JP2000026972A - Semiconductor producing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor producing apparatus capable of improving operability and productivity, and capable of being made small in size and small in occupancy space. SOLUTION: In this apparatus including a plasma treating chamber 2 and a carrying holding means 14 for a substrate carried into the plasma treating chamber 2 and forming a thin film on the substrate in the plasma treating chamber 2, a delivering region 8 is provided at one end part of the plasma treating chamber 2. Furthermore, the carrying holding means 14 is composed of a lifting mechanism 15 of supporting the substrate in the delivering region 8, a holding 16 holding the substrate via a susceptor, a carrying mechanism 17 moving the holder 16 from the delivering region 8 to the other end part of the plasma treating chamber 2 and a flexible support raising and lowering the susceptor and holding the substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a semiconductor manufacturing apparatus including a CVD apparatus, a sputtering apparatus, and the like, and more particularly, to a transfer mechanism for a substrate carried into the semiconductor manufacturing apparatus.

[0002]

2. Description of the Related Art As shown in FIG. 9, a conventional semiconductor manufacturing apparatus is provided with a plasma processing chamber 2, an upper electrode 36 suspended above the plasma processing chamber 2, and a lower part of the plasma processing chamber 2. And a lower electrode 37. A vacuum pump 12 and an abatement device 13 are connected to the plasma processing chamber 2. The high-frequency power supply 5, gas mass flow controller 6, and cylinder cabinet 7 are connected to the upper electrode 36, respectively. Further, the susceptor 21 is mounted on the lower electrode 37, and the substrate 1 is mounted on the susceptor 21.

[0003] The semiconductor manufacturing apparatus thus configured is
When the substrate 1 is set on the susceptor 21, the substrate 1
Is stopped, plasma processing such as CVD or sputtering is performed, and a thin film is formed on the substrate 1.

A related prior art document relating to this type of semiconductor manufacturing apparatus is disclosed in Japanese Patent Laid-Open No. 6-101050.

[0005]

In the conventional semiconductor manufacturing apparatus, plasma processing such as CVD or sputtering is simply performed with the substrate 1 stopped as described above. However, there is a problem that the plasma processing cannot be performed, and the workability and productivity cannot be improved. To solve this problem, the susceptor 21
Is moved to transport the substrate 1. However, in this method, since the weight and size of the lower electrode 37 are large, it is not possible to avoid an increase in the size of the device itself, and it is not possible to satisfy the demand for space saving.

The present invention has been made in view of the above problems, and can improve workability and productivity.
It is an object of the present invention to provide a semiconductor manufacturing apparatus that can be expected to reduce the size and space of the apparatus.

[0007]

According to the first aspect of the present invention, in order to achieve the above object, a processing chamber and a means for transporting and holding a processing material carried into the processing chamber are provided. Forming a thin film on the processing material, providing a delivery area at one end of the processing chamber, the transfer holding means includes a lift mechanism for supporting the processing material in the delivery area, and a susceptor for transferring the processing material. And a holder to hold through
It is characterized by comprising a transport mechanism for moving the holder from the delivery area to the other end of the processing chamber, and a flexible support for raising and lowering the susceptor to hold the processing material.

It is preferable that the flexible support includes a shaft that moves the susceptor up and down from below the susceptor via a spring member. Preferably, the flexible support includes a screw member that contacts the lower surface of the susceptor and a shaft that rotates the screw member. Further, it is preferable that the flexible support includes a pin member that contacts the lower surface of the susceptor and a cam mechanism that moves the pin member up and down.

Here, the processing material in the claims means a material on which various plasma processing such as CVD (for example, normal pressure CVD) or sputtering is performed, and at least various glass used for a liquid crystal display device. Substrates and silicon substrates are included. Further, the thin film includes an insulating film, an electrode wiring film, or a semiconductor film. In addition, the heating device of the processing chamber includes a resistance heating method, an infrared heating method, or a hot air heating method,
There is no particular limitation as long as the substrate can be heated.

The transport mechanism may be any mechanism that reciprocates the holder from the delivery area to the other end of the processing chamber, and includes at least a conveyor mechanism with little dust generation, a combination of a ball screw and a feed nut, and the like. The flexible support may be any mechanism as long as it raises and lowers the susceptor and holds the processing material on it. included. Further, there are various types of the spring member and the screw member, but any type may be used, and the number may be increased or decreased.

According to the first aspect of the present invention, the flexible support of the carrying and holding means raises and lowers the susceptor of the holder to dispose the processing material on the holder, and prevents the processing material from shifting. Therefore, if the transport mechanism is operated, a film forming process such as CVD or sputtering can be performed while transporting the processing material in the processing chamber, and a thin film can be formed on the processing material.

According to the second aspect of the present invention, the spring member of the flexible support expands and contracts up and down to raise and lower the susceptor of the holder, and arranges the processing material in the holder. Prevent displacement. Therefore, by operating the transfer mechanism, plasma processing can be performed while transferring the processing material in the processing chamber, and a thin film can be formed on the processing material. Further, according to the third aspect of the present invention, the screw member of the flexible support is rotated to raise and lower the susceptor of the holder, dispose the processing material on the holder, and prevent displacement of the processing material during transportation. . Therefore, by operating the transfer mechanism, it becomes possible to perform plasma processing while transferring the processing material in the processing chamber, and to form a thin film on the processing material.

According to the fourth aspect of the present invention, the cam mechanism of the flexible support raises and lowers the pin to raise and lower the susceptor of the holder, sets the processing material on the holder, and transfers the processing material to the holder. Prevent displacement. Therefore, by operating the transfer mechanism, plasma processing can be performed while transferring the processing material in the processing chamber, and a thin film can be formed on the processing material.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited to the following embodiments. As shown in FIG. 1 and the like, a semiconductor manufacturing apparatus according to the present embodiment includes a plasma processing chamber 2 for performing plasma processing such as CVD or sputtering on a substrate 1,
And a transfer holding unit 14 for the substrate 1 carried into the plasma processing chamber 2.

As shown in FIGS. 1 and 2, the plasma processing chamber 2 has a horizontally long and substantially box structure, and a heater 3 as a heating device (comprising a halogen lamp or the like) is provided at one upper end of the chamber. A plasma chamber 4 is provided integrally at a substantially central portion of the upper portion, and a heater 3 made of a halogen lamp or the like is provided at both ends at a lower portion. The plasma chamber 4 is connected to a high-frequency power source 5 for inducing plasma discharge, a gas mass flow controller 6, and a cylinder cabinet 7.

A transfer area 8 for the substrate 1 is installed at one end inside the plasma processing chamber 2, and a load lock chamber 9, which is a vacuum spare chamber, is provided at one end of the plasma processing chamber 2 with an airtight gate. The load lock chamber 9 is connected to a fork 11 which is a device for transferring the substrate 1.
Are installed so as to be able to reciprocate with respect to the delivery area 8. The other end of the plasma processing chamber 2 is connected to a vacuum pump 12 and an abatement device 13, respectively.

The transport holding means 14 includes a lift mechanism 15, a holder 16, a transport mechanism 17, and a flexible support 18, as shown in FIGS. The lift mechanism 15 includes an elevable lifter pin 19 that defines a plane rectangle.
(Four in this embodiment), and the plurality of lifter pins 19 are provided in the delivery area 8. Also, holder 1
Reference numeral 6 denotes a stainless steel frame 20 having excellent corrosion resistance and the like, and a susceptor 21 on which the substrate 1 is detachably mounted is supported in a hollow inside the frame 20 so as to be able to move up and down. Plate-shaped masks 22 made of alumina or the like are adhered to both sides of the surface of the frame 20, respectively. The plurality of masks 22 are respectively positioned on both sides inside the hollow of the frame 20 to bring the substrate 1 and the susceptor 21 into close contact.

The susceptor 21 is made of plate-shaped carbon coated with SiC, and is provided with a plurality of through holes 23 (four in this embodiment) penetrating through each lifter pin 19 in a plane rectangular shape. On both sides of the lower surface of the susceptor 21, a plurality of support pieces 24 bent in a substantially Z-shaped vertical section are adhered at intervals, and each support piece 24 faces the mask 22 from below, and each support piece 24 Is located inside the frame 20.

The transfer mechanism 17 has a guide rail 25 located on both sides of the holder 16 and a rotatable linear rail (made of a ball screw or the like) 26 disposed in parallel between both ends of the plasma processing chamber 2. The output shaft of the driving device 27 is connected to the other end of the rail 26. A feed nut 28 is screwed onto the linear rail 26, and the feed nut 2
8 is fixed to the side of the holder 16. Such a transport mechanism 17 moves the holder 16 to a predetermined position at a predetermined speed while being guided by the guide rail 25 when the driving device is driven.

Further, the flexible support 18 has a rod 29 with a coil spring 29a on the lower surface of the free end of each support piece 24. This rod 29 has a substantially inverted T-shaped cross section.
Is inserted through a slot into the upper part of the shaft 30 that can be moved up and down. The upper portion of the shaft 30 is formed in a substantially channel shape, and extends in the depth direction of FIG.

In the above configuration, when performing plasma processing such as CVD on the substrate 1, first, the substrate 1 is loaded into the load lock chamber 9, and the load lock chamber 9 and the plasma processing chamber 2 are brought to the ultimate vacuum 0. Evacuated to 0.001 Torr,
After that, it is transferred to the plasma processing chamber 2. To explain this point in detail, first, the gate valve 10 is opened, and the flexible support 18 descends from the uppermost point to the lowermost point to lower the susceptor 21.

Next, the fork 11 on which the substrate 1 is mounted moves from the load lock chamber 9 to the plasma processing chamber 2 and stops at a predetermined position, and the lifter pin 1 which has been lowered to the lowest point.
9 rises and stops with the substrate 1 slightly lifted, the fork 11 returns from the plasma processing chamber 2 to the load lock chamber 9, and the gate valve 10 is closed. When the gate valve 10 is closed, the flexible support 18 rises from the lowest point to a predetermined position, transfers the substrate 1 to the susceptor 21, and the lifter pins 19 move down to the lowest point. When the substrate 1 is carried into the plasma processing chamber 2, the upper and lower heaters 3 operate to preheat the stationary substrate 1 and also heat the substrate 1 being transported to a uniform temperature.

Next, the high frequency power supply 5 (for example, 13.5
6MHz is used) and the cylinder cabinet 7
Is introduced into the plasma processing chamber 2 via the gas mass flow controller 6 to form plasma. Further, when the plasma is formed, a process gas such as silane in the cylinder cabinet 7 is introduced into the plasma processing chamber 2 via the gas mass flow controller 6, and the substrate 1 is transported below the process gas so that the substrate 1 is transferred. The CVD process is sequentially performed from one end.
When the plasma processing is completed, the transfer mechanism 17 stops the holder 16, the high-frequency power supply 5, the plasma forming gas, and the process gas are turned off, and the holder 16 moves to the delivery area 8.

Next, the flexible support 18 descends to lower the susceptor 21, and the lifter pins 19 rise to lift the substrate 1 from the susceptor 21.
0 is open. When the gate valve 10 is opened, the fork 11 moves to the plasma processing chamber 2 and stops at a predetermined position, and the lifter pins 19 descend to transfer the substrate 1.
Then, the fork 11 returns from the plasma processing chamber 2 to the load lock chamber 9, the gate valve 10 is closed, and the load lock chamber 9 is brought to the atmospheric pressure, and then the substrate 1 is taken out.

According to the above configuration, plasma processing such as CVD or sputtering can be performed while the substrate 1 is being transferred in the plasma processing chamber 2 to form a film, so that workability and productivity can be significantly improved. it can. Therefore, the size of the apparatus can be reduced, the time for the evacuation step and the like can be shortened, and products can be produced extremely efficiently. Also, when used as an atmospheric pressure CVD apparatus, the deposition rate is high and the step coverage is relatively good. Also,
Since the structure is simple, simplification of the configuration and reduction of the number of parts can be expected. Further, the substrate 1 can be taken in and out without opening the plasma processing chamber 2 to the atmosphere. Further, the plasma processing chamber 2 and the load lock chamber 9 can be separated by the gate valve 10.

Further, since the heater 3 heats the substrate 1 in a stopped state or during movement, the temperature of the substrate 1 can be kept constant. In addition, it is possible to shorten the heating time. Also, the plurality of lifter pins 19 move up and down to move the fork 1
Since a space is formed between the substrate 1 and the susceptor 21, the formation of this space allows the transfer of the substrate 1 supported by the plurality of lifter pins 19 from the fork 11 to the holder 16,
Alternatively, the transfer from the holder 16 to the fork 11 is smooth and easy. When the linear rail 26 is rotated, the holder 16 connected to the linear rail 26 via the feed nut 28 moves at a predetermined high speed in the direction of one end or the other end of the plasma processing chamber 2. Further, with the stop of the linear rail 26, the holder 16 can be accurately stopped at a predetermined position.

FIGS. 5 and 6 show a second embodiment of the present invention. In this case, the flexible support 18 is provided with a screw 31 for raising and lowering the susceptor 21, and the screw 31 is attached from below. Rotatable shaft 32 to rotate
It is composed of The screw 31 is vertically supported by a lower portion of the frame 20 via a bearing, and contacts the lower surface of the free end of each support piece 24. The other parts are the same as those in the above-described embodiment, and the description is omitted.

In the above configuration, when performing plasma processing such as CVD on the substrate 1, the substrate 1 is carried into the load lock chamber 9, and the load lock chamber 9 and the plasma processing chamber 2 reach the ultimate vacuum of 0.001 Torr. It is evacuated to vacuum and then transferred to the plasma processing chamber 2. To explain this point in detail, first, the gate valve 10 is opened, the flexible support 18 descends from the uppermost point to the lowermost point, and the susceptor 2
Lower 1

Next, the fork 11 on which the substrate 1 is mounted moves from the load lock chamber 9 to the plasma processing chamber 2 and stops at a predetermined position, and the lifter pin 1 having been lowered to the lowest point.
9 rises and stops with the substrate 1 slightly lifted, the fork 11 returns from the plasma processing chamber 2 to the load lock chamber 9, and the gate valve 10 is closed. When the gate valve 10 is closed, the flexible support 18 rises from the lowest point to a predetermined position, transfers the substrate 1 to the susceptor 21, and the lifter pins 19 move down to the lowest point. When the substrate 1 is carried into the plasma processing chamber 2, the heaters 3 operate to preheat the stationary substrate 1 and also heat the substrate 1 being transported to a uniform temperature.

Next, the high frequency power supply 5 is turned on, and a plasma forming gas such as oxygen in the cylinder cabinet 7 is introduced into the plasma processing chamber 2 via the gas mass flow controller 6 to form plasma. Further, when the plasma is formed, a process gas such as silane in the cylinder cabinet 7 is introduced into the plasma processing chamber 2 via the gas mass flow controller 6, and the substrate 1 is transported below the process gas so that the substrate 1 is transferred. The CVD process is sequentially performed from one end. When the plasma processing is completed, the transfer mechanism 17 stops the holder 16, the high-frequency power supply 5, the plasma forming gas, and the process gas are turned off, and the holder 16 moves to the delivery area 8.

Next, the flexible support 18 descends to lower the susceptor 21, and the lifter pins 19 rise to lift the substrate 1 from the susceptor 21.
0 is open. When the gate valve 10 is opened, the fork 11 moves to the plasma processing chamber 2 and stops at a predetermined position, and the lifter pins 19 descend to transfer the substrate 1.
Then, the fork 11 returns from the plasma processing chamber 2 to the load lock chamber 9, the gate valve 10 is closed, and the load lock chamber 9 is brought to the atmospheric pressure, and then the substrate 1 is taken out. Also in this embodiment, the same operation and effect as the above embodiment can be expected, and since the screw 31 is used,
Obviously, precise operation can be easily obtained.

FIGS. 7 and 8 show a third embodiment of the present invention. In this case, the flexible support 18 is provided with a pin 33 for raising and lowering the susceptor 21 and a cam for raising and lowering the pin 33. It comprises a mechanism 34 and a roller 35. The cam mechanisms 34 are mounted on both sides of the frame 20, respectively, and rotate the cams 34 a to raise and lower the lower surfaces of the free ends of the support pieces 24 via the pins 33 based on driving of a driving device such as a motor. The other parts are the same as those in the above-described embodiment, and the description is omitted.

In this embodiment, it is clear that the same operation and effect as those of the above embodiment can be expected, and since the cam mechanism 34 is used, complicated movement can be easily obtained.

[0034]

As described above, according to the present invention, workability and productivity can be improved. Further, there is an effect that a reduction in the size and space of the device can be expected.

[Brief description of the drawings]

FIG. 1 is a plan view showing an embodiment of a semiconductor manufacturing apparatus according to the present invention.

FIG. 2 is a side view showing an embodiment of the semiconductor manufacturing apparatus according to the present invention.

FIG. 3 is a main part plan view showing an embodiment of a semiconductor manufacturing apparatus according to the present invention.

FIG. 4 is a front view of FIG. 3;

FIG. 5 is a main part plan view showing a second embodiment of the semiconductor manufacturing apparatus according to the present invention.

FIG. 6 is a front view of FIG. 5;

FIG. 7 is a main part plan view showing a third embodiment of the semiconductor manufacturing apparatus according to the present invention.

FIG. 8 is a front view of FIG. 7;

FIG. 9 is an explanatory view showing a conventional semiconductor manufacturing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate (processing material) 2 Plasma processing chamber (processing chamber) 3 Heater 4 Plasma chamber 8 Delivery area 9 Load lock chamber 10 Gate valve 11 Fork 14 Transport holding means 15 Lift mechanism 16 Holder 17 Transport mechanism 18 Flexible support 19 Lifter pin 20 Frame 21 Susceptor 22 Mask 23 Through hole 24 Support piece 17 Transport mechanism 26 Linear rail 27 Drive device 28 Feed nut 29 Rod 29a Coil spring (spring member) 30 Shaft 31 Screw (Screw member) 32 Shaft 33 Pin (Pin member) 34 Cam Mechanism 34a cam

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4G059 AC14 DB02 EB02 EB04 4K029 AA06 AA24 BD01 CA05 KA01 KA09 4K030 CA04 CA12 GA12 GA14 KA45 LA15 5F045 BB10 DP01 EB08 EH10 EK11 EM02 EN04

Claims (4)

[Claims] 1. A semiconductor manufacturing apparatus, comprising: a processing chamber; and a conveying and holding means for processing material carried into the processing chamber, wherein the semiconductor manufacturing apparatus forms a thin film on the processing material in the processing chamber. A transfer area, a transfer mechanism for supporting the processing material in the transfer area, a holder for holding the processing material via a susceptor, and a transfer mechanism for transferring the holder from the transfer area to the processing chamber. And a flexible support for moving the susceptor up and down to hold the processing material. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the flexible support includes a shaft that moves the susceptor up and down from below the susceptor via a spring member. 3. The semiconductor manufacturing apparatus according to claim 1, wherein the flexible support includes a screw member that contacts a lower surface of the susceptor, and a shaft that rotates the screw member. 4. The semiconductor manufacturing apparatus according to claim 1, wherein the flexible support includes a pin member that contacts the lower surface of the susceptor, and a cam mechanism that moves the pin member up and down.