IT1057587B - DICDO ZENER AT COMPENSATED TEMPERATURE - Google Patents

DICDO ZENER AT COMPENSATED TEMPERATURE

Info

Publication number
IT1057587B
IT1057587B IT21233/76A IT2123376A IT1057587B IT 1057587 B IT1057587 B IT 1057587B IT 21233/76 A IT21233/76 A IT 21233/76A IT 2123376 A IT2123376 A IT 2123376A IT 1057587 B IT1057587 B IT 1057587B
Authority
IT
Italy
Prior art keywords
dicdo
zener
compensated temperature
compensated
temperature
Prior art date
Application number
IT21233/76A
Other languages
Italian (it)
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Application granted granted Critical
Publication of IT1057587B publication Critical patent/IT1057587B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
IT21233/76A 1975-03-21 1976-03-16 DICDO ZENER AT COMPENSATED TEMPERATURE IT1057587B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752512383 DE2512383A1 (en) 1975-03-21 1975-03-21 TEMPERATURE COMPENSATED ZENER DIODE

Publications (1)

Publication Number Publication Date
IT1057587B true IT1057587B (en) 1982-03-30

Family

ID=5941995

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21233/76A IT1057587B (en) 1975-03-21 1976-03-16 DICDO ZENER AT COMPENSATED TEMPERATURE

Country Status (3)

Country Link
DE (1) DE2512383A1 (en)
FR (1) FR2305028A1 (en)
IT (1) IT1057587B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2838605A1 (en) * 1978-09-05 1980-03-06 Bosch Gmbh Robert Planar semiconductor diode with diffusion zone metallised contact - has second silicon oxide layer with window with metal coating including aluminium and nickel films
FR2608320A1 (en) * 1986-12-16 1988-06-17 Thomson Semiconducteurs DEVICE FOR PROTECTING AGAINST LOW CAPACITY OVERVOLTAGES

Also Published As

Publication number Publication date
DE2512383A1 (en) 1976-09-23
FR2305028B3 (en) 1978-12-15
FR2305028A1 (en) 1976-10-15

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