IL82436A0 - Process of forming a positive pattern in a photoresist layer - Google Patents

Process of forming a positive pattern in a photoresist layer

Info

Publication number
IL82436A0
IL82436A0 IL82436A IL8243687A IL82436A0 IL 82436 A0 IL82436 A0 IL 82436A0 IL 82436 A IL82436 A IL 82436A IL 8243687 A IL8243687 A IL 8243687A IL 82436 A0 IL82436 A0 IL 82436A0
Authority
IL
Israel
Prior art keywords
forming
photoresist layer
positive pattern
positive
pattern
Prior art date
Application number
IL82436A
Other versions
IL82436A (en
Original Assignee
Ucb Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ucb Sa filed Critical Ucb Sa
Publication of IL82436A0 publication Critical patent/IL82436A0/en
Publication of IL82436A publication Critical patent/IL82436A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
    • H01L21/475—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
IL82436A 1986-05-08 1987-05-06 Process of forming a positive pattern in a photoresist layer IL82436A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB868611229A GB8611229D0 (en) 1986-05-08 1986-05-08 Forming positive pattern

Publications (2)

Publication Number Publication Date
IL82436A0 true IL82436A0 (en) 1987-11-30
IL82436A IL82436A (en) 1990-12-23

Family

ID=10597517

Family Applications (1)

Application Number Title Priority Date Filing Date
IL82436A IL82436A (en) 1986-05-08 1987-05-06 Process of forming a positive pattern in a photoresist layer

Country Status (5)

Country Link
EP (1) EP0248779A1 (en)
JP (1) JPS6324248A (en)
KR (1) KR870011682A (en)
GB (1) GB8611229D0 (en)
IL (1) IL82436A (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0249457B1 (en) * 1986-06-12 1991-08-21 Matsushita Electric Industrial Co., Ltd. Method for formation of patterns
US4808511A (en) * 1987-05-19 1989-02-28 International Business Machines Corporation Vapor phase photoresist silylation process
NL8801255A (en) * 1988-05-16 1989-12-18 Philips Nv METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
JP2521520B2 (en) * 1988-07-18 1996-08-07 松下電器産業株式会社 Pattern formation method
US5356758A (en) * 1988-12-28 1994-10-18 Texas Instruments Incorporated Method and apparatus for positively patterning a surface-sensitive resist on a semiconductor wafer
JPH0391754A (en) * 1989-09-05 1991-04-17 Mitsubishi Electric Corp Pattern forming method
US5139925A (en) * 1989-10-18 1992-08-18 Massachusetts Institute Of Technology Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
JP2815024B2 (en) * 1989-11-13 1998-10-27 富士通株式会社 Method of forming resist pattern
AU629032B2 (en) * 1990-05-29 1992-09-24 Kuninobu Kurumisawa Letterpress for transferring and method of transferring by use of the letterpress for transferring
ES2090218T3 (en) * 1990-12-20 1996-10-16 Siemens Ag PHOTOLITHOGRAPHIC STRUCTURAL GENERATION.
US5322765A (en) * 1991-11-22 1994-06-21 International Business Machines Corporation Dry developable photoresist compositions and method for use thereof
US5733706A (en) * 1994-05-25 1998-03-31 Siemens Aktiengesellschaft Dry-developable positive resist
US20100028622A1 (en) * 2006-09-26 2010-02-04 Yutaka Shoji Kaisha, Ltd. Nonthermal transfer sheet and method for manufacturing the same
CN114613672A (en) * 2022-05-16 2022-06-10 广州粤芯半导体技术有限公司 Method for manufacturing semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56162744A (en) * 1980-05-19 1981-12-14 Hitachi Ltd Formation of fine pattern
IT1138814B (en) * 1980-07-03 1986-09-17 Rca Corp METHOD FOR THE FORMATION OF SURFACE SURFACE DRAWINGS WITH FAR ULTRAVIOLET AND PHOTOSENSITIVE PROTECTIVE COMPOSITION FOR THIS METHOD
KR880002518B1 (en) * 1981-07-15 1988-11-26 미다가쓰시께 Radiation sensitive composition and patternformation method
US4554237A (en) * 1981-12-25 1985-11-19 Hitach, Ltd. Photosensitive resin composition and method for forming fine patterns with said composition
CA1248402A (en) * 1983-09-16 1989-01-10 Larry E. Stillwagon Method of making articles using gas functionalized plasma developed layer
EP0135900A3 (en) * 1983-09-16 1986-06-11 Olin Hunt Specialty Products, Inc. Aqueous developable negative resist compositions
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
US4613398A (en) * 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation

Also Published As

Publication number Publication date
GB8611229D0 (en) 1986-06-18
JPS6324248A (en) 1988-02-01
KR870011682A (en) 1987-12-26
IL82436A (en) 1990-12-23
EP0248779A1 (en) 1987-12-09

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