IT7919225A0 - FIELD EFFECT TRANSISTOR. - Google Patents

FIELD EFFECT TRANSISTOR.

Info

Publication number
IT7919225A0
IT7919225A0 IT7919225A IT1922579A IT7919225A0 IT 7919225 A0 IT7919225 A0 IT 7919225A0 IT 7919225 A IT7919225 A IT 7919225A IT 1922579 A IT1922579 A IT 1922579A IT 7919225 A0 IT7919225 A0 IT 7919225A0
Authority
IT
Italy
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Application number
IT7919225A
Other languages
Italian (it)
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Publication of IT7919225A0 publication Critical patent/IT7919225A0/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
IT7919225A 1978-01-12 1979-01-11 FIELD EFFECT TRANSISTOR. IT7919225A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB131278 1978-01-12

Publications (1)

Publication Number Publication Date
IT7919225A0 true IT7919225A0 (en) 1979-01-11

Family

ID=9719800

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7919225A IT7919225A0 (en) 1978-01-12 1979-01-11 FIELD EFFECT TRANSISTOR.

Country Status (3)

Country Link
DE (1) DE2901129A1 (en)
FR (1) FR2414795A1 (en)
IT (1) IT7919225A0 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2462027A1 (en) * 1979-07-20 1981-02-06 Labo Electronique Physique Semiconducting gallium arsenide device - comprising substrate, buffer layer and series of semiconductor layers

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2386903A1 (en) * 1977-04-08 1978-11-03 Thomson Csf FIELD EFFECT TRANSISTOR ON LARGE BAND FORBIDDEN SUPPORT

Also Published As

Publication number Publication date
FR2414795A1 (en) 1979-08-10
DE2901129A1 (en) 1979-07-19

Similar Documents

Publication Publication Date Title
IT7829755A0 (en) FIELD EFFECT TRANSISTOR SENSITIVE TO CHEMICALS.
NL7704633A (en) FIELD EFFECT TRANSISTOR.
IT7926522A0 (en) CATHETERIZATION COMPLEX.
IT8324198A0 (en) GATE-COUPLED FIELD EFFECT TRANSISTOR PAIR AMPLIFIER.
IT7919156A0 (en) FASTENING DEVICE.
IT7919424A0 (en) "MIS" FIELD EFFECT TRANSISTOR WITH SHORT LENGTH CHANNEL.
NL177265C (en) LIGHT-EMITING SEMICONDUCTOR UNIT.
IT8321107A0 (en) FIELD EFFECT TRANSISTOR AMPLIFIER WITH WIDE DYNAMICS.
IT1058321B (en) FIELD-EFFECTIVE COMPLEMENTARY TRANSISTOR
NL186754C (en) SUBSON WEARING PROFILE.
IT1070009B (en) PERFECTED FIELD EFFECT TRANSISTOR
IT8122671A0 (en) FIELD EFFECT CAPACITY.
IT7926449A0 (en) STORAGE TRANSISTOR.
IT8023310A0 (en) EXTRUSION PLANT.
IT8024018A0 (en) TRANSISTORS.
NL7902967A (en) ELECTROLUMINESCATING SEMICONDUCTOR.
BR7906974A (en) TRANSISTOR
IT8021530A0 (en) ELECTROLUMINSCENCE SEMICONDUCTOR DEVICE.
IT7926448A0 (en) FIELD EFFECT TRANSISTOR WITH ISOLATED PORT.
NL7901855A (en) TRANSISTOR.
IT7921188A0 (en) OPTICALLY COUPLED FIELD EFFECT TRANSISTOR SWITCH.
NL7902184A (en) NITRILES.
IT7922328V0 (en) FIXING DEVICES.
NL7712933A (en) AMPLIFIER WITH FIELD EFFECT TRANSISTOR.
IT8121239A0 (en) SHORT CHANNEL FIELD EFFECT TRANSISTOR.