IN148843B - - Google Patents

Info

Publication number
IN148843B
IN148843B IN1401/CAL/77A IN1401CA1977A IN148843B IN 148843 B IN148843 B IN 148843B IN 1401CA1977 A IN1401CA1977 A IN 1401CA1977A IN 148843 B IN148843 B IN 148843B
Authority
IN
India
Application number
IN1401/CAL/77A
Other languages
English (en)
Inventor
A Brajder
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of IN148843B publication Critical patent/IN148843B/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04126Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/615Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in a Darlington configuration
IN1401/CAL/77A 1976-10-01 1977-09-13 IN148843B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2644507A DE2644507C3 (de) 1976-10-01 1976-10-01 Verfahren zur Aussteuerung eines im Sättigungszustand betriebenen Transistors und Vorrichtung zur Durchführung des Verfahrens

Publications (1)

Publication Number Publication Date
IN148843B true IN148843B (xx) 1981-06-27

Family

ID=5989493

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1401/CAL/77A IN148843B (xx) 1976-10-01 1977-09-13

Country Status (12)

Country Link
US (1) US4239989A (xx)
JP (1) JPS5345160A (xx)
AT (1) AT367935B (xx)
BE (1) BE859185A (xx)
CA (1) CA1101083A (xx)
CH (1) CH620552A5 (xx)
DE (1) DE2644507C3 (xx)
FR (1) FR2366746A1 (xx)
IN (1) IN148843B (xx)
IT (1) IT1087407B (xx)
NL (1) NL7710132A (xx)
ZA (1) ZA775513B (xx)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4296336A (en) * 1979-01-22 1981-10-20 General Semiconductor Co., Inc. Switching circuit and method for avoiding secondary breakdown
US4356416A (en) * 1980-07-17 1982-10-26 General Electric Company Voltage controlled non-saturating semiconductor switch and voltage converter circuit employing same
NL8004675A (nl) * 1980-08-19 1982-03-16 Philips Nv Signaalbufferschakeling in een geintegreerde schakeling voor het leveren van een uitgangssignaal aan een aansluitklem.
US4465961A (en) * 1981-06-15 1984-08-14 Zycron Systems, Inc. Motor control system
US4410810A (en) * 1981-08-06 1983-10-18 Gould Inc. High speed transistor switching circuit
DE3132473A1 (de) * 1981-08-17 1983-03-17 Siemens AG, 1000 Berlin und 8000 München Gesteuerter schalter fuer hochfrequente, gleichstromfreie signale
JPS58175970A (ja) * 1982-04-08 1983-10-15 Fuji Electric Co Ltd スイッチング半導体素子への逆バイアス電流供給装置
US4508981A (en) * 1982-06-28 1985-04-02 International Business Machines Corporation Driver circuitry for reducing on-chip Delta-I noise
EP0101751B1 (de) * 1982-08-25 1991-08-21 Ibm Deutschland Gmbh Transistor-Leistungsverstärker mit verringerten Schaltzeiten
AT382274B (de) * 1983-02-21 1987-02-10 Elektro Neon Elger Ges M B H Verwendung einer schaltungsanordnung zur ansteuerung eines schalttransistors
US4588904A (en) * 1983-09-16 1986-05-13 At&T Bell Laboratories High efficiency bias circuit for high frequency inductively loaded power switching transistor
FR2579844B1 (fr) * 1985-04-02 1987-05-15 Thomson Csf Circuit de commande de base de transistor fonctionnant a frequence elevee
US4728817A (en) * 1987-02-09 1988-03-01 Westinghouse Electric Corp. Power transistor drive circuit
EP0314013B1 (de) * 1987-10-26 1991-08-14 Siemens Aktiengesellschaft Verfahren zur Basisstromregelung eines Schalttransistors und Schaltungsanordnung zur Durchführung des Verfahrens
US4887198A (en) * 1988-03-01 1989-12-12 Jang B. Lee Electronic large current switch for a single power circuit
US4891532A (en) * 1988-11-08 1990-01-02 Sundstrand Corporation Darlington connected switch having base drive with active turn-off
GB2235102A (en) * 1989-07-21 1991-02-20 Univ Lancaster Switching circuit
US5206639A (en) * 1990-10-25 1993-04-27 Timex Corporation Single antenna dual frequency transponder
US5898334A (en) * 1997-05-12 1999-04-27 Elantec Semiconductor, Inc. Reduced output capacitance circuit for driving a grounded load in response to a stepped input
TW503646B (en) 2000-03-16 2002-09-21 Nippon Sheet Glass Co Ltd Line illuminating device
US6597210B2 (en) * 2001-10-03 2003-07-22 Bruce W. Carsten Apparatus and method for control and driving BJT used as controlled rectifier
DE102005061716A1 (de) * 2005-12-22 2007-07-05 BME Meßgeräte Entwicklung KG Pockelszellen-Ansteuerschaltung zur schnellen Variation der Pulsamplitude von kurzen oder ultrakurzen Laserpulsen
WO2015033444A1 (ja) * 2013-09-06 2015-03-12 三菱電機株式会社 バッファ回路
US9906213B2 (en) * 2015-11-06 2018-02-27 Globalfoundries Inc. Reducing thermal runaway in inverter devices
GB2602142A (en) * 2020-12-20 2022-06-22 Search For The Next Ltd Circuits including high power transistors

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE558124A (xx) * 1956-06-07
US3056064A (en) * 1958-04-08 1962-09-25 Warwick Mfg Corp Transistor switch
US3194979A (en) * 1961-09-29 1965-07-13 Bell Telephone Labor Inc Transistor switching circuit
US3244910A (en) * 1963-04-18 1966-04-05 Bendix Corp Electric switching circuit
NL7010432A (xx) * 1970-07-15 1972-01-18
US3927332A (en) * 1975-02-24 1975-12-16 Rca Corp Drive circuit for controlling conduction of a semiconductor device
US4017115A (en) * 1975-12-17 1977-04-12 The Burke Company Lift system for concrete slabs

Also Published As

Publication number Publication date
DE2644507B2 (de) 1978-11-16
FR2366746B1 (xx) 1980-08-01
FR2366746A1 (fr) 1978-04-28
CH620552A5 (xx) 1980-11-28
ZA775513B (en) 1978-07-26
CA1101083A (en) 1981-05-12
JPS5345160A (en) 1978-04-22
US4239989A (en) 1980-12-16
DE2644507A1 (de) 1978-04-06
BE859185A (fr) 1978-01-16
AT367935B (de) 1982-08-10
NL7710132A (nl) 1978-04-04
DE2644507C3 (de) 1984-07-26
IT1087407B (it) 1985-06-04
ATA680077A (de) 1981-12-15

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