IT995017B - Metodo di fabbricazione di un di spositivo semiconduttore e dispo sitivo semiconduttore ottenuto con l ausilio di tale metodo - Google Patents
Metodo di fabbricazione di un di spositivo semiconduttore e dispo sitivo semiconduttore ottenuto con l ausilio di tale metodoInfo
- Publication number
- IT995017B IT995017B IT26784/71A IT2678471A IT995017B IT 995017 B IT995017 B IT 995017B IT 26784/71 A IT26784/71 A IT 26784/71A IT 2678471 A IT2678471 A IT 2678471A IT 995017 B IT995017 B IT 995017B
- Authority
- IT
- Italy
- Prior art keywords
- semiconducting
- spositive
- aid
- manufacturing
- device obtained
- Prior art date
Links
Classifications
-
- H10W15/00—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
-
- H10P14/61—
-
- H10W10/00—
-
- H10W10/01—
-
- H10W10/012—
-
- H10W10/0121—
-
- H10W10/0126—
-
- H10W10/13—
-
- H10W15/01—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7010208A NL7010208A (OSRAM) | 1966-10-05 | 1970-07-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT995017B true IT995017B (it) | 1975-11-10 |
Family
ID=19810548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT26784/71A IT995017B (it) | 1970-07-10 | 1971-07-09 | Metodo di fabbricazione di un di spositivo semiconduttore e dispo sitivo semiconduttore ottenuto con l ausilio di tale metodo |
Country Status (11)
| Country | Link |
|---|---|
| JP (1) | JPS522273B2 (OSRAM) |
| AT (1) | AT344788B (OSRAM) |
| BE (1) | BE769733R (OSRAM) |
| CA (1) | CA933675A (OSRAM) |
| CH (1) | CH539949A (OSRAM) |
| ES (1) | ES393039A2 (OSRAM) |
| GB (1) | GB1363515A (OSRAM) |
| HK (2) | HK59276A (OSRAM) |
| IT (1) | IT995017B (OSRAM) |
| NL (1) | NL176414C (OSRAM) |
| SE (1) | SE383581B (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5370687A (en) * | 1976-12-07 | 1978-06-23 | Toshiba Corp | Production of semiconductor device |
| EP1743378A1 (en) * | 2004-04-27 | 2007-01-17 | Koninklijke Philips Electronics N.V. | Semiconductor device and method of manufacturing such a device |
-
1971
- 1971-07-06 CA CA117451A patent/CA933675A/en not_active Expired
- 1971-07-07 SE SE7108803A patent/SE383581B/xx unknown
- 1971-07-07 GB GB3184371A patent/GB1363515A/en not_active Expired
- 1971-07-07 CH CH1001271A patent/CH539949A/de not_active IP Right Cessation
- 1971-07-08 BE BE769733A patent/BE769733R/xx active
- 1971-07-08 AT AT594171A patent/AT344788B/de not_active IP Right Cessation
- 1971-07-08 ES ES393039A patent/ES393039A2/es not_active Expired
- 1971-07-09 IT IT26784/71A patent/IT995017B/it active
-
1975
- 1975-11-27 JP JP50141236A patent/JPS522273B2/ja not_active Expired
-
1976
- 1976-09-23 HK HK592/76*UA patent/HK59276A/xx unknown
- 1976-09-23 HK HK595/76*UA patent/HK59576A/xx unknown
-
1980
- 1980-04-08 NL NLAANVRAGE8002038,A patent/NL176414C/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| AT344788B (de) | 1978-08-10 |
| SE383581B (sv) | 1976-03-15 |
| BE769733R (fr) | 1972-01-10 |
| CA933675A (en) | 1973-09-11 |
| HK59276A (en) | 1976-10-01 |
| CH539949A (de) | 1973-07-31 |
| JPS5176086A (OSRAM) | 1976-07-01 |
| NL8002038A (nl) | 1980-07-31 |
| ES393039A2 (es) | 1973-08-16 |
| JPS522273B2 (OSRAM) | 1977-01-20 |
| NL176414C (nl) | 1985-04-01 |
| HK59576A (en) | 1976-10-01 |
| NL176414B (nl) | 1984-11-01 |
| ATA594171A (de) | 1977-12-15 |
| GB1363515A (en) | 1974-08-14 |
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