IN2013MN01542A - - Google Patents
Download PDFInfo
- Publication number
- IN2013MN01542A IN2013MN01542A IN1542MUN2013A IN2013MN01542A IN 2013MN01542 A IN2013MN01542 A IN 2013MN01542A IN 1542MUN2013 A IN1542MUN2013 A IN 1542MUN2013A IN 2013MN01542 A IN2013MN01542 A IN 2013MN01542A
- Authority
- IN
- India
- Prior art keywords
- trenches
- concave surfaces
- openings
- surface area
- silicon oxide
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 238000000231 atomic layer deposition Methods 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/10—Metal-oxide dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
- H01L28/87—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15192—Resurf arrangement of the internal vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Higher capacitance density is achieved by increasing a surface area of a capacitor. A larger surface area may be obtained by forming isotropic ball shapes (a concave surface) in the trenches on the semiconductor die. The concave surfaces are fabricated by depositing bilayers of amorphous silicon and silicon oxide. Openings are patterned in the silicon oxide hard mask for trenches. The openings are transferred to the amorphous silicon layers through isotropic etching to form concave surfaces. Conducting insulating and conducting layers are deposited on the concave surfaces of the trenches by atomic layer deposition.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/021,151 US8492874B2 (en) | 2011-02-04 | 2011-02-04 | High density metal-insulator-metal trench capacitor |
PCT/US2012/023999 WO2012106720A1 (en) | 2011-02-04 | 2012-02-06 | High density metal-insulator-metal trench capacitor with concave surfaces |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2013MN01542A true IN2013MN01542A (en) | 2015-06-12 |
Family
ID=45768300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN1542MUN2013 IN2013MN01542A (en) | 2011-02-04 | 2012-02-06 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8492874B2 (en) |
EP (1) | EP2671245A1 (en) |
KR (2) | KR20130120535A (en) |
IN (1) | IN2013MN01542A (en) |
WO (1) | WO2012106720A1 (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101842901B1 (en) * | 2011-10-18 | 2018-03-29 | 삼성전자주식회사 | Manufacturing method of semiconductor device |
US9012296B2 (en) | 2012-12-11 | 2015-04-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self-aligned deep trench capacitor, and method for making the same |
US9468098B2 (en) * | 2014-03-20 | 2016-10-11 | Qualcomm Incorporated | Face-up substrate integration with solder ball connection in semiconductor package |
US9562292B2 (en) | 2014-05-05 | 2017-02-07 | The United States Of America, As Represented By The Secretary Of Commerce | Photoactive article, process for making, and use of same |
DE102016122943B4 (en) | 2015-12-29 | 2024-03-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | INTEGRATED CHIP INCLUDING A DEEP TRENCH CAPACITOR WITH A CORRUPTED PROFILE AND MANUFACTURING PROCESS FOR THE LATTER |
US20170186837A1 (en) | 2015-12-29 | 2017-06-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deep trench capacitor with scallop profile |
US10886293B2 (en) * | 2017-09-07 | 2021-01-05 | Toshiba Memory Corporation | Semiconductor device and method of fabricating the same |
US10734402B2 (en) * | 2017-09-07 | 2020-08-04 | Toshiba Memory Corporation | Semiconductor device and method of fabricating the same |
WO2019171470A1 (en) * | 2018-03-06 | 2019-09-12 | 株式会社 東芝 | Capacitor and method for producing same |
JP7063019B2 (en) * | 2018-03-09 | 2022-05-09 | Tdk株式会社 | Manufacturing method of thin film capacitors and thin film capacitors |
US11081543B2 (en) * | 2018-03-23 | 2021-08-03 | International Business Machines Corporation | Multi-spheroid BEOL capacitor |
US10373866B1 (en) | 2018-05-04 | 2019-08-06 | International Business Machines Corporation | Method of forming metal insulator metal capacitor with extended capacitor plates |
US10381263B1 (en) | 2018-05-04 | 2019-08-13 | International Business Machines Corporation | Method of forming via contact with resistance control |
US11063157B1 (en) | 2019-12-27 | 2021-07-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Trench capacitor profile to decrease substrate warpage |
CN113178426A (en) * | 2020-05-11 | 2021-07-27 | 台湾积体电路制造股份有限公司 | Semiconductor device and method for manufacturing the same |
KR20230009025A (en) * | 2021-07-08 | 2023-01-17 | 주식회사 키파운드리 | Method of Deep Trench Etching with Scallop Profile |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59131974A (en) | 1983-01-18 | 1984-07-28 | セイコーエプソン株式会社 | Electrooptic apparatus |
US5160987A (en) | 1989-10-26 | 1992-11-03 | International Business Machines Corporation | Three-dimensional semiconductor structures formed from planar layers |
US5155657A (en) | 1991-10-31 | 1992-10-13 | International Business Machines Corporation | High area capacitor formation using material dependent etching |
DE19546999C1 (en) | 1995-12-15 | 1997-04-30 | Siemens Ag | Capacitor mfg system for semiconductor device |
US5753948A (en) | 1996-11-19 | 1998-05-19 | International Business Machines Corporation | Advanced damascene planar stack capacitor fabrication method |
US5970340A (en) * | 1997-06-24 | 1999-10-19 | Micron Technology, Inc. | Method for making semiconductor device incorporating an electrical contact to an internal conductive layer |
US5976945A (en) * | 1997-11-20 | 1999-11-02 | Vanguard International Semiconductor Corporation | Method for fabricating a DRAM cell structure on an SOI wafer incorporating a two dimensional trench capacitor |
JP3630551B2 (en) | 1998-04-02 | 2005-03-16 | 株式会社東芝 | Semiconductor memory device and manufacturing method thereof |
US5981350A (en) * | 1998-05-29 | 1999-11-09 | Micron Technology, Inc. | Method for forming high capacitance memory cells |
JP2002009244A (en) * | 2000-06-21 | 2002-01-11 | Hitachi Ltd | Semiconductor integrated circuit and its design method |
US6204141B1 (en) * | 2000-09-13 | 2001-03-20 | Taiwan Semiconductor Mfg. Co. Ltd. | Method of manufacturing a deep trench capacitor |
JP2002222934A (en) | 2001-01-29 | 2002-08-09 | Nec Corp | Semiconductor device and manufacturing method thereof |
JP2002334940A (en) | 2001-05-10 | 2002-11-22 | Sony Corp | Semiconductor device and method of manufacturing the same |
US6387750B1 (en) | 2001-07-02 | 2002-05-14 | Macronix International Co., Ltd. | Method of forming MIM capacitor |
DE10143283C1 (en) | 2001-09-04 | 2002-12-12 | Infineon Technologies Ag | Production of a trench capacitor comprises a preparing a substrate having a surface in which a trench is formed and having an upper region, a lower region and a side wall |
US20030052088A1 (en) | 2001-09-19 | 2003-03-20 | Anisul Khan | Method for increasing capacitance in stacked and trench capacitors |
KR100528326B1 (en) | 2002-12-31 | 2005-11-15 | 삼성전자주식회사 | Thin film semiconductor device with protective cap over flexible substrate and electronic device using the same and manufacturing method thereof |
US7239194B2 (en) * | 2004-03-25 | 2007-07-03 | Integral Wave Technologies, Inc. | Trench capacitor power supply system and method |
US7270765B2 (en) | 2004-06-14 | 2007-09-18 | Asahi Glass Company, Limited | Composition for forming dielectric layer, MIM capacitor and process for its production |
US7223654B2 (en) | 2005-04-15 | 2007-05-29 | International Business Machines Corporation | MIM capacitor and method of fabricating same |
DE102005038219B4 (en) | 2005-08-12 | 2008-11-13 | Infineon Technologies Ag | Integrated circuit arrangement with capacitor in a track layer and method for producing the same |
EP1949418A2 (en) | 2005-11-08 | 2008-07-30 | Nxp B.V. | Integrated capacitor arrangement for ultrahigh capacitance values |
JP2009535835A (en) | 2006-05-02 | 2009-10-01 | エヌエックスピー ビー ヴィ | Electrical device with improved electrode |
KR100778865B1 (en) | 2006-05-25 | 2007-11-22 | 동부일렉트로닉스 주식회사 | Method for manufacturing mim type capacitor |
JP5016928B2 (en) * | 2007-01-10 | 2012-09-05 | 株式会社東芝 | Nonvolatile semiconductor memory device and manufacturing method thereof |
TW200849488A (en) | 2007-06-08 | 2008-12-16 | Nanya Technology Corp | Deep trench and fabricating method thereof, trench capacitor and fabricating method thereof |
JP2009277770A (en) * | 2008-05-13 | 2009-11-26 | Toshiba Corp | Non-volatile semiconductor memory device and its production process |
US8021945B2 (en) | 2009-04-14 | 2011-09-20 | International Business Machines Corporation | Bottle-shaped trench capacitor with enhanced capacitance |
US8502340B2 (en) * | 2010-12-09 | 2013-08-06 | Tessera, Inc. | High density three-dimensional integrated capacitors |
-
2011
- 2011-02-04 US US13/021,151 patent/US8492874B2/en active Active
-
2012
- 2012-02-06 KR KR1020137023068A patent/KR20130120535A/en not_active Application Discontinuation
- 2012-02-06 IN IN1542MUN2013 patent/IN2013MN01542A/en unknown
- 2012-02-06 KR KR1020157012409A patent/KR20150059807A/en not_active Application Discontinuation
- 2012-02-06 WO PCT/US2012/023999 patent/WO2012106720A1/en active Application Filing
- 2012-02-06 EP EP12706148.9A patent/EP2671245A1/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
KR20130120535A (en) | 2013-11-04 |
EP2671245A1 (en) | 2013-12-11 |
US8492874B2 (en) | 2013-07-23 |
WO2012106720A1 (en) | 2012-08-09 |
US20120199949A1 (en) | 2012-08-09 |
KR20150059807A (en) | 2015-06-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IN2013MN01542A (en) | ||
WO2014110450A3 (en) | Methods for integrating lead and graphene growth and devices formed therefrom | |
JP2012235103A5 (en) | Manufacturing method of semiconductor device and semiconductor device | |
WO2011153095A3 (en) | Metal gate structures and methods for forming thereof | |
JP2013149963A5 (en) | Method for manufacturing semiconductor device | |
WO2015038423A3 (en) | Reverse self aligned double patterning process for back end of line fabrication of a semiconductor device | |
JP2013093546A5 (en) | ||
GB2510525A (en) | Rare-earth oxide isolated semiconductor fin | |
SG169292A1 (en) | Semiconductor device and production method thereof | |
GB201320434D0 (en) | Epitaxial extension CMOS transistor | |
JP2012004549A5 (en) | Semiconductor device | |
GB2524414A (en) | Composite hardmask for finfet structures | |
TW200725753A (en) | Method for fabricating silicon nitride spacer structures | |
WO2013093504A3 (en) | Etched silicon structures, method of forming etched silicon structures and uses thereof | |
JP2014131025A5 (en) | ||
JP2012099796A5 (en) | ||
WO2013134592A3 (en) | Atomic layer deposition strengthening members and method of manufacture | |
WO2010091405A3 (en) | Metrology methods and apparatus for nanomaterial characterization of energy storage electrode structures | |
MX2015007315A (en) | Fabrication of three-dimensional high surface area electrodes. | |
JP2014534336A5 (en) | ||
RU2014134901A (en) | CAPACITY CONVERTER OBTAINED BY MICROWORKING AND METHOD FOR PRODUCING IT | |
JP2012146838A5 (en) | ||
SG169948A1 (en) | Reliable interconnect for semiconductor device | |
EP2782138A3 (en) | Semiconductor device and method for manufacturing the same | |
GB201201735D0 (en) | Under bump passives in wafer level packaging |