JP2000034568A - Rotary substrate holder - Google Patents
Rotary substrate holderInfo
- Publication number
- JP2000034568A JP2000034568A JP10200517A JP20051798A JP2000034568A JP 2000034568 A JP2000034568 A JP 2000034568A JP 10200517 A JP10200517 A JP 10200517A JP 20051798 A JP20051798 A JP 20051798A JP 2000034568 A JP2000034568 A JP 2000034568A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- processed
- substrate holder
- rotating
- concave portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、回転基板ホルダー
に係わり、特に、被処理基板の表面を成膜処理する成膜
装置に使用される回転基板ホルダーに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a rotating substrate holder, and more particularly to a rotating substrate holder used in a film forming apparatus for forming a film on a surface of a substrate to be processed.
【０００２】[0002]
【従来の技術】従来、半導体製造用のシリコンウエハや
コンパクトディスク（ＣＤ）、ミニディスク（ＭＤ）等
の基板（以下「被処理基板」と総称する。）の表面に、
ＣＶＤやスパッタリング等によって成膜処理を施すため
に成膜装置が使用されている。2. Description of the Related Art Conventionally, a surface of a substrate (hereinafter, collectively referred to as a "substrate to be processed") such as a silicon wafer for manufacturing semiconductors, a compact disk (CD), and a mini disk (MD) has been described.
A film forming apparatus is used to perform a film forming process by CVD, sputtering, or the like.
【０００３】図３は、従来の成膜装置の一例としてＣＶ
Ｄ装置の概略構成を示した縦断面図である。図３に示し
たようにこのＣＶＤ装置は、内部を真空排気可能な真空
容器１を備え、この真空容器１の内部は、ノズル板２に
よって処理室３とガス貯留室４との上下に区画されてい
る。ノズル板２には複数のガス噴出孔５が形成されてい
る。FIG. 3 shows a CV as an example of a conventional film forming apparatus.
It is a longitudinal section showing the schematic structure of D device. As shown in FIG. 3, the CVD apparatus includes a vacuum vessel 1 capable of evacuating the inside, and the inside of the vacuum vessel 1 is divided into a processing chamber 3 and a gas storage chamber 4 above and below by a nozzle plate 2. ing. A plurality of gas ejection holes 5 are formed in the nozzle plate 2.
【０００４】真空容器１の天壁６には、プロセスガスを
導入するためのガス導入口７が形成されており、このガ
ス導入口７には、プロセスガスを輸送するためのガス輸
送配管８の一端が接続されている。ガス輸送配管８の他
端はプロセスガスが充填されたガスボンベ（図示せず）
に接続されている。一方、真空容器１の底壁９には、排
気管１０の一端が接続された排気口１１が形成されてお
り、排気管１０の他端は真空ポンプ（図示せず）に接続
されている。[0004] A gas inlet 7 for introducing a process gas is formed in the top wall 6 of the vacuum vessel 1. The gas inlet 7 is provided with a gas transport pipe 8 for transporting the process gas. One end is connected. The other end of the gas transport pipe 8 is a gas cylinder (not shown) filled with process gas.
It is connected to the. On the other hand, an exhaust port 11 to which one end of an exhaust pipe 10 is connected is formed in the bottom wall 9 of the vacuum vessel 1, and the other end of the exhaust pipe 10 is connected to a vacuum pump (not shown).
【０００５】処理室３の内部には、被処理基板を保持し
て回転させるための回転基板ホルダー１２が設けられて
おり、この回転基板ホルダー１２は、被処理基板を保持
する基板保持部材１３及びこの基板保持部材１３の下面
に取り付けられた回転軸１４を備えている。回転軸１４
は駆動モータ（図示せず）からの動力によって回転され
る。基板保持部材１３には被処理基板を加熱するための
電気ヒータ等からなる加熱手段１５が埋設されている。A rotary substrate holder 12 for holding and rotating a substrate to be processed is provided inside the processing chamber 3. The rotary substrate holder 12 includes a substrate holding member 13 for holding the substrate to be processed and a rotating substrate holder 12. A rotation shaft 14 is provided on the lower surface of the substrate holding member 13. Rotating shaft 14
Is rotated by power from a drive motor (not shown). Heating means 15 such as an electric heater for heating the substrate to be processed is embedded in the substrate holding member 13.
【０００６】図４は、図３に示した従来の成膜装置の回
転基板ホルダー１２を示した縦断面図であり、図４に示
したようにこの回転基板ホルダー１２は、被処理基板Ｓ
を填め込み得る形状の凹部１６が形成されており、この
凹部１６の底面１７に被処理基板Ｓを直接載置するよう
に構成されている。FIG. 4 is a longitudinal sectional view showing a rotating substrate holder 12 of the conventional film forming apparatus shown in FIG. 3, and as shown in FIG.
Is formed, and the substrate S to be processed is directly placed on the bottom surface 17 of the concave portion 16.
【０００７】そして、凹部１６の側周面１８は、回転中
の被処理基板Ｓの側端部Ｓａを支持して、回転時の被処
理基板Ｓの水平方向の動きを規制し、被処理基板Ｓの飛
び出しを防止する。[0007] The side peripheral surface 18 of the concave portion 16 supports the side end portion Sa of the rotating substrate S to restrict the horizontal movement of the substrate S during rotation. Prevents S from jumping out.
【０００８】[0008]
【発明が解決しようとする課題】図４に示した従来の回
転基板ホルダー１２においては、被処理基板Ｓを凹部１
６の底面１７に直接載置するようにしているので、被処
理基板Ｓの裏面Ｓｂの全体が凹部１６の底面１７に接触
する。In the conventional rotary substrate holder 12 shown in FIG.
6, the entire back surface Sb of the substrate to be processed S contacts the bottom surface 17 of the recess 16.
【０００９】このため、被処理基板Ｓの裏面Ｓｂと凹部
１６の底面１７との間の僅かな隙間にプロセスガスが回
り込み、両面Ｓｂ、１７の間に反応生成物や堆積物等が
発生する。また、被処理基板Ｓの側端部Ｓａと凹部１６
の側周面１８との間の僅かな間隙にも反応生成物や堆積
物等が発生する。For this reason, the process gas flows into a slight gap between the back surface Sb of the substrate S to be processed and the bottom surface 17 of the concave portion 16, and a reaction product or a deposit is generated between the two surfaces Sb and 17. Further, the side end portion Sa of the substrate to be processed S and the concave portion 16 are formed.
Reaction products, deposits, and the like are also generated in a slight gap between the side peripheral surface 18 and the outer peripheral surface 18.
【００１０】そして、被処理基板Ｓと回転基板ホルダー
１２との間に発生した反応生成物や堆積物等によって、
被処理基板Ｓが回転基板ホルダー１２に固着されてしま
う。このため、例えば処理済の被処理基板Ｓを回転基板
ホルダー１２から取り出せなくなったり、或いは、取り
出し時に搬送用ロボット（図示せず）が被処理基板Ｓを
正しくつかめず、取り出した被処理基板Ｓの受け渡しが
できなくなるという問題があった。また、取り出し時又
は受け渡し時に被処理基板Ｓを破損してしまう場合もあ
った。The reaction products and deposits generated between the substrate S to be processed and the rotating substrate holder 12 cause
The substrate S to be processed is fixed to the rotating substrate holder 12. For this reason, for example, the processed substrate S cannot be removed from the rotary substrate holder 12, or a transfer robot (not shown) cannot correctly grasp the substrate S at the time of removal, and the removed substrate S There was a problem that it could not be delivered. Further, the substrate S to be processed may be damaged at the time of removal or transfer.
【００１１】さらに、処理済の被処理基板Ｓを回転基板
ホルダー１２から取り出せたとしても、回転基板ホルダ
ー１２の凹部１６の表面に残った反応生成物・堆積物等
のために、未処理の被処理基板Ｓを凹部１６に填め込む
ことができなくなることがあった。Further, even if the processed substrate S can be taken out of the rotary substrate holder 12, unreacted substrates S due to reaction products and deposits remaining on the surface of the concave portion 16 of the rotary substrate holder 12. In some cases, the processing substrate S cannot be inserted into the recess 16.
【００１２】本発明は、上述した種々の問題点に鑑みて
なされたものであって、被処理基板の固着を防止できる
回転基板ホルダーを提供することを目的とする。The present invention has been made in view of the various problems described above, and has as its object to provide a rotating substrate holder that can prevent the substrate to be processed from sticking.
【００１３】[0013]
【課題を解決するための手段】本発明による回転基板ホ
ルダーは、被処理基板を保持すると共に保持した被処理
基板と一体に回転する基板保持部材を備えた回転基板ホ
ルダーにおいて、被処理基板を填め込み得る形状の凹部
が前記基板保持部材の上面に形成されており、前記凹部
の側周面は、回転中の被処理基板の側端部を支持して被
処理基板の水平方向の動きを規制する水平方向支持面を
構成し、被処理基板の裏面を下方から部分的に支持する
支持部材が前記凹部の底面に突設されていることを特徴
とする。SUMMARY OF THE INVENTION A rotary substrate holder according to the present invention is a rotary substrate holder having a substrate holding member for holding a substrate to be processed and rotating integrally with the held substrate to be processed. A concave portion having a shape that can be inserted therein is formed on the upper surface of the substrate holding member, and a side peripheral surface of the concave portion supports a side end portion of the substrate to be processed during rotation to restrict horizontal movement of the substrate to be processed. And a support member that partially supports the back surface of the substrate to be processed from below is protruded from the bottom surface of the concave portion.
【００１４】また、好ましくは、前記支持部材は、前記
凹部の底面の周縁部に突設された複数の支持片である。Preferably, the support member is a plurality of support pieces protruding from a peripheral edge of a bottom surface of the recess.
【００１５】また、好ましくは、前記凹部に填め込まれ
た被処理基板の裏面側の空間に不活性ガスを供給するた
めのガス供給機構をさらに有し、前記裏面側の空間に供
給された不活性ガスを前記裏面側の空間から排出するた
めの排気孔が、前記凹部を内側に形成する側周壁に貫通
形成されている。Preferably, the apparatus further comprises a gas supply mechanism for supplying an inert gas to a space on the back side of the substrate to be processed, which is filled in the recess, and further comprises a gas supply mechanism for supplying the inert gas to the space on the back side. An exhaust hole for discharging the active gas from the space on the back surface side is formed to penetrate a side peripheral wall forming the recess inside.
【００１６】また、好ましくは、前記支持部材は周方向
に等角度間隔で複数配設されており、前記排気孔は隣り
合う前記支持部材同士の間に位置するようにして周方向
に等角度間隔で複数配設されている。Preferably, a plurality of the support members are provided at equal angular intervals in the circumferential direction, and the exhaust holes are located at equal angular intervals in the circumferential direction so as to be located between the adjacent support members. It is arranged in multiple.
【００１７】[0017]
【発明の実施の形態】以下、本発明の一実施形態による
回転基板ホルダーについて図１及び図２を参照して説明
する。なお、本実施形態による回転基板ホルダーは、図
３に示した成膜装置に装着することができるものであ
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A rotating substrate holder according to one embodiment of the present invention will be described below with reference to FIGS. The rotating substrate holder according to the present embodiment can be mounted on the film forming apparatus shown in FIG.
【００１８】図１は本実施形態による回転基板ホルダー
２０の概略構成を示した縦断面図であり、図２は同平面
図である。FIG. 1 is a longitudinal sectional view showing a schematic configuration of a rotary substrate holder 20 according to the present embodiment, and FIG. 2 is a plan view of the same.
【００１９】図１及び図２に示したように本実施形態に
よる回転基板ホルダー２０は、被処理基板Ｓを受け入れ
て保持し、保持した被処理基板Ｓと一体に回転する基板
保持部材２１と、基板保持部材２１の下面に取り付けら
れ、基板保持部材２１を回転駆動する回転軸２２と、を
備えている。回転軸２２は、駆動モータ（図示せず）か
らの動力によって回転される。As shown in FIGS. 1 and 2, the rotating substrate holder 20 according to the present embodiment receives and holds a substrate S to be processed, and a substrate holding member 21 that rotates integrally with the held substrate S; A rotation shaft 22 that is attached to the lower surface of the substrate holding member 21 and that drives the substrate holding member 21 to rotate. The rotating shaft 22 is rotated by power from a drive motor (not shown).
【００２０】また、基板保持部材２１の内部には、被処
理基板Ｓを加熱するための電気ヒータ等よりなる加熱手
段（図示せず）が設けられている。A heating means (not shown) such as an electric heater for heating the substrate S to be processed is provided inside the substrate holding member 21.
【００２１】基板保持部材２１の上面２３には、被処理
基板Ｓを填め込み得る形状の凹部２４が形成されてい
る。凹部２４の直径は被処理基板Ｓの直径よりも僅かに
大きい。凹部２４の底面２５の周縁部には複数の支持片
２６が突設されており、これらの支持片２６によって、
被処理基板Ｓの裏面Ｓｂを下方から部分的に支持する支
持部材が構成されている。複数の支持片２６は周方向に
等角度間隔で配設されている。The upper surface 23 of the substrate holding member 21 is formed with a concave portion 24 having a shape capable of receiving the substrate S to be processed. The diameter of the concave portion 24 is slightly larger than the diameter of the substrate S to be processed. A plurality of support pieces 26 project from the peripheral edge of the bottom surface 25 of the recess 24, and these support pieces 26
A support member that partially supports the back surface Sb of the target substrate S from below is configured. The plurality of support pieces 26 are arranged at equal angular intervals in the circumferential direction.
【００２２】凹部２４の側周面２７は、回転中の被処理
基板Ｓの側端部Ｓａを支持して被処理基板Ｓの水平方向
の動きを規制する水平方向支持面を構成している。The side peripheral surface 27 of the concave portion 24 constitutes a horizontal support surface that supports the side end portion Sa of the substrate S to be rotated and restricts the horizontal movement of the substrate S.
【００２３】また、本実施形態による回転基板ホルダー
２０は、凹部２４に填め込まれた被処理基板Ｓの裏面側
の空間２８に不活性ガスＧを供給するためのガス供給機
構をさらに備え、このガス供給機構は回転軸２２に形成
されたガス導入流路２９を有している。このガス導入流
路２９のガス放出側端部は、被処理基板Ｓの裏面側の空
間２８に開口している。The rotary substrate holder 20 according to the present embodiment further includes a gas supply mechanism for supplying an inert gas G to a space 28 on the back surface side of the substrate S to be processed, which is inserted into the recess 24. The gas supply mechanism has a gas introduction channel 29 formed on the rotating shaft 22. The gas discharge side end of the gas introduction channel 29 is open to the space 28 on the back surface side of the substrate S to be processed.
【００２４】さらに、凹部２４を内側に形成する側周壁
３０には、被処理基板Ｓの裏面側の空間２８に供給され
た不活性ガスＧを裏面側空間２８から排出するための排
気孔３１が貫通形成されている。排気孔３１は、隣り合
う支持片２６同士の間に位置するようにして周方向に等
角度間隔で配設されている。Further, an exhaust hole 31 for exhausting the inert gas G supplied to the space 28 on the back side of the substrate S to be processed from the back side space 28 is formed in the side peripheral wall 30 forming the recess 24 inside. It is formed through. The exhaust holes 31 are arranged at equal angular intervals in the circumferential direction so as to be located between adjacent support pieces 26.
【００２５】本実施形態の回転基板ホルダー２０を図３
に示した成膜装置に装着して被処理基板Ｓを成膜処理す
る際には、凹部２４内に被処理基板Ｓを填め込んだ後、
駆動モータによって回転基板ホルダー２０を回転させな
がら、プロセスガスを被処理基板Ｓの表面に供給し、Ｃ
ＶＤにて基板表面に所定の膜を形成する。The rotating substrate holder 20 of the present embodiment is shown in FIG.
When the substrate S to be processed is mounted on the film forming apparatus shown in FIG.
While rotating the rotary substrate holder 20 by the drive motor, the process gas is supplied to the surface of the substrate S to be processed.
A predetermined film is formed on the substrate surface by VD.
【００２６】また、成膜処理中は、ガス供給機構のガス
導入流路２９を介して被処理基板Ｓの裏面側の空間２８
に不活性ガスが供給される。During the film forming process, the space 28 on the back surface side of the substrate S is processed through the gas introduction passage 29 of the gas supply mechanism.
Is supplied with an inert gas.
【００２７】凹部２４の側周面２７は、回転中の被処理
基板Ｓの側端部Ｓａを支持して水平方向の動きを規制
し、これによって被処理基板Ｓの飛び出しが防止され
る。The side peripheral surface 27 of the concave portion 24 supports the side end portion Sa of the substrate to be processed S during rotation and regulates the horizontal movement, thereby preventing the substrate to be processed S from jumping out.
【００２８】そして、上述したように本実施形態による
回転基板ホルダー２０は、凹部２４の底面２５の周縁部
に突設した複数の支持片２６によって被処理基板Ｓの裏
面Ｓｂを部分的に支持するようにしたので、被処理基板
Ｓの裏面Ｓｂと回転基板ホルダー２０との接触面積が極
めて小さく、このため、成膜プロセスによる生成物・堆
積物等に起因する被処理基板Ｓと回転基板ホルダー２０
との固着を防止することができる。As described above, the rotating substrate holder 20 according to the present embodiment partially supports the back surface Sb of the substrate S to be processed by the plurality of support pieces 26 protruding from the peripheral edge of the bottom surface 25 of the concave portion 24. As a result, the contact area between the back surface Sb of the substrate S to be processed and the rotating substrate holder 20 is extremely small, and therefore, the substrate S to be processed and the rotating substrate holder 20 caused by products and deposits due to the film forming process.
Can be prevented from sticking.
【００２９】さらに、ガス供給機構のガス導入流路２９
を介して被処理基板Ｓの裏面側の空間２８に供給された
不活性ガスは、一部は排気孔３１を介して排気され、一
部は被処理基板Ｓの側端部Ｓａと凹部２４の側周面２７
との間隙から上方に向かって放出される。これらの不活
性ガスの流れによって基板裏面側への成膜の回り込み等
を防止でき、成膜プロセス中における被処理基板Ｓと回
転基板ホルダー２０との固着が防止される。Further, the gas introduction passage 29 of the gas supply mechanism
The inert gas supplied to the space 28 on the back surface side of the substrate S to be processed through the exhaust port 31 is partially exhausted through the exhaust hole 31, and the inert gas is partially exhausted through the side end portion Sa and the concave portion 24 of the substrate S to be processed. Side peripheral surface 27
Is discharged upward from the gap between The flow of the inert gas can prevent the film from wrapping around the back surface of the substrate and the like, and prevent the substrate S to be processed and the rotating substrate holder 20 from sticking during the film forming process.
【００３０】また、被処理基板Ｓの裏面側の空間２８に
供給された不活性ガスは、図示を省略した加熱手段によ
る被処理基板Ｓの加熱効率を高めると共に、加熱の面内
均一性を向上させる。ここで、複数の支持片２６及び複
数の排気孔３１は周方向に等角度間隔で配設されている
ので、不活性ガスの流れは裏面側の空間２８の内部で全
体として均一となり、加熱の面内均一性がさらに高ま
る。The inert gas supplied to the space 28 on the back side of the substrate S increases the heating efficiency of the substrate S by a heating means (not shown) and improves the in-plane uniformity of the heating. Let it. Here, since the plurality of support pieces 26 and the plurality of exhaust holes 31 are arranged at equal angular intervals in the circumferential direction, the flow of the inert gas becomes uniform as a whole in the space 28 on the back side, and In-plane uniformity is further improved.
【００３１】さらに、不活性ガスは、成膜装置を構成す
る部材の冷却用ガスとしても機能し、過熱による部材の
損傷を防止することができる。Further, the inert gas also functions as a cooling gas for members constituting the film forming apparatus, and can prevent damage to members due to overheating.
【００３２】[0032]
【発明の効果】以上述べたように本発明による回転基板
ホルダーによれば、基板保持部材の上面に形成した凹部
の側周面によって回転中の被処理基板の水平方向の動き
を規制すると共に、凹部の底面に突設した支持部材によ
って被処理基板の裏面を下方から部分的に支持するよう
にしたので、被処理基板の裏面と回転基板ホルダーとの
接触面積が小さくなり、成膜プロセスによる被処理基板
と回転基板ホルダーとの固着を防止することができる。As described above, according to the rotating substrate holder of the present invention, the horizontal movement of the substrate to be processed during rotation is restricted by the side peripheral surface of the concave portion formed on the upper surface of the substrate holding member. Since the back surface of the substrate to be processed is partially supported from below by the support member protruding from the bottom surface of the concave portion, the contact area between the back surface of the substrate to be processed and the rotating substrate holder is reduced, so that the surface to be processed by the film forming process is reduced. Sticking between the processing substrate and the rotating substrate holder can be prevented.
【図１】本発明の一実施形態による回転基板ホルダーの
概略構成を示した縦断面図。FIG. 1 is a longitudinal sectional view showing a schematic configuration of a rotating substrate holder according to an embodiment of the present invention.
【図２】本発明の一実施形態による回転基板ホルダーの
概略構成を示した平面図。FIG. 2 is a plan view showing a schematic configuration of a rotating substrate holder according to an embodiment of the present invention.
【図３】成膜装置の一例を示した縦断面図。FIG. 3 is a longitudinal sectional view showing an example of a film forming apparatus.
【図４】従来の回転基板ホルダーの概略構成を示した縦
断面図。FIG. 4 is a longitudinal sectional view showing a schematic configuration of a conventional rotary substrate holder.
１ 真空容器 ２ ノズル板 ３ 処理室 ２０ 回転基板ホルダー ２１ 基板保持部材 ２２ 回転軸 ２３ 基板保持部材の上面 ２４ 凹部 ２５ 凹部の底面 ２６ 支持部材（支持片） ２７ 凹部の側周面（水平方向支持面） ２８ 被処理基板の裏面側空間 ２９ ガス導入流路 ３０ 凹部を内側に形成する側周壁 ３１ 排気孔 Ｓ 被処理基板 Ｓａ 被処理基板の側端部 Ｓｂ 被処理基板の裏面 DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Nozzle plate 3 Processing chamber 20 Rotating substrate holder 21 Substrate holding member 22 Rotating axis 23 Upper surface of substrate holding member 24 Depression 25 Bottom of depression 26 Support member (supporting piece) 27 Side peripheral surface of depression (horizontal supporting surface) 28) Back side space of substrate to be processed 29 Gas introduction flow path 30 Side peripheral wall forming recess inside 31 Exhaust hole S Substrate to be processed Sa Side edge of substrate to be processed Sb Back side of substrate to be processed
Claims (4)
理基板と一体に回転する基板保持部材を備えた回転基板
ホルダーにおいて、 被処理基板を填め込み得る形状の凹部が前記基板保持部
材の上面に形成されており、前記凹部の側周面は、回転
中の被処理基板の側端部を支持して被処理基板の水平方
向の動きを規制する水平方向支持面を構成し、 被処理基板の裏面を下方から部分的に支持する支持部材
が前記凹部の底面に突設されていることを特徴とする回
転基板ホルダー。1. A rotating substrate holder having a substrate holding member for holding a substrate to be processed and rotating integrally with the held substrate to be processed, wherein a concave portion having a shape capable of loading the substrate to be processed is formed on an upper surface of the substrate holding member. The side peripheral surface of the concave portion constitutes a horizontal support surface for supporting a side end portion of the rotating substrate to be processed and restricting the horizontal movement of the substrate to be processed. A supporting member for partially supporting the back surface of the rotating substrate from below is protruded from a bottom surface of the concave portion.
に突設された複数の支持片であることを特徴とする請求
項１記載の回転基板ホルダー。2. The rotating substrate holder according to claim 1, wherein said support member is a plurality of support pieces projecting from a peripheral portion of a bottom surface of said concave portion.
側の空間に不活性ガスを供給するためのガス供給機構を
さらに有し、 前記裏面側の空間に供給された不活性ガスを前記裏面側
の空間から排出するための排気孔が、前記凹部を内側に
形成する側周壁に貫通形成されていることを特徴とする
請求項１又は請求項２に記載の回転基板ホルダー。3. A gas supply mechanism for supplying an inert gas to a space on the back surface side of the substrate to be processed, which is filled in the concave portion, wherein the inert gas supplied to the space on the back surface side is supplied. 3. The rotating substrate holder according to claim 1, wherein an exhaust hole for discharging from the space on the back surface side is formed to penetrate a side peripheral wall that forms the concave portion inside. 4.
配設されており、前記排気孔は隣り合う前記支持部材同
士の間に位置するようにして周方向に等角度間隔で複数
配設されていることを特徴とする請求項３記載の回転基
板ホルダー。4. A plurality of said supporting members are arranged at equal angular intervals in the circumferential direction, and said plurality of exhaust holes are arranged at equal angular intervals in the circumferential direction so as to be located between adjacent supporting members. The rotating substrate holder according to claim 3, wherein the rotating substrate holder is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10200517A JP2000034568A (en) | 1998-07-15 | 1998-07-15 | Rotary substrate holder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10200517A JP2000034568A (en) | 1998-07-15 | 1998-07-15 | Rotary substrate holder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000034568A true JP2000034568A (en) | 2000-02-02 |
Family
ID=16425638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10200517A Withdrawn JP2000034568A (en) | 1998-07-15 | 1998-07-15 | Rotary substrate holder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000034568A (en) |
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|---|---|---|---|---|
| JP2003273037A (en) * | 2002-03-14 | 2003-09-26 | Wacker Siltronic Ag | Method for epitaxially coating surface side of semiconductor wafer in cvd reaction vessel, coated semiconductor wafer and susceptor for cvd reaction vessel |
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-
1998
- 1998-07-15 JP JP10200517A patent/JP2000034568A/en not_active Withdrawn
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|---|---|---|---|---|
| JP2003273037A (en) * | 2002-03-14 | 2003-09-26 | Wacker Siltronic Ag | Method for epitaxially coating surface side of semiconductor wafer in cvd reaction vessel, coated semiconductor wafer and susceptor for cvd reaction vessel |
| JP2007019350A (en) * | 2005-07-08 | 2007-01-25 | Nuflare Technology Inc | Epitaxial growth apparatus |
| JP4695934B2 (en) * | 2005-07-08 | 2011-06-08 | 株式会社ニューフレアテクノロジー | Epitaxial growth equipment |
| US10260164B2 (en) | 2010-02-26 | 2019-04-16 | Applied Materials, Inc. | Methods and apparatus for deposition processes |
| KR101924055B1 (en) * | 2010-02-26 | 2018-11-30 | 어플라이드 머티어리얼스, 인코포레이티드 | Methods and apparatus for deposition processes |
| KR20180129968A (en) * | 2010-02-26 | 2018-12-05 | 어플라이드 머티어리얼스, 인코포레이티드 | Methods and apparatus for deposition processes |
| KR102101984B1 (en) * | 2010-02-26 | 2020-04-20 | 어플라이드 머티어리얼스, 인코포레이티드 | Methods and apparatus for deposition processes |
| US10731272B2 (en) | 2010-02-26 | 2020-08-04 | Applied Materials, Inc. | Methods and apparatus for deposition processes |
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| US10156798B2 (en) | 2016-12-13 | 2018-12-18 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
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