IT1084467B - Tiristore a conduzione inversa e metodo per la sua fabbricazione. - Google Patents
Tiristore a conduzione inversa e metodo per la sua fabbricazione.Info
- Publication number
- IT1084467B IT1084467B IT2214577A IT2214577A IT1084467B IT 1084467 B IT1084467 B IT 1084467B IT 2214577 A IT2214577 A IT 2214577A IT 2214577 A IT2214577 A IT 2214577A IT 1084467 B IT1084467 B IT 1084467B
- Authority
- IT
- Italy
- Prior art keywords
- thyristor
- manufacture
- conduct
- reverse
- reverse conduct
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7610265A FR2347781A1 (fr) | 1976-04-08 | 1976-04-08 | Thyristor a conduction inverse |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1084467B true IT1084467B (it) | 1985-05-25 |
Family
ID=9171563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT2214577A IT1084467B (it) | 1976-04-08 | 1977-04-05 | Tiristore a conduzione inversa e metodo per la sua fabbricazione. |
Country Status (7)
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57109372A (en) * | 1980-12-25 | 1982-07-07 | Mitsubishi Electric Corp | Semiconductor device |
| FR2524715A1 (fr) * | 1982-03-30 | 1983-10-07 | Thomson Csf | Diode rapide |
| US4572375A (en) * | 1984-11-26 | 1986-02-25 | Baer Carl D | Container for dispersant |
-
1976
- 1976-04-08 FR FR7610265A patent/FR2347781A1/fr active Granted
-
1977
- 1977-03-23 CH CH364177A patent/CH600574A5/xx not_active IP Right Cessation
- 1977-03-24 BE BE1008044A patent/BE852825A/xx unknown
- 1977-03-25 GB GB1272677A patent/GB1515260A/en not_active Expired
- 1977-04-05 DE DE19772715206 patent/DE2715206A1/de not_active Withdrawn
- 1977-04-05 NL NL7703747A patent/NL7703747A/xx not_active Application Discontinuation
- 1977-04-05 IT IT2214577A patent/IT1084467B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| DE2715206A1 (de) | 1977-10-20 |
| GB1515260A (en) | 1978-06-21 |
| BE852825A (fr) | 1977-09-26 |
| FR2347781B1 (US20030204162A1-20031030-M00001.png) | 1979-10-05 |
| CH600574A5 (US20030204162A1-20031030-M00001.png) | 1978-06-15 |
| FR2347781A1 (fr) | 1977-11-04 |
| NL7703747A (nl) | 1977-10-11 |
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