IN2014DN08079A - - Google Patents
Info
- Publication number
- IN2014DN08079A IN2014DN08079A IN8079DEN2014A IN2014DN08079A IN 2014DN08079 A IN2014DN08079 A IN 2014DN08079A IN 8079DEN2014 A IN8079DEN2014 A IN 8079DEN2014A IN 2014DN08079 A IN2014DN08079 A IN 2014DN08079A
- Authority
- IN
- India
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012205378A DE102012205378A1 (en) | 2012-04-02 | 2012-04-02 | Process for the production of thin-film solar modules and thin-film solar modules obtainable by this process |
PCT/EP2013/053111 WO2013149751A1 (en) | 2012-04-02 | 2013-02-15 | Method for producing thin-film solar modules and thin-film solar modules which are obtainable according to said method |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2014DN08079A true IN2014DN08079A (en) | 2015-05-01 |
Family
ID=47750644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN8079DEN2014 IN2014DN08079A (en) | 2012-04-02 | 2014-09-26 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20150068578A1 (en) |
EP (1) | EP2834855B1 (en) |
JP (1) | JP2015514323A (en) |
KR (1) | KR20140147831A (en) |
CN (2) | CN109994563A (en) |
AU (1) | AU2013242984A1 (en) |
DE (1) | DE102012205378A1 (en) |
IN (1) | IN2014DN08079A (en) |
WO (1) | WO2013149751A1 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016007326A1 (en) * | 2014-07-07 | 2016-01-14 | NuvoSun, Inc. | Protective conductive coating for the backside of thin film solar cell devices with chalcogenide-containing absorbers |
CN104993013B (en) * | 2015-05-25 | 2017-12-19 | 北京四方继保自动化股份有限公司 | A kind of full laser grooving and scribing method of large area CIGS Thinfilm solar cell assembly |
KR20170030311A (en) * | 2015-09-09 | 2017-03-17 | 주식회사 무한 | A thin film type solar cell and Method of manufacturing the same |
CN105405904A (en) * | 2015-11-10 | 2016-03-16 | 中建材光电装备(太仓)有限公司 | Method for controlling reaction of molybdenum and selenium in high temperature selenylation process of CIG metal prefabricated layer and CIGS thin-film solar cell |
CN106571410A (en) * | 2016-10-17 | 2017-04-19 | 北京四方创能光电科技有限公司 | Full-laser scribing method for flexible stainless steel substrate solar cell module |
EP3493274A1 (en) * | 2017-12-04 | 2019-06-05 | Bengbu Design & Research Institute for Glass Industry | Thin film solar module with improved shunt resistor |
JP6592639B1 (en) * | 2018-03-23 | 2019-10-16 | 積水化学工業株式会社 | SOLAR CELL MANUFACTURING METHOD AND SOLAR CELL |
CN111566822A (en) * | 2018-03-27 | 2020-08-21 | 积水化学工业株式会社 | Method for manufacturing solar cell and solar cell |
CN111463315B (en) * | 2019-08-26 | 2021-08-20 | 杭州纤纳光电科技有限公司 | Solar cell cutting and passivating integrated processing method and solar cell thereof |
KR102077768B1 (en) * | 2019-12-16 | 2020-02-17 | 한국과학기술연구원 | Thin-Film Solar Cell Module Structure and Method for Producing the Same |
EP3869568A1 (en) * | 2020-02-20 | 2021-08-25 | NICE Solar Energy GmbH | Method of patterning a thin-film photovoltaic layer stack |
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US4783421A (en) * | 1985-04-15 | 1988-11-08 | Solarex Corporation | Method for manufacturing electrical contacts for a thin-film semiconductor device |
EP0536431B1 (en) * | 1991-10-07 | 1994-11-30 | Siemens Aktiengesellschaft | Method for working a thin film device by laser |
DE4442824C1 (en) * | 1994-12-01 | 1996-01-25 | Siemens Ag | Solar cell having higher degree of activity |
FR2820241B1 (en) * | 2001-01-31 | 2003-09-19 | Saint Gobain | TRANSPARENT SUBSTRATE PROVIDED WITH AN ELECTRODE |
US6690041B2 (en) * | 2002-05-14 | 2004-02-10 | Global Solar Energy, Inc. | Monolithically integrated diodes in thin-film photovoltaic devices |
DK1654769T4 (en) * | 2003-08-14 | 2018-05-22 | Univ Johannesburg | PROCEDURE FOR MANUFACTURING QUATERNARY OR HIGHER ALloy semiconductor films from groups IB-IIIA-VIA |
SE0400631D0 (en) * | 2004-03-11 | 2004-03-11 | Forskarpatent I Uppsala Ab | Thin film solar cell and manufacturing method |
JP2006080371A (en) * | 2004-09-10 | 2006-03-23 | Matsushita Electric Ind Co Ltd | Solar cell and its manufacturing method |
US7732229B2 (en) * | 2004-09-18 | 2010-06-08 | Nanosolar, Inc. | Formation of solar cells with conductive barrier layers and foil substrates |
JP4925724B2 (en) * | 2006-05-25 | 2012-05-09 | 本田技研工業株式会社 | Solar cell and method for manufacturing the same |
JP4439492B2 (en) * | 2006-05-25 | 2010-03-24 | 本田技研工業株式会社 | Chalcopyrite solar cell and method for manufacturing the same |
TW200832726A (en) * | 2006-11-10 | 2008-08-01 | Solopower Inc | Reel-to-reel reaction of precursor film to form solar cell absorber |
WO2008074879A2 (en) * | 2006-12-21 | 2008-06-26 | Helianthos B.V. | Method for making solar sub-cells from a solar cell |
US20100300352A1 (en) * | 2007-10-17 | 2010-12-02 | Yann Roussillon | Solution deposition assembly |
AT10578U1 (en) * | 2007-12-18 | 2009-06-15 | Plansee Metall Gmbh | DUNGOUS SOLAR CELL WITH MOLYBDAN-CONTAINING ELECTRODE LAYER |
US7851698B2 (en) * | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
JP5180781B2 (en) * | 2008-11-05 | 2013-04-10 | 三菱重工業株式会社 | Method for manufacturing photoelectric conversion device and photoelectric conversion device |
JP2010114190A (en) * | 2008-11-05 | 2010-05-20 | Mitsubishi Heavy Ind Ltd | Method of manufacturing photoelectric conversion device, and photoelectric conversion device |
EP2200097A1 (en) * | 2008-12-16 | 2010-06-23 | Saint-Gobain Glass France S.A. | Method of manufacturing a photovoltaic device and system for patterning an object |
TW201025632A (en) * | 2008-12-19 | 2010-07-01 | Nexpower Technology Corp | Thin film solar cell and manufacturing method thereof |
JP2010251428A (en) * | 2009-04-13 | 2010-11-04 | Mitsubishi Heavy Ind Ltd | Photoelectric conversion device manufacturing method, photoelectric conversion device manufacturing device, and photoelectric conversion device |
US20100279458A1 (en) * | 2009-04-29 | 2010-11-04 | Du Pont Apollo Ltd. | Process for making partially transparent photovoltaic modules |
KR101028971B1 (en) * | 2009-05-26 | 2011-04-19 | 한국과학기술원 | Intergrated Thin-Film Solar Cell and Manufacturing method thereof |
DE102009041905B4 (en) * | 2009-09-20 | 2013-08-22 | Solarion Ag Photovoltaik | Method for the serial connection of thin-film solar cells |
GB2474665B (en) * | 2009-10-22 | 2011-10-12 | M Solv Ltd | Method and apparatus for dividing thin film device into separate cells |
JP2011129564A (en) * | 2009-12-15 | 2011-06-30 | Fujifilm Corp | Coating film forming photoelectric conversion semiconductor film, method of manufacturing the same, photoelectric conversion semiconductor film, photoelectric conversion device, and solar cell |
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KR101210168B1 (en) * | 2010-03-24 | 2012-12-07 | 엘지이노텍 주식회사 | Solar cell apparatus and method of fabricating the same |
JP2011222666A (en) * | 2010-04-07 | 2011-11-04 | Sharp Corp | Method of manufacturing thin-film solar cell |
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US20130174900A1 (en) * | 2011-07-07 | 2013-07-11 | Stion Corporation | Nanowire enhanced transparent conductive oxide for thin film photovoltaic devices |
-
2012
- 2012-04-02 DE DE102012205378A patent/DE102012205378A1/en not_active Withdrawn
-
2013
- 2013-02-15 CN CN201811570245.2A patent/CN109994563A/en active Pending
- 2013-02-15 AU AU2013242984A patent/AU2013242984A1/en not_active Abandoned
- 2013-02-15 JP JP2015503791A patent/JP2015514323A/en active Pending
- 2013-02-15 CN CN201380028761.1A patent/CN104335364A/en active Pending
- 2013-02-15 EP EP13706211.3A patent/EP2834855B1/en active Active
- 2013-02-15 US US14/389,208 patent/US20150068578A1/en not_active Abandoned
- 2013-02-15 KR KR1020147027723A patent/KR20140147831A/en not_active Application Discontinuation
- 2013-02-15 WO PCT/EP2013/053111 patent/WO2013149751A1/en active Application Filing
-
2014
- 2014-09-26 IN IN8079DEN2014 patent/IN2014DN08079A/en unknown
Also Published As
Publication number | Publication date |
---|---|
EP2834855A1 (en) | 2015-02-11 |
WO2013149751A1 (en) | 2013-10-10 |
AU2013242984A1 (en) | 2014-11-20 |
CN109994563A (en) | 2019-07-09 |
JP2015514323A (en) | 2015-05-18 |
CN104335364A (en) | 2015-02-04 |
KR20140147831A (en) | 2014-12-30 |
DE102012205378A1 (en) | 2013-10-02 |
EP2834855B1 (en) | 2019-08-21 |
US20150068578A1 (en) | 2015-03-12 |