IT1004087B - Metodo per produrre un dispositivo al fosfuro di gallio per emissione di luce verde - Google Patents
Metodo per produrre un dispositivo al fosfuro di gallio per emissione di luce verdeInfo
- Publication number
- IT1004087B IT1004087B IT50030/74A IT5003074A IT1004087B IT 1004087 B IT1004087 B IT 1004087B IT 50030/74 A IT50030/74 A IT 50030/74A IT 5003074 A IT5003074 A IT 5003074A IT 1004087 B IT1004087 B IT 1004087B
- Authority
- IT
- Italy
- Prior art keywords
- producing
- light emission
- green light
- gallium phosphide
- phosphide device
- Prior art date
Links
- 229910005540 GaP Inorganic materials 0.000 title 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3848373A JPS5325634B2 (US07534539-20090519-C00280.png) | 1973-04-04 | 1973-04-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1004087B true IT1004087B (it) | 1976-07-10 |
Family
ID=12526490
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT50030/74A IT1004087B (it) | 1973-04-04 | 1974-04-03 | Metodo per produrre un dispositivo al fosfuro di gallio per emissione di luce verde |
Country Status (7)
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4154630A (en) * | 1975-01-07 | 1979-05-15 | U.S. Philips Corporation | Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process |
FR2297494A1 (fr) * | 1975-01-07 | 1976-08-06 | Radiotechnique Compelec | Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriques |
JPS5596629A (en) * | 1979-01-17 | 1980-07-23 | Matsushita Electric Ind Co Ltd | Method of epitaxially growing in liquid phase |
US5707891A (en) * | 1989-04-28 | 1998-01-13 | Sharp Kabushiki Kaisha | Method of manufacturing a light emitting diode |
US5652178A (en) * | 1989-04-28 | 1997-07-29 | Sharp Kabushiki Kaisha | Method of manufacturing a light emitting diode using LPE at different temperatures |
CN113750951B (zh) * | 2021-09-14 | 2023-08-22 | 东莞理工学院 | 一种具备高效选择性的氮化磷制备方法及在除铀污染及海水提铀中的应用 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3617820A (en) * | 1966-11-18 | 1971-11-02 | Monsanto Co | Injection-luminescent diodes |
US3462320A (en) * | 1966-11-21 | 1969-08-19 | Bell Telephone Labor Inc | Solution growth of nitrogen doped gallium phosphide |
US3603833A (en) * | 1970-02-16 | 1971-09-07 | Bell Telephone Labor Inc | Electroluminescent junction semiconductor with controllable combination colors |
US3646406A (en) * | 1970-06-30 | 1972-02-29 | Bell Telephone Labor Inc | Electroluminescent pnjunction diodes with nonuniform distribution of isoelectronic traps |
GB1332994A (en) * | 1971-01-11 | 1973-10-10 | Mullard Ltd | Method of diffusing an impurity into a semiconductor body |
US3725749A (en) * | 1971-06-30 | 1973-04-03 | Monsanto Co | GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES |
JPS4984385A (US07534539-20090519-C00280.png) * | 1972-12-18 | 1974-08-13 |
-
1973
- 1973-04-04 JP JP3848373A patent/JPS5325634B2/ja not_active Expired
-
1974
- 1974-04-03 US US05/457,649 patent/US3935039A/en not_active Expired - Lifetime
- 1974-04-03 IT IT50030/74A patent/IT1004087B/it active
- 1974-04-04 CA CA196,795A patent/CA1022440A/en not_active Expired
- 1974-04-04 DE DE2416394A patent/DE2416394C3/de not_active Expired
- 1974-04-04 FR FR7412008A patent/FR2224876B1/fr not_active Expired
- 1974-04-04 GB GB1494074A patent/GB1427484A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2416394A1 (de) | 1974-10-17 |
US3935039A (en) | 1976-01-27 |
DE2416394C3 (de) | 1985-03-14 |
GB1427484A (en) | 1976-03-10 |
JPS5325634B2 (US07534539-20090519-C00280.png) | 1978-07-27 |
JPS49126288A (US07534539-20090519-C00280.png) | 1974-12-03 |
DE2416394B2 (de) | 1980-01-10 |
FR2224876B1 (US07534539-20090519-C00280.png) | 1978-01-13 |
CA1022440A (en) | 1977-12-13 |
FR2224876A1 (US07534539-20090519-C00280.png) | 1974-10-31 |
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