JP2000001330A - Circuit board material - Google Patents
Circuit board materialInfo
- Publication number
- JP2000001330A JP2000001330A JP10395299A JP10395299A JP2000001330A JP 2000001330 A JP2000001330 A JP 2000001330A JP 10395299 A JP10395299 A JP 10395299A JP 10395299 A JP10395299 A JP 10395299A JP 2000001330 A JP2000001330 A JP 2000001330A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- weight
- board material
- wiring board
- thermal expansion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は配線基板材料に関
し、さらに詳しくは、平坦性、平滑性、電気絶縁性、加
工性および化学的耐久性に優れると共に、適切な熱膨張
係数を有し、半導体実装用配線基板などに有用な配線基
板材料に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board material, and more particularly, to a semiconductor material having excellent flatness, smoothness, electrical insulation, workability, and chemical durability, having an appropriate coefficient of thermal expansion, The present invention relates to a wiring board material useful for a mounting wiring board and the like.
【０００２】[0002]
【従来の技術】ＩＣやＬＳＩなどの半導体チップを搭載
する半導体実装用基板としては、種々のものが提案さ
れ、実用化されており、例えばガラス−エポキシ樹脂プ
リント基板で代表される樹脂基板やセラミックス基板な
どが実用化されている。近年、実装されるＩＣチップの
高密度化、高速化に伴い、基板材料に対する要求も厳し
くなってきており、特に基板の平坦性、平滑性に対する
要求が高い。基板表面の凹凸が大きいと狭ピッチの配線
を均質に施せない上、ＩＣチップを実装する際に突起が
邪魔してチップが全面でボンディングできないなどの問
題が生じる。これはフリップチップパッケージにとって
致命的な欠陥となる。2. Description of the Related Art Various types of semiconductor mounting boards for mounting semiconductor chips such as ICs and LSIs have been proposed and put into practical use, for example, resin boards represented by glass-epoxy resin printed boards and ceramics boards. Substrates have been put to practical use. In recent years, as IC chips to be mounted have been increased in density and speed, requirements for substrate materials have also become strict, and in particular, requirements for flatness and smoothness of substrates have been high. If the unevenness of the substrate surface is large, wirings with a narrow pitch cannot be uniformly provided, and when mounting an IC chip, there are problems that the protrusion hinders the entire chip from being bonded. This is a fatal defect for flip chip packages.
【０００３】図１は、マザーボードに載置されているＩ
Ｃチップ実装基板の１例の正面図である。この図１で示
すように、マザーボード１上に配線が形成された基板
（配線基板）２が載置され、はんだバンプ４によって固
定されている。そして、配線基板２に設けられた配線と
ＩＣチップ３とがはんだバンプ４によって接続され、Ｉ
Ｃチップ３が実装される。なお、５は配線形成部であ
る。[0003] FIG. 1 shows an I-mounting device mounted on a motherboard.
It is a front view of an example of a C chip mounting board. As shown in FIG. 1, a substrate (wiring substrate) 2 on which wiring is formed is placed on a motherboard 1 and fixed by solder bumps 4. Then, the wiring provided on the wiring board 2 and the IC chip 3 are connected by the solder bumps 4,
The C chip 3 is mounted. Reference numeral 5 denotes a wiring forming portion.
【０００４】前記セラミックス基板は、面粗度や反りが
大きく、使用上の制約が大きい上、研磨するにはコスト
がかかりすぎ、さらに熱膨張特性の整合性も重要な問題
である。一方、一般的に使用されるガラス−エポキシ樹
脂プリント基板は、熱膨張係数が１５０〜１６０×１０
-7／℃程度であリ、この基板に熱膨張係数約３４×１０
-7／℃のシリコン結晶からなるＩＣチップを実装しよう
としても、実装後チップに歪みが残留したり、ボンディ
ング部に亀裂が入ったり、さらにはＩＣチップが破壊さ
れたり、ボンディングが外れて接続不良を引き起こすな
ど、好ましくない事態を招来するおそれがある。したが
って、半導体を実装した後マザーボードにはんだ付けさ
れる配線基板は、半導体とマザーボードの熱膨張特性の
差を緩和する役目をもたせるため、シリコン結晶とガラ
ス−エポキシ樹脂基板の中間の熱膨張係数、すなわち７
０〜１００×１０-7／℃程度の熱膨張係数をもつ材料か
らなるものが好ましい。[0004] The ceramic substrate has a large surface roughness and a large warp, has a large restriction in use, is too expensive to polish, and has an important problem of matching thermal expansion characteristics. On the other hand, a commonly used glass-epoxy resin printed circuit board has a coefficient of thermal expansion of 150 to 160 × 10
-7 / ° C. of about Ali, thermal expansion coefficient of about 34 × 10 on the substrate
Even if you try to mount an IC chip made of silicon crystal at -7 / ° C, after mounting, distortion remains in the chip, cracks are formed in the bonding part, furthermore, the IC chip is broken, or bonding is disconnected and connection is poor. May cause undesired situations. Therefore, the wiring board soldered to the motherboard after mounting the semiconductor, in order to serve to reduce the difference in thermal expansion characteristics between the semiconductor and the motherboard, the thermal expansion coefficient between the silicon crystal and the glass-epoxy resin substrate, that is, 7
Those made of a material having a thermal expansion coefficient of about 0 to 100 × 10 −7 / ° C. are preferable.
【０００５】[0005]
【発明が解決しようとする課題】本発明は、このような
事情のもとで、平坦性、平滑性、電気絶縁性、加工性お
よび化学的耐久性に優れると共に、適切な熱膨張係数を
有し、半導体実装用配線基板などに有用な配線基板材料
を提供することを目的とするものである。Under such circumstances, the present invention is excellent in flatness, smoothness, electrical insulation, workability and chemical durability, and has an appropriate coefficient of thermal expansion. It is another object of the present invention to provide a wiring board material useful for a wiring board for mounting a semiconductor.
【０００６】[0006]
【課題を解決するための手段】本発明者は、前記の好ま
しい性質を有する配線基板材料を開発すべく鋭意研究を
重ねた結果、特定の組成を有するガラスからなる配線基
板材料が、その目的に適合しうることを見出し、この知
見に基づいて本発明を完成するに至った。The inventor of the present invention has conducted intensive studies to develop a wiring board material having the above-mentioned preferable properties, and as a result, a wiring board material made of glass having a specific composition has been developed. They have found that they can be adapted, and based on this finding, have completed the present invention.
【０００７】すなわち、本発明は、重量％で、ＳｉＯ2
３０〜５０％、Ｂ2Ｏ3 １〜１０％、Ａｌ2Ｏ3 １〜
１０％、ＢａＯ ２０〜５０％、ＳｒＯ ０〜２０％、
ＭｇＯ ０〜５％およびＣａＯ ０〜１５％を含有し、
かつアルカリ成分を含まないガラスからなる配線基板材
料、および、さらに他の成分として、ＺｎＯ、Ｔｉ
Ｏ2、ＺｒＯ2、Ｎｂ2Ｏ5、Ｓｂ2Ｏ3、ＳｎＯ2、Ｌａ2Ｏ
3、Ｂｉ2Ｏ3、Ｙ2Ｏ3およびＦの中から選ばれる少なく
とも１種を含有し、かつアルカリ成分を含まないガラス
からなる配線基板材料を提供するものである。[0007] That is, the present invention provides a method for preparing SiO 2 by weight%.
30~50%, B 2 O 3 1~10 %, Al 2 O 3 1~
10%, BaO 20-50%, SrO 0-20%,
Containing 0-5% MgO and 0-15% CaO,
And a wiring board material made of glass containing no alkali component, and further, ZnO, Ti
O 2 , ZrO 2 , Nb 2 O 5 , Sb 2 O 3 , SnO 2 , La 2 O
3, Bi 2 O 3, containing Y 2 O 3 and at least one member selected from the group consisting of F, and is intended to provide a wiring board material made of glass containing no alkaline component.
【０００８】[0008]
【発明の実施の形態】本発明の配線基板材料に用いられ
るガラスは、シリコン結晶とガラス−エポキシ樹脂基板
の中間の熱膨張特性を持つ無アルカリガラスである。シ
リコン結晶とガラス−エポキシ樹脂基板の中間の熱膨張
特性をもつガラスは、７０〜１００×１０-7／℃程度の
熱膨張係数を有するものであって、このようなガラスと
しては、ソーダライムガラスに代表されるようなアルカ
リを含むガラスが一般的である。しかしながら、アルカ
リ成分を含んでいるとガラス基板からアルカリ成分が溶
出して半導体チップに損傷を与えるおそれがある。した
がって、本発明の配線基板材料には、無アルカリガラス
が用いられ、しかも該ガラスは、転移点が高く、配線基
板の製造プロセスにおけるメッキ、蒸着、スパッタリン
グ、はんだ付けなどの高温処理で変形しにくいものが要
求される。DESCRIPTION OF THE PREFERRED EMBODIMENTS The glass used for the wiring board material of the present invention is an alkali-free glass having a thermal expansion characteristic intermediate between that of a silicon crystal and a glass-epoxy resin substrate. A glass having a thermal expansion characteristic intermediate between that of a silicon crystal and a glass-epoxy resin substrate has a thermal expansion coefficient of about 70 to 100 × 10 −7 / ° C., and such glass is soda lime glass. A glass containing an alkali represented by the general formula (1) is generally used. However, when an alkali component is contained, the alkali component may elute from the glass substrate and damage the semiconductor chip. Therefore, an alkali-free glass is used for the wiring board material of the present invention, and the glass has a high transition point and is not easily deformed by high-temperature treatment such as plating, vapor deposition, sputtering, and soldering in a wiring board manufacturing process. Things are required.
【０００９】ところが、無アルカリガラスは、一般的
に、薄膜トランジスタ（ＴＦＴ）液晶ディスプレイパネ
ル用ガラスに代表されるように低熱膨張であることが知
られており、その上アルカリ成分は溶融温度を下げた
り、液相温度を下げる効果があるため、ガラスの溶融を
容易にする成分でもある。However, alkali-free glass is generally known to have a low thermal expansion as typified by glass for a thin film transistor (TFT) liquid crystal display panel. Also, since it has the effect of lowering the liquidus temperature, it is also a component that facilitates melting of glass.
【００１０】本発明で用いるガラスは、高熱膨張係数お
よび高転移点を有し、しかも溶融が容易な無アルカリガ
ラスである。本発明で用いるガラスにおいては、ＳｉＯ
2はガラスの骨格をなすための必須成分である。そのた
めＳｉＯ2が３０重量％未満になるとガラスの液相温度
が上昇する。またＳｉＯ2が５０重量％を超えると熱膨
張係数が小さくなる。したがって、ＳｉＯ2の含有量は
３０〜５０重量％に限定される。好ましいＳｉＯ2の含
有量は３０〜４５重量％であり、さらに好ましい含有量
は３５〜４０重量％である。The glass used in the present invention is a non-alkali glass which has a high coefficient of thermal expansion and a high transition point and is easily melted. In the glass used in the present invention, SiO 2
2 is an essential component for forming a glass skeleton. Therefore, when the content of SiO 2 is less than 30% by weight, the liquidus temperature of the glass increases. When the content of SiO 2 exceeds 50% by weight, the coefficient of thermal expansion decreases. Therefore, the content of SiO 2 is limited to 30 to 50% by weight. The preferred content of SiO 2 is 30 to 45% by weight, and the more preferred content is 35 to 40% by weight.
【００１１】Ｂ2Ｏ3は珪酸塩ガラスに添加することによ
り液相温度を下げる効果がある必須成分である。そのた
めＢ2Ｏ3が１重量％未満になると液相温度が上昇し、ガ
ラス化しにくくなる。また１０重量％を超えると熱膨張
係数が小さくなる。したがって、Ｂ2Ｏ3の含有量は１〜
１０重量％に限定される。好ましいＢ2Ｏ3の含有量は１
〜５重量％の範囲である。B 2 O 3 is an essential component that has the effect of lowering the liquidus temperature when added to silicate glass. Therefore, when the content of B 2 O 3 is less than 1% by weight, the liquidus temperature rises and vitrification becomes difficult. If it exceeds 10% by weight, the coefficient of thermal expansion becomes small. Therefore, the content of B 2 O 3 is 1 to
Limited to 10% by weight. The preferred B 2 O 3 content is 1
-5% by weight.
【００１２】Ａｌ2Ｏ3はガラスの化学的耐久性を向上さ
せる効果と、液相温度を下げる効果を有し、本発明には
欠かせない成分である。そのためＡｌ2Ｏ3が１重量％未
満になると化学的耐久性が悪化し、液相温度が上昇す
る。また１０重量％を超えると、熱膨張係数が小さくな
る。したがってＡｌ2Ｏ3の含有量は１〜１０重量％に限
定される。好ましいＡｌ2Ｏ3の含有量は１〜７重量％で
あり、さらに好ましい含有量は１〜５重量％である。Al 2 O 3 has an effect of improving the chemical durability of glass and an effect of lowering the liquidus temperature, and is an essential component for the present invention. Therefore, when the content of Al 2 O 3 is less than 1% by weight, the chemical durability deteriorates and the liquidus temperature rises. If it exceeds 10% by weight, the coefficient of thermal expansion becomes small. Therefore, the content of Al 2 O 3 is limited to 1 to 10% by weight. The preferred content of Al 2 O 3 is 1 to 7% by weight, and the more preferred content is 1 to 5% by weight.
【００１３】ＢａＯは適量添加によりガラスの液相温度
を下げる効果を有し、本発明には欠かせない成分であ
る。ＢａＯが２０重量％未満または５０重量％を超える
場合は液相温度が上昇する。したがって、ＢａＯの含有
量は２０〜５０重量％に限定される。好ましいＢａＯの
含有量は２２〜３５重量％であり、さらに好ましい含有
量は２５〜３５重量％である。BaO has the effect of lowering the liquidus temperature of glass when added in an appropriate amount, and is an essential component for the present invention. When the content of BaO is less than 20% by weight or more than 50% by weight, the liquidus temperature rises. Therefore, the content of BaO is limited to 20 to 50% by weight. A preferred content of BaO is 22 to 35% by weight, and a more preferred content is 25 to 35% by weight.
【００１４】ＳｒＯは適量添加によりガラスの液相温度
を下げる効果を有する任意成分である。ＳｒＯが２０重
量％を超えた場合は液相温度が上昇する。したがって、
ＳｒＯの含有量は０〜２０重量％に限定される。好まし
いＳｒＯの含有量は１〜１７重量％であり、さらに好ま
しい含有量は１〜１０重量％である。SrO is an optional component having the effect of lowering the liquidus temperature of glass by adding an appropriate amount. When SrO exceeds 20% by weight, the liquidus temperature rises. Therefore,
The content of SrO is limited to 0 to 20% by weight. The preferred SrO content is 1 to 17% by weight, and the more preferred content is 1 to 10% by weight.
【００１５】ＭｇＯ、ＣａＯは適量添加によりガラスの
液相温度を下げ熱膨張係数を下げる効果を有し、本発明
において任意の添加成分である。ＭｇＯが５重量％を、
ＣａＯが１５重量％を超えると液相温度が上昇する。し
たがって、ＭｇＯの含有量は０〜５重量％、ＣａＯの含
有量は０〜１５重量％に限定される。好ましいＣａＯの
含有量は１〜１４重量％であり、さらに好ましい含有量
は１〜１０重量％である。MgO and CaO have the effect of lowering the liquidus temperature of the glass and lowering the coefficient of thermal expansion when added in appropriate amounts, and are optional components in the present invention. MgO is 5% by weight,
When the content of CaO exceeds 15% by weight, the liquidus temperature rises. Therefore, the content of MgO is limited to 0 to 5% by weight, and the content of CaO is limited to 0 to 15% by weight. A preferable content of CaO is 1 to 14% by weight, and a more preferable content is 1 to 10% by weight.
【００１６】本発明で用いるガラスにおいては、さらに
他の成分として、ＺｎＯ、ＴｉＯ2、ＺｒＯ2、Ｎｂ
2Ｏ5、Ｓｂ2Ｏ3、ＳｎＯ2、Ｌａ2Ｏ3、Ｂｉ2Ｏ3、Ｙ2Ｏ
3、Ｐ2Ｏ5およびＦの中から選ばれる少なくとも１種
を、液相温度の低下、化学的耐久性の向上、清澄、熱膨
張係数の調整などのために、本発明の目的が損なわれな
い範囲で添加してもよい。これらの成分の中で、特にＺ
ｎＯ、ＴｉＯ2、ＺｒＯ2、Ｌａ2Ｏ3が好適である。In the glass used in the present invention, ZnO, TiO 2 , ZrO 2 , Nb
2 O 5 , Sb 2 O 3 , SnO 2 , La 2 O 3 , Bi 2 O 3 , Y 2 O
3 , at least one selected from P 2 O 5 and F is used to lower the liquidus temperature, improve the chemical durability, clarify, adjust the coefficient of thermal expansion, etc. You may add in the range which does not exist. Among these components, especially Z
nO, TiO 2 , ZrO 2 , La 2 O 3 are preferred.
【００１７】ＺｎＯは、液相温度を下げ、化学的耐久性
を向上させる成分であり、任意に添加することができ
る。しかし、ＺｎＯが１５重量％を超えると熱膨張係数
が低くなりすぎる。したがって、ＺｎＯの含有量は０〜
１５重量％に限定される。ZnO is a component for lowering the liquidus temperature and improving the chemical durability, and can be arbitrarily added. However, when ZnO exceeds 15% by weight, the coefficient of thermal expansion becomes too low. Therefore, the content of ZnO is 0 to
Limited to 15% by weight.
【００１８】ＴｉＯ2、ＺｒＯ2は、化学的耐久性を向上
させる効果を有し、任意に添加することができる。しか
し、ＴｉＯ2またはＺｒＯ2の含有量が１０重量％を超え
ると耐失透性が悪化する。したがってＴｉＯ2、ＺｒＯ2
の含有量は、それぞれ０〜１０重量％に限定される。好
ましいＴｉＯ2、ＺｒＯ2の含有量は、それぞれ０〜７重
量％である。また、ＴｉＯ2とＺｒＯ2の合計含有量が１
重量％未満では化学的耐久性の向上効果が十分に発揮さ
れないし、７重量％を超えると失透しやすくなる。した
がって、ＴｉＯ2とＺｒＯ2の合計含有量は１〜７重量％
が好ましい。TiO 2 and ZrO 2 have the effect of improving the chemical durability and can be arbitrarily added. However, if the content of TiO 2 or ZrO 2 exceeds 10% by weight, the devitrification resistance deteriorates. Therefore, TiO 2 , ZrO 2
Is limited to 0 to 10% by weight, respectively. The preferred contents of TiO 2 and ZrO 2 are each 0 to 7% by weight. Further, when the total content of TiO 2 and ZrO 2 is 1
If it is less than 7% by weight, the effect of improving chemical durability is not sufficiently exhibited, and if it exceeds 7% by weight, devitrification tends to occur. Therefore, the total content of TiO 2 and ZrO 2 is 1 to 7% by weight.
Is preferred.
【００１９】Ｌａ2Ｏ3は液相温度を下げる効果を有し、
任意に添加することができる。しかし、Ｌａ2Ｏ3の含有
量が１０重量％を超えると逆に液相温度が上昇する。し
たがって、Ｌａ2Ｏ3の含有量は０〜１０重量％に限定さ
れる。好ましいＬａ2Ｏ3の含有量は１〜７重量％であ
る。La 2 O 3 has the effect of lowering the liquidus temperature,
It can be arbitrarily added. However, when the content of La 2 O 3 exceeds 10% by weight, the liquidus temperature rises conversely. Therefore, the content of La 2 O 3 is limited to 0 to 10% by weight. The preferred La 2 O 3 content is 1 to 7% by weight.
【００２０】以上説明したように、本発明で用いるガラ
スの好ましいものは、重量％で、ＳｉＯ2 ３０〜４５
％、Ｂ2Ｏ3 １〜１０％、Ａｌ2Ｏ3 １〜７％、ＢａＯ
２２〜３５％、ＳｒＯ １〜１７％、ＭｇＯ ０〜５
％、ＣａＯ １〜１４％、ＺｎＯ ０〜１５％、ＴｉＯ
2 ０〜１０％、ＺｒＯ2 ０〜１０％およびＬａ2Ｏ3０
〜１０％を含有する無アルカリガラスであり、さらに好
ましいものは、重量％で、ＳｉＯ2 ３５〜４０％、Ｂ2
Ｏ3 １〜５％、Ａｌ2Ｏ3 １〜５％、ＢａＯ ２５〜
３５％、ＳｒＯ １〜１０％、ＭｇＯ ０〜５％、Ｃａ
Ｏ １〜１０％、ＺｎＯ ０〜１５％、ＴｉＯ2 ０〜
７％、ＺｒＯ2 ０〜７％およびＬａ2Ｏ3 １〜７％を
含有し、かつＴｉＯ2とＺｒＯ2の合計含有量が１〜７％
の無アルカリガラスである。As described above, the preferred glass used in the present invention is SiO 2 30 to 45% by weight.
%, B 2 O 3 1~10% , Al 2 O 3 1~7%, BaO
22-35%, SrO 1-17%, MgO 0-5
%, CaO 1-14%, ZnO 0-15%, TiO
2 0~10%, ZrO 2 0~10% and La 2 O 3 0
Alkali-free glass containing 10% to 10%, and more preferably 35% to 40% SiO 2 , B 2
O 3 1-5%, Al 2 O 3 1-5%, BaO 25-
35%, SrO 1-10%, MgO 0-5%, Ca
O 1-10%, ZnO 0-15%, TiO 2 0
7%, ZrO 2 0-7% and La 2 O 3 1-7%, and the total content of TiO 2 and ZrO 2 is 1-7%
Is a non-alkali glass.
【００２１】このような組成のガラスからなる配線基板
材料は、平坦性、平滑性、電気絶縁性、化学的耐久性に
優れ、かつ溶融温度が低くて加工性も良好である上、７
０〜１００×１０-7／℃程度の熱膨張係数を有してい
る。本発明の配線基板材料となるガラスの作製方法とし
ては特に制限はなく、従来慣用されている方法を用いる
ことができる。例えば、ガラス原料として水酸化物、炭
酸塩、硝酸塩、酸化物、硫化物、塩化物などを適宜用
い、所望の組成になるように秤量し、混合して調合原料
とする。これを耐熱坩堝に入れ１２００〜１５００℃程
度の温度で溶融し、攪拌、清澄した後、所望形状の鋳型
に流し込み、徐冷することにより、均質なガラスが得ら
れる。The wiring board material made of glass having such a composition is excellent in flatness, smoothness, electric insulation, chemical durability, low melting temperature and good workability.
It has a coefficient of thermal expansion of about 0 to 100 × 10 −7 / ° C. There is no particular limitation on the method for producing glass used as the wiring board material of the present invention, and a conventionally used method can be used. For example, hydroxides, carbonates, nitrates, oxides, sulfides, chlorides, and the like are appropriately used as glass raw materials, weighed so as to have a desired composition, and mixed to obtain a mixed raw material. This is put in a heat-resistant crucible, melted at a temperature of about 1200 to 1500 ° C., stirred, clarified, poured into a mold having a desired shape, and gradually cooled to obtain a homogeneous glass.
【００２２】ガラス加工方法も特に制限はなく、従来慣
用されている方法を用いることができる。例えば、得ら
れたガラスブロックをスライスして薄板状にした後、両
面をラッピングまたはポリシングすることによって平坦
性に優れた基板を作製することができる。この基板にメ
ッキ、蒸着、スパッタリング、エッチング、フォトリソ
グラフィーなどの手法を用いて配線を形成することによ
り半導体実装用の配線基板となる。またガラス基板にエ
ッチング、サンドブラスト、超音波加工、レーザー加工
などの方法で穴をあけ、そこに金属を埋め込み、ボンデ
ィングパッドや配線を形成することによって多層配線基
板あるいはビアホールをもった単相配線基板を作製する
こともできる。The glass processing method is not particularly limited, and a conventionally used method can be used. For example, a substrate having excellent flatness can be manufactured by slicing the obtained glass block into a thin plate and lapping or polishing both surfaces. Wiring is formed on this substrate by using a technique such as plating, vapor deposition, sputtering, etching, or photolithography, thereby providing a wiring board for mounting a semiconductor. Drill holes in the glass substrate by etching, sandblasting, ultrasonic processing, laser processing, etc., embed metal in them, and form bonding pads and wiring to form multilayer wiring boards or single-phase wiring boards with via holes. It can also be made.
【００２３】[0023]
【実施例】次に、本発明を実施例により、さらに詳細に
説明するが、本発明は、これらの例によってなんら限定
されるものではない。Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.
【００２４】実施例１〜７ 表１および表２に示す組成のガラスを溶融し鉄枠中に鋳
込み成形し、室温まで徐冷することによりガラスブロッ
クを作製した。得られたガラスブロックを切断、スライ
ス、研磨を経て１００×１００×１．０ｍｍの板状に加
工した。このガラス基板の熱膨張係数、ガラス転移点お
よび面粗度（Ｒａ）を測定した。なお、熱膨張係数、ガ
ラス転移点は日本光学硝子工業会規格ＪＯＧＩＳ−１９
７５に基づき測定すると共に、面粗度は接触式表面粗さ
計で測定した。結果を表１および表２に示す。Examples 1 to 7 Glasses having the compositions shown in Tables 1 and 2 were melted, cast into an iron frame, and gradually cooled to room temperature to produce glass blocks. The obtained glass block was cut, sliced, and polished to form a 100 × 100 × 1.0 mm plate. The thermal expansion coefficient, glass transition point and surface roughness (Ra) of this glass substrate were measured. The thermal expansion coefficient and the glass transition point are based on the Japan Optical Glass Industrial Association standard JOGIS-19.
75, and the surface roughness was measured by a contact type surface roughness meter. The results are shown in Tables 1 and 2.
【００２５】[0025]
【表１】 [Table 1]
【００２６】[0026]
【表２】 [Table 2]
【００２７】比較例１、２ 表３に示す組成のガラスを溶融し、実施例１〜７と同様
にしてガラス基板を作製し、熱膨張係数、ガラス転移点
および面粗度（Ｒａ）を測定した。その結果を表３に示
す。Comparative Examples 1 and 2 Glasses having the compositions shown in Table 3 were melted, glass substrates were prepared in the same manner as in Examples 1 to 7, and the thermal expansion coefficient, glass transition point, and surface roughness (Ra) were measured. did. Table 3 shows the results.
【００２８】比較例３、４ 市販のアルミナセラミック基板（比較例３）および市販
のガラス−エポキシ樹脂基板（比較例４）の熱膨張係
数、ガラス転移点および面粗度（Ｒａ）を、実施例１〜
７と同様にして測定した。その結果を表３に示す。Comparative Examples 3 and 4 The thermal expansion coefficient, glass transition point and surface roughness (Ra) of a commercially available alumina ceramic substrate (Comparative Example 3) and a commercially available glass-epoxy resin substrate (Comparative Example 4) were measured in Examples. 1 to
It measured similarly to 7. Table 3 shows the results.
【００２９】[0029]
【表３】 [Table 3]
【００３０】表１、２から分かるように、実施例１〜７
のガラス基板はいずれも熱膨張係数が８０〜９０×１０
-7／℃であり面粗度（Ｒａ）が１０ｎｍ未満である。一
方、表３から分かるように、比較例１、２のガラス基板
は熱膨張係数が３０〜５０×１０-7／℃と低い。さらに
比較例３、４のアルミナセラミック基板、ガラス−エポ
キシ樹脂基板は、いずれも面粗さが大きい。またガラス
−エポキシ樹脂基板はガラス転移点が低い上、熱膨張係
数が大きい。As can be seen from Tables 1 and 2, Examples 1 to 7
Each of the glass substrates has a coefficient of thermal expansion of 80 to 90 × 10
−7 / ° C., and the surface roughness (Ra) is less than 10 nm. On the other hand, as can be seen from Table 3, the glass substrates of Comparative Examples 1 and 2 have a low coefficient of thermal expansion of 30 to 50 × 10 −7 / ° C. Further, the alumina ceramic substrates and the glass-epoxy resin substrates of Comparative Examples 3 and 4 all have large surface roughness. Further, the glass-epoxy resin substrate has a low glass transition point and a large thermal expansion coefficient.
【００３１】[0031]
【発明の効果】本発明の配線基板材料は、平坦性、平滑
性、電気絶縁性、加工性および化学的耐久性に優れると
共に、熱膨張係数が７０〜１００×１０-7／℃程度であ
り、半導体実装用配線基板などに有用である。The wiring board material of the present invention is excellent in flatness, smoothness, electrical insulation, workability and chemical durability, and has a coefficient of thermal expansion of about 70 to 100 × 10 -7 / ° C. It is useful for a wiring board for semiconductor mounting.
【図１】マザーボードに載置されているＩＣチップ実装
基板の１例の正面図である。FIG. 1 is a front view of an example of an IC chip mounting board mounted on a motherboard.
１ マザーボード ２ 配線基板 ３ ＩＣチップ ４ はんだバンプ ５ 配線形成部 DESCRIPTION OF SYMBOLS 1 Motherboard 2 Wiring board 3 IC chip 4 Solder bump 5 Wiring formation part
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｃ０３Ｃ 3/095 Ｃ０３Ｃ 3/095 3/097 3/097 Ｈ０５Ｋ 1/03 ６１０ Ｈ０５Ｋ 1/03 ６１０Ｃ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) C03C 3/095 C03C 3/095 3/097 3/097 H05K 1/03 610 H05K 1/03 610C
Claims (5)
Ｏ3 １〜１０％、Ａｌ2Ｏ3 １〜１０％、ＢａＯ ２
０〜５０％、ＳｒＯ ０〜２０％、ＭｇＯ０〜５％およ
びＣａＯ ０〜１５％を含有し、かつアルカリ成分を含
まないガラスからなる配線基板材料。1. A weight%, SiO 2 30~50%, B 2
O 3 1-10%, Al 2 O 3 1-10%, BaO 2
A wiring board material made of glass containing 0 to 50%, SrO 0 to 20%, MgO 0 to 5%, and CaO 0 to 15% and containing no alkali component.
Ｏ2、ＺｒＯ2、Ｎｂ2Ｏ5、Ｓｂ2Ｏ3、ＳｎＯ2、Ｌａ2Ｏ
3、Ｂｉ2Ｏ3、Ｙ2Ｏ3およびＦの中から選ばれる少なく
とも１種を含有する請求項１に記載の配線基板材料。2. Other components include ZnO, Ti
O 2 , ZrO 2 , Nb 2 O 5 , Sb 2 O 3 , SnO 2 , La 2 O
3, Bi 2 O 3, Y 2 O 3 and the wiring board material of claim 1 containing at least one selected from the group consisting of F.
Ｏ3 １〜１０％、Ａｌ2Ｏ3 １〜７％、ＢａＯ ２２
〜３５％、ＳｒＯ １〜１７％、ＭｇＯ ０〜５％、Ｃ
ａＯ ０〜１４％、ＺｎＯ ０〜１５％、ＴｉＯ2 ０
〜１０％、ＺｒＯ2 ０〜１０％およびＬａ2Ｏ3 ０〜
１０％を含有し、かつアルカリ成分を含まないガラスか
らなる請求項２に記載の配線基板材料。In wherein wt%, SiO 2 30~45%, B 2
O 3 1 to 10%, Al 2 O 3 1 to 7%, BaO 22
~ 35%, SrO 1 ~ 17%, MgO 0 ~ 5%, C
aO 0 to 14%, ZnO 0 to 15%, TiO 2 0
-10%, ZrO 2 0-10% and La 2 O 30 0
3. The wiring board material according to claim 2, wherein the wiring board material is made of glass containing 10% and containing no alkali component.
Ｏ3 １〜５％、Ａｌ2Ｏ3 １〜５％、ＢａＯ ２５〜
３５％、ＳｒＯ １〜１０％、ＭｇＯ ０〜５％、Ｃａ
Ｏ １〜１０％、ＺｎＯ ０〜１５％、ＴｉＯ2 ０〜
７％、ＺｒＯ2０〜７％およびＬａ2Ｏ3 １〜７％を含
有し、かつＴｉＯ2とＺｒＯ2の合計含有量が１〜７％で
あって、アルカリ成分を含まないガラスからなる請求項
３に記載の配線基板材料。4. The composition according to claim 1, wherein 35% to 40% of SiO 2 and B 2
O 3 1-5%, Al 2 O 3 1-5%, BaO 25-
35%, SrO 1-10%, MgO 0-5%, Ca
O 1-10%, ZnO 0-15%, TiO 2 0
7%, ZrO 2 0-7%, and La 2 O 3 1-7%, and the total content of TiO 2 and ZrO 2 is 1-7%, and the glass comprises no alkali component. Item 4. The wiring board material according to Item 3.
である請求項１〜４のいずれか１項に記載の配線基板材
料。5. A thermal expansion coefficient of 70 to 100 × 10 −7 / ° C.
The wiring board material according to any one of claims 1 to 4, wherein
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8168698P | 1998-04-14 | 1998-04-14 | |
| US60/081,686 | 1998-04-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000001330A true JP2000001330A (en) | 2000-01-07 |
Family
ID=22165738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10395299A Withdrawn JP2000001330A (en) | 1998-04-14 | 1999-04-12 | Circuit board material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000001330A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001058849A (en) * | 1999-06-09 | 2001-03-06 | Asahi Glass Co Ltd | Barium borosilicate glass and glass ceramic composition |
| JP2002121047A (en) * | 2000-10-13 | 2002-04-23 | Shinetsu Quartz Prod Co Ltd | Plasma corrosion-resistant glass member |
| WO2003102928A1 (en) * | 2002-06-03 | 2003-12-11 | Hoya Corporation | Substrate for information recording medium, information recording medium and process for producing the same |
| WO2004094338A1 (en) * | 2003-04-21 | 2004-11-04 | Asahi Glass Company, Limited | Lead-free glass for forming dielectric, glass ceramics composition for forming dielectric, dielectric and method for producing laminated dielectric |
| JP2006344927A (en) * | 2005-05-10 | 2006-12-21 | Nippon Electric Glass Co Ltd | Glass substrate for semiconductor devices, and chip scale package using the same |
| WO2010099634A1 (en) * | 2009-03-06 | 2010-09-10 | Institute Of Metal Research, Chinese Academy Of Sciences | Sealing technology |
| JP2012254918A (en) * | 2011-05-18 | 2012-12-27 | Nippon Electric Glass Co Ltd | High-refractive-index glass |
| JP2013241323A (en) * | 2012-04-24 | 2013-12-05 | Nippon Electric Glass Co Ltd | Crystalline glass composition |
| WO2015080044A1 (en) * | 2013-11-27 | 2015-06-04 | 日本電気硝子株式会社 | Glass |
-
1999
- 1999-04-12 JP JP10395299A patent/JP2000001330A/en not_active Withdrawn
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001058849A (en) * | 1999-06-09 | 2001-03-06 | Asahi Glass Co Ltd | Barium borosilicate glass and glass ceramic composition |
| JP2002121047A (en) * | 2000-10-13 | 2002-04-23 | Shinetsu Quartz Prod Co Ltd | Plasma corrosion-resistant glass member |
| JP4614403B2 (en) * | 2000-10-13 | 2011-01-19 | 信越石英株式会社 | Plasma corrosion resistant glass member |
| US7462411B2 (en) | 2002-06-03 | 2008-12-09 | Hoya Corporation | Substrate for information recording medium, information recording medium and process for producing the same |
| WO2003102928A1 (en) * | 2002-06-03 | 2003-12-11 | Hoya Corporation | Substrate for information recording medium, information recording medium and process for producing the same |
| US7544629B2 (en) | 2003-04-21 | 2009-06-09 | Asahi Glass Company, Limited | Non-lead glass for forming dielectric, glass ceramic composition for forming dielectric, dielectric, and process for producing laminated dielectric |
| WO2004094338A1 (en) * | 2003-04-21 | 2004-11-04 | Asahi Glass Company, Limited | Lead-free glass for forming dielectric, glass ceramics composition for forming dielectric, dielectric and method for producing laminated dielectric |
| JP2006344927A (en) * | 2005-05-10 | 2006-12-21 | Nippon Electric Glass Co Ltd | Glass substrate for semiconductor devices, and chip scale package using the same |
| WO2010099634A1 (en) * | 2009-03-06 | 2010-09-10 | Institute Of Metal Research, Chinese Academy Of Sciences | Sealing technology |
| JP2012254918A (en) * | 2011-05-18 | 2012-12-27 | Nippon Electric Glass Co Ltd | High-refractive-index glass |
| JP2012254920A (en) * | 2011-05-18 | 2012-12-27 | Nippon Electric Glass Co Ltd | Glass |
| JP2013241323A (en) * | 2012-04-24 | 2013-12-05 | Nippon Electric Glass Co Ltd | Crystalline glass composition |
| WO2015080044A1 (en) * | 2013-11-27 | 2015-06-04 | 日本電気硝子株式会社 | Glass |
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