IL85652A0 - Hg-cd-te photodiode with high speed response - Google Patents

Hg-cd-te photodiode with high speed response

Info

Publication number
IL85652A0
IL85652A0 IL85652A IL8565288A IL85652A0 IL 85652 A0 IL85652 A0 IL 85652A0 IL 85652 A IL85652 A IL 85652A IL 8565288 A IL8565288 A IL 8565288A IL 85652 A0 IL85652 A0 IL 85652A0
Authority
IL
Israel
Prior art keywords
photodiode
high speed
speed response
response
speed
Prior art date
Application number
IL85652A
Original Assignee
Telecommunications Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telecommunications Sa filed Critical Telecommunications Sa
Publication of IL85652A0 publication Critical patent/IL85652A0/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
IL85652A 1987-03-12 1988-03-07 Hg-cd-te photodiode with high speed response IL85652A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8703405A FR2612335A1 (en) 1987-03-12 1987-03-12 HgCdTe photodiode with fast response

Publications (1)

Publication Number Publication Date
IL85652A0 true IL85652A0 (en) 1988-08-31

Family

ID=9348900

Family Applications (1)

Application Number Title Priority Date Filing Date
IL85652A IL85652A0 (en) 1987-03-12 1988-03-07 Hg-cd-te photodiode with high speed response

Country Status (3)

Country Link
JP (1) JPS63239870A (en)
FR (1) FR2612335A1 (en)
IL (1) IL85652A0 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08255923A (en) * 1995-03-15 1996-10-01 Fujitsu Ltd Semiconductor device employing ii-vi compound semiconductor and fabrication thereof
FR2754107B1 (en) * 1996-10-01 1998-10-30 Commissariat Energie Atomique LARGE DIMENSIONAL PHOTONIC RADIATION DETECTOR
GB2433648A (en) * 2005-12-21 2007-06-27 Durham Scient Crystals Ltd Radiation detector formed by deposition of bulk semiconductor crystal layers
US20090053453A1 (en) 2005-12-21 2009-02-26 Durham Scientific Crystals Limited Semiconductor device and method of manufacture thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821777A (en) * 1972-09-22 1974-06-28 Varian Associates Avalanche photodiode
US4357620A (en) * 1980-11-18 1982-11-02 The United States Of America As Represented By The Secretary Of The Army Liquid-phase epitaxial growth of cdTe on HgCdTe
USRE31968E (en) * 1980-12-31 1985-08-13 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
US4439912A (en) * 1982-04-19 1984-04-03 The United States Of America As Represented By The Secretary Of The Army Infrared detector and method of making same

Also Published As

Publication number Publication date
FR2612335A1 (en) 1988-09-16
JPS63239870A (en) 1988-10-05

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