IT1012257B - SEMICONDUCTOR DEVICE - Google Patents

SEMICONDUCTOR DEVICE

Info

Publication number
IT1012257B
IT1012257B IT2257074A IT2257074A IT1012257B IT 1012257 B IT1012257 B IT 1012257B IT 2257074 A IT2257074 A IT 2257074A IT 2257074 A IT2257074 A IT 2257074A IT 1012257 B IT1012257 B IT 1012257B
Authority
IT
Italy
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
IT2257074A
Other languages
Italian (it)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of IT1012257B publication Critical patent/IT1012257B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
IT2257074A 1973-05-12 1974-05-10 SEMICONDUCTOR DEVICE IT1012257B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5290673A JPS568501B2 (en) 1973-05-12 1973-05-12

Publications (1)

Publication Number Publication Date
IT1012257B true IT1012257B (en) 1977-03-10

Family

ID=12927870

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2257074A IT1012257B (en) 1973-05-12 1974-05-10 SEMICONDUCTOR DEVICE

Country Status (5)

Country Link
JP (1) JPS568501B2 (en)
DE (1) DE2423114A1 (en)
FR (1) FR2229141B3 (en)
IT (1) IT1012257B (en)
NL (1) NL7406423A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55125663A (en) * 1979-03-22 1980-09-27 Hitachi Ltd Semiconductor integrated circuit
DE2929869C2 (en) * 1979-07-24 1986-04-30 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithic integrated CMOS inverter circuitry
US4253105A (en) * 1980-07-03 1981-02-24 Rca Corporation Semiconductor power device incorporating a schottky barrier diode between base and emitter of a PNP device
JPH0714023B2 (en) * 1986-09-29 1995-02-15 松下電子工業株式会社 Semiconductor device
CN105957886B (en) * 2016-06-28 2019-05-14 中国科学院微电子研究所 A kind of silicon carbide bipolar junction transistor

Also Published As

Publication number Publication date
FR2229141A1 (en) 1974-12-06
JPS503579A (en) 1975-01-14
NL7406423A (en) 1974-11-14
FR2229141B3 (en) 1977-03-11
DE2423114A1 (en) 1974-11-28
JPS568501B2 (en) 1981-02-24

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