IT1284881B1 - PROCEDURE FOR THE PRODUCTION OF TRICHLOROSILANE - Google Patents

PROCEDURE FOR THE PRODUCTION OF TRICHLOROSILANE

Info

Publication number
IT1284881B1
IT1284881B1 IT96RM000596A ITRM960596A IT1284881B1 IT 1284881 B1 IT1284881 B1 IT 1284881B1 IT 96RM000596 A IT96RM000596 A IT 96RM000596A IT RM960596 A ITRM960596 A IT RM960596A IT 1284881 B1 IT1284881 B1 IT 1284881B1
Authority
IT
Italy
Prior art keywords
trichlorosilane
procedure
production
Prior art date
Application number
IT96RM000596A
Other languages
Italian (it)
Inventor
Rudolf Griesshammer
Franz Koppl
Franz Schreieder
Original Assignee
Wacker Chemie Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie Gmbh filed Critical Wacker Chemie Gmbh
Publication of ITRM960596A0 publication Critical patent/ITRM960596A0/it
Publication of ITRM960596A1 publication Critical patent/ITRM960596A1/en
Application granted granted Critical
Publication of IT1284881B1 publication Critical patent/IT1284881B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
    • C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/10778—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
IT96RM000596A 1995-09-21 1996-08-27 PROCEDURE FOR THE PRODUCTION OF TRICHLOROSILANE IT1284881B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19534922A DE19534922C1 (en) 1995-09-21 1995-09-21 Prodn. of tri:chloro:silane

Publications (3)

Publication Number Publication Date
ITRM960596A0 ITRM960596A0 (en) 1996-08-27
ITRM960596A1 ITRM960596A1 (en) 1998-02-27
IT1284881B1 true IT1284881B1 (en) 1998-05-22

Family

ID=7772678

Family Applications (1)

Application Number Title Priority Date Filing Date
IT96RM000596A IT1284881B1 (en) 1995-09-21 1996-08-27 PROCEDURE FOR THE PRODUCTION OF TRICHLOROSILANE

Country Status (5)

Country Link
JP (1) JP2890253B2 (en)
KR (1) KR970015462A (en)
CA (1) CA2185981A1 (en)
DE (1) DE19534922C1 (en)
IT (1) IT1284881B1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19735378A1 (en) * 1997-08-14 1999-02-18 Wacker Chemie Gmbh Process for the production of high-purity silicon granules
KR100333351B1 (en) * 2000-04-26 2002-04-19 박종섭 Data level stabilizer
JP2005522508A (en) 2002-04-17 2005-07-28 ワツカー−ケミー　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツング Process for the production of halosilanes under microwave energy excitation
RU2471799C2 (en) * 2006-12-01 2013-01-10 Прохими Интернэшнл ЛЛС Method of producing alkoxy silanes
JP4620694B2 (en) * 2007-01-31 2011-01-26 株式会社大阪チタニウムテクノロジーズ Method for producing high purity trichlorosilane
DE102007041803A1 (en) * 2007-08-30 2009-03-05 Pv Silicon Forschungs Und Produktions Gmbh Process for producing polycrystalline silicon rods and polycrystalline silicon rod
JP4714196B2 (en) * 2007-09-05 2011-06-29 信越化学工業株式会社 Method for producing trichlorosilane and method for producing polycrystalline silicon
KR101117290B1 (en) * 2009-04-20 2012-03-20 에이디알엠테크놀로지 주식회사 Conversion reactor for making trichlorosilane gas
JP5535679B2 (en) 2010-02-18 2014-07-02 株式会社トクヤマ Method for producing trichlorosilane
JP6288626B2 (en) * 2014-08-28 2018-03-07 東亞合成株式会社 Method for producing trichlorosilane

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1935895B2 (en) * 1969-07-15 1971-06-03 Deutsche Gold und Silber Scheide anstalt vormals Roessler, 6000 Frankfurt METHOD OF MANUFACTURING SILICO CHLOROFORM
US4526769A (en) * 1983-07-18 1985-07-02 Motorola, Inc. Trichlorosilane production process

Also Published As

Publication number Publication date
CA2185981A1 (en) 1997-03-22
ITRM960596A1 (en) 1998-02-27
JP2890253B2 (en) 1999-05-10
DE19534922C1 (en) 1997-02-20
ITRM960596A0 (en) 1996-08-27
JPH09118512A (en) 1997-05-06
KR970015462A (en) 1997-04-28

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Legal Events

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0001 Granted