IL87414A - Process methodology for two-sided fabrication of devices on thinned silicon
- Google Patents
Process methodology for two-sided fabrication of devices on thinned silicon
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Publication number
IL87414A
IL87414AIL87414AIL8741488AIL87414AIL 87414 AIL87414 AIL 87414AIL 87414 AIL87414 AIL 87414AIL 8741488 AIL8741488 AIL 8741488AIL 87414 AIL87414 AIL 87414A
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Priority claimed from US07/089,786external-prioritypatent/US4782028A/en
Application filed by Santa Barbara Res CenterfiledCriticalSanta Barbara Res Center
Publication of IL87414A0publicationCriticalpatent/IL87414A0/en
Publication of IL87414ApublicationCriticalpatent/IL87414A/en