JP2000021946A - Apparatus for manufacturing semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a semiconductor, which can decrease the load on a mechanism for vertically moving stage units, when carrying a substrate into or out of an auxiliary vacuum chamber, and facilitates evacuation of air with a vacuum pump, and facilitates addition of various heating and cooling mechanisms and control of a stage temperature. SOLUTION: An apparatus for manufacturing a semiconductor has first auxiliary vacuum chamber 21, a second auxiliary vacuum chamber 22, and a substrate processing chamber 23, and is provided with a turnable 30 which is freely rotatable and movable vertically in the second auxiliary vacuum chamber, and the turnable 30 has at least four substrate placement portions 33. The apparatus has stage units 40 which can move vertically, in response to each substrate placement portion 33 at the bottom plate portion of the second auxiliary vacuum chamber responding to the underside of the first auxiliary vacuum chamber 21 and the substrate processing chamber 23, and semiconductor substrates are carried from the substrate placement portions into the first auxiliary vacuum chamber and the substrate processing chamber, respectively by moving each stage of the stage units 40 in the vertical directions, or conversely carrying the semiconductor substrate to the substrate placement portions 33.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION In a semiconductor manufacturing apparatus for performing a reduced pressure processing among ashing, etching, film forming processing, etc., an apparatus having a vacuum preparatory chamber for improving productivity, and two or more sheets. More specifically, the present invention relates to a structure of a substrate mounting stage and a turntable.

[0002]

2. Description of the Related Art FIGS. 7 and 8 show a known semiconductor substrate processing apparatus as disclosed in Japanese Utility Model Laid-Open No. 84428/1994, in which a turntable and a substrate mounting stage are driven separately. This shows a conventional example. In these figures, a vacuum chamber 50 is formed as a circular hollow body, and the inside of the vacuum chamber is constantly evacuated from a plurality of exhaust ports 52 opened on the periphery of the bottom surface of the main body 51 to maintain a predetermined degree of vacuum. It is supposed to be. Vacuum chamber 5
In the area corresponding to the three circular openings 53, 54, 55 opened at an equal angle of 120 degrees at the upper part of 0, a substrate loading side preliminary chamber 56, a substrate processing chamber 57, and a substrate unloading side preliminary chamber are provided. 58 are provided.

[0003] The substrate loading side preliminary chamber 56 has an exhaust port 59 and is provided with a gate 60. The gate is moved up and down by a gate cylinder 61 to open and close the opening of the preliminary chamber 56, and is further protected by a seal ring. The inside of the chamber 56 is kept airtight. The processing chamber 57 has a plasma generator (not shown) in the upper part, and a predetermined processing gas is flowed into the plasma generator. This occurs inside the substrate 57 so that the substrate can be processed.

[0004] At a central portion in the vacuum chamber 50, a column 65 is erected, and a rotary cylinder 66 with a bearing is rotatably provided on the column. Susceptors 72 are provided at three locations corresponding to the three circular openings 53, 54, 55 of the upper plate of the vacuum chamber.
Disk 70 provided with a circular opening 71 for mounting
Is parallel to the top plate of the vacuum chamber, and
It is provided so as to be integrally rotatable.

The driving force of the motor M attached to the lower surface of the vacuum chamber main body 51 is transmitted to the gear of the drive shaft provided hermetically via a seal ring and the gear attached to the rotary cylinder 66 for rotation. The cylinder 66 is rotated, and the rotating disk 70 is rotated by exactly 120 degrees integrally therewith, and the substrate P is transferred to the substrate loading side preliminary chamber 56 → the substrate processing chamber 57 → the substrate unloading side preliminary chamber 58. They are automatically transported in sequence.

[0006] A pusher 67 is provided corresponding to the preliminary chambers 56 and 58, and a processing chamber pusher 68 is provided corresponding to the processing chamber 57. The pusher 67 has a disk shape having a diameter sufficient to push up the susceptor 72 through the opening 71, and has three pins 69 on the upper surface thereof for pushing up the substrate P mounted on the susceptor 72 horizontally. And a seal ring is provided on the outer peripheral edge of the upper surface.

At the center of the lower surface of the pusher 67, a drive shaft 73 of a cylinder which moves up and down is connected via a small-diameter opening provided concentrically with the opening 53 in the vacuum chamber main body 51. A bellows 75 is attached between the vacuum chamber main body 51 and the cylinder drive shaft 73 in the 74 so as to surround the opening so that the airtightness in the vacuum chamber 50 does not leak.

In the processing apparatus having such a structure, the vacuum preparatory chambers 56, 58 are not released to the atmosphere when the substrate P is loaded and unloaded, so that the pusher 67 of the unloading side preliminary chamber 58 and the loading side preliminary chamber 56 is used. The load imposed on the up and down movement of the motor increases, which causes a problem in the safety of the mechanism. Further, since the loading and unloading of the substrate is performed by the three pins 69, it is impossible to perform the temperature control stepwise, and furthermore, the transfer of the substrate from the susceptor to the pin or the stage in the vacuum transfer unit is unstable. There was a disadvantage.

In addition, in such a conventional example, since the rotating disk 70 does not move up and down, the column 65 can be installed at the center of the vacuum chamber 50. Although it is possible to prevent the deformation due to the pressure fluctuation, it is necessary to introduce power using a gear or a belt as a driving means for the rotating disk 70 in the vacuum chamber. For this reason, since it is necessary to provide these power introducing means in the vacuum chamber 50, there is an important problem that an increase in dust generation due to them is inevitable. In addition, such an apparatus has one processing chamber and one vacuum preparatory chamber for loading and unloading substrates, and has a drawback of low processing capacity.

[0010] On the other hand, in a reduced pressure processing apparatus using plasma such as ashing, etching, and film forming processing, there is the following conventional example in which a two-packet simultaneous processing apparatus is used. The semiconductor manufacturing apparatus 80 shown in FIGS. 9 and 10 is an outline of the apparatus previously proposed by the present inventors,
Processing chamber 81 for processing two semiconductor substrates P at the same time
And a first vacuum preparatory chamber 82 and a second vacuum preparatory chamber 83, and a load / load for these semiconductor substrates P.
In order to perform unloading in a vacuum without using a transfer robot, it has a turntable 85 that can be rotated by a motor M and can be moved up and down by an elevating device 89 (see FIG. 1) and four stages 86.

The two transfer robots 87 and 88 are arranged in the atmosphere, and each of the transfer robots 87 and 88 has one or two cassette stages 90 and 91 for a substrate storage cassette. Also prepared in the atmosphere.
A buffer stage 84 is provided between the cassette stages 90 and 91 and the first pre-vacuum chamber 82. The buffer stage 84 has a stage on which at least two or more unprocessed semiconductor substrates can be mounted and a stage on which two or more processed semiconductor substrates are mounted and dissipates heat, and each stage is automatically The structure is such that the semiconductor substrate can be positioned.

In particular, FIG. 10 shows a structure for loading / unloading the processing chamber 81, the first vacuum preliminary chamber 82, the second vacuum preliminary chamber 83, and the semiconductor substrate. 180 ° rotated by a motor M and a lifting device 89
Four stages 86 are provided on a turntable 85 driven up and down by. A processing chamber 81 capable of accommodating two stages, a first vacuum preliminary chamber 82, and a second vacuum preliminary chamber 83 that can communicate with or separate the processing chamber from the first vacuum preliminary chamber are provided by the elevating device 89. By raising and lowering the table 85, the processing chamber 81, the first vacuum preliminary chamber 82,
The space between the second pre-vacuum chambers 83 is sealed and released between the upper plate portion of the second pre-vacuum chamber 83 and each stage 86.

The processing chamber 81, the first pre-vacuum chamber 82,
The second pre-vacuum chamber 83 and the like naturally include various means (not shown) required for decompression, purging, and other semiconductor processing. The processing chamber 81 includes an N ₂ gas purge opening H 1 and a decompression opening H 2. The first vacuum preliminary chamber 82 is provided with an N ₂ gas purge opening H3 and a pressure reducing opening H4, and the second vacuum preliminary chamber 83 is provided with an air purge opening H5 and a pressure reducing opening H6. The top of the first pre-vacuum chamber 82 constitutes a lid that can be opened and closed for loading and unloading semiconductor substrates.

In such an apparatus, although the transfer of the substrate in the vacuum transfer section can be stabilized and the throughput can be improved, there is a disadvantage that the capacity in the vacuum system is increased, and further, the entire stage unit is required. Due to the rotation, it was difficult to add a heating and cooling mechanism. In addition, each stage must be set to the same temperature, which has a disadvantage that it is difficult to control the substrate temperature stepwise.

[0015]

In the above-mentioned conventional semiconductor processing apparatus, when a substrate mounting stage and a turntable are integrated in a transfer system in a vacuum, the exhaust capacity of a vacuum pump is reduced. There was a disadvantage that it grew.
Further, if soft vacuum or soft purge is performed to prevent debris from rising during depressurization and purging of the pre-vacuum chamber, throughput is reduced. Further, in the conventional apparatus, it is difficult to add a lamp heating mechanism, a water cooling mechanism, a high frequency applying mechanism, etc. to the stage unit in addition to the resistance heater, and all four stages have the same temperature setting. Therefore, it was relatively difficult to control the ambient temperature in the apparatus.

The present invention solves these various difficulties, reduces the load on the mechanism for moving the stage unit up and down when loading and unloading the substrate into and from the vacuum preparatory chamber, and reduces the ease of evacuation of the vacuum pump. It is another object of the present invention to provide a device that facilitates the addition of various heating and cooling mechanisms and facilitates the control of the stage temperature. Further, in order to prevent deformation of the top plate constituting the second pre-vacuum chamber, by improving the cross-sectional shape, the center support means is not required, and the strength reduction due to the direct drive of the turntable is eliminated. Things. In addition, stage 6
It is an object of the present invention to provide an apparatus capable of reducing the size of a driving mechanism portion in the case where the number is increased to eight or in the case of processing a large substrate.

[0017]

SUMMARY OF THE INVENTION The present invention is a semiconductor manufacturing apparatus having a first vacuum preliminary chamber, a second vacuum preliminary chamber, and a substrate processing chamber, wherein the second vacuum preliminary chamber is rotatable and vertically movable. A turntable having at least four substrate mounting portions; a second vacuum preliminary chamber bottom plate at a position corresponding to a position below the first vacuum preliminary chamber and the substrate processing chamber; It has a stage unit that can move up and down corresponding to each of the substrate mounting units. By moving each stage of these stage units up and down, the semiconductor substrate is respectively moved from the substrate mounting unit into the first vacuum preliminary chamber and the processing chamber. A semiconductor manufacturing apparatus for transporting and, conversely, transporting and mounting a semiconductor substrate on the substrate mounting portion. The turntable is 9
Intermittent rotation of every 0 degree or forward / reverse rotation of 180 degrees is possible, and the substrate mounting part is located between the top plate of the second vacuum preparatory chamber and the sealing surface of each stage on both upper and lower surfaces. By holding the seal member, the first vacuum preliminary chamber,
A decompression chamber can be defined between the second pre-vacuum chamber and the processing chamber. Further, the substrate mounting portion of the turntable has a hole through which the upper part of each corresponding stage penetrates, and a step portion for mounting and locking the processing substrate is provided inside the hole. Having a plurality of claws. On the other hand, a circular concave portion for placing and locking the substrate is provided on the upper end surface of each stage, and for each stage unit, a lamp heating mechanism, a water cooling cooling mechanism, and a high frequency applying mechanism can be added. . Further, in the semiconductor manufacturing apparatus of the present invention, the top plate of the second pre-vacuum chamber has a cross-sectional shape of a hat-shape to prevent deformation during pressure reduction.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of a semiconductor manufacturing apparatus according to the present invention will be described with reference to FIGS. FIG. 1 shows an apparatus 1 of the present invention showing the arrangement of each means having an arrangement substantially similar to that of the semiconductor manufacturing apparatus proposed by the present inventors (see FIGS. 9 and 10).
0 is a plan view. It has, for example, two transfer robots 11 and 12 that constitute a transfer unit in the atmosphere. The transfer robots 11 and 12 remove, for example, unprocessed semiconductor substrates from the cassette stages 13 and 14 in the vacuum device unit 20. The variously processed semiconductor substrates are transported to one vacuum preliminary chamber 21 and from the vacuum preliminary chamber 21 to the buffer stage 15. Since the configuration of the transport unit itself in the atmosphere is not particularly novel, detailed description thereof will be omitted.

As shown above, reference numeral 20 in the drawing indicates the planar arrangement of the entire vacuum device having the characteristic structure of the present invention.
And a processing chamber 23. FIG. 2 schematically shows an AA cross section of the vacuum device section 20 in FIG. 1, and in addition to the first vacuum preliminary chamber 21, the second vacuum preliminary chamber 22, and the processing chamber 23, Various means for defining each chamber and moving the substrate during the processing of the semiconductor substrate in the apparatus section 20 are shown.

The turntable 30, which is located in the second pre-vacuum chamber 22 constituted by a hatched portion and is rotatable intermittently every 90 degrees and can be turned 180 degrees, is provided with a turntable driving motor M. This is a so-called direct drive that is rotated by the motor and further fixed to a shaft 32 driven by a turntable vertical movement mechanism 31. On the outer peripheral portion of the turntable 30, there are provided substrate mounting portions 33 on which four substrates P are mounted at symmetrical positions. Each of the substrate mounting portions 33 has a hole 35 through which the stage 41 can be inserted.
Is provided.

Two stage units indicated by reference numeral 40 are provided below the first vacuum preliminary chamber 21 and the processing chamber 23, respectively. It is a configuration to do. Then, each stage 41 moves up and down through a hole 35 provided in the substrate mounting portion 33 of the turntable 30. Therefore, the substrate P is moved by the stage 41 or its upper surface.
Can be moved up and down.

As is apparent from FIG. 2, the shaft 32 for driving the turntable 30 and the opening 2 through which each stage 41 penetrates are naturally formed in the bottom plate portion of the second pre-vacuum chamber 22.
4 and 25 are provided, but the airtightness of these parts is
Both are held by bellows B as described later. In order to define the first vacuum preparatory chamber 21, the second vacuum preparatory chamber 22, and the processing chamber 23, the components between them and the substrate mounting portion 33 of the turntable 30 are schematically illustrated in the drawings. Although only described, each is provided with an O-ring OL, whereby it is possible to form an airtightness between the members as required.

Further, although the top plate TP constituting the second vacuum preparatory chamber 22 is shown hatched together with its cylindrical container portion, its cross-sectional shape is particularly a hat-shape. The large-diameter top plate portion can be prevented from being deformed by the decompression force inside 22 without any special reinforcement or support structure. The first vacuum preparatory chamber 21 and the processing chamber 23 are respectively connected to the top plate TP whose central portion is raised in a hat shape.

The processing chamber 23, the first pre-vacuum chamber 21,
Like the conventional example shown in FIG. 9, the second vacuum preparatory chamber 22 and the like are equipped with various means (not shown) required for decompression, purging, and other semiconductor processing. The processing chamber 23 has an N ₂ gas purge opening H1. , An opening H2 for depressurization, an opening H3 for purging N ₂ gas, an opening H4 for depressurizing in the first vacuum preliminary chamber 21.
However, an air purge opening H5 is provided in the second vacuum preliminary chamber 22.
The decompression openings H6 are provided respectively. The top of the first pre-vacuum chamber 21 forms a lid that can be opened and closed for loading and unloading semiconductor substrates.

FIG. 3 is a sectional view of the substrate mounting portion 33 shown in FIG.
In other words, it has a turntable 30 directly rotated by a drive shaft 32 and, for example, four ring-shaped portions 34 provided integrally therewith. As described later, a plurality of claws 36 for mounting and positioning the substrate P are provided inside the stage through hole 35.

The stage unit indicated by reference numeral 40 in FIG.
The upper part of each stage unit 40 schematically shown in FIG.
These are connected to the opening 2 in the bottom plate of the second vacuum preliminary chamber 22.
5, a sealing flange 26 for positioning is shown. Each of the bellows B described above has a stage elevating mechanism 43 (schematically shown in FIG. 2) provided inside the sealing flange body 26 and on a base (not shown).
And a seal portion. The attachment of the bellows B for maintaining the airtightness in the opening 24 for the drive shaft 32 of the turntable 30 is substantially the same as described above, but any of these configurations can be appropriately applied by a known means. Is omitted.

As is clear from FIGS. 3 and 4, a plurality of vertical grooves 4 are formed on the outer peripheral wall surface of the cylindrical stage 41.
2 are provided. The size and position of the vertical groove 42 correspond to the size and position of the claw 36 projecting inward from the ring-shaped portion 34 of the substrate mounting portion 33,
As will be described later, both are engaged during the vertical movement operation of the substrate P,
Is to leave. 4, the plurality of claws 36 provided on the ring-shaped portion 34 of the substrate mounting portion 33 integrated with the turntable 30 determine the mounting position of the substrate P at the tip thereof. Step portions 37 are provided.

In this manner, the outer diameter of the substrate P is
6 are housed and placed in a circle formed by a step portion 37 provided in the stage 6, and the distal end portion of the claw 36 can pass through a vertical groove 42 provided on the outer peripheral wall surface of the stage 41. Because of the dimensional relationship, the outer diameter of the stage 41 is a structure that can reliably support the substrate P at its outer peripheral edge 45 at its raised position. 4 and 5, the outer diameter of the stage 41 can be freely inserted into the hole 35 of the ring-shaped portion 34, but the claw 36 has a structure passing through the vertical groove 42. The substrate P placed on the stepped portion 37 is stored and supported in the outer peripheral edge 45 at the upper end of the stage 41 when the stage 41 is raised, so that the temperature control on the stage can be reliably performed. I have to.

FIGS. 5 and 6 show the lower surface of the top plate TP (see FIG. 2 for the specific configuration) and the lower surface of the second vacuum auxiliary chamber 22 when each stage 41 is at the lowered position and the raised position. 1 vacuum preparatory chamber 21 (or processing chamber 23) and turntable 3
0 shows a mutual positional relationship between the substrate mounting portion 33 and the substrate P. First, FIG. 5 shows a state in which the stages 41 (for example, all) are lowered, and the turntable 30 is turned off.
Is also lowered to the position shown in FIG. Therefore, FIG.
The second pre-vacuum chamber 22 and the first pre-vacuum chamber 21 and / or the processing chamber 23 are in communication with each other.

FIG. 6 shows a state in which the stage 41 is raised by the stage elevating mechanism 43 shown in FIG. 2, and is provided on the upper and lower surfaces of the substrate mounting portion 33 of the turntable 30. O-ring OL for seal
(The O-ring on the upper surface side is the top plate T on the second vacuum preliminary chamber 22 side.
P may be provided on the lower side surface of the stage 41, the seal surface 44 at the upper end of the cylindrical outer peripheral surface of the stage 41, and the second vacuum preliminary chamber 22.
Between the first vacuum preliminary chamber 21 and / or the processing chamber 23 and the second vacuum preliminary chamber 22 in this state.

Further, as is apparent from FIGS. 5 and 6, the stepped portion 3 provided on the inwardly extending claw 36 of the ring-shaped portion 34 constituting the substrate mounting portion 33 of the turntable 30.
In FIG. 7 (see FIG. 4), the substrate P is engaged and mounted when the stage 41 is in the lowered position in FIG. 5, and when the stage 41 is in the raised position shown in FIG. It is mounted and fixed in the above-mentioned circular edge 45 provided on the outer peripheral portion.

Next, the operation of the processing apparatus of the present invention, particularly the operation of the transport system, will be described with reference to FIG.
First, the turntable 30 and each stage 41 are lifted by the respective lifting / lowering means 31, 43, and
Second vacuum preparatory chamber 22, first vacuum preparatory chamber 21, processing chamber 23
Are both isolated by the sealing means.
At this time, the first vacuum preliminary chamber 21 and the second vacuum preliminary chamber 2
2. Each of the processing chambers 23 is in a depressurized state of substantially equal pressure.

Next, the second pre-vacuum chamber 22 is purged with air from the opening H5, and then the first pre-vacuum chamber 21 is also purged with N ₂ from the opening H5. Next, after purging the first vacuum preliminary chamber 21, the upper lid is opened, and the unprocessed substrate P
Are moved from the cassette stages 13 and 14 by the robots 11 and 12 shown in FIG.
1 and 41 are placed and fixed in each circular edge 45 at the upper end surface. In this case, at least the first pre-vacuum chamber 21 is isolated from other chambers, and is naturally transported under atmospheric pressure. Therefore, during the transfer of the substrate in the first vacuum preliminary chamber, the second
Since the pre-vacuum chamber 22 is also at atmospheric pressure, the load on the stage unit can be eliminated.

Subsequently, the inside of the first vacuum preliminary chamber 21 is evacuated from the depressurizing opening H4 to be depressurized to a predetermined pressure, and at the same time, the second vacuum preliminary chamber 22 is also evacuated from the depressurizing opening H6 to be isolated from each other. Each of the chambers thus set is kept at a constant pressure. During this time, various processing steps can be performed while the processing chamber 23 is in an arbitrary reduced pressure state. However, the negative pressure in the processing chamber 23 causes the turntable 30 and the corresponding stage 41 to move to the second vacuum preparatory chamber 22. O on the top plate TP
Since the pressure seal is performed via the ring, the load on the stage unit is extremely small.

Next, while the respective chambers are under a uniform pressure, the stages 41 of the first vacuum preliminary chamber 21 and the processing chamber 23 are lowered by driving the respective stage elevating mechanisms 43, and then the turntable 30 is similarly moved. Then, the table lifting / lowering means 31 is driven to be lowered and brought into the state shown in FIG. After that, the motor M is operated to rotate the turntable 30 by, for example, 180 degrees, so that each of the substrate mounting portions 33 is moved from the state shown in FIG.
However, the positions of the first vacuum preliminary chamber 21 and the processing chamber 23 are switched. Then, after the turntable 30 is raised by the table lifting / lowering means 31 and pressed against the top plate TP of the second vacuum preparatory chamber 22, the respective stages 41 of the first vacuum preparatory chamber 21 and the processing chamber 23 are Similarly, the stage is raised by driving the stage elevating mechanism 43. At this time, in the first vacuum preparatory chamber 21, if a preceding processed substrate is mounted, it is received from the substrate mounting portion 33 and raised, otherwise, in order to receive the next new unprocessed substrate. Can be raised.

In the processing chamber 23, the unprocessed substrate transported by the turntable 30 from the first pre-vacuum chamber 21 is received from the substrate mounting portion 33 and raised. Each of these stages 41 is brought into the state shown in FIG. 6 at the highest position, and cooperates with the O-ring OL which is the sealing means of each substrate mounting portion 33 in the same manner as described above, thereby forming the second stage. The vacuum preparatory chamber 22 is isolated from the first vacuum preparatory chamber 21 and the processing chamber 23 to form independent pressure reducing chambers.

Thereafter, as described above, the first vacuum preliminary chamber 21
With return to normal pressure by purging with N ₂ gas from H3 in, the next, the processed substrates robot 1
Preparations for unloading and receiving a new unprocessed substrate by means of 1 and 12 are made. In this case, the processed substrates are all processed by the robots 11 and 12 in the buffer stage 1 described above.
5 is conveyed.

Further, the substrate processing operations for various are made in the processing chamber 23, after the processing ends, by purging with N ₂ gas from the purge opening H1, after the substrate treatment of the second lock chamber 22 The pressure is adjusted so as to be equal to the pressure, but in any case, the pressure in the processing chamber 23 is separately controlled to an arbitrary reduced pressure necessary for the processing. In the meantime, the purge opening H5 is
And pressurize it to normal pressure,
It is balanced with the first vacuum reserve chamber.

When the turntable is intermittently rotated every 90 degrees as in the other embodiments, the above-described procedures of the pressure reduction and the purge are substantially the same. In this manner, in the transport mode in which the substrate P is rotated by 90 degrees in a certain direction, all the substrates P fixed on the respective substrate mounting portions 33 stay in the same processing chamber 23 for two steps. During this time, it can be used for various purposes such as performing pre-processing and post-processing, or performing two-stage more precise processing.

[0040]

According to the present invention, since the present invention has the above configuration, the first
In addition, the capacity of the second pre-vacuum chamber 22 for accommodating and driving the turntable 30, which is a transport means in a vacuum, can be made extremely small. The decompression of the second pre-vacuum chamber 22, which is inevitably larger than that of the processing chamber 23, can be performed in a short time by a small-capacity vacuum pump. Secondly, since each stage 41 only moves up and down without rotating, it becomes easy to incorporate various heating and cooling mechanisms and the like in the stage 41. For this reason, the first vacuum preliminary chamber, the second vacuum preliminary chamber, and the processing chamber can be individually controlled in temperature, and the stepwise control of the processing substrate temperature becomes extremely easy. Third, since the respective vacuum chambers can be individually defined as described above, it has become possible to greatly reduce the pressure load applied to the stage unit when loading and unloading the substrate. Fourth, the first vacuum preliminary chamber 21 having a relatively small capacity,
Since the processing chambers 23 can be individually pressurized and decompressed, it is possible to prevent a decrease in throughput even when soft vacuum and soft purge are performed. Furthermore, since the drive mechanism such as the table can be made smaller than when the turntable and stage are driven integrally, it is possible to easily cope with the expansion of the stage and the enlargement of the substrate, and by changing the rotation drive system of the turntable. A variety of different treatments can be performed, and the modification of the top plate of the second vacuum preparatory chamber can prevent the deformation by a simple configuration, so that the advantage of the reduced size of the decompression chamber can be fully utilized. Became possible. Furthermore, since the substrate P is conveyed or supported in a stored state in the circular edge at the upper end of the stage 41, various temperature controls during the period are extremely easy.

[Brief description of the drawings]

FIG. 1 is a schematic plan view of a semiconductor processing apparatus according to the present invention.

FIG. 2 is a sectional view taken along line AA of FIG.

FIG. 3 is an enlarged perspective view of a substrate mounting portion.

FIG. 4 is an enlarged perspective view of a part of a substrate mounting portion and a stage unit in FIG. 3;

FIG. 5 is an explanatory diagram of substrate transfer by a stage unit.

FIG. 6 is an explanatory view of substrate transfer by a stage unit.

FIG. 7 is a plan view of a conventionally known semiconductor manufacturing apparatus.

FIG. 8 is a sectional view of FIG. 7;

FIG. 9 is a plan view of a semiconductor manufacturing apparatus previously proposed by the present inventors.

FIG. 10 is a sectional view taken along the line BB of FIG. 9;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Semiconductor processing apparatus 20 Vacuum apparatus part 21 First vacuum preparatory chamber 22 Second vacuum preparatory chamber 23 Processing chamber 30 Turntable 31 Turntable elevating means 33 Substrate mounting part 34 Ring part 36 Claw 37 Step part 40 Stage unit 41 Stage 43 Stage lifting mechanism 45 Stage top circular edge OL seal O-ring B Bellows P Semiconductor substrate TP Second vacuum spare chamber top plate

Claims (8)

[Claims] 1. A semiconductor manufacturing apparatus having a first pre-vacuum chamber, a second pre-vacuum chamber, and a substrate processing chamber, wherein the second pre-vacuum chamber has a rotatable and vertically movable turntable, The turntable has at least four substrate mounting portions, and the second vacuum auxiliary chamber bottom plate at a corresponding position below the first vacuum auxiliary chamber and the substrate processing chamber respectively has the substrate mounting portion of the turntable. A stage unit that can move up and down in correspondence with each of the stages.
The semiconductor substrate is transported into the vacuum preliminary chamber and the processing chamber, respectively.
Conversely, a semiconductor manufacturing apparatus wherein a semiconductor substrate is transported and mounted on the substrate mounting portion. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the turntable is sequentially rotated in the same direction every 90 degrees. 3. The semiconductor manufacturing apparatus according to claim 1, wherein said turntable is rotated forward and backward by 180 degrees. 4. The first vacuum preliminary chamber, the first vacuum preliminary chamber and the second vacuum preliminary chamber by sandwiching a sealing member between a top plate of the second vacuum preliminary chamber and a sealing surface of each stage on both upper and lower surfaces of the substrate mounting section. 4. The semiconductor manufacturing apparatus according to claim 1, wherein a decompression chamber can be defined between the pre-vacuum chamber and the processing chamber. 5. The substrate mounting portion of the turntable has a hole through which an upper portion of each corresponding stage penetrates, and a hole for mounting and locking a processing substrate is provided inside the hole. 5. The semiconductor manufacturing apparatus according to claim 1, comprising a plurality of claws having a step. 6. The semiconductor manufacturing apparatus according to claim 5, wherein a circular recess for mounting and locking a substrate is provided on an upper end surface of each of said stages. 7. The semiconductor manufacturing apparatus according to claim 1, wherein each of said stage units can be additionally provided with a lamp heating mechanism, a water cooling / cooling mechanism, a high frequency applying mechanism, and the like. 8. A top plate constituting the second pre-vacuum chamber,
The semiconductor manufacturing apparatus according to claim 1, wherein the semiconductor manufacturing apparatus has a cross-sectional shape.