JP2000012439A - Method and device for charged beam transfer and manufacture of device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize good joining of a transfer image of a split pattern by dividing a transfer pattern overlapping each other, making a charged beam width coincide with an overlapping pattern width and finishing and starting exposure of each split pattern when an overlapping pattern and a charged pattern coincide with each other by moving a mask and a wafer. SOLUTION: A transfer pattern is divided into split patterns P1, P2 having overlapping patterns CP, CD, respectively. A width BW of electron beam EB in a mask four movement directions is made to coincide with a width CW of the overlapping patterns CP, CD. Scanning exposure is carried out while continuously moving a mask 4 and a wafer 8 and when the overlapping pattern CP of the split pattern P1 and a width BW of electron beam EB coincide with each other, emission of electron beam EB to the mask 4 is stopped. When the overlapping pattern CD of the split pattern P2 and a width BW of electron beam EB coincide with each other, emission of electron beam EB is started.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged beam transfer method and apparatus, and more particularly, to a charged beam transfer method and apparatus for transferring a pattern by a charged beam using a mask for exposure or mask and reticle exposure for manufacturing semiconductor devices. Related to the device.

[0002]

2. Description of the Related Art In the mass production stage of semiconductor memory device production, optical steppers having high productivity have been used. However, in the production of memory devices of 1G and 4GDRAM or later having a line width of 0.2 μm or less, optical steppers are required. As one of the exposure techniques replacing the exposure method, an electron beam exposure method having high resolution and excellent productivity is expected.

Conventional electron beam exposure methods mainly use a single beam Gaussian method and a variable shaping method, and have low productivity. For this reason, mask writing, ultra-LSI R & D, exposure of ASIC devices for small-scale production, etc. It has been used for applications that make use of the characteristics of the excellent resolution performance of electron beams. As described above, in applying the electron beam exposure method to mass production, a major issue was how to improve the productivity.

In a conventional electron beam exposure apparatus, the exposure area of an electron optical system that can be exposed in one shot is extremely smaller than the exposure area of a projection optical system of a light exposure apparatus. Because of this,
Exposure of the entire wafer requires much time since the distance between electronic scanning and mechanical scanning is longer than that of an optical exposure apparatus, and the throughput is extremely poor. As a method of improving the throughput, it is necessary to significantly improve at least one of speeding up the electronic scanning and the mechanical scanning and / or widening the exposure area of one shot.

As one of the methods for solving the problem of improving the throughput while maintaining the required resolution, a circuit pattern to be exposed on a silicon wafer is used as a mask.
A method of transferring a mask pattern onto a wafer by irradiating the wafer with an electron beam having an expanded exposure area has been studied.

[0006] An electron beam mask used in an electron beam exposure apparatus usually has a circuit pattern having a size two to five times larger than a circuit pattern on a silicon wafer, depending on the projection system magnification of the electron beam exposure apparatus. For example, 4Gbit-DRAM1
It is said that the chip circuit pattern needs an area of about 20 mm x 35 mm. The circuit pattern area on the mask for exposing this circuit pattern is 80 mm × 140 mm when the magnification of the projection system is 1/4. Since it is difficult to form a chip pattern of this size in one thin-film window on a mask as shown in FIG. 1A while maintaining sufficient strength and accuracy, FIG. As schematically shown, the chip pattern (transfer pattern) is divided into a plurality of division patterns (M11 to M66), and a reinforcing beam is arranged between each division pattern.

FIG. 2 shows an example of such an electron beam mask.
The results are shown in (a) and (b). In FIG. 2, reference numeral 401 denotes a mask pattern region, 402 denotes a mask substrate, 403 denotes an electron beam transmitting film (low scatterer), 404 denotes an electron beam scatterer (high scatterer), 405 denotes a reinforcing beam, and 406 denotes a mask frame. Show. The structure of this mask is as follows. An electron beam transmitting film (low scatterer) 403 made of 0.15 μm SiN formed on a mask substrate 402 made of a silicon wafer having a thickness of 2 mm, for example, W of 0.02 μm The scatterer 404 is patterned. Since handling such as handling is difficult with the silicon wafer alone, a mask frame 406 used for X-ray exposure is used.
It is fixed to.

FIG. 3 shows an example of an apparatus for transferring a divided pattern mask. In the figure, an electron beam EB emitted from an electron source 1 is focused by a first condenser lens 21 and shaped into an arbitrary rectangular beam by a variable shaping aperture 3. The shaped electron beam is converted into a substantially parallel beam by the second condenser lens 22, and is irradiated on the mask 4. The mask 4 is on the mask stage 5 and is continuously moving (this moving direction is defined as the x direction). The electron beam applied to the mask is reduced and transferred by the first projection lens 61 and the second projection lens 62 to the wafer 8 on the wafer stage 7 that continuously moves in the opposite direction to the mask stage 5.
At that time, the electron beam scattered by the electron beam scatterer is shielded by the scattered electron limiting aperture 9.

The control unit 10 controls the irradiation of the electron beam from the electron source 1, the shape of the variable shaping aperture 3, and the movement of the mask stage 5 and the wafer stage 7.

FIG. 4 shows how a divided chip pattern on a mask is transferred onto a wafer. A group of divided patterns arranged in the direction in which the electron beam is relatively scanned is referred to as a stripe.
1, M12 ... M16. As shown in the drawing, the mask stage 5 and the wafer stage 7 move in the X direction in synchronization with the electron beam having a slit-shaped irradiation area that is stationary during exposure. By one movement in the X direction, the divided pattern of the same stripe is scanned and exposed.
At that time, beams between the divided patterns (s12, s23, s34, s45,
In s56), when the mask stage 5 and the wafer stage 7 move in the X direction in synchronization, sw12, sw23, sw34, sw
The gaps indicated by 45 and sw56 are formed, and the divided patterns of the same stripe are connected and cannot be exposed on the wafer.
Therefore, the mask stage 5 is continuously moved, but the control of the wafer stage 7 is repeatedly stopped and moved according to the beam position on the mask. That is, on a mask on the same stripe, the wafer stage is moved when the beam is on the divided pattern, and the wafer stage is stopped when the beam is on the beam between the divided patterns, and the gaps s12, s23, Except for s34, s45, and s56, a transfer pattern in which divided patterns of the same stripe are connected as shown in FIG.

[0011]

In order to achieve the connection between the divided patterns in the moving direction of the mask stage, the mask stage is continuously moved as in the prior art, but the beam position on the mask is controlled with respect to the control of the wafer stage. The method of repeating stop / movement by virtue of the vibration problem that occurs when the stage is accelerated or decelerated, a decrease in pattern connection accuracy caused by poor mechanical control response, etc. It was deformed and very difficult in practice.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a charged beam particle transfer method / apparatus for improving the connection of transferred images when transferring divided patterns arranged with beams in the scanning exposure direction.

[0013]

According to one aspect of the charged beam transfer method of the present invention for achieving the above object, a transfer pattern is divided into a first division pattern and a second division pattern, and the transfer pattern is divided by a beam. The first divided pattern and the second divided pattern are arranged to form a first object, and the first object is irradiated with a charged beam, and the charged object is irradiated with the first object in the arrangement direction of the first and second divided patterns. A charged beam transfer method for sequentially scanning and exposing the first and second divided patterns on the second object by relatively moving the second object with respect to the charged beam from the first object. In the above, when the transfer pattern is divided, the transfer pattern is divided into the first and second divided patterns each having an overlapping pattern in a peripheral portion, and the overlapping patterns are opposed to each other with the beam interposed therebetween, so that the first object is formed on the first object. Forming the first and second divided patterns, making the width of the charged beam substantially equal to the width of the overlapping pattern in the moving direction of the first object, and exposing the first divided pattern When scanning and exposing the first exposed area on the second object, when the area of the charged beam in the area of the overlap pattern substantially coincides with the area of the charged beam in the continuous movement direction of the first object, Terminating the irradiation of one object, wherein the first exposed area and the second exposed area on the second object to which the second divided pattern is exposed correspond to the exposed area corresponding to the overlapping pattern; Moving the second object with respect to the charged beam from the first object after exposing the first area to be exposed, and scanning and exposing the second area to be exposed. Moving the first object When the area of the charged particle beam in the region of the overlapping patterns are substantially the same in direction, and having a step for starting the irradiation of the first object of the charged beam.

The method further comprises the step of continuously moving the first object and the second object from the start of exposure of the first divided pattern to the end of exposure of the second divided pattern. Setting a step of deflecting the charged beam from the first object in the continuous movement direction of the second object after the exposure of the area to be exposed is completed.

In order to position the second exposed area before the exposure start position of the first exposed area in the continuous moving direction of the second object at the end of the exposure of the first exposed area. And a step of continuously deflecting a charged beam from the first object with respect to the second object in a direction opposite to a continuous direction of the second object during exposure of the first exposed area.

In one embodiment of the charged beam transfer device of the present invention, the transfer pattern is divided into a first divided pattern and a second divided pattern, and the first divided pattern and the second divided pattern are arranged with a beam interposed therebetween. When forming into one object, the first and second divided patterns having an overlapping pattern in the peripheral portion are divided, and the first and second divided patterns are opposed to each other with the overlapping pattern sandwiching the beam therebetween. Forming a two-part pattern, irradiating the first object with a charged beam, moving the first object relative to the charged beam in the arrangement direction of the first and second divided patterns, and moving the first object from the first object. In a charged beam transfer apparatus for sequentially scanning and exposing the first and second divided patterns on the second object by relatively moving the second object with respect to the charged beam, the charged object is transferred to the first object. Irradiation means for irradiating the first object, charged beam shaping means for making a width of the charged beam in the moving direction of the first object on the first object substantially equal to a width of the overlapping pattern, and mounting the first object The first to move
A movable stage, and a second stage on which the second object is placed and moved.
A movable stage, a relative moving means for relatively moving a charged beam from the first object and the second object, and scanning exposure of a first exposed area on the second object on which the first divided pattern is exposed When, when the area of the overlapping pattern substantially coincides with the area of the charged beam in the moving direction of the first movable stage, the irradiation unit stops irradiation of the first object with the charged beam, The first exposed area and the second divided pattern where the second divided pattern is exposed;
After the exposure of the first exposed region by the relative moving means, the first exposed region is overlapped with the second exposed region on the object by the exposed region corresponding to the overlapping pattern.
When the second movable stage is moved with respect to the charged beam from the object and the second exposed region is scanned and exposed, the region of the overlap pattern in the moving direction of the first movable stage is different from the region of the charged beam. And control means for starting irradiation of the charged beam to the first object by the irradiating means when substantially coincident with each other.

The relative moving means includes a deflecting means for deflecting a charged beam from the first object, and the control means controls a period from the start of exposure of the first divided pattern to the end of exposure of the second divided pattern. The first and second movable stages are continuously moved, respectively, and after the first exposed region is exposed, the deflection beam deflects the charged beam from the first object in the continuous movement direction of the second object. It is characterized by the following.

When the exposure of the first exposed area is completed, the control means moves the second exposed area forward in the direction of continuous movement of the second object with respect to the exposure start position of the first exposed area. During the exposure of the first exposed area, the deflecting means causes the charged beam from the first object to be continuous with respect to the second movable stage in a direction opposite to a continuous direction of the second movable stage. Deflected.

[0019]

<Embodiment 1> A method for dividing a transfer pattern into divided patterns will be described with reference to FIGS. 6 and 7. FIG. In order to simplify the description, a case in which two divided patterns are divided will be described.

In FIG. 6, P0 is a transfer pattern having a continuous pattern. Then, when the transfer pattern is divided as shown in the figure, the first divided pattern P1 and the second divided pattern P2 are divided so as to have an overlapping pattern CP in the periphery of each divided pattern. Then, as shown in FIG. 7, the first divided pattern P1,
The second divided pattern P2 is formed with the overlapping patterns CP facing each other with the beam S interposed therebetween.

Next, the case of using the apparatus shown in FIG. 3 for the exposure method of this embodiment will be described with reference to FIG.

When the control unit 10 receives a command to start exposure,
The control unit 10 executes the following steps.

(Step 1) The shape of an electron beam which is a charged beam for irradiating the mask 4 is set by a shaping aperture. At that time, the electron beam EB in the mask movement direction
Is made substantially equal to the width CW of the overlapping pattern.

(Step 2) As shown in FIGS. 7 (a) and 7 (b), the mask 4 is continuously moved at a constant speed in the mask moving direction shown in FIG. Are continuously moved at a constant speed in the illustrated mask moving direction, and the first divided pattern P1 is scanned and exposed. As a result, the first divided pattern P1 is exposed on the first exposed area IP1 on the wafer 8 as the second object. However, when the region of the overlapping pattern of the first divided pattern P1 and the irradiation region of the electron beam EB substantially coincide with each other in the moving direction, by controlling the electron source 1 to stop the irradiation of the electron beam to the mask 4, The dose amount (exposure amount) stored in the exposed region ICP corresponding to the overlapping pattern of the first exposed region IP1 decreases in the direction opposite to the moving direction of the wafer.

(Step 3) When the scanning exposure of the first exposed area IP1 is completed, the first exposed area IP1 and the second divided pattern
Since the second exposed area IP2 on the wafer 8, which is the second object to which P2 is exposed, overlaps by the exposed area ICP corresponding to the overlapping pattern, the electron beam from the mask 4 or a reference corresponding thereto. Move to position.

(Step 4) As in the case of the first divided pattern P1, the mask 4 is continuously moved at a constant speed, and the wafer 8 is continuously moved at a constant speed.
Is scanned and exposed on the second exposed area IP2. However, the area of the overlapping pattern of the second divided pattern P2 and the electron beam E
Until the irradiation areas of B coincide with each other in the moving direction, the irradiation of the electron beam to the mask 4 is stopped, and the electron source 1 is controlled to start the irradiation of the electron beam when the coincidence substantially coincides.
As a result, the dose amount (exposure amount) accumulated in the exposed region ICP corresponding to the overlapping pattern of the second exposed region IP2 decreases in the moving direction of the wafer. Therefore, the dose amount (exposure amount) finally accumulated in the exposed region ICP corresponding to the overlapping pattern is a combination of the dose amount (exposure amount) when the first and second divided patterns are scanned and exposed. No.
1. The dose amount (the same as the exposure amount) accumulated in the region excluding the exposed region corresponding to the overlapping pattern of the second exposed region.

As described above, since the overlapping pattern can be transferred with the optimum exposure amount, the positional relationship between the first and second exposure regions is desired due to the problem of vibration generated when the stage is accelerated and decelerated and the poor mechanical control response. , The continuous pattern straddling the divided pattern can be transferred as a continuous pattern.

<Embodiment 2> FIG. 8 shows an example of an apparatus for transferring a divided pattern mask of Embodiment 2. 3, the same components as those in FIG. 3 are denoted by the same reference numerals, and the description thereof will be omitted.

The blanker BL deflects the electron beam EB from the electron source 1 and cuts off the deflected electron beam with a blanking aperture BA. That is, the blanker BL and the blanking aperture BA control the stop and start of the electron beam irradiated to the mask 4. The deflector d has a mask 4
This is a deflector that deflects the electron beam from.

Next, the exposure method of this embodiment will be described with reference to FIG. When the control unit 10 receives a command to start exposure, the control unit 10 executes the following steps.

(Step 11) The shape of the electron beam which is a charged beam for irradiating the mask 4 is set by a shaping aperture. At this time, the electron beam in the mask movement direction
The width EW of the EB is made substantially equal to the width CW of the overlapping pattern.

(Step 12) As shown in FIG. 7 (a), the mask 4 is continuously moved at a constant speed in the mask moving direction M by the mask stage 5 with respect to the stationary electron beam EB. The wafer stage 7 continuously moves the wafer 8 in the illustrated wafer moving direction W at a constant speed, and further deflects the electron beam from the mask 4 by the deflector D at a constant speed in the direction d1 opposite to the wafer moving direction W. The first divided pattern P1 is scanned and exposed. At this time, when the area CP of the overlapping pattern of the first divided pattern P1 and the irradiation area of the electron beam EB substantially coincide with each other in the moving direction, the blanker BL is operated to stop the irradiation of the electron beam to the mask 4. The scanning exposure of the one division pattern is completed. As a result, the first divided pattern P1 is exposed on the first exposed area IP1 on the wafer 8. When the scanning exposure of the first divided pattern is completed, the second divided pattern P2 is scanned and exposed on the wafer 8 with respect to the exposure start position (FIG. 9A) of the first exposed area IP1. The position of the exposure area IP2 (FIG. 9 (b)) is located on the front side in the moving direction W of the wafer 8. Further, similarly to the first embodiment, the first exposed area IP
The dose (exposure amount) accumulated in the exposed region ICP corresponding to one overlap pattern decreases in the direction opposite to the moving direction W of the wafer 8.

(Step 13) When the scanning exposure of the first exposed area IP1 is completed, the first exposed area IP1 and the second exposed area on the wafer 8 which is the second object to be exposed with the second divided pattern P2 are exposed. IP2 is the exposure area ICP corresponding to the overlapping pattern
In order to overlap each other, the deflector D is set to deflect the electron beam from the mask 4 in the moving direction W of the wafer 8.

(Step 14) Even after the end of the scanning exposure of the first exposure area IP1, the mask stage 5 and the wafer stage 7 are continuously moved at the same constant speed as in step 11. When the region of the overlapping pattern of the second divided pattern P2 and the irradiation region of the electron beam EB coincide with each other in the moving direction, the blanker BL is started to start the irradiation of the electron beam.
Is stopped, the exposure area ICP corresponding to the overlapping pattern of the second exposure area IP2 is located on the area irradiated with the electron beam from the mask 4. Then, the second exposed area I
P2 is scanned and exposed, and the exposure of the second exposed area IP2 ends. At this time, as in the first embodiment, the second exposed area IP2
The dose amount (exposure amount) accumulated in the exposed region ICP corresponding to the overlapping pattern of (1) decreases in the moving direction of the wafer. Therefore, the exposure area ICP corresponding to the overlapping pattern
The dose amount (exposure amount) that is finally accumulated in the first and second divided patterns is a combination of the dose amount (exposure amount) when the first and second divided patterns are scanned and exposed. The dose amount (the same as the exposure amount) accumulated in the region excluding the exposed region corresponding to

Here, when the region of the overlapping pattern of the second divided pattern P2 and the irradiation region of the electron beam EB coincide with each other in the moving direction, the second exposure region IP2 is placed on the irradiation region of the electron beam from the mask 4. In order to locate the exposure area ICP corresponding to the overlapping pattern, the continuous deflection speed Vd (mm / s) of the deflector D and the continuous movement speed Vw (mm / s) of the wafer stage in step 12 are calculated by the following equations. Has been determined.

Vd = (S + B) / (P + S) * Vm * M Vw = (PB) / (P + S) * Vm * M where Vm: continuous moving speed of the mask stage (mm / s) ,
P: width of the divided pattern in the continuous movement direction (mm), B: width of the electron beam in the continuous movement direction [on the mask] (mm), S: width of the beam in the continuous direction (mm), M: pattern on the mask Magnification when projecting an image onto a wafer

As described above, in the second embodiment, when scanning and exposing a stripe composed of a plurality of divided patterns, scanning exposure can be performed while continuously moving the mask stage and the wafer stage without stopping and accelerating. An overlapping pattern with a small amount of exposure and small distortion can be transferred, and a continuous pattern straddling the divided pattern can be transferred as a more accurate continuous pattern.

<Embodiment 3> An embodiment of a device production method using the above-described charged beam transfer apparatus will be described. FIG. 10 shows a flow of manufacturing micro devices (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin-film magnetic heads, micromachines, etc.). In step 1 (circuit design), the circuit of the semiconductor device is designed. Step 2 (mask fabrication) forms a mask on which the designed circuit pattern is formed. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 11 shows a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. Step 1
In 5 (resist processing), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern is printed on the wafer by exposure using the above-described exposure apparatus. Step 17
In (development), the exposed wafer is developed. Step 18
In (etching), portions other than the developed resist image are scraped off. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of this embodiment, a highly integrated semiconductor device, which has conventionally been difficult to manufacture, can be manufactured at low cost.

[0041]

As described above, according to the present invention, the overlapping pattern can be transferred with the optimal exposure amount. Therefore, the first problem is caused by the vibration problem that occurs when the stage is accelerated and decelerated and the poor mechanical control response. Even if the positional relationship of the second exposure region deviates from a desired positional relationship, a continuous pattern straddling the divided pattern can be transferred as a continuous pattern. Further, when scanning and exposing a stripe composed of a plurality of divided patterns,
Scanning exposure can be performed while continuously moving the mask stage and wafer stage without stopping and accelerating, so that an overlapping pattern with an optimal exposure amount and small distortion can be transferred. Can be transferred as

[Brief description of the drawings]

FIG. 1 is a view showing a division pattern mask;

FIG. 2 illustrates a mask structure.

FIG. 3 is a diagram illustrating a conventional charged beam transfer device.

FIG. 4 is a diagram illustrating a transfer method using a division pattern mask.

FIG. 5 is a diagram showing a transfer result.

FIG. 6 is a view for explaining a transfer pattern dividing method according to the present invention.

FIG. 7 is a view for explaining a transfer method using a divided pattern mask according to the first embodiment.

FIG. 8 is a diagram illustrating a charged beam transfer device according to a second embodiment.

FIG. 9 is a diagram illustrating a transfer method using a divided pattern mask according to a second embodiment.

FIG. 10 is a diagram illustrating a flow of manufacturing a micro device.

FIG. 11 illustrates a wafer process.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 electron source 21 first condenser lens 22 second condenser lens 3 variable shaping aperture 4 mask 5 mask stage 61 first projection lens 62 second projection lens 7 wafer stage 8 wafer 9 scattered electron limiting aperture

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Keisei Yui 3-30-2 Shimomaruko, Ota-ku, Tokyo F-term (reference) in Canon Inc. 5F056 AA20 AA22 AA27 CA05 CB21 CC09 CD06 FA03 FA05

Claims (7)

[Claims] The transfer pattern is divided into a first divided pattern and a second divided pattern.
Dividing into a division pattern, forming the first object by arranging the first and second division patterns with a beam interposed therebetween,
Irradiating the first object with a charged beam, moving the first object relative to the charged beam in the direction in which the first and second divided patterns are arranged, and applying a second beam to the charged beam from the first object. By moving the object relatively,
In the charged beam transfer method for sequentially scanning and exposing the first and second divided patterns on the second object, when the transfer pattern is divided, the transfer pattern is divided into the first and second divided patterns having an overlapping pattern in a peripheral portion. Forming the first and second divided patterns on the first object by making the overlapping patterns face each other with the beam interposed therebetween; and in the moving direction of the first object, changing the width of the charged beam to Making the width substantially equal to the width of the overlapping pattern; and, when scanning and exposing a first exposed area on the second object on which the first divided pattern is exposed, the overlapping pattern in the continuous movement direction of the first object. Ending irradiation of the first object with the charged beam when the area of the charged beam substantially coincides with the area of the charged beam; and exposing the first exposed area and the second divided pattern. Since the second exposed area on the two objects overlaps by the exposed area corresponding to the overlapping pattern, after exposing the first exposed area, the charged beam from the first object is A moving step of moving a second object; and, when scanning and exposing the second exposed area, when the area of the charged beam in the area of the overlap pattern substantially coincides with the area of the charged beam in the moving direction of the first object, Starting irradiating the first object with a beam. 2. The method according to claim 1, further comprising the step of continuously moving the first object and the second object from the start of the exposure of the first divided pattern to the end of the exposure of the second divided pattern. Setting a step of deflecting a charged beam from the first object in a continuous movement direction of the second object after the exposure of the first exposed area is completed. 3. When the exposure of the first exposed area is completed, the second exposed area is positioned before the exposure start position of the first exposed area in the continuous moving direction of the second object. During the exposure of the first exposed area, the first
3. The charged beam transfer method according to claim 1, further comprising the step of continuously deflecting a charged beam from an object with respect to the second object in a direction opposite to a continuous direction of the second object. 4. A device manufacturing method, wherein a device is manufactured by a manufacturing process including a step of performing pattern exposure using the charged beam transfer method according to claim 1. 5. A transfer pattern comprising a first divided pattern and a second divided pattern.
When the first object is divided into divided patterns and the first divided pattern and the second divided pattern are arranged with a beam therebetween to form a first object, the first object is divided into the first and second divided patterns having an overlapping pattern in a peripheral portion. Forming the first and second divided patterns on the first object with the overlapping patterns facing each other across the beam, and irradiating the first object with a charged beam;
The first object is relatively moved with respect to the charged beam in the arrangement direction of the first and second divided patterns, and the second object is relatively moved with respect to the charged beam from the first object. A charged beam transfer device that sequentially scans and exposes a second divided pattern onto the second object; irradiating means for irradiating the first object with the charged beam; and Charged beam shaping means for making the width on the first object substantially equal to the width of the overlapping pattern; a first movable stage for mounting and moving the first object; and a moving and mounting the second object A second movable stage, a relative moving unit that relatively moves the charged beam from the first object and the second object, and a first exposure area on the second object where the first divided pattern is exposed. During scanning exposure, when the area of the overlapping pattern substantially coincides with the area of the charged beam in the moving direction of the first movable stage, the irradiation unit stops irradiation of the first object with the charged beam. The first exposed area and the second exposed area on the second object on which the second divided pattern is exposed overlap by the exposed area corresponding to the overlapping pattern. After the exposure of the first exposed area by the moving means, the second movable stage is moved with respect to the charged beam from the first object to scan and expose the second exposed area. When the charged beam area of the overlapping pattern area substantially coincides with the charged beam area in the moving direction of the stage, the control means causes the irradiation means to start irradiating the charged object with the first object. Charged beam transfer apparatus characterized by having and. 6. The relative moving means has a deflecting means for deflecting a charged beam from the first object, and the control means is configured to start exposure of the first divided pattern and end exposure of the second divided pattern. Until the first and second movable stages are continuously moved, and after the first exposed area has been exposed, the deflecting means causes the charged beam from the first object to move in the continuous moving direction of the second object. 6. The charged beam transfer device according to claim 5, wherein the beam is deflected. 7. The control device according to claim 1, wherein, when the exposure of the first exposed region is completed, the control unit moves the second exposed region toward a continuous movement direction of the second object with respect to an exposure start position of the first exposed region. During the exposure of the first exposed area, the deflecting unit causes the charged beam from the first object to be directed to the second movable stage in a direction opposite to a continuous direction of the second movable stage. 7. The charged beam transfer device according to claim 6, wherein the beam is continuously deflected.