IT1004087B - Metodo per produrre un dispositivo al fosfuro di gallio per emissione di luce verde - Google Patents

Metodo per produrre un dispositivo al fosfuro di gallio per emissione di luce verde

Info

Publication number
IT1004087B
IT1004087B IT50030/74A IT5003074A IT1004087B IT 1004087 B IT1004087 B IT 1004087B IT 50030/74 A IT50030/74 A IT 50030/74A IT 5003074 A IT5003074 A IT 5003074A IT 1004087 B IT1004087 B IT 1004087B
Authority
IT
Italy
Prior art keywords
producing
light emission
green light
gallium phosphide
phosphide device
Prior art date
Application number
IT50030/74A
Other languages
English (en)
Italian (it)
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Application granted granted Critical
Publication of IT1004087B publication Critical patent/IT1004087B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02387Group 13/15 materials
    • H01L21/02392Phosphides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02455Group 13/15 materials
    • H01L21/02461Phosphides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02543Phosphides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02576N-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02628Liquid deposition using solutions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00Compositions
    • Y10S252/95Doping agent source material

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT50030/74A 1973-04-04 1974-04-03 Metodo per produrre un dispositivo al fosfuro di gallio per emissione di luce verde IT1004087B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3848373A JPS5325634B2 (US07534539-20090519-C00280.png) 1973-04-04 1973-04-04

Publications (1)

Publication Number Publication Date
IT1004087B true IT1004087B (it) 1976-07-10

Family

ID=12526490

Family Applications (1)

Application Number Title Priority Date Filing Date
IT50030/74A IT1004087B (it) 1973-04-04 1974-04-03 Metodo per produrre un dispositivo al fosfuro di gallio per emissione di luce verde

Country Status (7)

Country Link
US (1) US3935039A (US07534539-20090519-C00280.png)
JP (1) JPS5325634B2 (US07534539-20090519-C00280.png)
CA (1) CA1022440A (US07534539-20090519-C00280.png)
DE (1) DE2416394C3 (US07534539-20090519-C00280.png)
FR (1) FR2224876B1 (US07534539-20090519-C00280.png)
GB (1) GB1427484A (US07534539-20090519-C00280.png)
IT (1) IT1004087B (US07534539-20090519-C00280.png)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4154630A (en) * 1975-01-07 1979-05-15 U.S. Philips Corporation Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process
FR2297494A1 (fr) * 1975-01-07 1976-08-06 Radiotechnique Compelec Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriques
JPS5596629A (en) * 1979-01-17 1980-07-23 Matsushita Electric Ind Co Ltd Method of epitaxially growing in liquid phase
US5707891A (en) * 1989-04-28 1998-01-13 Sharp Kabushiki Kaisha Method of manufacturing a light emitting diode
US5652178A (en) * 1989-04-28 1997-07-29 Sharp Kabushiki Kaisha Method of manufacturing a light emitting diode using LPE at different temperatures
CN113750951B (zh) * 2021-09-14 2023-08-22 东莞理工学院 一种具备高效选择性的氮化磷制备方法及在除铀污染及海水提铀中的应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3617820A (en) * 1966-11-18 1971-11-02 Monsanto Co Injection-luminescent diodes
US3462320A (en) * 1966-11-21 1969-08-19 Bell Telephone Labor Inc Solution growth of nitrogen doped gallium phosphide
US3603833A (en) * 1970-02-16 1971-09-07 Bell Telephone Labor Inc Electroluminescent junction semiconductor with controllable combination colors
US3646406A (en) * 1970-06-30 1972-02-29 Bell Telephone Labor Inc Electroluminescent pnjunction diodes with nonuniform distribution of isoelectronic traps
GB1332994A (en) * 1971-01-11 1973-10-10 Mullard Ltd Method of diffusing an impurity into a semiconductor body
US3725749A (en) * 1971-06-30 1973-04-03 Monsanto Co GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES
JPS4984385A (US07534539-20090519-C00280.png) * 1972-12-18 1974-08-13

Also Published As

Publication number Publication date
DE2416394A1 (de) 1974-10-17
US3935039A (en) 1976-01-27
DE2416394C3 (de) 1985-03-14
GB1427484A (en) 1976-03-10
JPS5325634B2 (US07534539-20090519-C00280.png) 1978-07-27
JPS49126288A (US07534539-20090519-C00280.png) 1974-12-03
DE2416394B2 (de) 1980-01-10
FR2224876B1 (US07534539-20090519-C00280.png) 1978-01-13
CA1022440A (en) 1977-12-13
FR2224876A1 (US07534539-20090519-C00280.png) 1974-10-31

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