JP2000031443A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2000031443A JP2000031443A JP10195678A JP19567898A JP2000031443A JP 2000031443 A JP2000031443 A JP 2000031443A JP 10195678 A JP10195678 A JP 10195678A JP 19567898 A JP19567898 A JP 19567898A JP 2000031443 A JP2000031443 A JP 2000031443A
- Authority
- JP
- Japan
- Prior art keywords
- light source
- semiconductor device
- electronic circuit
- light
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、受光部と電子回路
を有する半導体装置に関し、より詳しくは、受光部と電
子回路が一つのチップに形成されるワンチップセンサに
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a light receiving section and an electronic circuit, and more particularly to a one-chip sensor in which the light receiving section and the electronic circuit are formed on one chip.
【０００２】[0002]
【従来の技術】入射した光によって光電変換する受光部
と、この受光部で生成された信号を処理する電子回路を
同一半導体チップ上に形成した半導体装置は、既に周知
の技術である。このような半導体装置には、イメージセ
ンサのように空間分解能を増大させるため高度に集積化
がなされた素子や、ワンチップセンサのように光照射量
などを検出するための素子が有る。2. Description of the Related Art A semiconductor device in which a light receiving portion for performing photoelectric conversion by incident light and an electronic circuit for processing a signal generated by the light receiving portion are formed on the same semiconductor chip is a known technology. Such semiconductor devices include a highly integrated element such as an image sensor for increasing spatial resolution, and an element for detecting a light irradiation amount and the like such as a one-chip sensor.
【０００３】後者の素子は、集積化はさほど必要としな
いものの、受光する光の波長範囲が限られる分野や、信
号を大きく増幅せねばならない分野など、イメージセン
サとは異なる分野に使用される。例えば、光通信などの
分野にこのような半導体装置が使用される。この分野に
おいて、光導波路、光ファイバ、端面発光レーザダイオ
ードなどが光源として用いられ、上記の半導体装置は、
これらの物体の端面から放出される光を受光するために
使用される。このような物体を光源とする場合、半導体
装置の受光部は、放出エネルギーの離散を防止して光を
効率よく入射させるために、これらの物体の端面と出来
る限り近接させて配置させるのが好ましい。その間隔
は、５００マイクロメートル以内にされることも有る。Although the latter element does not require much integration, it is used in a field different from an image sensor, such as a field where the wavelength range of light to be received is limited or a signal must be greatly amplified. For example, such a semiconductor device is used in fields such as optical communication. In this field, an optical waveguide, an optical fiber, an edge emitting laser diode and the like are used as a light source, and the semiconductor device is
It is used to receive light emitted from the end faces of these objects. When such an object is used as a light source, the light receiving portion of the semiconductor device is preferably arranged as close as possible to the end faces of these objects in order to prevent emission energy from being dispersed and to efficiently enter light. . The spacing may be within 500 micrometers.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、このよ
うな半導体装置は、光源とアセンブリさせる際、光源の
端面が半導体装置に接触してしまう。このため、半導体
装置は、ダメージを受けることにより破損して機能しな
くなるという問題点があった。本発明は、このような問
題点に鑑みてなされたものであり、光源の接触による損
傷が軽減される半導体装置を提供する。However, when such a semiconductor device is assembled with a light source, the end face of the light source comes into contact with the semiconductor device. For this reason, there is a problem that the semiconductor device is damaged and becomes inoperable when damaged. The present invention has been made in view of such a problem, and provides a semiconductor device in which damage due to contact with a light source is reduced.
【０００５】[0005]
【課題を解決するための手段】請求項１の半導体装置
は、入射した光によって光電変換する受光部と、能動領
域を有し前記受光部からの信号を入力して信号処理する
電子回路とを設けた半導体集積回路において、前記受光
部の周囲には光源接触部が配置されていることを特徴と
する。即ち、本半導体装置は、光源が接触することを想
定した領域を予め設けるのである。この構成により、光
源が接触してもそのダメージによる損傷が軽減された半
導体装置を提供することが可能となる。According to a first aspect of the present invention, there is provided a semiconductor device comprising: a light receiving portion for performing photoelectric conversion by incident light; and an electronic circuit having an active area for inputting a signal from the light receiving portion and performing signal processing. In the provided semiconductor integrated circuit, a light source contact portion is arranged around the light receiving portion. That is, the semiconductor device is provided with a region in which the light source is assumed to come into contact in advance. With this configuration, it is possible to provide a semiconductor device in which damage due to damage caused by contact with a light source is reduced.
【０００６】また、本発明者は、光源が接触してダメー
ジを受けた半導体装置を詳細に調べた。その結果、損傷
を強く受けて機能しなくなるのは主に電子回路であり、
特にその能動領域が機械的損傷に弱いためであることが
判明した。また、逆に、素子分離領域は、機械的損傷に
強い事が判明した。請求項２の発明は、請求項１に記載
された半導体装置において、前記光源接触部は、前記能
動領域を有しないことを特徴とする。また、請求項３の
発明は、請求項１に記載された半導体装置において、前
記光源接触部は、素子分離領域からなることを特徴とす
る。光源接触部に能動領域を有しない構成にすれば、又
は、光源接触部を素子分離領域にすれば、光源が接触す
ることによる損傷を軽減されるのである。Further, the present inventors have examined in detail a semiconductor device that has been damaged by contact with a light source. As a result, it is mainly electronic circuits that are severely damaged and fail.
In particular, it has been found that the active area is vulnerable to mechanical damage. Conversely, it has been found that the element isolation region is resistant to mechanical damage. According to a second aspect of the present invention, in the semiconductor device according to the first aspect, the light source contact portion does not have the active region. According to a third aspect of the present invention, in the semiconductor device according to the first aspect, the light source contact portion includes an element isolation region. If the active area is not provided in the light source contact portion, or if the light source contact portion is an element isolation region, the damage caused by the contact of the light source can be reduced.
【０００７】これらの構成により、光源の接触による損
傷の軽減される半導体装置を提供することが可能とな
る。本発明者により、光源の接触による損傷を強く受け
るのは、上記のように主に電子回路であることが判明し
た。しかし、その他に金属配線の断線による機能不全の
割合も多いことが判明した。従来の半導体装置は、光を
受光する受光部と信号処理する電子回路とを区別するこ
となく、集積回路を構成する要素として、同一設計基準
に則って製造される。従って、光源が接触する領域の金
属配線は、その他の領域と同様微細な線幅で設計される
こととなる。[0007] With these configurations, it is possible to provide a semiconductor device in which damage due to contact with a light source is reduced. The present inventor has found that it is mainly the electronic circuit that is strongly damaged by the contact of the light source as described above. However, it was also found that there was a high rate of malfunction due to disconnection of the metal wiring. 2. Description of the Related Art A conventional semiconductor device is manufactured according to the same design standard as an element constituting an integrated circuit without distinguishing between a light receiving unit that receives light and an electronic circuit that performs signal processing. Therefore, the metal wiring in the region where the light source contacts is designed with a fine line width like other regions.
【０００８】請求項４の発明は、請求項１に記載された
半導体装置において、前記光源接触部及び前記電子回路
は金属配線を有し、前記光源接触部の金属配線は、前記
電子回路の金属配線よりも線幅が大きいことを特徴とす
る。この構成により、光源接触部の金属配線は、光源の
接触により損傷を受けても断線する確率が極めて小さく
なるので、光源の接触による損傷が軽減される半導体装
置を提供することが可能となる。According to a fourth aspect of the present invention, in the semiconductor device according to the first aspect, the light source contact portion and the electronic circuit have a metal wiring, and the metal wiring of the light source contact portion is a metal wiring of the electronic circuit. It is characterized in that the line width is larger than the wiring. With this configuration, the probability that the metal wiring of the light source contact portion is disconnected even if it is damaged by the contact of the light source is extremely small, so that it is possible to provide a semiconductor device in which the damage due to the contact of the light source is reduced.
【０００９】[0009]
【発明の実施の形態】以下、発明の実施の形態について
図面を参照して説明する。図１は、本発明に係る半導体
装置１の平面構成図である。図２は、図１のＡ−Ａ’部
分における断面図である。本半導体装置１は、入射した
光によって光電変換する受光部２と、トランジスタ等か
らなる電子回路５と、電子回路５と受光部２とを電気的
に分離し光ファイバ３が接触する分離領域４を有する。
よって本半導体装置１は、受光部２と電子回路５とが一
つのチップに配置されるワンチップセンサである。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a plan view of a semiconductor device 1 according to the present invention. FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG. The semiconductor device 1 includes a light receiving unit 2 that performs photoelectric conversion by incident light, an electronic circuit 5 including a transistor and the like, and a separation region 4 in which the electronic circuit 5 and the light receiving unit 2 are electrically separated and the optical fiber 3 contacts. Having.
Therefore, the semiconductor device 1 is a one-chip sensor in which the light receiving unit 2 and the electronic circuit 5 are arranged on one chip.
【００１０】受光部２と分離領域４とは、逆導電型の不
純物拡散がなされており、逆バイアスされる。光ファイ
バなどの光源は、平面的に観察して分離領域４の内側に
なるように配置される（図１参照）。光源は、放射エネ
ルギーの離散を防止するため、出来る限り受光部２に近
接させて配置する。これを接触させる必要は無いもの
の、セッティングの際に接触することがある。The light receiving section 2 and the isolation region 4 are reverse-conducted impurity diffused, and are reverse-biased. A light source such as an optical fiber is disposed so as to be inside the separation region 4 when viewed in a plane (see FIG. 1). The light source is arranged as close as possible to the light receiving unit 2 in order to prevent the radiation energy from being dispersed. It is not necessary to contact this, but it may come into contact during setting.
【００１１】電子回路５は、能動領域を有する。しか
し、分離領域４は、受光部２と電子回路５とを電気的に
遮断すれば良く、能動領域を有しない。このため、上記
のように光ファイバなどの光源が接触しても分離領域と
しての機能が低下することはない。また、本実施形態の
半導体装置１は、配線６の線幅５０マイクロメートル、
配線７の線幅が２マイクロメートルである。即ち、分離
領域に配置される配線６は、電子回路５に配置される配
線７より線幅が大きい。このため、光源の接触による配
線６の切断が低減されるとともに、電子回路５の微細化
が可能である。The electronic circuit 5 has an active area. However, the isolation region 4 only needs to electrically cut off the light receiving unit 2 and the electronic circuit 5 and does not have an active region. For this reason, even if the light source such as an optical fiber contacts as described above, the function as the separation region does not decrease. Further, the semiconductor device 1 of the present embodiment has a line width 50 μm of the wiring 6,
The line width of the wiring 7 is 2 micrometers. That is, the line 6 arranged in the isolation region has a larger line width than the line 7 arranged in the electronic circuit 5. Therefore, the disconnection of the wiring 6 due to the contact of the light source is reduced, and the electronic circuit 5 can be miniaturized.
【００１２】なお、ここでは、光源が接触する領域であ
る光源接触部を分離領域としたが、これに限るものでは
ない。例えば、受光部の周囲に余分な光を光電変換させ
る模擬受光部を配置させ、これを光源接触部としても良
い。In this case, the light source contact portion, which is a region where the light source contacts, is set as the separation region. However, the present invention is not limited to this. For example, a simulated light-receiving unit for photoelectrically converting extra light may be arranged around the light-receiving unit, and this may be used as a light source contact unit.
【００１３】[0013]
【発明の効果】以上詳述したように、本発明の半導体装
置は、光源が接触することを想定した領域を予め設け
る。このため、光源が接触してもそのダメージによる損
傷が軽減されるという効果がある。As described above in detail, the semiconductor device of the present invention is provided with a region in which a light source is assumed to come into contact. For this reason, there is an effect that even if the light source contacts, the damage due to the damage is reduced.
【図１】本発明に係る半導体装置の平面構成図である。FIG. 1 is a plan view of a semiconductor device according to the present invention.
【図２】図１のＡ−Ａ’部分における断面図である。FIG. 2 is a cross-sectional view taken along the line A-A 'of FIG.
１ 半導体装置 ２ 受光部 ３ 光ファイバ ４ 分離領域（光源接触部） ５ 電子回路 ６ 配線 ７ 配線 DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Light-receiving part 3 Optical fiber 4 Separation area (light source contact part) 5 Electronic circuit 6 Wiring 7 Wiring
Claims (4)
と、能動領域を有し前記受光部からの信号を入力して信
号処理する電子回路とを設けた半導体集積回路におい
て、 前記受光部の周囲には光源接触部が配置されていること
を特徴とする半導体集積回路。1. A semiconductor integrated circuit, comprising: a light receiving unit for performing photoelectric conversion by incident light; and an electronic circuit having an active area for inputting a signal from the light receiving unit and performing signal processing. A light source contact portion is disposed on the semiconductor integrated circuit.
ないことを特徴とする請求項１に記載の半導体装置。2. The semiconductor device according to claim 1, wherein the light source contact portion does not have the active area.
ることを特徴とする請求項１に記載の半導体装置。3. The semiconductor device according to claim 1, wherein the light source contact portion is formed of an element isolation region.
配線を有し、前記光源接触部の金属配線は、前記電子回
路の金属配線よりも線幅が大きいことを特徴とする請求
項１に記載の半導体装置。4. The electronic device according to claim 1, wherein the light source contact portion and the electronic circuit have a metal wire, and the metal wire of the light source contact portion has a larger line width than the metal wire of the electronic circuit. 13. The semiconductor device according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10195678A JP2000031443A (en) | 1998-07-10 | 1998-07-10 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10195678A JP2000031443A (en) | 1998-07-10 | 1998-07-10 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000031443A true JP2000031443A (en) | 2000-01-28 |
Family
ID=16345191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10195678A Pending JP2000031443A (en) | 1998-07-10 | 1998-07-10 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000031443A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2022540988A (en) * | 2019-07-24 | 2022-09-21 | エーエスエムエル ホールディング エヌ．ブイ． | On-chip wafer alignment sensor |
-
1998
- 1998-07-10 JP JP10195678A patent/JP2000031443A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2022540988A (en) * | 2019-07-24 | 2022-09-21 | エーエスエムエル ホールディング エヌ．ブイ． | On-chip wafer alignment sensor |
| JP7511592B2 (en) | 2019-07-24 | 2024-07-05 | エーエスエムエル ホールディング エヌ．ブイ． | On-chip Wafer Alignment Sensor |
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