IT950246B - Apparato di memorizzazione di informazioni - Google Patents

Apparato di memorizzazione di informazioni

Info

Publication number
IT950246B
IT950246B IT21916/72A IT2191672A IT950246B IT 950246 B IT950246 B IT 950246B IT 21916/72 A IT21916/72 A IT 21916/72A IT 2191672 A IT2191672 A IT 2191672A IT 950246 B IT950246 B IT 950246B
Authority
IT
Italy
Prior art keywords
information storage
storage apparatus
information
storage
Prior art date
Application number
IT21916/72A
Other languages
English (en)
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Application granted granted Critical
Publication of IT950246B publication Critical patent/IT950246B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/58—Tubes for storage of image or information pattern or for conversion of definition of television or like images, i.e. having electrical input and electrical output
    • H01J31/60—Tubes for storage of image or information pattern or for conversion of definition of television or like images, i.e. having electrical input and electrical output having means for deflecting, either selectively or sequentially, an electron ray on to separate surface elements of the screen
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/23—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes or William tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
IT21916/72A 1971-03-17 1972-03-16 Apparato di memorizzazione di informazioni IT950246B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12513371A 1971-03-17 1971-03-17

Publications (1)

Publication Number Publication Date
IT950246B true IT950246B (it) 1973-06-20

Family

ID=22418325

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21916/72A IT950246B (it) 1971-03-17 1972-03-16 Apparato di memorizzazione di informazioni

Country Status (6)

Country Link
US (1) US3761895A (it)
JP (1) JPS5417258B1 (it)
DE (1) DE2212527A1 (it)
FR (1) FR2130438B1 (it)
GB (1) GB1351421A (it)
IT (1) IT950246B (it)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3914600A (en) * 1974-07-25 1975-10-21 Us Army Electron image integration intensifier tube
US4064495A (en) * 1976-03-22 1977-12-20 General Electric Company Ion implanted archival memory media and methods for storage of data therein
US4081794A (en) * 1976-04-02 1978-03-28 General Electric Company Alloy junction archival memory plane and methods for writing data thereon
US4079358A (en) * 1976-10-04 1978-03-14 Micro-Bit Corporation Buried junction MOS memory capacitor target for electron beam addressable memory and method of using same
US4068218A (en) * 1976-10-04 1978-01-10 Micro-Bit Corporation Method and apparatus for deep depletion read-out of MOS electron beam addressable memories
US4128897A (en) * 1977-03-22 1978-12-05 General Electric Company Archival memory media and method for information recording thereon
US4190849A (en) * 1977-09-19 1980-02-26 Motorola, Inc. Electronic-beam programmable semiconductor device structure
US4212082A (en) * 1978-04-21 1980-07-08 General Electric Company Method for fabrication of improved storage target and target produced thereby
US4197144A (en) * 1978-09-21 1980-04-08 General Electric Company Method for improving writing of information in memory targets
US4213192A (en) * 1979-01-15 1980-07-15 Christensen Alton O Sr Electron beam accessed read-write-erase random access memory
DE2938568A1 (de) * 1979-09-24 1981-04-09 Siemens AG, 1000 Berlin und 8000 München N-kanal-speicher-fet
JPS5755591A (en) * 1980-09-19 1982-04-02 Hitachi Ltd Information recording method
US4575822A (en) * 1983-02-15 1986-03-11 The Board Of Trustees Of The Leland Stanford Junior University Method and means for data storage using tunnel current data readout
US4624533A (en) * 1983-04-06 1986-11-25 Eaton Corporation Solid state display
US4583833A (en) * 1984-06-07 1986-04-22 Xerox Corporation Optical recording using field-effect control of heating
US4878213A (en) * 1984-09-14 1989-10-31 Xerox Corporation System for recording and readout of information at atomic scale densities and method therefor
US4829507A (en) * 1984-09-14 1989-05-09 Xerox Corporation Method of and system for atomic scale readout of recorded information
US4907195A (en) * 1984-09-14 1990-03-06 Xerox Corporation Method of and system for atomic scale recording of information
US4613519A (en) * 1985-03-18 1986-09-23 The United State Of America As Represented By The United States Department Of Energy Electron-beam-induced information storage in hydrogenated amorphous silicon device
US4826732A (en) * 1987-03-16 1989-05-02 Xerox Corporation Recording medium
US4956817A (en) * 1988-05-26 1990-09-11 Quanscan, Inc. High density data storage and retrieval system
US5235542A (en) * 1989-04-03 1993-08-10 Ricoh Company, Ltd. Apparatus for converting optical information into electrical information signal, information storage element and method for storing information in the information storage element
US5051977A (en) * 1989-08-30 1991-09-24 Hoechst Celanese Corp. Scanning tunneling microscope memory utilizing optical fluorescence of substrate for reading
US5166919A (en) * 1991-07-11 1992-11-24 International Business Machines Corporation Atomic scale electronic switch
US6507552B2 (en) * 2000-12-01 2003-01-14 Hewlett-Packard Company AFM version of diode-and cathodoconductivity-and cathodoluminescence-based data storage media

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1201659A (en) * 1967-09-25 1970-08-12 Atomic Energy Authority Uk Improvements in or relating to memory devices
US3458782A (en) * 1967-10-18 1969-07-29 Bell Telephone Labor Inc Electron beam charge storage device employing diode array and establishing an impurity gradient in order to reduce the surface recombination velocity in a region of electron-hole pair production
FR1597737A (it) * 1967-12-07 1970-06-29
US3576392A (en) * 1968-06-26 1971-04-27 Rca Corp Semiconductor vidicon target having electronically alterable light response characteristics
US3668473A (en) * 1969-06-24 1972-06-06 Tokyo Shibaura Electric Co Photosensitive semi-conductor device
US3701979A (en) * 1970-01-09 1972-10-31 Micro Bit Corp Slow write-fast read memory method and system

Also Published As

Publication number Publication date
FR2130438B1 (it) 1976-10-29
JPS5417258B1 (it) 1979-06-28
GB1351421A (en) 1974-05-01
FR2130438A1 (it) 1972-11-03
DE2212527A1 (de) 1972-10-19
US3761895A (en) 1973-09-25

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