IT201900022506A1 - INTEGRATED CIRCUIT OPERATING IN QUANTUM HALL EFFECT SYSTEM TO OBTAIN A PREDETERMINED STANDARD OF RESISTANCE - Google Patents

INTEGRATED CIRCUIT OPERATING IN QUANTUM HALL EFFECT SYSTEM TO OBTAIN A PREDETERMINED STANDARD OF RESISTANCE

Info

Publication number
IT201900022506A1
IT201900022506A1 IT102019000022506A IT201900022506A IT201900022506A1 IT 201900022506 A1 IT201900022506 A1 IT 201900022506A1 IT 102019000022506 A IT102019000022506 A IT 102019000022506A IT 201900022506 A IT201900022506 A IT 201900022506A IT 201900022506 A1 IT201900022506 A1 IT 201900022506A1
Authority
IT
Italy
Prior art keywords
resistance
integrated circuit
hall effect
predetermined standard
circuit operating
Prior art date
Application number
IT102019000022506A
Other languages
Italian (it)
Inventor
Stefano Roddaro
Stefan Heun
Original Assignee
Univ Pisa
Consiglio Nazionale Ricerche
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Pisa, Consiglio Nazionale Ricerche filed Critical Univ Pisa
Priority to IT102019000022506A priority Critical patent/IT201900022506A1/en
Priority to PCT/IB2020/061268 priority patent/WO2021105966A1/en
Publication of IT201900022506A1 publication Critical patent/IT201900022506A1/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R35/00—Testing or calibrating of apparatus covered by the other groups of this subclass
    • G01R35/005—Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references
    • G01R35/007—Standards or reference devices, e.g. voltage or resistance standards, "golden references"
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/14—Measuring resistance by measuring current or voltage obtained from a reference source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
IT102019000022506A 2019-11-29 2019-11-29 INTEGRATED CIRCUIT OPERATING IN QUANTUM HALL EFFECT SYSTEM TO OBTAIN A PREDETERMINED STANDARD OF RESISTANCE IT201900022506A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT102019000022506A IT201900022506A1 (en) 2019-11-29 2019-11-29 INTEGRATED CIRCUIT OPERATING IN QUANTUM HALL EFFECT SYSTEM TO OBTAIN A PREDETERMINED STANDARD OF RESISTANCE
PCT/IB2020/061268 WO2021105966A1 (en) 2019-11-29 2020-11-30 Integrated circuit configured to operate in the quantum hall effect regime for obtaining a predetermined standard of resistance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT102019000022506A IT201900022506A1 (en) 2019-11-29 2019-11-29 INTEGRATED CIRCUIT OPERATING IN QUANTUM HALL EFFECT SYSTEM TO OBTAIN A PREDETERMINED STANDARD OF RESISTANCE

Publications (1)

Publication Number Publication Date
IT201900022506A1 true IT201900022506A1 (en) 2021-05-29

Family

ID=70009148

Family Applications (1)

Application Number Title Priority Date Filing Date
IT102019000022506A IT201900022506A1 (en) 2019-11-29 2019-11-29 INTEGRATED CIRCUIT OPERATING IN QUANTUM HALL EFFECT SYSTEM TO OBTAIN A PREDETERMINED STANDARD OF RESISTANCE

Country Status (2)

Country Link
IT (1) IT201900022506A1 (en)
WO (1) WO2021105966A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114200373B (en) * 2021-12-09 2022-12-09 中国科学院上海微系统与信息技术研究所 Small quantum resistance standard device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0283278A2 (en) * 1987-03-18 1988-09-21 Fujitsu Limited Compound semiconductor device having nonalloyed ohmic contacts
US5489846A (en) * 1994-08-03 1996-02-06 United Microelectronics Corp. Magnetic-field sensor with split-drain MOSFETS

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9029866B2 (en) * 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0283278A2 (en) * 1987-03-18 1988-09-21 Fujitsu Limited Compound semiconductor device having nonalloyed ohmic contacts
US5489846A (en) * 1994-08-03 1996-02-06 United Microelectronics Corp. Magnetic-field sensor with split-drain MOSFETS

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
J.HU ET AL.: "Toward epitaxial graphene p-n junctions as electrically programmable quantum resistance standards", SCIENTIFIC REPORTS, vol. 8, 2018, pages 15018
M. MARZANO ET AL.: "On the synthesis of quantum Hall array resistance standards'", METROLOGY, vol. 52, 2015, pages 31

Also Published As

Publication number Publication date
WO2021105966A1 (en) 2021-06-03

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