IT1042692B - PERFECTED MEMORY CELL - Google Patents

PERFECTED MEMORY CELL

Info

Publication number
IT1042692B
IT1042692B IT27414/75A IT2741475A IT1042692B IT 1042692 B IT1042692 B IT 1042692B IT 27414/75 A IT27414/75 A IT 27414/75A IT 2741475 A IT2741475 A IT 2741475A IT 1042692 B IT1042692 B IT 1042692B
Authority
IT
Italy
Prior art keywords
perfected
memory cell
cell
memory
perfected memory
Prior art date
Application number
IT27414/75A
Other languages
Italian (it)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1042692B publication Critical patent/IT1042692B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H03K3/352—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region the devices being thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
IT27414/75A 1974-11-11 1975-09-19 PERFECTED MEMORY CELL IT1042692B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US522659A US3918033A (en) 1974-11-11 1974-11-11 SCR memory cell

Publications (1)

Publication Number Publication Date
IT1042692B true IT1042692B (en) 1980-01-30

Family

ID=24081783

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27414/75A IT1042692B (en) 1974-11-11 1975-09-19 PERFECTED MEMORY CELL

Country Status (7)

Country Link
US (1) US3918033A (en)
JP (1) JPS574998B2 (en)
CA (1) CA1058320A (en)
DE (1) DE2545921A1 (en)
FR (1) FR2290731A1 (en)
GB (1) GB1521099A (en)
IT (1) IT1042692B (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4031413A (en) * 1975-01-10 1977-06-21 Hitachi, Ltd. Memory circuit
JPS582435B2 (en) * 1975-08-09 1983-01-17 株式会社日立製作所 Kioku Cairo
JPS52153630A (en) * 1976-06-16 1977-12-20 Matsushita Electric Ind Co Ltd Semiconductor memory device
FR2364528A1 (en) * 1976-09-10 1978-04-07 Thomson Csf MEMORY CELL WITH TETRODE TRANSISTOR AND MEMORY CIRCUIT INCLUDING SUCH CELLS
US4409673A (en) * 1980-12-31 1983-10-11 Ibm Corporation Single isolation cell for DC stable memory
GB2247550B (en) * 1990-06-29 1994-08-03 Digital Equipment Corp Bipolar transistor memory cell and method
DE4041260A1 (en) * 1990-12-21 1992-07-02 Messerschmitt Boelkow Blohm READING CIRCUIT FOR A STATIC STORAGE CELL
US6229161B1 (en) * 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
US6690038B1 (en) 1999-06-05 2004-02-10 T-Ram, Inc. Thyristor-based device over substrate surface
US6727528B1 (en) 2001-03-22 2004-04-27 T-Ram, Inc. Thyristor-based device including trench dielectric isolation for thyristor-body regions
US7456439B1 (en) 2001-03-22 2008-11-25 T-Ram Semiconductor, Inc. Vertical thyristor-based memory with trench isolation and its method of fabrication
WO2002082504A2 (en) * 2001-04-05 2002-10-17 T-Ram, Inc. Data restore in thyristor-based memory
US6804162B1 (en) 2001-04-05 2004-10-12 T-Ram, Inc. Read-modify-write memory using read-or-write banks
US6576959B2 (en) * 2001-04-10 2003-06-10 Texas Instruments Incorporated Device and method of low voltage SCR protection for high voltage failsafe ESD applications
US6583452B1 (en) 2001-12-17 2003-06-24 T-Ram, Inc. Thyristor-based device having extended capacitive coupling
US6832300B2 (en) 2002-03-20 2004-12-14 Hewlett-Packard Development Company, L.P. Methods and apparatus for control of asynchronous cache
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6865407B2 (en) * 2002-07-11 2005-03-08 Optical Sensors, Inc. Calibration technique for non-invasive medical devices
US6917078B2 (en) * 2002-08-30 2005-07-12 Micron Technology Inc. One transistor SOI non-volatile random access memory cell
US6888200B2 (en) * 2002-08-30 2005-05-03 Micron Technology Inc. One transistor SOI non-volatile random access memory cell
US6903969B2 (en) * 2002-08-30 2005-06-07 Micron Technology Inc. One-device non-volatile random access memory cell
US7042027B2 (en) * 2002-08-30 2006-05-09 Micron Technology, Inc. Gated lateral thyristor-based random access memory cell (GLTRAM)
US6690039B1 (en) * 2002-10-01 2004-02-10 T-Ram, Inc. Thyristor-based device that inhibits undesirable conductive channel formation
US8125003B2 (en) * 2003-07-02 2012-02-28 Micron Technology, Inc. High-performance one-transistor memory cell
US6944051B1 (en) 2003-10-29 2005-09-13 T-Ram, Inc. Data restore in thryistor based memory devices
US7145186B2 (en) 2004-08-24 2006-12-05 Micron Technology, Inc. Memory cell with trenched gated thyristor
US7781797B2 (en) * 2006-06-29 2010-08-24 International Business Machines Corporation One-transistor static random access memory with integrated vertical PNPN device
US8035126B2 (en) * 2007-10-29 2011-10-11 International Business Machines Corporation One-transistor static random access memory with integrated vertical PNPN device
US7940560B2 (en) * 2008-05-29 2011-05-10 Advanced Micro Devices, Inc. Memory cells, memory devices and integrated circuits incorporating the same
KR102226206B1 (en) * 2020-02-06 2021-03-11 포항공과대학교 산학협력단 Memory device including double PN junctions and driving method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3375502A (en) * 1964-11-10 1968-03-26 Litton Systems Inc Dynamic memory using controlled semiconductors
US3540002A (en) * 1968-02-26 1970-11-10 Ibm Content addressable memory
US3697962A (en) * 1970-11-27 1972-10-10 Ibm Two device monolithic bipolar memory array

Also Published As

Publication number Publication date
JPS574998B2 (en) 1982-01-28
US3918033A (en) 1975-11-04
JPS5171035A (en) 1976-06-19
FR2290731B1 (en) 1978-04-07
DE2545921A1 (en) 1976-05-13
GB1521099A (en) 1978-08-09
CA1058320A (en) 1979-07-10
FR2290731A1 (en) 1976-06-04

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