IT995017B - Metodo di fabbricazione di un di spositivo semiconduttore e dispo sitivo semiconduttore ottenuto con l ausilio di tale metodo - Google Patents

Metodo di fabbricazione di un di spositivo semiconduttore e dispo sitivo semiconduttore ottenuto con l ausilio di tale metodo

Info

Publication number
IT995017B
IT995017B IT26784/71A IT2678471A IT995017B IT 995017 B IT995017 B IT 995017B IT 26784/71 A IT26784/71 A IT 26784/71A IT 2678471 A IT2678471 A IT 2678471A IT 995017 B IT995017 B IT 995017B
Authority
IT
Italy
Prior art keywords
semiconducting
spositive
aid
manufacturing
device obtained
Prior art date
Application number
IT26784/71A
Other languages
English (en)
Italian (it)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7010208A external-priority patent/NL7010208A/xx
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT995017B publication Critical patent/IT995017B/it

Links

Classifications

    • H10W15/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401Combinations of FETs or IGBTs with BJTs
    • H10D84/403Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615Combinations of vertical BJTs and one or more of resistors or capacitors
    • H10P14/61
    • H10W10/00
    • H10W10/01
    • H10W10/012
    • H10W10/0121
    • H10W10/0126
    • H10W10/13
    • H10W15/01
IT26784/71A 1970-07-10 1971-07-09 Metodo di fabbricazione di un di spositivo semiconduttore e dispo sitivo semiconduttore ottenuto con l ausilio di tale metodo IT995017B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7010208A NL7010208A (OSRAM) 1966-10-05 1970-07-10

Publications (1)

Publication Number Publication Date
IT995017B true IT995017B (it) 1975-11-10

Family

ID=19810548

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26784/71A IT995017B (it) 1970-07-10 1971-07-09 Metodo di fabbricazione di un di spositivo semiconduttore e dispo sitivo semiconduttore ottenuto con l ausilio di tale metodo

Country Status (11)

Country Link
JP (1) JPS522273B2 (OSRAM)
AT (1) AT344788B (OSRAM)
BE (1) BE769733R (OSRAM)
CA (1) CA933675A (OSRAM)
CH (1) CH539949A (OSRAM)
ES (1) ES393039A2 (OSRAM)
GB (1) GB1363515A (OSRAM)
HK (2) HK59276A (OSRAM)
IT (1) IT995017B (OSRAM)
NL (1) NL176414C (OSRAM)
SE (1) SE383581B (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5370687A (en) * 1976-12-07 1978-06-23 Toshiba Corp Production of semiconductor device
EP1743378A1 (en) * 2004-04-27 2007-01-17 Koninklijke Philips Electronics N.V. Semiconductor device and method of manufacturing such a device

Also Published As

Publication number Publication date
AT344788B (de) 1978-08-10
SE383581B (sv) 1976-03-15
BE769733R (fr) 1972-01-10
CA933675A (en) 1973-09-11
HK59276A (en) 1976-10-01
CH539949A (de) 1973-07-31
JPS5176086A (OSRAM) 1976-07-01
NL8002038A (nl) 1980-07-31
ES393039A2 (es) 1973-08-16
JPS522273B2 (OSRAM) 1977-01-20
NL176414C (nl) 1985-04-01
HK59576A (en) 1976-10-01
NL176414B (nl) 1984-11-01
ATA594171A (de) 1977-12-15
GB1363515A (en) 1974-08-14

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