ITTO20110210A1 - PHOTOVOLTAIC CELL WITH P-N JUNCTION DISTRIBUTED IN A SPACIAL WAY IN THE SEMICONDUCTOR SUBSTRATE - Google Patents

PHOTOVOLTAIC CELL WITH P-N JUNCTION DISTRIBUTED IN A SPACIAL WAY IN THE SEMICONDUCTOR SUBSTRATE Download PDF

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Publication number
ITTO20110210A1
ITTO20110210A1 IT000210A ITTO20110210A ITTO20110210A1 IT TO20110210 A1 ITTO20110210 A1 IT TO20110210A1 IT 000210 A IT000210 A IT 000210A IT TO20110210 A ITTO20110210 A IT TO20110210A IT TO20110210 A1 ITTO20110210 A1 IT TO20110210A1
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IT
Italy
Prior art keywords
way
junction
photovoltaic cell
semiconductor substrate
spacial
Prior art date
Application number
IT000210A
Other languages
Italian (it)
Inventor
Francesco Agus
Original Assignee
Francesco Agus
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Francesco Agus filed Critical Francesco Agus
Priority to IT000210A priority Critical patent/ITTO20110210A1/en
Publication of ITTO20110210A1 publication Critical patent/ITTO20110210A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Description

Descrizione dell’invenzione industriale dal titolo: Description of the industrial invention entitled:

CELLA FOTOVOLTAICA CON GIUNZIONE P-N DISTRIBUITA IN MODO PHOTOVOLTAIC CELL WITH P-N JUNCTION DISTRIBUTED IN A WAY

SPAZIALE NEL SUBSTRATO DI SEMICONDUTTORE SPATIAL IN THE SEMICONDUCTOR SUBSTRATE

DESCRIZIONE DESCRIPTION

INTRODUZIONE INTRODUCTION

Oggetto del presente documento è la descrizione di una nuova tipologia di cella fotovoltaica e della sua architettura. La caratteristica principale di tale dispositivo consiste nel posizionamento della giunzione P-N secondo una geometria di tipo spaziale nel substrato di materiale semiconduttore. The subject of this document is the description of a new type of photovoltaic cell and its architecture. The main feature of this device consists in the positioning of the P-N junction according to a spatial type geometry in the substrate of semiconductor material.

OBIETTIVO DELL'INVENZIONE OBJECTIVE OF THE INVENTION

L'obiettivo del presente progetto è quello di costruire celle fotovoltaiche aventi una effìcenza energetica superiore a quelle attuali. The objective of this project is to build photovoltaic cells with an energy efficiency higher than the current ones.

PRINCIPIO DI FUNZIONAMENTO ED ESEMPIO DI REALIZZAZIONE PRINCIPLE OF OPERATION AND EXAMPLE OF REALIZATION

La produzione della corrente elettrica in una cella fotovoltaica è dovuta all'azione della luce e dei suoi fotoni, i quali incidendo nella giunzione P-N del semiconduttore danno luogo alla separazione di coppie di elettroni e lacune. The production of electric current in a photovoltaic cell is due to the action of light and its photons, which, by cutting into the P-N junction of the semiconductor, result in the separation of pairs of electrons and holes.

Nelle tradizionali celle fotovoltaiche la geometria della giunzione P-N è sostanzialmente di tipo planare, posizionata in modo parallelo al piano principale e la cosidetta zona di svuotamento, per sue dimensioni e suo posizionamento, non è in grado di assorbire i fotoni relativi ad un più ampio spettro di lunghezze d'onda. Inoltre, sempre a causa della geometria della cella (tradizionale) medesima e della sistemazione degli elettrodi di materiale conduttore, si ha un notevole riassorbimento della corrente eventualmente prodotta a causa della cosidetta lunghezza di diffusione dei portatori di carica. In traditional photovoltaic cells, the geometry of the P-N junction is substantially of the planar type, positioned parallel to the main plane and the so-called emptying area, due to its size and positioning, is not able to absorb photons relating to a wider spectrum of wavelengths. Furthermore, again due to the geometry of the (traditional) cell itself and the arrangement of the electrodes of conductive material, there is a considerable reabsorption of the current possibly produced due to the so-called diffusion length of the charge carriers.

Risulta dunque fortemente ridotta l'efficacia dell'azione della luce e dei fotoni. The effectiveness of the action of light and photons is therefore greatly reduced.

Nella soluzione oggetto del presente documento, si implementa invece una architettura completamente differente. In essa la giuzione P-N è posizionata in modo spaziale e non già solamente planare e si estende dal corpo del semiconduttore fino alla sua superficie, sul piano sottoposto all' illuminazione della luce e dei fotoni. I portatori di carica che vengono liberati sono poi raccolti su linee di materiale conduttore presenti sulla superfìcie opportunamente disposti. In the solution object of this document, instead, a completely different architecture is implemented. In it the P-N junction is positioned in a spatial way and not just planar and extends from the body of the semiconductor to its surface, on the plane subjected to the illumination of light and photons. The charge carriers which are released are then collected on suitably arranged lines of conductive material present on the surface.

Una possibile soluzione costruttiva per questa innovativa cella, oggetto del presente documento, si trova nel disegno allegato. A possible constructive solution for this innovative cell, object of this document, is found in the attached drawing.

Si nota in essa la giunzione P-N posizionata in modo spaziale e volumetrico, anziché solamente planare, mentre si riscontrano le seguenti parti principali, asservite alle relative funzioni: It can be seen in it the P-N junction positioned in a spatial and volumetric way, rather than just planar, while the following main parts are found, subservient to the relative functions:

A. Elemento di materiale semiconduttore (esempio: silicio). A. Element of semiconductor material (example: silicon).

B. Zona con drogaggio tipo P. B. Zone with doping type P.

C. Zona con drogaggio tipo N. C. Zone with doping type N.

D. Linee di materiale conduttore. D. Lines of conductive material.

E. Elettrodi. E. Electrodes.

F. Giunzione P-N con zona di svuotamento e carica spaziale posizionata in modo spaziale fino alla superfìcie della cella. F. P-N junction with depletion zone and space charge positioned in a spatial manner up to the surface of the cell.

Claims (2)

CELLA FOTOVOLTAICA CON GIUNZIONE P-N DISTRIBUITA IN MODO SPAZIALE NEL SUBSTRATO DI SEMICONDUTTORE RIVENDICAZIONI 1) Nella cella oggetto di questa invenzione industriale, la giuzione P-N è posizionata in modo spaziale e non già solamente planare e si estende dal corpo del semiconduttore fino alla sua superficie, permettendo l<'>assorbimento da una gamma più ampia di lunghezze d'onda. PHOTOVOLTAIC CELL WITH P-N JUNCTION DISTRIBUTED IN A WAY SPATIAL IN THE SEMICONDUCTOR SUBSTRATE CLAIMS 1) In the cell object of this industrial invention, the P-N junction is positioned in a spatial way and not just planar and extends from the body of the semiconductor to its surface, allowing absorption from a wider range of lengths of wave. 2) Le linee di materiale conduttore atte a raccogliere le cariche elettriche liberate dai fotoni sono mediamente più vicine alle zone di svuotamento dove è presente la carica spaziale, rispetto alle celle tradizionali, in modo da ridurre il fenomeno della ricombinazione di elettroni e lacune causato dalla lunghezza di diffusione.2) The lines of conductive material designed to collect the electrical charges released by the photons are on average closer to the emptying areas where the space charge is present, compared to traditional cells, in order to reduce the phenomenon of recombination of electrons and holes caused by diffusion length.
IT000210A 2011-03-09 2011-03-09 PHOTOVOLTAIC CELL WITH P-N JUNCTION DISTRIBUTED IN A SPACIAL WAY IN THE SEMICONDUCTOR SUBSTRATE ITTO20110210A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
IT000210A ITTO20110210A1 (en) 2011-03-09 2011-03-09 PHOTOVOLTAIC CELL WITH P-N JUNCTION DISTRIBUTED IN A SPACIAL WAY IN THE SEMICONDUCTOR SUBSTRATE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000210A ITTO20110210A1 (en) 2011-03-09 2011-03-09 PHOTOVOLTAIC CELL WITH P-N JUNCTION DISTRIBUTED IN A SPACIAL WAY IN THE SEMICONDUCTOR SUBSTRATE

Publications (1)

Publication Number Publication Date
ITTO20110210A1 true ITTO20110210A1 (en) 2012-09-10

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IT000210A ITTO20110210A1 (en) 2011-03-09 2011-03-09 PHOTOVOLTAIC CELL WITH P-N JUNCTION DISTRIBUTED IN A SPACIAL WAY IN THE SEMICONDUCTOR SUBSTRATE

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3794891A (en) * 1972-03-03 1974-02-26 Mitsubishi Electric Corp High speed response phototransistor and method of making the same
AU749022B2 (en) * 1998-06-29 2002-06-13 Unisearch Limited A self aligning method for forming a selective emitter and metallization in a solar cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3794891A (en) * 1972-03-03 1974-02-26 Mitsubishi Electric Corp High speed response phototransistor and method of making the same
AU749022B2 (en) * 1998-06-29 2002-06-13 Unisearch Limited A self aligning method for forming a selective emitter and metallization in a solar cell

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