IT1184438B - TECHNIQUE TO REDUCE CRYSTALLOGRAPHIC DEFECTS IN A SEMICONDUCTIVE DEVICE - Google Patents

TECHNIQUE TO REDUCE CRYSTALLOGRAPHIC DEFECTS IN A SEMICONDUCTIVE DEVICE

Info

Publication number
IT1184438B
IT1184438B IT20324/85A IT2032485A IT1184438B IT 1184438 B IT1184438 B IT 1184438B IT 20324/85 A IT20324/85 A IT 20324/85A IT 2032485 A IT2032485 A IT 2032485A IT 1184438 B IT1184438 B IT 1184438B
Authority
IT
Italy
Prior art keywords
technique
semiconductive device
crystallographic defects
reduce
reduce crystallographic
Prior art date
Application number
IT20324/85A
Other languages
Italian (it)
Other versions
IT8520324A0 (en
Inventor
Lubomir Leon Jastrzebski
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT8520324A0 publication Critical patent/IT8520324A0/en
Application granted granted Critical
Publication of IT1184438B publication Critical patent/IT1184438B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
IT20324/85A 1984-04-30 1985-04-12 TECHNIQUE TO REDUCE CRYSTALLOGRAPHIC DEFECTS IN A SEMICONDUCTIVE DEVICE IT1184438B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60384884A 1984-04-30 1984-04-30

Publications (2)

Publication Number Publication Date
IT8520324A0 IT8520324A0 (en) 1985-04-12
IT1184438B true IT1184438B (en) 1987-10-28

Family

ID=24417179

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20324/85A IT1184438B (en) 1984-04-30 1985-04-12 TECHNIQUE TO REDUCE CRYSTALLOGRAPHIC DEFECTS IN A SEMICONDUCTIVE DEVICE

Country Status (6)

Country Link
JP (1) JPS60236209A (en)
DE (1) DE3514691A1 (en)
IN (1) IN162554B (en)
IT (1) IT1184438B (en)
SE (1) SE8501967L (en)
YU (1) YU45712B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4557508B2 (en) * 2003-06-16 2010-10-06 パナソニック株式会社 Semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3965453A (en) * 1974-12-27 1976-06-22 Bell Telephone Laboratories, Incorporated Piezoresistor effects in semiconductor resistors
JPS58139420A (en) * 1982-02-15 1983-08-18 Nippon Telegr & Teleph Corp <Ntt> Compound semiconductor ic substrate
JPS58162027A (en) * 1982-03-19 1983-09-26 Matsushita Electronics Corp Semiconductor wafer
JPS59167011A (en) * 1983-02-01 1984-09-20 Mitsubishi Electric Corp Semiconductor wafer

Also Published As

Publication number Publication date
SE8501967L (en) 1985-10-31
YU67185A (en) 1988-08-31
JPS60236209A (en) 1985-11-25
YU45712B (en) 1992-07-20
IT8520324A0 (en) 1985-04-12
SE8501967D0 (en) 1985-04-23
IN162554B (en) 1988-06-11
DE3514691A1 (en) 1985-10-31

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Effective date: 19970423