IT944252B - Contatto ohmico per semicondutto ri tipo p del gruppo iii v - Google Patents

Contatto ohmico per semicondutto ri tipo p del gruppo iii v

Info

Publication number
IT944252B
IT944252B IT32775/71A IT3277571A IT944252B IT 944252 B IT944252 B IT 944252B IT 32775/71 A IT32775/71 A IT 32775/71A IT 3277571 A IT3277571 A IT 3277571A IT 944252 B IT944252 B IT 944252B
Authority
IT
Italy
Prior art keywords
semiconduct
type
group iii
ohm contact
ohm
Prior art date
Application number
IT32775/71A
Other languages
English (en)
Italian (it)
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Application granted granted Critical
Publication of IT944252B publication Critical patent/IT944252B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
    • H—ELECTRICITY
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/838—Bonding techniques
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    • H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
IT32775/71A 1970-12-28 1971-12-22 Contatto ohmico per semicondutto ri tipo p del gruppo iii v IT944252B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10197170A 1970-12-28 1970-12-28

Publications (1)

Publication Number Publication Date
IT944252B true IT944252B (it) 1973-04-20

Family

ID=22287442

Family Applications (1)

Application Number Title Priority Date Filing Date
IT32775/71A IT944252B (it) 1970-12-28 1971-12-22 Contatto ohmico per semicondutto ri tipo p del gruppo iii v

Country Status (6)

Country Link
US (1) US3684930A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE777397A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA951145A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2120018B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1329760A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT944252B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890455A (en) * 1972-06-23 1975-06-17 Ibm Method of electrolessly plating alloys
DE2328905A1 (de) * 1973-06-06 1974-12-12 Siemens Ag Verfahren zur herstellung von metallkontakten an galliumphosphid-lumineszenzdioden mit geringen absorptionsverlusten
US3871016A (en) * 1973-12-26 1975-03-11 Gen Electric Reflective coated contact for semiconductor light conversion elements
US3889286A (en) * 1973-12-26 1975-06-10 Gen Electric Transparent multiple contact for semiconductor light conversion elements
US3871008A (en) * 1973-12-26 1975-03-11 Gen Electric Reflective multiple contact for semiconductor light conversion elements
US3942243A (en) * 1974-01-25 1976-03-09 Litronix, Inc. Ohmic contact for semiconductor devices
US3965279A (en) * 1974-09-03 1976-06-22 Bell Telephone Laboratories, Incorporated Ohmic contacts for group III-V n-type semiconductors
US3919709A (en) * 1974-11-13 1975-11-11 Gen Electric Metallic plate-semiconductor assembly and method for the manufacture thereof
US4024569A (en) * 1975-01-08 1977-05-17 Rca Corporation Semiconductor ohmic contact
US4195308A (en) * 1978-05-05 1980-03-25 Rca Corporation Ohmic contact for P type indium phosphide
US4186410A (en) * 1978-06-27 1980-01-29 Bell Telephone Laboratories, Incorporated Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors
US4495514A (en) * 1981-03-02 1985-01-22 Eastman Kodak Company Transparent electrode light emitting diode and method of manufacture
US4523212A (en) * 1982-03-12 1985-06-11 The United States Of America As Represented By The Secretary Of The Air Force Simultaneous doped layers for semiconductor devices
DE3378711D1 (en) * 1982-10-08 1989-01-19 Western Electric Co Fluxless bonding of microelectronic chips
US4662063A (en) * 1986-01-28 1987-05-05 The United States Of America As Represented By The Department Of The Navy Generation of ohmic contacts on indium phosphide
JPH03167877A (ja) * 1989-11-28 1991-07-19 Sumitomo Electric Ind Ltd ｎ型立方晶窒化硼素のオーム性電極及びその形成方法
US5480829A (en) * 1993-06-25 1996-01-02 Motorola, Inc. Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts
US5444016A (en) * 1993-06-25 1995-08-22 Abrokwah; Jonathan K. Method of making ohmic contacts to a complementary III-V semiconductor device
US5606184A (en) * 1995-05-04 1997-02-25 Motorola, Inc. Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making
US8288942B2 (en) * 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
WO2007142946A2 (en) 2006-05-31 2007-12-13 Cree Led Lighting Solutions, Inc. Lighting device and method of lighting

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2995475A (en) * 1958-11-04 1961-08-08 Bell Telephone Labor Inc Fabrication of semiconductor devices
US3323956A (en) * 1964-03-16 1967-06-06 Hughes Aircraft Co Method of manufacturing semiconductor devices
US3525146A (en) * 1965-12-11 1970-08-25 Sanyo Electric Co Method of making semiconductor devices having crystal extensions for leads
US3527946A (en) * 1966-06-13 1970-09-08 Gordon Kramer Semiconductor dosimeter having low temperature diffused junction
US3544854A (en) * 1966-12-02 1970-12-01 Texas Instruments Inc Ohmic contacts for gallium arsenide semiconductors
US3562667A (en) * 1968-10-01 1971-02-09 Fairchild Camera Instr Co Functional light-controlled gunn oscillator
US3593070A (en) * 1968-12-17 1971-07-13 Texas Instruments Inc Submount for semiconductor assembly

Also Published As

Publication number Publication date
FR2120018A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-08-11
DE2164429B2 (de) 1976-09-02
CA951145A (en) 1974-07-16
US3684930A (en) 1972-08-15
BE777397A (fr) 1972-06-28
FR2120018B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1977-04-22
GB1329760A (en) 1973-09-12
DE2164429A1 (de) 1972-07-13

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