ITPI20110135A1 - Transistori ad effetto di campo con canale bidimensionale realizzato con eterostrutture laterali basate su grafene ibridizzato - Google Patents

Transistori ad effetto di campo con canale bidimensionale realizzato con eterostrutture laterali basate su grafene ibridizzato Download PDF

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ITPI20110135A1
ITPI20110135A1 IT000135A ITPI20110135A ITPI20110135A1 IT PI20110135 A1 ITPI20110135 A1 IT PI20110135A1 IT 000135 A IT000135 A IT 000135A IT PI20110135 A ITPI20110135 A IT PI20110135A IT PI20110135 A1 ITPI20110135 A1 IT PI20110135A1
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channel
domains
graphene
hbcn
field effect
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Gianluca Fiori
Giuseppe Iannaccone
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Gianluca Fiori
Giuseppe Iannaccone
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Priority to IT000135A priority Critical patent/ITPI20110135A1/it
Priority to PCT/IT2012/000363 priority patent/WO2013080237A1/en
Priority to EP12815848.2A priority patent/EP2786416B1/en
Priority to US14/362,269 priority patent/US9620634B2/en
Publication of ITPI20110135A1 publication Critical patent/ITPI20110135A1/it

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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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Description

TITOLO: "TRANSISTORI AD EFFETTO DI CAMPO CON CANALE BIDIMENSIONALE REALIZZATO CON ETEROSTRUTTURE LATERALI BASATE SU GRAFENE IBRIDIZZATO"
DESCRIZIONE
Il grafene ha interessanti proprietà elettroniche, quali l'elevata mobilità e la relazione di dispersione simmetrica per elettroni e lacune. Ha però un gap di energìa nullo, e quindi non è direttamente utilizzabile come canale di transistori ad effetto di campo. Infatti, il gap nullo non costituisce una barriera efficace al transito di elettroni e lacune, e quindi non è possibile condurre il transistore in interdizione. [Lemme, M.; Echtermeyer, T.; Baus, M.; Kurz, H. A graphene field-effect device. IEEE Electr. Dev. Lett. 2007, 28, 282-284 .][Avouris, P.; Chen, Z.; Perebeinos, V. Carbonbased electronics. Nat. Nanotech. 2007, 2, 605- 615.] Recenti esperimenti hanno dimostrato la possibilità di realizzare strutture ibride bidimensionali formate da domini intercalati di carbonio ed hBCN [hexagonal boron, carbon, nitrogen (boro, carbonio, azoto esagonale)]. Le proprietà di tali domini possono essere modificate variando le frazioni relative dei tre elementi. Il grafene ha gap di energia nullo, ma i domini hBCN possono avere un gap tra 1 e 5 electronVolt , come mostrato in [Ci, L.; Song, L.; Jin, C.; Jariwala, D.; Wu, D. ; Li, Y.; Srivastava, A.; Wang, Z. F. ; Storr, K.; L. Balicas, P. M. A., F. Liu Nat. Mater. 2001, 9, 430.]
Sulla base di questi valori, descriviamo l'invenzione dì una nuova serie di dispositivi con canale perfettamente bidimensionale, basati sull 'ingegnerizzazione di grafene ibridizzato .
Tale approccio potrà aprire nuove strade per la nanoelettronica in grafene, poiché le strutture ibride hBCN consentono di sopprimere il comportamento ambipolare, bloccando il flusso di uno dei due tipi di portatori, e quindi modulare completamente la corrente usando portatori dell'altro tipo.
[Prima realizzazione]
Un prima realizzazione del transistore a effetto di campo (FET) proposto è illustrata in Figura 1 (la sua sezione longitudinale nel riquadro di Figura 1). Il canale è rappresentato dal piano con reticolo esagonale, e si estende dal contatto di source (S) al contatto di drain (D). Nel canale è presente uno dominio di lunghezza tB di tipo hBCN. Sopra e sotto il canale sono presenti due strati dì materiale dielettrico (dielectric) di spessore tox e due gate (gate) di lunghezza L. Le regioni del canale coperte dal gate non sono drogate, mentre le estensioni di source e drain sono drogate con frazione molare f.
La barriera nel canale è formata da composti di nitruro di boro esagonale (hBCN), quali ad esempio nitruro di boro (BN), diverse coniigurazonì con una concentrazione di carbonio del 50% (BC2N), una concentrazione di carbonio dell'75% (BC6N), oppure altri materiali bidimensionali con reticolo compatibile con il grafene.
Se si considera come potenziale di riferimento il livello di Fermi intrinseco del grafene, e yG = 4.248 eV è l'affinità elettronica del grafene, le altezze delle barriere di energia viste da elettroni e lacune nel canale sono rispettivamente BC = XG - x , and BV =IχΘ-χ-Egap!, come mostrato in Fig. 2.
In Figura 3 mostriamo le caratteristiche di trasferimento calcolate con il pacchetto di simulazione di dispositivi NANOTCAD VIDES di un FET di tipo P con una barriera di BC2N (avente un gap di energia di circa 1.6 eV) per diversi valori della posizione ym del punto centrale della barriera lungo la direzione longitudinale, ed una tensione di 0.6 V applicata tra drain e source.
Nella stessa figura, mostriamo come riferimento la caratteristica di trasferimento di un transistore con la stressa struttura ma con il canale solo in grafene, cioè senza la barriera. Il cosidetto "rapporto Ion/Ioff", cioè il rapporto tra corrente di drain massima e minima per una variazione della tensione di gate pari alla tensione applicata tra drain e source (0.6 V nel nostro caso) è minore di 10 per il transistore in grafene, mentre è superiore a diecimila per un FET con canale BC2N, ed è poco dipendente rispetto alla posizione ym della barriera. I gate metallici consentono di controllare bene la barriera nel canale, come si vede anche dalla pendenza sottoglia di circa 80 mV/decade.
Come indicato, nonostante la struttura a doppio gate, la pendenza sottosoglia è peggiore del valore ideale ottenibile a temperatura ambiente (60 mV/dec) . L'effetto può essere spiegato dalla presenza di un'alta densità locale di stati nelle regioni di overlap tra strato di grafene e gate, che induce una significativa capacità quantistica del canale. D'altra parte, se si avesse un underlap, cioè se fosse L < tB, si osserverebbe un deterioramento della pendenza sottosoglia per la presenza di interfacce di tipo Schottky tra la barriera e le estensioni di source e drain, che ridurrebbero il grado controllo del gate sul potenziale nel canale.
[Seconda realizzazione]
Una seconda realizzazione è un FET tunnel risonante (RTFET), dove due domini di hBCN di lunghezza tB sono presenti nel canale e sotto il gate, separate da una regione di grafene di lunghezza w, come mostrato in Figura 4.
In questo caso le due barriere formano un risonatore Fabry-Perot per i portatori di carica, che può essere modulato in energia variando la tensione applicata al gate (gate). In questo modo si può ottenere una caratteristica dì trasferimento con una regione di transconduttanza negativa , che è uno dei caratteri distintivi di un RTFET. Più 1'ossido e sottile, migliore è il controllo del potenziale del canale da parte del gate, più pronunciata è la regione a transconduttanza differenziale negativa.
L'RTFET qui descritto consente un controllo elettrostatico del canale da parte del gate molto migliore dì altre precedenti proposte di transistori tunnel risonanti presenti in letteratura tecnica, e tipicamente basati su materiali del sistema III-V [Capasso, F. ; Sen, S.; Gossard, A. ; Hutchinson, A.; English, J. Quantum well resonant tunneling bipolar transistor operating at room temperature. Proc. of Intern. Electr. Dev. Meet. 1986, 282-285].
Il grafene ibridizzato con domini intercalati di carbonio e hBCN rappresenta una piattaforma eccezionale per esplorare dispositivi elettronici veramente bidimensionali. La possibilità di ingegneri zzare le proprietà elettroniche del canale con hBCN consente di ottenere un'ottima modulazione della corrente in transistori ad effetto di campo basati su grafene. Ulteriori funzionalità possono essere raggiunte introducendo strutture bidimensionali di domìni differenti, come abbiamo visto nel caso del RTFET. Esperti nel settore potranno facilmente esplorare ulteriori vantaggi e modifiche. Per questo motivo, l'invenzione nei suoi aspetti più ampi non è limitata ai dettagli specifici e alle realizzazioni rappresentative mostrate qui. Di conseguenza, varie modificazioni possono essere fatte senza che ci si allontani dallo spirito e dalla portata del concetto generale, definito dalle successive rivendicazioni.

Claims (1)

  1. TITOLO: "TRANSISTORI AD EFFETTO DI CAMPO CON CANALE BIDIMENSIONALE REALIZZATO CON ETEROSTRUTTURE LATERALI BASATE SU GRAFENE IBRIDIZZATO" a nome di Giuseppe Iannaccone, di nazionalità italiana, residente in Via Giunta Pisano 22, 56126 Pisa, e Gianluca Fiori, di nazionalità italiana, residente in Viale Puccini 674C, 55100 Lucca, Lucca. Inventori designati:GIUSEPPE IANNACCONE, GIANLUCA FIORI RIVENDICAZIONI 1.Un transistore a effetto di campo con un canale bidimensionale comprendente un 'eterostruttura laterale formata dall'intercalare di domini di grafene mono o multistrato atomico e domini di boro-carbonio-azoto esagonale (hBCN), e con uno o multipli gate. 2.Un dispositivo secondo la rivendicazione 1, in cui il canale è un mono o multi-strato atomico di grafene contenente un singolo dominio di hBCN sotto il gate che svolge la funzione di barriera per portatori di carica nel canale. 3.Un dispositivo secondo la rivendicazione 1, in cui il canale è un mono o multi-strato atomico di grafene contenente due domini di hBCN sotto il gate, separati a una sottile regione di grafene, funzionante come un transistore ad effetto di campo tunnel risonante. 4.Un dispositivo secondo la rivendicazione 1 in cui nel canale è presente un'eterostruttura laterale formata da domini di materiali differenti rispetto a quelli menzionati nella rivendicazione 1. 5.Un dispositivo secondo la rivendicazione 1 in cui i domini di hBCN sono sostituiti da domini di vacanze (assenza di atomi di carbonio) e quindi le barriere ai portatori di carica sono costituite dal vuoto o da materiale dielettrico
IT000135A 2011-12-02 2011-12-02 Transistori ad effetto di campo con canale bidimensionale realizzato con eterostrutture laterali basate su grafene ibridizzato ITPI20110135A1 (it)

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IT000135A ITPI20110135A1 (it) 2011-12-02 2011-12-02 Transistori ad effetto di campo con canale bidimensionale realizzato con eterostrutture laterali basate su grafene ibridizzato
PCT/IT2012/000363 WO2013080237A1 (en) 2011-12-02 2012-11-30 Field-effect transistor with two-dimensional channel realized with lateral heterostructures based on hybridized graphene
EP12815848.2A EP2786416B1 (en) 2011-12-02 2012-11-30 Field-effect transistor with two-dimensional channel realized with lateral heterostructures based on hybridized graphene
US14/362,269 US9620634B2 (en) 2011-12-02 2012-11-30 Field-effect transistor with two-dimensional channel realized with lateral heterostructures based on hybridized graphene

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US10781351B1 (en) * 2016-05-25 2020-09-22 Louisiana Tech Research Corporation Hexagonal boron nitride thermal conductivity enhancing materials and method of making
US11136666B2 (en) 2018-08-30 2021-10-05 University Of Kentucky Research Foundation Ordered nanotubes on a two-dimensional substrate consisting of different material properties
KR102250011B1 (ko) * 2018-10-18 2021-05-10 한양대학교 산학협력단 막 구조체, 소자 및 멀티레벨 소자

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