IL324016A - מדידת מימד קריטי מדויקת ומדויקת על ידי מידול עיוות טעינה מקומי - Google Patents

מדידת מימד קריטי מדויקת ומדויקת על ידי מידול עיוות טעינה מקומי

Info

Publication number
IL324016A
IL324016A IL324016A IL32401625A IL324016A IL 324016 A IL324016 A IL 324016A IL 324016 A IL324016 A IL 324016A IL 32401625 A IL32401625 A IL 32401625A IL 324016 A IL324016 A IL 324016A
Authority
IL
Israel
Prior art keywords
measurement
charging
feature
transitory computer
readable medium
Prior art date
Application number
IL324016A
Other languages
English (en)
Inventor
Hongquan Zuo
Kangsheng Qiu
Mosong Cheng
Lingling Pu
Original Assignee
Asml Netherlands Bv
Hongquan Zuo
Kangsheng Qiu
Mosong Cheng
Lingling Pu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv, Hongquan Zuo, Kangsheng Qiu, Mosong Cheng, Lingling Pu filed Critical Asml Netherlands Bv
Publication of IL324016A publication Critical patent/IL324016A/he

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H10P74/203—
    • H10P74/23—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24592—Inspection and quality control of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
IL324016A 2023-05-05 2025-10-16 מדידת מימד קריטי מדויקת ומדויקת על ידי מידול עיוות טעינה מקומי IL324016A (he)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202363464503P 2023-05-05 2023-05-05
PCT/EP2024/059488 WO2024231002A1 (en) 2023-05-05 2024-04-08 Precise and accurate critical dimension measurement by modeling local charging distortion

Publications (1)

Publication Number Publication Date
IL324016A true IL324016A (he) 2025-12-01

Family

ID=90721161

Family Applications (1)

Application Number Title Priority Date Filing Date
IL324016A IL324016A (he) 2023-05-05 2025-10-16 מדידת מימד קריטי מדויקת ומדויקת על ידי מידול עיוות טעינה מקומי

Country Status (5)

Country Link
KR (1) KR20260003699A (he)
CN (1) CN121039774A (he)
IL (1) IL324016A (he)
TW (1) TW202509987A (he)
WO (1) WO2024231002A1 (he)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9691588B2 (en) 2015-03-10 2017-06-27 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
US9922799B2 (en) 2015-07-21 2018-03-20 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
CN111681939B (zh) 2015-07-22 2023-10-27 Asml荷兰有限公司 多个带电粒子束的装置
FR3060751B1 (fr) * 2016-12-15 2019-05-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de caracterisation par microscopie electronique a balayage cdsem
US11139142B2 (en) * 2019-05-23 2021-10-05 Applied Materials, Inc. High-resolution three-dimensional profiling of features in advanced semiconductor devices in a non-destructive manner using electron beam scanning electron microscopy
EP4060600A1 (en) * 2021-03-19 2022-09-21 ASML Netherlands B.V. Sem image enhancement

Also Published As

Publication number Publication date
WO2024231002A1 (en) 2024-11-14
TW202509987A (zh) 2025-03-01
KR20260003699A (ko) 2026-01-07
CN121039774A (zh) 2025-11-28

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