IT8020095A0 - DEVICE FOR PRODUCING DISENCHMENT PULSES FOR A POWER SEMICONDUCTOR. - Google Patents

DEVICE FOR PRODUCING DISENCHMENT PULSES FOR A POWER SEMICONDUCTOR.

Info

Publication number
IT8020095A0
IT8020095A0 IT8020095A IT2009580A IT8020095A0 IT 8020095 A0 IT8020095 A0 IT 8020095A0 IT 8020095 A IT8020095 A IT 8020095A IT 2009580 A IT2009580 A IT 2009580A IT 8020095 A0 IT8020095 A0 IT 8020095A0
Authority
IT
Italy
Prior art keywords
disenchment
pulses
producing
power semiconductor
semiconductor
Prior art date
Application number
IT8020095A
Other languages
Italian (it)
Other versions
IT1140688B (en
Inventor
Schneevogt Henning
Junge Gunter
Original Assignee
Licentia Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Gmbh filed Critical Licentia Gmbh
Publication of IT8020095A0 publication Critical patent/IT8020095A0/en
Application granted granted Critical
Publication of IT1140688B publication Critical patent/IT1140688B/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/06—Circuits specially adapted for rendering non-conductive gas discharge tubes or equivalent semiconductor devices, e.g. thyratrons, thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
IT20095/80A 1979-02-23 1980-02-21 DEVICE TO PRODUCE TRIGGERING PULSES FOR A POWER SEMICONDUCTOR IT1140688B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792907403 DE2907403A1 (en) 1979-02-23 1979-02-23 Control circuit for gate turn-off thyristor - uses second thyristor and capacitor with anode connected to control grid

Publications (2)

Publication Number Publication Date
IT8020095A0 true IT8020095A0 (en) 1980-02-21
IT1140688B IT1140688B (en) 1986-10-01

Family

ID=6063908

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20095/80A IT1140688B (en) 1979-02-23 1980-02-21 DEVICE TO PRODUCE TRIGGERING PULSES FOR A POWER SEMICONDUCTOR

Country Status (2)

Country Link
DE (1) DE2907403A1 (en)
IT (1) IT1140688B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61230519A (en) * 1985-04-05 1986-10-14 Mitsubishi Electric Corp Drive circuit for gate turn-off thyristor
JPH0799931B2 (en) * 1989-09-08 1995-10-25 東洋電機製造株式会社 Switching element drive circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6053549B2 (en) * 1977-02-15 1985-11-26 株式会社東芝 On/off control circuit for semiconductor switching devices

Also Published As

Publication number Publication date
IT1140688B (en) 1986-10-01
DE2907403A1 (en) 1980-09-04

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