle. 5. A pair of regulating rollers are provided on the left and right sides on the upper surface of the bonding stage, a floating air ejecting means for floating the wafer, a turning air ejecting means for turning the wafer, and A first biasing air jet port for stopping the wafer against the pair of regulating rollers on one side and a second biasing air jet port for stopping the wafer in a rotating state against the pair of regulating rollers on the other side are provided. The bump bonding apparatus according to any one of claims 1 to 4, further comprising a switching unit configured to switch air supply to the second offset air ejection port. 6. A pair of regulating rollers on both right and left sides are provided on the upper surface of the bonding stage, a floating air ejecting means for floating the wafer, a turning air ejecting means for turning the wafer, and a turning wafer. A bumping apparatus for forming a bump on a wafer supplied on the bonding stage by a bonding head, wherein the bumping apparatus includes a biasing air ejection port for stopping against at least one of a pair of regulating rollers; The stage is composed of a stage plate provided with the air outlets and a heat block disposed below the stage plate. The stage plate communicates with the air outlets and temporarily stores supply air from outside. A bump bonding apparatus provided with an air chamber. 7. A bonding air jetting means for floating a wafer and a turning air jetting means for turning a wafer are provided on an upper surface side of the bonding stage, and a bonding head is provided for the wafer supplied on the bonding stage. 2. A bump bonding apparatus according to claim 1, wherein when the wafer is swiveled, the amount of air blown toward the back side of the wafer by the swirling air blowing means is variable. 8. The swirling air ejection means communicates with a plurality of swirling air ejection ports arranged on substantially the same circumference on the upper surface side of the bonding stage, and communicates with the swirling air ejection port at one end side. An air supply passage branched at an end side, and a normal turning air supply means provided on one of the branched air supply passages;
A turning assist air supply means provided in the other of the branched air supply passages, which can be operated in addition to the normal turning air supply means. 8. The bump bonding apparatus according to claim 7, wherein the flow rate of the air jetted from the swirling air jet port to the back side of the wafer is variable. 9. The swirling air jetting means includes a plurality of swirling air jets arranged on a first circumference on a bonding stage upper surface side, and a swirling assist arranged on a second circumference. A normal air supply means provided at the other end of an air supply passage communicating with the turning air jet at one end, and a turning assist air jet at one end. Turning assist air supply means provided on the other end side of the air supply passage, which can be operated in addition to the normal turning air supply means. 8. The bump bonding apparatus according to claim 7, wherein the flow rate of the air jetted to the back side of the wafer is variable. 10. Each of the air ejection ports of the turning air ejection means is located on the upper surface side of the bonding stage, on the circumference corresponding to the peripheral portion of the wafer or in the vicinity thereof, or
The bump bonding apparatus according to claim 8, wherein the bump bonding apparatus is provided on a circumference inside the bump bonding apparatus. 11. The air flow rate can be controlled in at least one of the turning air supply means and the turning assist air supply means.
The bump bonding apparatus according to any one of the above. 12. When the wafer is turned, the air is supplied stepwise from the turning assist air supply means,
The bump bonding apparatus according to any one of claims 8 to 11, wherein a flow rate of air ejected to the back side of the wafer is variably controlled. 13. When the wafer is turned, the air is intermittently supplied from the turn assisting air supply means.
The bump bonding apparatus according to any one of claims 8 to 11, wherein a flow rate of air ejected to the back side of the wafer is variably controlled. 14. An orientation flat position detecting means for detecting an orientation flat position of a wafer on the bonding stage.
3. The bump bonding apparatus according to any one of 3. 15. A wafer positioned in advance so that an orientation flat formed on a part of an outer periphery thereof faces a predetermined direction is transferred onto a bonding stage by a transfer means, and the transferred wafer is bonded to the wafer. A bump bonding apparatus in which a bump is formed by a head, wherein the transfer means includes a six-point holding type chuck means. 16. A carry-in station comprising a carrier capable of storing wafers in a stacked state at a predetermined interval from each other and a lifter for setting the carrier at a predetermined vertical position, wherein the carry-in station includes a carrier. The taken-out wafer is transferred onto the bonding stage by the transfer means,
In the bump bonding apparatus in which bumps are formed on the transferred wafer by a bonding head, the loading station determines whether or not the orientation flat position of the wafer in the carrier is within a predetermined range from the reference position. Bump bonding, comprising: detection means for detecting; and notification means for notifying an operator when the detection means detects that the orientation flat position of the wafer is not within a predetermined range from a reference position. apparatus. 17. The apparatus according to claim 1, wherein said detecting means comprises an optical sensor having a light emitting part and a light receiving part, and a plurality of said detecting means are arranged side by side in a direction orthogonal to a direction of taking out the wafer from the carrier. 17. The bump bonding apparatus according to item 16. 18. A bump bonding method for forming a bump on a wafer supplied onto a bonding stage by a bonding head, wherein: a floating air jetting means for floating the wafer on the bonding stage; And a variably controlling a flow rate of air blown toward the back side of the wafer by the swirling air ejecting means when the wafer is turned. 19. The bump according to claim 18, wherein, when turning the wafer, air is supplied in a stepwise manner from the turning air jetting means to variably control the flow rate of air jetted to the back side of the wafer. Bonding method. 20. The bump according to claim 18, wherein air is intermittently supplied from said swirling air ejecting means when the wafer is swirled to variably control the flow rate of air ejected to the back side of the wafer. Bonding method. 21. An orientation flat position detecting means for detecting an orientation flat position of a wafer on the bonding stage, and detecting an orientation flat position of the wafer after turning the wafer. 2. The bump bonding method according to claim 1.