JP2000036458A - Scanning exposure method, scanning-type aligner and manufacture of device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the exposing amount to a photosensitive substrate and the control accuracy of the uniformity of illuminance, by controlling the scanning speed of a body to be exposed in scanning exposure based on the adequate exposing amount for a body to be exposed and the frequency of the pulse oscillation of the exposing beam. SOLUTION: The specified intended exposing amount is sent from a main control system 13 to an operating part 14 through an input/output means 22. The operating part 14 computes the number of exposing pulses by using exposing amount and the average pulse light amount computed beforehand. Furthermore, the width of the slit-shaped exposing region 24A on the wafer and the information of the oscillating frequency of a pulse-light source 1 are sent to the operating part from a memory 23 through the main control system 13. Then, by using these pieces of information and the exposing pulses, the scanning speed on the wafer surface is obtained. Thus, the control accuracy for the exposing amount for a substrate to be exposed and the uniformity of illuminance is improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask for illuminating a rectangular or arcuate illumination area, for example, using a pulse light source as an exposure light source, and scanning the mask and photosensitive substrate in synchronization with the illumination area. In a so-called slit scan exposure type exposure apparatus for exposing the upper pattern on a photosensitive substrate, an exposure control method and exposure suitable for application when the exposure amount and illuminance uniformity on the photosensitive substrate are controlled within a predetermined range. It relates to a control device.

[0002]

2. Description of the Related Art Conventionally, when a semiconductor device, a liquid crystal display device, a thin film magnetic head, or the like is manufactured by using photolithography technology, a photomask or a reticle (hereinafter, referred to as a "reticle") has been used.
A projection exposure apparatus that exposes a pattern of a “reticle” to a photosensitive substrate such as a wafer or a glass plate coated with a photoresist or the like via a projection optical system is used. Recently, one chip pattern or the like of a semiconductor element has been increasing in size, and a projection exposure apparatus is required to have a large area for exposing a pattern having a larger area on a reticle onto a photosensitive substrate.

Further, as the pattern of a semiconductor element or the like becomes finer, it is required to improve the resolution of the projection optical system. However, in order to improve the resolution of the projection optical system, the projection optical system must be improved. However, there is a problem that it is difficult from the viewpoint of design or manufacture to enlarge the exposure field. In particular, when a catadioptric system is used as the projection optical system, the shape of the aberration-free exposure field may be an arc-shaped region.

In order to increase the area of the pattern to be transferred and to meet the limitation of the exposure field of the projection optical system, for example, a rectangular, arcuate or hexagonal illumination area (this is called a "slit illumination area"). A so-called slit scan exposure type projection exposure apparatus for exposing a pattern having a larger area than the slit-shaped illumination area on the reticle onto the photosensitive substrate by synchronously scanning the reticle and the photosensitive substrate has been developed. I have. In general, in a projection exposure apparatus, conditions for proper exposure amount and illuminance uniformity for a photosensitive material on a photosensitive substrate are defined. Is provided within a predetermined allowable range, and an exposure control device is provided for maintaining the illuminance uniformity of the exposure light on the wafer at a predetermined level.

Recently, it is also required to increase the resolution of a pattern exposed on a photosensitive substrate. One method for increasing the resolution is to shorten the wavelength of exposure light.
In this regard, among light sources that can be used at present, those that emit light having a short wavelength are pulse oscillation type laser light sources (pulse light sources) such as excimer laser light sources and metal vapor laser light sources. However, unlike a continuous light source such as a mercury lamp, the pulse light source has a characteristic that the exposure energy (pulse light amount) of the emitted pulse light varies within a predetermined range for each pulse emission.

Therefore, in the conventional exposure control device, the average pulse light amount of the pulse light from the pulse light source is <p>, and the range of variation of the pulse light amount of the pulse light is Δp. / <P>
Are normally distributed (random).
Then, the number of pulsed lights irradiated onto a certain area on the photosensitive substrate (this is called a “pulse number accumulation area”) that is relatively scanned with respect to the exposure area conjugate with the slit-shaped illumination area by the pulsed light Is N, the variation of the integrated exposure amount after the exposure is completed is (Δp / <p>) / N ^1/2 , and the integrated exposure amount is set to an appropriate exposure amount within a predetermined allowable range. Was controlled to reach.

In the case of performing exposure by a slit scan exposure method using a pulse light source, how to set the light emission timing of the pulse light source poses a problem. Conventionally, when scanning the reticle and the photosensitive substrate synchronously using the length measurement output of a length measuring device (for example, a laser interferometer) for measuring the displacement of the substrate-side stage for scanning the photosensitive substrate. Each time the substrate-side stage moves a predetermined distance, a light emission trigger signal is sent to the pulse light source. Therefore, it can be said that the conventional pulse light source emits light in synchronization with the length measurement output of the length measuring device.

[0008]

In the prior art as described above, the variation in the pulse light quantity of the pulse light output from the pulse light source was considered. No consideration has been given to variations in light emission timing, which are variations in the time until the pulsed light source actually emits light. However, the present inventor has found that variations in the light emission timing of the pulse light source affect the control accuracy of the exposure amount and the illuminance uniformity.

Generally, a length measuring device (laser interferometer, etc.)
, There is a variation in the time from when the length measurement is actually performed to when the length measurement result is output. Since the variation in the emission timing of the pulse light source described above is added to the variation in the readout timing of the length measurement result, the pulse light source emits light in synchronization with the length measurement output of the length measurement device as in the related art. In this case, the control accuracy of the exposure amount and the illuminance uniformity cannot be maintained within an allowable range.

In view of the above, the present invention improves the control accuracy of the exposure amount and illuminance uniformity on a photosensitive substrate when a reticle pattern is exposed on the photosensitive substrate by a slit scan exposure method using a pulse light source. It is an object of the present invention to provide a scanning exposure method which can be performed. Still another object of the present invention is to provide a scanning exposure apparatus that can be used when performing such a scanning exposure method, and a device manufacturing method that can manufacture a device with high accuracy using the scanning exposure method.

[0011]

A first scanning exposure method according to the present invention is directed to a scanning exposure method for scanning and exposing an object to be exposed by moving the object with respect to a pulsed exposure beam. The scanning speed of the object during the scanning exposure is controlled on the basis of the appropriate exposure amount for the object and the frequency of the pulse oscillation of the exposure beam.

A second scanning exposure method according to the present invention is directed to a scanning exposure method for scanning and exposing an object by moving the object with respect to a pulsed exposure beam. The scanning speed of the object to be exposed during the scanning exposure and the energy of the exposure beam to the object to be exposed are controlled on the basis of the appropriate exposure amount for the exposure and the pulse oscillation frequency of the exposure beam.

The third scanning exposure method according to the present invention is directed to a scanning exposure method for scanning and exposing an object to be exposed by moving the object in a predetermined scanning direction with respect to a pulsed exposure beam. A first step of calculating the number of pulses of an exposure beam to be applied to each point on the object while passing through the irradiation area of the exposure beam, based on an appropriate exposure amount for the object to be exposed; A second step of comparing the number of pulses of the exposure beam obtained in one step with the number of pulses of the exposure beam to be irradiated in order to control the integrated exposure amount for the object to be exposed within a desired accuracy; 2
After the step, a third step of starting movement of the object to be exposed in the scanning direction for the scanning exposure.

A fourth scanning exposure method according to the present invention is directed to a scanning exposure method for scanning and exposing an object to be exposed by moving the object in a predetermined scanning direction with respect to a pulsed exposure beam. A first step of performing a plurality of pulse oscillations of the exposure beam, a second step of obtaining an average energy of the plurality of exposure beams pulsed in the first step, and performing the scanning exposure based on the average energy. A third step of determining the scanning speed of the object to be exposed.

A scanning exposure apparatus according to the present invention is a scanning exposure apparatus for scanning and exposing an object by moving the object with respect to the exposure beam. Source, a monitor means for measuring the energy of the exposure beam pulsed from the beam source, and using the measurement result of the monitor means, determine the average energy of the plurality of exposure beams pulsed from the beam source, A control system for determining a control parameter for scanning exposure of the object to be exposed based on the average energy.

Next, a first device manufacturing method according to the present invention uses the scanning exposure method of the present invention. A second device manufacturing method according to the present invention uses the scanning exposure apparatus of the present invention.

[0017]

According to the first or second scanning exposure method of the present invention, the proper exposure amount of the object to be exposed (photosensitive substrate), the oscillation frequency of the exposure beam, the exposure amount to the object to be exposed, and the uniformity of the illuminance are determined. The minimum number of exposure pulses required to maintain the specified accuracy,
Utilizing that a predetermined relationship is established between the scanning speed of the object to be exposed and the scanning speed of the object to be exposed, or the scanning speed and the energy of the exposure beam, respectively, so that the exposure amount and The control accuracy of illuminance uniformity is improved.

According to the third scanning exposure method of the present invention, the number of exposure pulses is compared with the minimum number of exposure pulses before the movement of the substrate to be exposed. Performing scanning exposure in a state smaller than the number of exposure pulses can be prevented. Therefore, the control accuracy of the exposure amount and the illuminance uniformity on the substrate to be exposed is improved. According to the fourth scanning exposure method of the present invention, for example, dummy light emission is performed before actual exposure to determine the average pulse energy of the exposure beam. The scanning speed and the like can be determined with high accuracy so that the number becomes equal to or more than the minimum exposure pulse number. Therefore, the control accuracy of the exposure amount and the illuminance uniformity on the substrate to be exposed is improved.

In this case, the accuracy of the exposure amount control and the control of the illuminance uniformity can be further improved by performing the exposure amount control in consideration of not only the variation of the pulse energy but also the variation of the light emission timing of the pulse light source. Also,
According to the scanning exposure apparatus of the present invention, the scanning exposure method of the present invention can be performed.

[0020]

An embodiment of the present invention will be described below with reference to the drawings. In this embodiment, the present invention is applied to a slit scan exposure type projection exposure apparatus having a pulse oscillation type exposure light source such as an excimer laser light source as a light source. FIG. 1 shows a projection exposure apparatus according to the present embodiment. In FIG. 1, a laser beam emitted from a pulse oscillation type pulse light source 1 is transmitted by a beam shaping optical system 2 including a cylinder lens and a beam expander. The cross-sectional shape of the beam is shaped so as to efficiently enter the subsequent fly-eye lens 4. The laser beam emitted from the beam shaping optical system 2 enters the light amount adjusting means 3. The light amount adjusting means 3 has a coarse adjustment part and a fine adjustment part of the transmittance.
The laser beam emitted from the light amount adjusting means 3 enters the fly-eye lens 4. The fly-eye lens 4 illuminates the subsequent field stop 7 and reticle R with uniform illuminance.

The laser beam emitted from the fly-eye lens 4 enters a beam splitter 5 having a low reflectance and a high transmittance, and the laser beam passing through the beam splitter 5 is applied to a field stop 7 by a first relay lens 6. Is illuminated with uniform illumination. The shape of the opening of the field stop 7 of this embodiment is rectangular. The laser beam that has passed through the field stop 7 illuminates the reticle R on the reticle stage 11 with uniform illuminance via the second relay lens 8, the bending mirror 9 and the main condenser lens 10. The field stop 7 is conjugate with the pattern forming surface of the reticle R and the exposure surface of the wafer W, and the laser beam is applied to the rectangular slit-shaped illumination area 24 on the reticle R conjugate with the opening of the field stop 7. . By changing the shape of the opening of the field stop 7 via a driving unit (not shown), the shape of the slit-shaped illumination area 24 can be adjusted.

A slit-shaped illumination area 24 on the reticle R
Are projected and exposed on the wafer W via the projection optical system 15. A region conjugate with respect to the slit-shaped illumination region 24 and the projection optical system 15 is defined as an exposure region 24W. Then, assuming that the Z axis is parallel to the optical axis of the projection optical system 15 and the scanning direction of the reticle R with respect to the slit-shaped illumination area 24 in the plane perpendicular to the optical axis is the X direction, the reticle stage 11 is a reticle stage. Scanning is performed in the X direction by the drive unit 12. The reticle stage drive unit 12 is controlled by a main control system 13 that controls the operation of the entire apparatus. The reticle stage drive section 12 incorporates a length measuring device (laser interferometer or the like) for detecting the coordinates of the reticle stage 11 in the X direction, and the X coordinate of the reticle stage 11 measured by the main control is used as the main control. It is supplied to the system 13.

On the other hand, the wafer W is placed via a wafer holder 16 on an XY stage 17 which can be scanned at least in the X direction (the horizontal direction in FIG. 1). Although not shown, a Z stage or the like for positioning the wafer W in the Z direction is provided between the XY stage 17 and the wafer holder 16. At the time of the slit scan exposure, the wafer W is transferred to the exposure area 24 via the XY stage 17 in synchronization with the reticle R being scanned in the + X direction (or -X direction).
W is scanned in the -X direction (or X direction). The main control system 13 controls the XY
The operation of the stage 17 is controlled. The wafer stage drive unit 18 incorporates a length measuring device (laser interferometer or the like) for detecting the coordinates of the XY stage 17 in the X direction and the Y direction. The coordinates are supplied to the main control system 13.

The laser beam reflected by the beam splitter 5 is received by an exposure monitor 19 comprising a photoelectric conversion element, and a photoelectric conversion signal of the exposure monitor 19 is supplied to the arithmetic unit 14 via an amplifier 20. . The relationship between the photoelectric conversion signal of the exposure monitor 19 and the illuminance of the pulse exposure light on the exposure surface of the wafer W is determined in advance. That is, the photoelectric conversion signal of the exposure monitor 19 is calibrated in advance.

The arithmetic unit 14 measures the light emission timing of each pulse light as well as the variation of the pulse light amount of the pulse light output from the pulse light source 1 based on the photoelectric conversion signal of the exposure monitor 19. The variation in the pulse light amount and the variation in the light emission timing are supplied to the main control system 13. At the time of exposure, the arithmetic unit 14 integrates the photoelectric conversion signals for each pulse light, obtains the integrated exposure amount for the wafer W, and supplies the integrated exposure amount to the main control system 13.

The main control system 13 controls the light emission timing of the pulse light source 1 by supplying a light emission trigger signal TP to the pulse light source 1 via the trigger control unit 21. The timing at which the light emission trigger signal TP is transmitted from the trigger control unit 21 to the pulse light source 1 and the operation unit 14
Based on the light reception timing detected in step (1), the calculation unit 14 calculates the variation in the time from when the light emission trigger is supplied to the pulse light source 1 to when the pulse light source 1 actually emits light, that is, the variation in the light emission timing of the pulse light source 1. You can ask. In addition, the main control system 13 adjusts the output power of the pulse light source 1 or adjusts the transmittance of the light amount adjusting means 3 as necessary. An operator can input pattern information and the like of the reticle R to the main control system 13 via the input / output means 22, and the main control system 13 is provided with a memory 23 capable of storing various information.

Next, an example of the operation of exposing the pattern of the reticle R on the wafer W in this embodiment will be described with reference to the flowchart of FIG. First, step 1 in FIG.
01, the operator inputs the desired exposure amount S (mJ / c) on the wafer surface to the main control system 13 via the input / output means 22.
m ² ). Next, in step 102, the main control system 13 gives an instruction for dummy light emission to the trigger control unit 21. Then, the pulse light source 1 is retracted to a place where the wafer W is not exposed (an area outside the exposure area 24W).
The test light emission (dummy light emission) is performed. In the dummy light emission, for example, a pulse light of about 100 pulses is emitted, and the distribution of the pulse light amount and the distribution of the light emission timing that can be seen from the photoelectric conversion signal detected by the exposure amount monitor 19 are as shown in FIG.
As shown in FIG.

FIG. 3 (a) shows the distribution of the value (mJ / cm ² ) of the pulse light quantity p (amount converted on the exposed surface of the wafer) of each pulse light measured by the dummy light emission.
(B) is a pulse light source 1 measured by the dummy light emission.
3 shows the distribution of the light emission timing δ (sec). And
In step 103, the calculation unit 14 calculates the average pulse light quantity <p> (mJ / cm ² · pulse) on the exposure surface of the wafer from the distribution data of the pulse light quantity p shown in FIG. From the distribution data of the light emission timing δ shown in b), the average value <δ> of the variation of the light emission timing is obtained.

Thereafter, in step 104, the operation unit 14
Is based on the distribution data of the pulse light quantity p shown in FIG.
The deviation Δp of the pulse light amount at three times the standard deviation (3σ) is obtained, and the deviation Δδ of the light emission timing at three times the standard deviation is obtained from the distribution data of the light emission timing δ shown in FIG. Then, the arithmetic unit 14 calculates the variation of the pulse light amount (Δp / <p>) and the variation of the light emission timing (Δδ
/ <Δ>) is calculated.

Next, in step 105, the desired exposure amount S (mJ / cm
² ) is sent from the main control system 13 to the calculation unit 14, and the calculation unit 14 calculates the number N of exposure pulses from the following equation using the desired exposure amount S and the average pulse light amount <p> calculated in step 103. I do.

[0031]

(Equation 1)

Here, int (A) represents an integer obtained by truncating the decimal portion of the real number A. Further, the width D of the slit-shaped exposure region 24W in the scanning direction on the wafer surface is input to the arithmetic unit 14 from the memory 23 via the main control system 13.
(Cm), information on the oscillation frequency f (Hz) of the pulse light source 1 is sent, and the arithmetic unit 14 calculates the wafer surface using the number of exposure pulses N, the width D, and the frequency f obtained by (Equation 1) by the following equation. The above scanning speed v (cm / sec) is obtained.

[0033]

(Equation 2)

Thereafter, in step 106, the operation unit 1
4 calculates the minimum exposure pulse number _Nmin required to control the integrated exposure amount and the illuminance uniformity on the exposure surface of the wafer W within a predetermined accuracy. explain. The number N of exposure pulses and the minimum number N _min of exposure pulses are supplied to the main control system 13.

Next, at step 107, the main control system 13 compares the number N of exposure pulses with the minimum number N _min of exposure pulses, and if (N <N _min ), proceeds to step 108, where The control system 13 roughly lowers (coarsely adjusts) the transmittance of the light amount adjusting means 3 in FIG. After that, from step 102
Repeat until 107, compares the again exposure pulse number N and the minimum exposure pulse number N _min. Therefore, the transmittance of the light amount adjusting means 3 is set so that finally (N ≧ N _min ). Examples of the means for coarsely adjusting the transmittance include JP-A-63-316430 and JP-A-Hei.
There is an apparatus in which an ND filter having a plurality of transmittances is mounted on a turret plate, as disclosed in JP-A-257327.

Next, when (N ≧ N _min ) is satisfied in step 107, the process proceeds to step 109, where the light amount of the pulse light is finely adjusted. That is, in the equation (1), S / <p>
Is finely adjusted so that is an integer. At this time, since the scanning speed v is also determined in step 105 according to the number N of exposure pulses obtained from (Equation 1),
It is desirable to finely adjust the pulse light amount so as not to change the value of the exposure pulse number N, that is, in a direction in which the average pulse light amount <p> is slightly increased. Conversely, when the average pulse light quantity <p> becomes slightly smaller due to the fine adjustment of the pulse light quantity and the number N of exposure pulses becomes (N + 1), the scanning speed v is newly obtained according to (Equation 2). Do it.

As an example of the light amount fine adjustment means for finely adjusting the energy of the pulse light, Japanese Patent Application Laid-Open No.
As disclosed in JP-A-135723, two gratings which are arranged along the optical path of pulsed light and have line and space patterns formed at the same pitch, and these two gratings are slightly Means including a mechanism for laterally displacing is exemplified. When using two grids,
Since the pulse light in the region where the bright portion of the first grating and the bright portion of the second grating overlap is irradiated on the wafer W side, by adjusting the relative lateral shift amount of the two gratings, The amount of pulse light applied to the wafer W can be finely adjusted.

Thereafter, in step 110, the main control system 13 starts scanning the reticle R and the wafer W via the reticle stage 11 and the XY stage 17 on the wafer side. In FIG. 1, for example, when the reticle R is scanned in the X direction, the wafer W is scanned in the −X direction. Further, in this example, the scanning speed of the reticle R and the wafer W (converted value on the exposed surface of the wafer W) v is determined by (Equation 2), but the scanning speed of the XY stage 17 on the wafer side after the start of scanning. Is set to T ₀ until the scanning speed reaches the scanning speed v.

Further, at the start of scanning, the time t is reset to 0 and the parameter j is reset to 0.
As shown in FIG. 11, the main control system 13 sets the time t to (T ₀ +
(jΔT), the light emission trigger signal TP is turned on (high-level “1” pulse) by the pulse light source 1 via the trigger control unit 21. In response, the pulse light source 1 generates one pulse light, and the pattern of the reticle R is exposed on the wafer W.

FIG. 5 shows the light emission trigger signal TP of the present embodiment. As shown in FIG. 5, the light emission trigger signal TP is turned on at a constant period ΔT from the time when the time t reaches T ₀ . Therefore, the pulse light source 1 emits light at a constant period ΔT, and the oscillation frequency f of the pulse light source 1 is represented by 1 / ΔT. The oscillation frequency f is a value stored in the memory 23 in advance. Thereafter, 1 is added to the parameter j in step 112, and if the parameter j does not reach the integer _NT in step 113, the pulse light source 1 emits light in step 111, so that _{NT T} The emission of the pulse light is performed at a constant frequency f (with a constant period ΔT).

In FIG. 1, the width of one shot area on the wafer W in the scanning direction (X direction) is L1, and the exposure area 24 is
Assuming that the width of W in the scanning direction is D, the distance over which wafer W is scanned in one cycle of light emission of pulsed light source 1 is v / f. Therefore, the minimum value of pulse light emission number _NT is as follows. Become. _NT = (L1 + D) / (v / f) = (L1 + D) f / v In practice, a predetermined number of pulse lights are added at the start and end of scanning. Then, in step 113, when the number of emitted pulses reaches _NT , the process proceeds to step 114 and the main control system 13 ends scanning and exposure of the reticle R and the wafer W. Thus, the entire pattern for one shot on reticle R is exposed to one shot area on wafer W. In this case, in this example, the light emission of the pulse light source 1 is based on the X coordinate of the reticle stage 11 and the XY on the wafer side.
This is performed at a constant frequency regardless of the X coordinate of the stage 17. However, the reticle stage 11 and the XY stage 17 are each scanned at a constant speed. for that reason,
In this example, even if the time required to measure the X coordinate of the reticle stage 11 or the time required to measure the X coordinate of the XY stage 17 on the wafer side varies, the oscillation frequency of the pulse light source 1 is not affected, and the wafer W Is maintained within a desired accuracy.

Next, a method of calculating the minimum number N _min of exposure pulses in step 106 of FIG. 2 will be described in detail. First, the illumination field (illumination area 24) formed by the field stop 7 in FIG. 1 and the illuminance distribution along the cross section in the scanning direction of the exposure area 24W on the wafer W are ideally rectangular. However, in practice, the illuminance distribution becomes trapezoidal as shown in FIG. 4 due to an installation error of the field stop 7, an aberration of the optical system, and the like.

FIG. 4 shows the illuminance distribution of each pulsed light at the position X in the scanning direction on the wafer W as a function p of the position X. For example, assuming that light emitted from one point in the opening of the field stop 7 is uniformly illuminated on the wafer W in a circular area having a radius △ D, the slope portion of the trapezoidal illuminance distribution is expressed by the following equation. It is easily proved to be a function of such a variable (X / ΔD).

[0044]

(Equation 3)

FIG. 4 shows the illuminance distribution along such a cross section having a slight blur, with the distribution curves 25A, 25A for each pulsed light.
5B and 25C. Actually, the width of the exposure region 24W in the scanning direction is several mm, and the width ΔD of the illuminance blur is
Since it is about several μm, the illuminance distribution along the cross section in FIG. 4 is a substantially rectangular distribution. Distribution curves 25A, 25B, 25
The peak values of C are p ₁ , p ₂ , and p ₃ , respectively. In the distribution curves 25A, 25B, and 25C, the width in the scanning direction at the position where each value is の of the peak value is D in common. ing. This width D can be considered as the width of the exposure region 24W in the scanning direction.

Also, in FIG. 4, the pulse light amount varies.
First pulse (distribution curve 25A), second pulse
(Distribution curve 25B) of the third pulse (distribution curve 25C)
The peak light amount is changing, and the light emission timing
The emission interval of each pulsed light is not constant due to
It's getting worse. Here, the distribution curve 25A of the first pulse
The value of each of the slopes on both sides is 1
/ 2 or less area (width △ D ₁ And △ D_Two Area),
The number of pulses to be repeatedly exposed after the second pulse is N₁And N_Two
 Then, the following equation is established.

[0047]

(Equation 4)

That is, since the number of pulses exposed during scanning of the exposure region having the width D is N (represented by (Equation 1)), the regions having the widths ΔD ₁ and ΔD ₂ have respective widths of N. As many pulsed light beams as the width is exposed are exposed. At this time, the exposure amount after the scanning exposure and the accuracy A of the illuminance uniformity are expressed by the following equations. For example, if the accuracy is 1%, A is 0.01.

[0049]

(Equation 5)

The first term on the right-hand side of (Equation 5) is a term caused by the variation of the pulse light amount, the second term is a term caused by the variation of the pulse light amount and the variation of the light emission timing, and the third term is of the exposure area 24W. This is a term representing deterioration of illuminance uniformity caused by blur asymmetry. In the right side of (Equation 5),
The width D, the width ΔD ₁ , and the width ΔD ₂ are stored in the memory 23 as device constants. Note that, although different from the present embodiment, the exposure apparatus may have a measurement function of the width D, the width ΔD ₁ , and the width ΔD ₂ . Further, (△ p / <p>) and (△ δ / <δ>) are obtained by actual measurement as shown in step 104. Therefore, the desired accuracy A is given by (Equation 5)
, And solving for N, the minimum exposure pulse number N _min required to obtain the desired accuracy A is obtained.

In the above-described embodiment, the control means for reducing interference fringes generated due to the influence of the spatial coherence of the pulse light source 1 and irregular illumination unevenness (speckle) will not be described. Was omitted. Since an excimer laser generally has good spatial coherence, an exposure apparatus using an excimer laser light source is provided with interference fringe reduction means, and controls exposure amount while reducing interference fringes by exposing a plurality of pulses. 1-25732
No. 7). In this case, the smaller of the minimum number of exposure pulses required for interference fringe reduction and the minimum number of exposure pulses N _min obtained from (Equation 4) and (Equation 5) may be determined as N _min .

In the above embodiment, the exposure amount monitor 19 is used.
Is installed in the illumination optical system, but the exposure amount monitor 19 may be replaced by a sensor on the wafer stage (16, 17). However, the sensor provided on the wafer stage in this way can be used only during the dummy light emission of the pulse light source 1, and when the wafer W is actually exposed, another exposure amount monitor is required.

In this embodiment, the slit-shaped illumination area is rectangular. However, it goes without saying that the present invention can be similarly applied to an illumination area having a hexagonal shape, a diamond shape, or an arc shape. Further, the projection optical system 15 in FIG. 1 may be of a refraction type, a reflection type, or a catadioptric type. The pulse light source 1 is not limited to a laser light source, but may be a plasma X-ray source, a synchrotron radiation device (SOR), or the like. Further, it goes without saying that the present invention is effective not only in a projection exposure apparatus but also in an exposure apparatus of a contact type or a proximity type.

As described above, the present invention is not limited to the above-described embodiment, and can take various configurations without departing from the gist of the present invention.

[0055]

According to the present invention, for example, the number of exposure pulses for a substrate to be exposed (wafer) can be set to be equal to or more than the minimum number of exposure pulses required to make the exposure amount and illuminance uniformity equal to or more than a predetermined accuracy. Therefore, there is an advantage that the control accuracy of the exposure amount and the illuminance uniformity on the substrate to be exposed is improved. Further, control accuracy is further improved by taking into account the variation in pulse energy of the exposure beam.

[Brief description of the drawings]

FIG. 1 is a configuration diagram illustrating a slit scan exposure type projection exposure apparatus according to an embodiment of the present invention.

FIG. 2 is a flowchart illustrating an example of an exposure operation in the embodiment.

FIG. 3A is a diagram illustrating a distribution state of a pulse light amount in the embodiment, and FIG. 3B is a diagram illustrating a distribution state of light emission timing in the embodiment.

FIG. 4 is a diagram illustrating an illuminance distribution by pulsed light on an exposure surface of a wafer according to an example.

FIG. 5 is a timing chart showing a light emission trigger pulse supplied to the pulse light source according to the embodiment.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 pulse light source 3 light amount adjusting means 7 field stop R reticle W wafer 11 reticle stage 13 main control system 14 arithmetic unit 15 projection optical system 17 XY stage 19 exposure amount monitor 21 trigger control unit

Claims (33)

[Claims] 1. A scanning exposure method for scanning and exposing an object to be exposed by moving the object to be exposed to a pulsed exposure beam, comprising the steps of: A scanning speed of the object to be exposed during the scanning exposure based on the frequency of the scanning exposure. 2. A scanning exposure method for scanning and exposing an object to be exposed by moving the object to be exposed to a pulsed exposure beam, the method comprising: A scanning speed of the object to be exposed during the scanning exposure and an energy of an exposure beam to the object to be exposed during the scanning exposure. 3. The energy of the exposure beam is controlled such that the number of pulses of the exposure beam applied to each point on the object during the scanning exposure becomes an integer. 3. The scanning exposure method according to 1. 4. The method according to claim 1, wherein a pulse number of an exposure beam to be irradiated on each point on the object to be exposed while passing through the irradiation area of the exposure beam is obtained based on a proper exposure amount for the object to be exposed. The scanning exposure method according to any one of claims 1 to 3, wherein the scanning speed of the object to be exposed is controlled based on the frequency of the laser beam and the determined number of pulses. 5. The scanning exposure method according to claim 4, wherein the scanning speed of the object to be exposed is controlled in consideration of the width of the exposure beam in the moving direction of the object to be exposed. 6. The exposure speed to be applied to each point on the object to be exposed while passing through the irradiation area of the exposure beam, wherein the scanning speed of the object to be exposed is v, the frequency of the pulse oscillation of the exposure beam is f, 6. The condition of v = D · f / N1 is satisfied, where N1 is the pulse number of the beam, and D is the width of the exposure beam in the moving direction of the object. 6. 3. The scanning exposure method according to 1. 7. The condition according to claim 6, wherein N1 ≧ N2, wherein N2 is the number of exposure beams required to control the integrated exposure amount of the object to be exposed within a desired accuracy. Scanning exposure method. 8. A scanning exposure method for scanning and exposing an object to be exposed by moving the object to be exposed in a predetermined scanning direction with respect to an exposure beam that is pulse-oscillated, based on an appropriate exposure amount for the object to be exposed. A first step of determining the number of pulses of the exposure beam to be applied to each point on the object to be exposed while passing through the irradiation area of the exposure beam; and a number of pulses of the exposure beam determined in the first step. And a second step of comparing the number of pulses of an exposure beam to be irradiated in order to control the integrated exposure amount of the object to be exposed to within a desired accuracy, after the second step, A third step of starting movement of the object to be exposed in the scanning direction. 9. In the second step, the number of pulses of the exposure beam obtained in the first step and the number of pulses of the exposure beam necessary to control the integrated exposure amount of the object to be exposed within a desired accuracy. And determining whether to start scanning exposure at the scanning speed of the object to be exposed, which is determined based on the number of pulses obtained in the first step, by comparing the number with the number of pulses. 9. The scanning exposure method according to item 8. 10. In the second step, the number of pulses of the exposure beam obtained in the first step is equal to the number of pulses of the exposure beam necessary to control the integrated exposure amount of the object to be exposed within a desired accuracy. 10. The scanning exposure method according to claim 8, wherein the movement of the object to be exposed is started for the scanning exposure when the number is equal to or more than the number. 11. Prior to the first step, the exposure beam is pulsed to measure the energy of the exposure beam, and in the first step, the proper exposure amount and the measured energy are measured. 11. The scanning exposure method according to claim 8, wherein the number of pulses of an exposure beam to be applied to each point on the object to be exposed during the scanning exposure is obtained based on the number of pulses. 12. The method according to claim 1, wherein the number of pulses of the exposure beam required to control the integrated exposure amount of the object to be exposed within a desired accuracy is determined based on a variation in energy of the exposure beam. A scanning exposure method according to any one of claims 8 to 11. 13. The number of pulses of an exposure beam required to control the integrated exposure amount of the object to be exposed to within a desired accuracy, taking into account the intensity distribution of the exposure beam in the moving direction of the object to be exposed. The scanning exposure method according to claim 8, wherein the scanning exposure method is determined. 14. A scanning exposure method for scanning and exposing an object to be exposed by moving the object to be exposed in a predetermined scanning direction with respect to an exposure beam to be pulse-oscillated, wherein the pulse oscillation of the exposure beam is performed a plurality of times. A first step, a second step of obtaining an average energy of the plurality of exposure beams pulsed in the first step, and a scanning speed of the object during the scanning exposure is determined based on the average energy. A scanning exposure method, comprising: a third step. 15. In the third step, the number of pulses of an exposure beam to be irradiated on each point on the object during the scanning exposure is calculated based on the average energy. The scanning exposure method according to claim 14, wherein the scanning speed of the object to be exposed is determined based on the number of pulses. 16. An exposure beam to be irradiated onto the object to control the number of pulses of the exposure beam obtained based on the average energy and the integrated exposure amount to the object within desired accuracy. 4th comparison with the number of pulses of
The method according to claim 15, further comprising a step. 17. The method according to claim 17, wherein, in the fourth step, the number of pulses of the exposure beam obtained based on the average energy;
In order to control the integrated exposure amount for the object to be exposed to within a desired accuracy, the number of pulses of the exposure beam to be irradiated on the object is compared with the number of pulses of the exposure beam to be irradiated. 17. The scanning exposure method according to claim 16, wherein whether to start scanning exposure at a scanning speed of the object to be exposed determined based on the number is determined. 18. The method according to claim 18, wherein the number of pulses of the exposure beam determined based on the average energy is equal to the number of pulses of the exposure beam to be irradiated on the object to control the integrated exposure amount of the object within a desired accuracy. 18. The scanning exposure method according to claim 17, wherein, when the number of pulses is equal to or more than the number of pulses, movement of the object to be exposed in the scanning direction for the scanning exposure is started. 19. The number of pulses of an exposure beam to be irradiated on the object to control the integrated exposure amount of the object within a desired accuracy, in consideration of a variation in energy of the exposure beam. The scanning exposure method according to claim 16, wherein the method is determined. 20. The number of pulses of an exposure beam to be irradiated onto the object to control the integrated exposure amount of the object within a desired accuracy, the intensity distribution of the exposure beam in the scanning direction is determined. The scanning exposure method according to any one of claims 16 to 19, wherein the method is determined in consideration of the above. 21. The scanning speed of the object to be exposed is v, the width of the exposure beam in the scanning direction is D, the frequency of pulse oscillation of the exposure beam is f, The number of pulses of the exposure beam to irradiate the point is N
21. The scanning exposure method according to claim 14, wherein the following condition is satisfied: v = D · f / N. 22. A device manufacturing method using the scanning exposure method according to claim 1. 23. A scanning exposure apparatus for scanning and exposing an object to be exposed by moving the object to be exposed with respect to an exposure beam, wherein: a beam source for oscillating the exposure beam; Monitoring means for measuring the energy of the exposure beam, and using the measurement result of the monitoring means to determine an average energy of the plurality of exposure beams pulse-oscillated from the beam source, and based on the average energy, the object to be exposed. And a control system for determining a control parameter for scanning exposure of the scanning exposure apparatus. 24. The scanning exposure apparatus according to claim 23, wherein the control parameter includes a scanning speed of the object during the scanning exposure. 25. The control system, according to the average energy and an appropriate exposure amount for the object to be exposed, determines the number of pulses of an exposure beam to be applied to each point on the object to be exposed during the scanning exposure. 3. The method according to claim 2, wherein the scanning speed is determined based on the determined number of pulses.
5. The scanning exposure apparatus according to 4. 26. The scanning exposure apparatus according to claim 25, wherein the control system determines the scanning speed based on the determined number of pulses and a frequency of pulse oscillation of the exposure beam. . 27. The scanning system according to claim 25, wherein the control system determines the scanning speed based on the determined number of pulses and a width of the exposure beam in a moving direction of the object. 27. The scanning exposure apparatus according to 26. 28. The scanning exposure according to claim 23, wherein the control parameter includes energy of an exposure beam applied to the object during the scanning exposure. apparatus. 29. Adjusting the energy of the exposure beam applied to the object to be exposed so that the number of pulses of the exposure beam applied to each point on the substrate during the scanning exposure is made an integer. 29. The scanning exposure apparatus according to claim 28, wherein: 30. A shaping unit for shaping the shape of an exposure beam pulse-oscillated from the beam source, wherein the monitor unit detects a part of the exposure beam emitted from the shaping unit. The scanning exposure apparatus according to any one of claims 23 to 29. 31. An adjusting device for adjusting the energy of an exposure beam pulse-oscillated from the beam source, wherein the monitor device detects a part of the exposure beam emitted from the adjusting device. The scanning exposure apparatus according to any one of claims 23 to 30. 32. An exposure apparatus further comprising: a uniformizing unit for uniformly irradiating an exposure beam pulse-oscillated from the beam source onto the object to be exposed; and the monitoring unit includes an exposure beam emitted from the uniformizing unit. 32. The scanning exposure apparatus according to claim 23, wherein a part of the scanning exposure apparatus is detected. 33. A device manufacturing method using the scanning exposure apparatus according to claim 23.