IN2013DE03218A - - Google Patents

Info

Publication number
IN2013DE03218A
IN2013DE03218A IN3218DE2013A IN2013DE03218A IN 2013DE03218 A IN2013DE03218 A IN 2013DE03218A IN 3218DE2013 A IN3218DE2013 A IN 3218DE2013A IN 2013DE03218 A IN2013DE03218 A IN 2013DE03218A
Authority
IN
India
Application number
Inventor
MAZHARI Baquer
Ashok Arjit
Original Assignee
Indian Inst Technology Kanpur
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Indian Inst Technology Kanpur filed Critical Indian Inst Technology Kanpur
Priority to IN3218DE2013 priority Critical patent/IN2013DE03218A/en
Priority to PCT/IB2013/061383 priority patent/WO2015063550A1/en
Priority to CN201380080682.5A priority patent/CN105745755B/en
Priority to US15/026,705 priority patent/US9831453B2/en
Publication of IN2013DE03218A publication Critical patent/IN2013DE03218A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Junction Field-Effect Transistors (AREA)
IN3218DE2013 2013-10-31 2013-10-31 IN2013DE03218A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IN3218DE2013 IN2013DE03218A (en) 2013-10-31 2013-10-31
PCT/IB2013/061383 WO2015063550A1 (en) 2013-10-31 2013-12-28 Four-terminal gate-controlled thin-film organic thyristor
CN201380080682.5A CN105745755B (en) 2013-10-31 2013-12-28 The four organic thyristors of terminal grid controlled thin film
US15/026,705 US9831453B2 (en) 2013-10-31 2013-12-28 Four-terminal gate-controlled thin-film organic thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IN3218DE2013 IN2013DE03218A (en) 2013-10-31 2013-10-31

Publications (1)

Publication Number Publication Date
IN2013DE03218A true IN2013DE03218A (en) 2015-05-08

Family

ID=53003421

Family Applications (1)

Application Number Title Priority Date Filing Date
IN3218DE2013 IN2013DE03218A (en) 2013-10-31 2013-10-31

Country Status (4)

Country Link
US (1) US9831453B2 (en)
CN (1) CN105745755B (en)
IN (1) IN2013DE03218A (en)
WO (1) WO2015063550A1 (en)

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4176371A (en) 1976-01-09 1979-11-27 Westinghouse Electric Corp. Thyristor fired by overvoltage
US5359256A (en) 1992-07-30 1994-10-25 The United States Of America As Represented By The Secretary Of The Navy Regulatable field emitter device and method of production thereof
DE4431294A1 (en) * 1994-09-02 1996-03-07 Abb Management Ag Switchable thyristor for high blocking voltages and small component thickness
US6933541B1 (en) 1997-09-30 2005-08-23 Virginia Tech Intellectual Properties, Inc. Emitter turn-off thyristors (ETO)
US6648711B1 (en) 1999-06-16 2003-11-18 Iljin Nanotech Co., Ltd. Field emitter having carbon nanotube film, method of fabricating the same, and field emission display device using the field emitter
US6512274B1 (en) 2000-06-22 2003-01-28 Progressant Technologies, Inc. CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
EP1306909A1 (en) * 2001-10-24 2003-05-02 Interuniversitair Micro-Elektronica Centrum Ambipolar organic transistors
US7385230B1 (en) * 2005-02-08 2008-06-10 The University Of Connecticut Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit
GB2441355B (en) * 2006-08-31 2009-05-20 Cambridge Display Tech Ltd Organic electronic device
JP5328122B2 (en) * 2007-08-20 2013-10-30 ローム株式会社 Organic thin film transistor
US7935961B2 (en) * 2007-10-19 2011-05-03 Samsung Electronics Co., Ltd. Multi-layered bipolar field-effect transistor and method of manufacturing the same
WO2009087793A1 (en) * 2008-01-11 2009-07-16 National Institute Of Japan Science And Technology Agency Field-effect transistor, field-effect transistor manufacturing method, intermediate and secondary intermediate
EP2340576A2 (en) * 2008-10-29 2011-07-06 Koninklijke Philips Electronics N.V. Dual gate field-effect transistor and method of producing a dual gate field-effect transistor
EP2363904A3 (en) * 2010-03-02 2013-02-27 Ricoh Company, Limited Organic semiconductor element and organic electrode
ITRM20100107A1 (en) * 2010-03-12 2011-09-13 Consiglio Nazionale Ricerche TRANSISTOR WITH FIELD EFFECT BASED ON ORGANIC MOLECULES LIGHT EMITTER
US8664648B2 (en) * 2010-07-22 2014-03-04 National Tsing Hua University N-type organic thin film transistor, ambipolar field-effect transistor, and method of fabricating the same
WO2013149678A1 (en) * 2012-04-05 2013-10-10 Novaled Ag Organic field effect transistor and method for producing the same
ES2566914T3 (en) * 2012-05-18 2016-04-18 Isis Innovation Limited Photovoltaic device comprising perovskites
US9515273B2 (en) * 2012-12-24 2016-12-06 Indian Institute Of Technology Kanpur Thin film transistor with a current-induced channel

Also Published As

Publication number Publication date
US20160254469A1 (en) 2016-09-01
US9831453B2 (en) 2017-11-28
CN105745755B (en) 2018-12-11
WO2015063550A1 (en) 2015-05-07
CN105745755A (en) 2016-07-06

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