IT7919225A0 - FIELD EFFECT TRANSISTOR. - Google Patents

FIELD EFFECT TRANSISTOR.

Info

Publication number
IT7919225A0
IT7919225A0 IT7919225A IT1922579A IT7919225A0 IT 7919225 A0 IT7919225 A0 IT 7919225A0 IT 7919225 A IT7919225 A IT 7919225A IT 1922579 A IT1922579 A IT 1922579A IT 7919225 A0 IT7919225 A0 IT 7919225A0
Authority
IT
Italy
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Application number
IT7919225A
Other languages
Italian (it)
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Publication of IT7919225A0 publication Critical patent/IT7919225A0/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
IT7919225A 1978-01-12 1979-01-11 FIELD EFFECT TRANSISTOR. IT7919225A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB131278 1978-01-12

Publications (1)

Publication Number Publication Date
IT7919225A0 true IT7919225A0 (en) 1979-01-11

Family

ID=9719800

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7919225A IT7919225A0 (en) 1978-01-12 1979-01-11 FIELD EFFECT TRANSISTOR.

Country Status (3)

Country Link
DE (1) DE2901129A1 (en)
FR (1) FR2414795A1 (en)
IT (1) IT7919225A0 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2462027A1 (en) * 1979-07-20 1981-02-06 Labo Electronique Physique Semiconducting gallium arsenide device - comprising substrate, buffer layer and series of semiconductor layers

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2386903A1 (en) * 1977-04-08 1978-11-03 Thomson Csf FIELD EFFECT TRANSISTOR ON LARGE BAND FORBIDDEN SUPPORT

Also Published As

Publication number Publication date
DE2901129A1 (en) 1979-07-19
FR2414795A1 (en) 1979-08-10

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