IL65339A0 - Manufacture of a detector device - Google Patents

Manufacture of a detector device

Info

Publication number
IL65339A0
IL65339A0 IL65339A IL6533982A IL65339A0 IL 65339 A0 IL65339 A0 IL 65339A0 IL 65339 A IL65339 A IL 65339A IL 6533982 A IL6533982 A IL 6533982A IL 65339 A0 IL65339 A0 IL 65339A0
Authority
IL
Israel
Prior art keywords
manufacture
detector device
detector
Prior art date
Application number
IL65339A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IL65339A0 publication Critical patent/IL65339A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/971—Stoichiometric control of host substrate composition
IL65339A 1981-03-27 1982-03-24 Manufacture of a detector device IL65339A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8109774A GB2095898B (en) 1981-03-27 1981-03-27 Methods of manufacturing a detector device

Publications (1)

Publication Number Publication Date
IL65339A0 true IL65339A0 (en) 1982-05-31

Family

ID=10520731

Family Applications (1)

Application Number Title Priority Date Filing Date
IL65339A IL65339A0 (en) 1981-03-27 1982-03-24 Manufacture of a detector device

Country Status (6)

Country Link
US (1) US4411732A (de)
EP (1) EP0062367B1 (de)
JP (1) JPS57170577A (de)
DE (1) DE3262369D1 (de)
GB (1) GB2095898B (de)
IL (1) IL65339A0 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4559695A (en) * 1981-03-27 1985-12-24 U.S. Philips Corporation Method of manufacturing an infrared radiation imaging device
DE3200853A1 (de) * 1982-01-14 1983-07-21 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit einer bildaufnahmeeinheit und mit einer ausleseeinheit sowie verfahren zu ihrer herstellung
DE3227263C2 (de) * 1982-07-21 1984-05-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung einer planaren Avalanche-Fotodiode mit langwelliger Empfindlichkeitsgrenze über 1,3 μ
IT1156085B (it) * 1982-10-25 1987-01-28 Cselt Centro Studi Lab Telecom Dispositivo optoelettronico e procedimento per la sua fabbricazione
US4682022A (en) * 1985-02-21 1987-07-21 The Perkin-Elmer Corporation Detector preamplifier for use with a MCT detector
US5079610A (en) * 1985-12-05 1992-01-07 Santa Barbara Research Center Structure and method of fabricating a trapping-mode
US5004698A (en) * 1985-12-05 1991-04-02 Santa Barbara Research Center Method of making photodetector with P layer covered by N layer
US5182217A (en) * 1985-12-05 1993-01-26 Santa Barbara Research Center Method of fabricating a trapping-mode
US4639756A (en) * 1986-05-05 1987-01-27 Santa Barbara Research Center Graded gap inversion layer photodiode array
FR2604298B1 (fr) * 1986-09-19 1988-10-28 Commissariat Energie Atomique Procede de realisation d'une prise de contact electrique sur un substrat en hgcdte de conductivite p et application a la fabrication d'une diode n/p
US4956304A (en) * 1988-04-07 1990-09-11 Santa Barbara Research Center Buried junction infrared photodetector process
US4961098A (en) * 1989-07-03 1990-10-02 Santa Barbara Research Center Heterojunction photodiode array
US5049962A (en) * 1990-03-07 1991-09-17 Santa Barbara Research Center Control of optical crosstalk between adjacent photodetecting regions
US5264699A (en) * 1991-02-20 1993-11-23 Amber Engineering, Inc. Infrared detector hybrid array with improved thermal cycle reliability and method for making same
US5308980A (en) * 1991-02-20 1994-05-03 Amber Engineering, Inc. Thermal mismatch accommodated infrared detector hybrid array
US5241196A (en) * 1991-10-15 1993-08-31 Santa Barbara Research Center Photoresponsive device including composition grading and recessed contacts for trapping minority carriers
GB9204078D0 (en) * 1992-02-26 1992-04-08 Philips Electronics Uk Ltd Infrared detector manufacture
US5300777A (en) * 1992-03-26 1994-04-05 Texas Instruments Incorporated Two color infrared detector and method
US5436450A (en) * 1994-01-13 1995-07-25 Texas Instruments Incorporated Infrared detector local biasing structure and method
US5426304A (en) * 1994-01-13 1995-06-20 Texas Instruments Incorporated Infrared detector thermal isolation structure and method
US5485010A (en) * 1994-01-13 1996-01-16 Texas Instruments Incorporated Thermal isolation structure for hybrid thermal imaging system
US5559332A (en) * 1994-11-04 1996-09-24 Texas Instruments Incorporated Thermal detector and method
US5536680A (en) * 1995-05-08 1996-07-16 Texas Instruments Incorporated Self-aligned bump bond infrared focal plane array architecture
US5708269A (en) * 1995-08-15 1998-01-13 Raytheon Ti Systems, Inc. Thermal detector and method
US6249374B1 (en) 1996-03-04 2001-06-19 Raytheon Company Wide field of view infrared zoom lens assembly having a constant F/number
US5852516A (en) * 1996-03-04 1998-12-22 Raytheon Ti Systems, Inc. Dual purpose infrared lens assembly using diffractive optics
US6018414A (en) * 1996-03-04 2000-01-25 Raytheon Company Dual band infrared lens assembly using diffractive optics
US5796514A (en) * 1996-03-04 1998-08-18 Raytheon Ti Systems, Inc. Infrared zoom lens assembly having a variable F/number
US6281035B1 (en) * 1997-09-25 2001-08-28 Midwest Research Institute Ion-beam treatment to prepare surfaces of p-CdTe films
US6458254B2 (en) * 1997-09-25 2002-10-01 Midwest Research Institute Plasma & reactive ion etching to prepare ohmic contacts
US6486476B1 (en) * 1998-12-22 2002-11-26 Hitachi, Ltd. Semiconductor radiation detector and manufacture thereof
DE10024473B4 (de) 2000-05-18 2007-04-19 Vishay Semiconductor Gmbh Optischer Empfänger
US20070227578A1 (en) * 2006-03-31 2007-10-04 Applied Materials, Inc. Method for patterning a photovoltaic device comprising CIGS material using an etch process
US7547570B2 (en) * 2006-03-31 2009-06-16 Applied Materials, Inc. Method for forming thin film photovoltaic interconnects using self-aligned process
US7718347B2 (en) * 2006-03-31 2010-05-18 Applied Materials, Inc. Method for making an improved thin film solar cell interconnect using etch and deposition process
US20080311762A1 (en) * 2007-06-18 2008-12-18 Mark Doczy Semiconductor device surface roughness reduction
RU2609222C1 (ru) * 2015-11-20 2017-01-31 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский государственный университет" (ТГУ, НИ ТГУ) СПОСОБ ОПРЕДЕЛЕНИЯ КОНЦЕНТРАЦИИ ДОНОРНОГО ФОНА В СТРУКТУРАХ CdxHg1-xTe
US11251075B2 (en) * 2018-08-06 2022-02-15 Mattson Technology, Inc. Systems and methods for workpiece processing using neutral atom beams

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3562022A (en) * 1967-12-26 1971-02-09 Hughes Aircraft Co Method of doping semiconductor bodies by indirection implantation
DE2708792C3 (de) * 1977-03-01 1980-07-10 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verwendung des Ionenätzverf ahrens zum Strukturieren von Halbleiterschichten und Ionenätzverfahren für diese Verwendung
GB2027556B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Manufacturing infra-red detectors
GB2027985B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Infra-red detectors
GB2027986B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Infra-red detectors

Also Published As

Publication number Publication date
US4411732A (en) 1983-10-25
EP0062367A1 (de) 1982-10-13
GB2095898B (en) 1985-01-09
GB2095898A (en) 1982-10-06
EP0062367B1 (de) 1985-02-20
JPS6244868B2 (de) 1987-09-22
DE3262369D1 (en) 1985-03-28
JPS57170577A (en) 1982-10-20

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Legal Events

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