IN2015DN04170A - - Google Patents

Info

Publication number
IN2015DN04170A
IN2015DN04170A IN4170DEN2015A IN2015DN04170A IN 2015DN04170 A IN2015DN04170 A IN 2015DN04170A IN 4170DEN2015 A IN4170DEN2015 A IN 4170DEN2015A IN 2015DN04170 A IN2015DN04170 A IN 2015DN04170A
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Russell Alan Morgan
Original Assignee
Bae Systems Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB1220767.6A external-priority patent/GB2508011A/en
Priority claimed from EP12275176.1A external-priority patent/EP2733507A1/fr
Application filed by Bae Systems Plc filed Critical Bae Systems Plc
Publication of IN2015DN04170A publication Critical patent/IN2015DN04170A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/1808—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only Ge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
IN4170DEN2015 2012-11-19 2015-05-15 IN2015DN04170A (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1220767.6A GB2508011A (en) 2012-11-19 2012-11-19 Radiation detectors and methods of manufacture
EP12275176.1A EP2733507A1 (fr) 2012-11-19 2012-11-19 Détecteurs de rayonnement et procédés de fabrication de détecteurs de rayonnement
PCT/GB2013/053021 WO2014076492A1 (fr) 2012-11-19 2013-11-15 Détecteurs de rayonnement et procédés de fabrication de détecteurs de rayonnement

Publications (1)

Publication Number Publication Date
IN2015DN04170A true IN2015DN04170A (fr) 2015-10-16

Family

ID=49622846

Family Applications (1)

Application Number Title Priority Date Filing Date
IN4170DEN2015 IN2015DN04170A (fr) 2012-11-19 2015-05-15

Country Status (6)

Country Link
US (1) US9748306B2 (fr)
EP (1) EP2920611A1 (fr)
AU (1) AU2013346517C1 (fr)
BR (1) BR112015011272A2 (fr)
IN (1) IN2015DN04170A (fr)
WO (1) WO2014076492A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR112015011272A2 (pt) 2012-11-19 2017-07-11 Bae Systems Plc detector de radiação, e, métodos para fabricar um detector de radiação e para usinar características de alta razão de aspecto profundas em um substrato
CN108063168B (zh) * 2017-12-14 2020-03-06 中国科学院微电子研究所 基于应变调控的Ge光电探测器及其制作方法
CN110137275B (zh) * 2019-05-29 2021-06-08 中国科学院微电子研究所 一种红外吸收薄膜结构及制作方法及其电子设备
US20230066466A1 (en) * 2021-08-27 2023-03-02 Taiwan Semiconductor Manufacturing Company Limited Photodetector with reduced dark current sensitivity and methods of forming the same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10016340C1 (de) * 2000-03-31 2001-12-06 Promos Technologies Inc Verfahren zur Herstellung von flaschenförmigen Tiefgräben zur Verwendung in Halbleitervorrichtungen
US7388201B2 (en) 2005-05-13 2008-06-17 National University Of Singapore Radiation detector having coated nanostructure and method
US20080110486A1 (en) * 2006-11-15 2008-05-15 General Electric Company Amorphous-crystalline tandem nanostructured solar cells
EP1967869A1 (fr) 2007-03-09 2008-09-10 Services Pétroliers Schlumberger Détecteur de rayonnement gamma en nanograss
FR2923602B1 (fr) * 2007-11-12 2009-11-20 Commissariat Energie Atomique Detecteur de rayonnement electromagnetique a thermometre a nanofil et procede de realisation
WO2010011859A2 (fr) 2008-07-24 2010-01-28 The Regents Of The University Of California Détecteurs de neutrons à semi-conducteur en couches
WO2011031959A1 (fr) * 2009-09-11 2011-03-17 Jp Laboratories, Inc. Dispositifs et processus de contrôle basés sur la transformation, la destruction et la conversion de nanostructures
WO2011047359A2 (fr) * 2009-10-16 2011-04-21 Cornell University Procédé et appareil comportant une structure à nanofils
US8568877B2 (en) * 2010-03-09 2013-10-29 Board Of Regents Of The University Of Texas System Porous and non-porous nanostructures
US8659037B2 (en) * 2010-06-08 2014-02-25 Sundiode Inc. Nanostructure optoelectronic device with independently controllable junctions
US8319175B2 (en) 2010-08-31 2012-11-27 Schlumberger Technology Corporation Nano-tips based gas ionization chamber for neutron detection
TW201216354A (en) * 2010-10-05 2012-04-16 Univ Nat Taiwan Science Tech Method for etching high-aspect-ratio features
US9075148B2 (en) * 2011-03-22 2015-07-07 Savannah River Nuclear Solutions, Llc Nano structural anodes for radiation detectors
BR112015011272A2 (pt) 2012-11-19 2017-07-11 Bae Systems Plc detector de radiação, e, métodos para fabricar um detector de radiação e para usinar características de alta razão de aspecto profundas em um substrato

Also Published As

Publication number Publication date
BR112015011272A2 (pt) 2017-07-11
AU2013346517B2 (en) 2017-09-14
AU2013346517C1 (en) 2018-03-01
EP2920611A1 (fr) 2015-09-23
US20150295008A1 (en) 2015-10-15
US9748306B2 (en) 2017-08-29
AU2013346517A1 (en) 2015-05-28
WO2014076492A1 (fr) 2014-05-22

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