IT1082079B - MULTIVIBRATOR CIRCUIT - Google Patents
MULTIVIBRATOR CIRCUITInfo
- Publication number
- IT1082079B IT1082079B IT2377377A IT2377377A IT1082079B IT 1082079 B IT1082079 B IT 1082079B IT 2377377 A IT2377377 A IT 2377377A IT 2377377 A IT2377377 A IT 2377377A IT 1082079 B IT1082079 B IT 1082079B
- Authority
- IT
- Italy
- Prior art keywords
- multivibrator circuit
- multivibrator
- circuit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
- H03K3/0231—Astable circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0626—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a localised breakdown region, e.g. built-in avalanching region
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electronic Switches (AREA)
- Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2120876 | 1976-05-21 | ||
GB21165/76A GB1575906A (en) | 1976-05-21 | 1976-05-21 | Multivibrator circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1082079B true IT1082079B (en) | 1985-05-21 |
Family
ID=26255187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT2377377A IT1082079B (en) | 1976-05-21 | 1977-05-19 | MULTIVIBRATOR CIRCUIT |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE2722660C3 (en) |
FR (1) | FR2352443A1 (en) |
IT (1) | IT1082079B (en) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3050639A (en) * | 1958-10-30 | 1962-08-21 | Ibm | Single shot multivibrator with pulse width control |
-
1977
- 1977-05-18 DE DE19772722660 patent/DE2722660C3/en not_active Expired
- 1977-05-19 IT IT2377377A patent/IT1082079B/en active
- 1977-05-20 FR FR7715549A patent/FR2352443A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
DE2722660A1 (en) | 1977-11-24 |
FR2352443B1 (en) | 1982-04-23 |
FR2352443A1 (en) | 1977-12-16 |
DE2722660B2 (en) | 1978-12-14 |
DE2722660C3 (en) | 1979-08-30 |
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