IT8020130A0 - CMOS/SOS MEMORY CELL, INCLUDING DIODES. - Google Patents

CMOS/SOS MEMORY CELL, INCLUDING DIODES.

Info

Publication number
IT8020130A0
IT8020130A0 IT8020130A IT2013080A IT8020130A0 IT 8020130 A0 IT8020130 A0 IT 8020130A0 IT 8020130 A IT8020130 A IT 8020130A IT 2013080 A IT2013080 A IT 2013080A IT 8020130 A0 IT8020130 A0 IT 8020130A0
Authority
IT
Italy
Prior art keywords
cmos
memory cell
including diodes
sos
sos memory
Prior art date
Application number
IT8020130A
Other languages
Italian (it)
Other versions
IT1141377B (en
Inventor
Andrew Gordon Francis Dingwall
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT8020130A0 publication Critical patent/IT8020130A0/en
Application granted granted Critical
Publication of IT1141377B publication Critical patent/IT1141377B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
IT20130/80A 1979-02-26 1980-02-22 CMOS / SOS MEMORY CELL, INCLUDING DIODES IT1141377B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1520379A 1979-02-26 1979-02-26

Publications (2)

Publication Number Publication Date
IT8020130A0 true IT8020130A0 (en) 1980-02-22
IT1141377B IT1141377B (en) 1986-10-01

Family

ID=21770084

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20130/80A IT1141377B (en) 1979-02-26 1980-02-22 CMOS / SOS MEMORY CELL, INCLUDING DIODES

Country Status (5)

Country Link
JP (1) JPS55117266A (en)
DE (1) DE3006442A1 (en)
FR (1) FR2449973A1 (en)
IT (1) IT1141377B (en)
SE (1) SE444484B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678157A (en) * 1979-11-29 1981-06-26 Toshiba Corp Semiconductor device
DE3147951A1 (en) * 1981-12-03 1983-06-16 Siemens AG, 1000 Berlin und 8000 München STATIC STORAGE CELL
JPS59130459A (en) * 1983-01-17 1984-07-27 Hitachi Ltd Semiconductor memory integrated circuit device
JPH065714B2 (en) * 1983-07-26 1994-01-19 日本電気株式会社 Semiconductor memory cell
DE3650186T2 (en) * 1985-01-30 1995-05-24 Toshiba Kawasaki Kk Semiconductor device and method for its production.
US4805148A (en) * 1985-11-22 1989-02-14 Diehl Nagle Sherra E High impendance-coupled CMOS SRAM for improved single event immunity
US5239503A (en) * 1992-06-17 1993-08-24 Aptix Corporation High voltage random-access memory cell incorporating level shifter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1054714A (en) * 1974-10-09 1979-05-15 James A. Luisi High speed memory cell

Also Published As

Publication number Publication date
JPS55117266A (en) 1980-09-09
JPH0117264B2 (en) 1989-03-29
SE8001225L (en) 1980-08-27
DE3006442C2 (en) 1990-06-07
FR2449973A1 (en) 1980-09-19
IT1141377B (en) 1986-10-01
DE3006442A1 (en) 1980-09-04
FR2449973B1 (en) 1984-10-19
SE444484B (en) 1986-04-14

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