IL97898A0 - High power laser diode - Google Patents

High power laser diode

Info

Publication number
IL97898A0
IL97898A0 IL97898A IL9789891A IL97898A0 IL 97898 A0 IL97898 A0 IL 97898A0 IL 97898 A IL97898 A IL 97898A IL 9789891 A IL9789891 A IL 9789891A IL 97898 A0 IL97898 A0 IL 97898A0
Authority
IL
Israel
Prior art keywords
laser diode
high power
power laser
diode
power
Prior art date
Application number
IL97898A
Original Assignee
Inst De Fizica Si Tehnologia M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst De Fizica Si Tehnologia M filed Critical Inst De Fizica Si Tehnologia M
Publication of IL97898A0 publication Critical patent/IL97898A0/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
IL97898A 1990-04-20 1991-04-17 High power laser diode IL97898A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RO14489490A RO102871B1 (en) 1990-04-20 1990-04-20 High power laser diode

Publications (1)

Publication Number Publication Date
IL97898A0 true IL97898A0 (en) 1992-06-21

Family

ID=20127139

Family Applications (1)

Application Number Title Priority Date Filing Date
IL97898A IL97898A0 (en) 1990-04-20 1991-04-17 High power laser diode

Country Status (4)

Country Link
EP (1) EP0478755A1 (en)
IL (1) IL97898A0 (en)
RO (1) RO102871B1 (en)
WO (1) WO1991016747A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RO109906B1 (en) * 1994-09-09 1995-06-30 Prahova Iulian Basara Petrescu High power laser diode
US6810063B1 (en) * 1999-06-09 2004-10-26 The Furukawa Electric Co., Ltd. Semiconductor laser device
JP2001148537A (en) * 1999-11-18 2001-05-29 Nec Corp Semiconductor laser
FR2831723B1 (en) 2001-10-31 2004-02-06 Cit Alcatel SEMICONDUCTOR LASER
US6724795B2 (en) 2002-05-10 2004-04-20 Bookham Technology, Plc Semiconductor laser
FI20085512A0 (en) * 2008-05-28 2008-05-28 Oulun Yliopisto semiconductor laser
DE102009041934A1 (en) * 2009-09-17 2011-03-24 Osram Opto Semiconductors Gmbh Edge-emitting semiconductor laser

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3733561A (en) * 1971-07-27 1973-05-15 Bell Telephone Labor Inc High power, fundamental transverse mode operation in double heterostructure lasers
US3855607A (en) * 1973-05-29 1974-12-17 Rca Corp Semiconductor injection laser with reduced divergence of emitted beam
CA1147045A (en) * 1978-09-20 1983-05-24 Naoki Chinone Semiconductor laser device
JPH01264286A (en) * 1988-04-15 1989-10-20 Omron Tateisi Electron Co Semiconductor quantum well laser
JPH0212885A (en) * 1988-06-29 1990-01-17 Nec Corp Semiconductor laser and method of controlling vertical radiating angle of laser beam
DE3838016A1 (en) * 1988-11-09 1990-05-10 Siemens Ag SEMICONDUCTOR LASER IN THE GAA1INAS SYSTEM

Also Published As

Publication number Publication date
RO102871B1 (en) 1993-08-16
EP0478755A1 (en) 1992-04-08
WO1991016747A1 (en) 1991-10-31

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