IN2014DN07860A - - Google Patents

Info

Publication number
IN2014DN07860A
IN2014DN07860A IN7860DEN2014A IN2014DN07860A IN 2014DN07860 A IN2014DN07860 A IN 2014DN07860A IN 7860DEN2014 A IN7860DEN2014 A IN 7860DEN2014A IN 2014DN07860 A IN2014DN07860 A IN 2014DN07860A
Authority
IN
India
Prior art keywords
semiconductor body
substantially flat
top side
point
light receiving
Prior art date
Application number
Inventor
Mehmet Nadir Dagli
Changwan Son
Original Assignee
Solar3D Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solar3D Inc filed Critical Solar3D Inc
Publication of IN2014DN07860A publication Critical patent/IN2014DN07860A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A three dimensional solar cell composed of a semiconductor body that has a substantially flat bottom surface and shaped trenches formed in an arrayed manner along its top side. Thus multiple pillars are thereby formed in the semiconductor body extending toward the top side of the semiconductor body. A light collecting material fills the shaped trenches along the top side of the semiconductor body and forms a substantially flat light receiving top surface parallel to the bottom surface of the semiconductor body. Each of at least some of the trenches are structured such that there exists at least one point on the substantially flat light receiving surface that if a light ray is incident on that point the light ray if remaining within the corresponding trench as opposed to entering the semiconductor body will be redirected upwards at least after a fourth reflection on neighboring pillars.
IN7860DEN2014 2012-02-22 2013-02-20 IN2014DN07860A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261601796P 2012-02-22 2012-02-22
US201261671612P 2012-07-13 2012-07-13
PCT/US2013/026914 WO2013126434A1 (en) 2012-02-22 2013-02-20 Wide angle three-dimensional solar cells

Publications (1)

Publication Number Publication Date
IN2014DN07860A true IN2014DN07860A (en) 2015-04-24

Family

ID=49006164

Family Applications (1)

Application Number Title Priority Date Filing Date
IN7860DEN2014 IN2014DN07860A (en) 2012-02-22 2013-02-20

Country Status (5)

Country Link
US (1) US20150027518A1 (en)
CN (1) CN104396023A (en)
IN (1) IN2014DN07860A (en)
SG (1) SG11201404787YA (en)
WO (1) WO2013126434A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112786730B (en) * 2020-12-17 2022-11-08 隆基绿能科技股份有限公司 Laminated photovoltaic device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5067985A (en) * 1990-06-08 1991-11-26 The United States Of America As Represented By The Secretary Of The Air Force Back-contact vertical-junction solar cell and method
DE4201126A1 (en) * 1992-01-17 1992-06-11 Gerhard Dr Ing Schumm Semiconductor thin film component for photoelectric energy conversion - has sawtooth formation of active layer on rear face for multiple internal reflection of unabsorbed light
CN1082254C (en) * 1995-08-22 2002-04-03 松下电器产业株式会社 Silicon Structure, its mfg. method and apparatus, and solar cell using same
US8035028B2 (en) * 2006-10-09 2011-10-11 Solexel, Inc. Pyramidal three-dimensional thin-film solar cells
US20100139759A1 (en) * 2006-12-06 2010-06-10 Kobenhavns Universitet Optical device
CA2713910A1 (en) * 2008-02-12 2009-08-20 Michael Julian Brett Photovoltaic device based on conformal coating of columnar structures
EP2161758A1 (en) * 2008-09-05 2010-03-10 Flexucell ApS Solar cell and method for the production thereof
US8389388B2 (en) * 2009-04-30 2013-03-05 Hewlett-Packard Development Company, L.P. Photonic device and method of making the same
WO2011005462A1 (en) * 2009-06-21 2011-01-13 The Regents Of The University Of California Nanostructure, photovoltaic device, and method of fabrication thereof
CN102201465A (en) * 2010-03-26 2011-09-28 北京师范大学 Photovoltaic solar energy cell of silicon micro-nano structure
US11677038B2 (en) * 2011-05-28 2023-06-13 Banpil Photonics, Inc. Perpetual energy harvester and method of fabrication
US9105775B2 (en) * 2012-06-28 2015-08-11 International Business Machines Corporation Textured multi-junction solar cell and fabrication method

Also Published As

Publication number Publication date
CN104396023A (en) 2015-03-04
WO2013126434A1 (en) 2013-08-29
SG11201404787YA (en) 2014-09-26
US20150027518A1 (en) 2015-01-29

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