IT998037B - PERFECTED SEMICONDUCTIVE STRUCTURE - Google Patents

PERFECTED SEMICONDUCTIVE STRUCTURE

Info

Publication number
IT998037B
IT998037B IT2776271A IT2776271A IT998037B IT 998037 B IT998037 B IT 998037B IT 2776271 A IT2776271 A IT 2776271A IT 2776271 A IT2776271 A IT 2776271A IT 998037 B IT998037 B IT 998037B
Authority
IT
Italy
Prior art keywords
perfected
semiconductive structure
semiconductive
perfected semiconductive
Prior art date
Application number
IT2776271A
Other languages
Italian (it)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT998037B publication Critical patent/IT998037B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Memories (AREA)
IT2776271A 1970-09-12 1971-08-24 PERFECTED SEMICONDUCTIVE STRUCTURE IT998037B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702045177 DE2045177A1 (en) 1970-09-12 1970-09-12 Surface controlled semiconductor device

Publications (1)

Publication Number Publication Date
IT998037B true IT998037B (en) 1976-01-20

Family

ID=5782266

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2776271A IT998037B (en) 1970-09-12 1971-08-24 PERFECTED SEMICONDUCTIVE STRUCTURE

Country Status (4)

Country Link
JP (1) JPS5144868B1 (en)
DE (1) DE2045177A1 (en)
GB (1) GB1332255A (en)
IT (1) IT998037B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4611220A (en) * 1983-11-16 1986-09-09 General Motors Corporation Junction-MOS power field effect transistor
US4786952A (en) * 1986-07-24 1988-11-22 General Motors Corporation High voltage depletion mode MOS power field effect transistor
US4769685A (en) * 1986-10-27 1988-09-06 General Motors Corporation Recessed-gate junction-MOS field effect transistor

Also Published As

Publication number Publication date
GB1332255A (en) 1973-10-03
JPS5144868B1 (en) 1976-12-01
DE2045177A1 (en) 1972-03-16

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