IT1085436B - SEMICONDUCTOR COMPONENT WITH TWO CROSS-ELEMENTARY DIODES AND WITH TRANSISTOR PROPERTIES - Google Patents
SEMICONDUCTOR COMPONENT WITH TWO CROSS-ELEMENTARY DIODES AND WITH TRANSISTOR PROPERTIESInfo
- Publication number
- IT1085436B IT1085436B IT26513/77A IT2651377A IT1085436B IT 1085436 B IT1085436 B IT 1085436B IT 26513/77 A IT26513/77 A IT 26513/77A IT 2651377 A IT2651377 A IT 2651377A IT 1085436 B IT1085436 B IT 1085436B
- Authority
- IT
- Italy
- Prior art keywords
- cross
- semiconductor component
- transistor properties
- elementary diodes
- elementary
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/705—Double base diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19762636873 DE2636873A1 (en) | 1976-08-17 | 1976-08-17 | SEMICONDUCTOR COMPONENT WITH TWO CROSSED SUB-DIODES AND WITH TRANSISTOR-LIKE PROPERTIES |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1085436B true IT1085436B (en) | 1985-05-28 |
Family
ID=5985584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT26513/77A IT1085436B (en) | 1976-08-17 | 1977-08-05 | SEMICONDUCTOR COMPONENT WITH TWO CROSS-ELEMENTARY DIODES AND WITH TRANSISTOR PROPERTIES |
Country Status (7)
Country | Link |
---|---|
US (1) | US4182965A (en) |
JP (1) | JPS5324275A (en) |
BE (1) | BE857863A (en) |
DE (1) | DE2636873A1 (en) |
FR (1) | FR2362491A1 (en) |
IT (1) | IT1085436B (en) |
NL (1) | NL7709036A (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5698864A (en) * | 1982-04-13 | 1997-12-16 | Seiko Epson Corporation | Method of manufacturing a liquid crystal device having field effect transistors |
US6294796B1 (en) * | 1982-04-13 | 2001-09-25 | Seiko Epson Corporation | Thin film transistors and active matrices including same |
FR2527385B1 (en) * | 1982-04-13 | 1987-05-22 | Suwa Seikosha Kk | THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY PANEL USING THIS TYPE OF TRANSISTOR |
US5736751A (en) * | 1982-04-13 | 1998-04-07 | Seiko Epson Corporation | Field effect transistor having thick source and drain regions |
JPS62105478A (en) * | 1985-11-01 | 1987-05-15 | 新技術開発事業団 | Semiconductor device |
JPH0348255U (en) * | 1989-09-14 | 1991-05-08 | ||
US6822267B1 (en) | 1997-08-20 | 2004-11-23 | Advantest Corporation | Signal transmission circuit, CMOS semiconductor device, and circuit board |
FR2849538A1 (en) * | 2002-12-27 | 2004-07-02 | St Microelectronics Sa | DISCRETE COMPONENT COMPRISING SERIES AND COMMON CATHODE HF DIODES |
US10615176B2 (en) | 2017-11-22 | 2020-04-07 | International Business Machine Corporation | Ferro-electric complementary FET |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE634413A (en) * | 1962-07-02 | |||
US3731123A (en) * | 1968-11-05 | 1973-05-01 | Sony Corp | Magnetic field detecting apparatus |
US3686684A (en) * | 1969-05-28 | 1972-08-22 | Sony Corp | Semiconductor circuits |
JPS501635B1 (en) * | 1969-10-06 | 1975-01-20 | ||
US3840888A (en) * | 1969-12-30 | 1974-10-08 | Ibm | Complementary mosfet device structure |
-
1976
- 1976-08-17 DE DE19762636873 patent/DE2636873A1/en not_active Withdrawn
-
1977
- 1977-08-04 FR FR7724026A patent/FR2362491A1/en active Granted
- 1977-08-05 IT IT26513/77A patent/IT1085436B/en active
- 1977-08-15 JP JP9771077A patent/JPS5324275A/en active Pending
- 1977-08-16 US US05/825,148 patent/US4182965A/en not_active Expired - Lifetime
- 1977-08-16 NL NL7709036A patent/NL7709036A/en not_active Application Discontinuation
- 1977-08-17 BE BE180234A patent/BE857863A/en unknown
Also Published As
Publication number | Publication date |
---|---|
BE857863A (en) | 1977-12-16 |
FR2362491B1 (en) | 1980-02-01 |
US4182965A (en) | 1980-01-08 |
DE2636873A1 (en) | 1978-02-23 |
JPS5324275A (en) | 1978-03-06 |
FR2362491A1 (en) | 1978-03-17 |
NL7709036A (en) | 1978-02-21 |
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