IL321190A - חיישני תמונה עם מבנה דיפוזיה צף מתכוונן - Google Patents
חיישני תמונה עם מבנה דיפוזיה צף מתכוונןInfo
- Publication number
- IL321190A IL321190A IL321190A IL32119025A IL321190A IL 321190 A IL321190 A IL 321190A IL 321190 A IL321190 A IL 321190A IL 32119025 A IL32119025 A IL 32119025A IL 321190 A IL321190 A IL 321190A
- Authority
- IL
- Israel
- Prior art keywords
- image sensors
- floating diffusion
- diffusion structure
- tunable floating
- tunable
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
- H10F39/1538—Time-delay and integration
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8033—Photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202363440674P | 2023-01-23 | 2023-01-23 | |
| US18/404,530 US20240250110A1 (en) | 2023-01-23 | 2024-01-04 | Image sensors with a tunable floating diffusion structure |
| PCT/US2024/011903 WO2024158603A1 (en) | 2023-01-23 | 2024-01-18 | Image sensors with a tunable floating diffusion structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL321190A true IL321190A (he) | 2025-07-01 |
Family
ID=91953055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL321190A IL321190A (he) | 2023-01-23 | 2025-05-29 | חיישני תמונה עם מבנה דיפוזיה צף מתכוונן |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20240250110A1 (he) |
| EP (1) | EP4655824A1 (he) |
| JP (1) | JP2026504798A (he) |
| KR (1) | KR20250136809A (he) |
| CN (1) | CN120419318A (he) |
| IL (1) | IL321190A (he) |
| TW (1) | TW202504078A (he) |
| WO (1) | WO2024158603A1 (he) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12610640B2 (en) * | 2023-10-31 | 2026-04-21 | Kla Corporation | Back-illuminated sensor and method of making same |
| US12484316B2 (en) | 2024-02-29 | 2025-11-25 | Kla Corporation | CVD boron uniformity overcoming loading effects |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7253461B2 (en) * | 2005-05-27 | 2007-08-07 | Dialog Imaging Systems Gmbh | Snapshot CMOS image sensor with high shutter rejection ratio |
| US8742311B2 (en) * | 2012-02-27 | 2014-06-03 | Omnivision Technologies, Inc. | Enhanced pixel cell architecture for an image sensor having a direct output from a buried channel source follower transistor to a bit line |
| US9410901B2 (en) * | 2014-03-17 | 2016-08-09 | Kla-Tencor Corporation | Image sensor, an inspection system and a method of inspecting an article |
| US10778925B2 (en) * | 2016-04-06 | 2020-09-15 | Kla-Tencor Corporation | Multiple column per channel CCD sensor architecture for inspection and metrology |
| US11011560B2 (en) * | 2017-12-26 | 2021-05-18 | Alexander Krymski | Image sensors, methods, and high dynamic range pixels with variable capacitance |
-
2024
- 2024-01-04 US US18/404,530 patent/US20240250110A1/en active Pending
- 2024-01-18 CN CN202480005944.XA patent/CN120419318A/zh active Pending
- 2024-01-18 WO PCT/US2024/011903 patent/WO2024158603A1/en not_active Ceased
- 2024-01-18 JP JP2025536944A patent/JP2026504798A/ja active Pending
- 2024-01-18 KR KR1020257019137A patent/KR20250136809A/ko active Pending
- 2024-01-18 EP EP24747566.8A patent/EP4655824A1/en active Pending
- 2024-01-23 TW TW113102508A patent/TW202504078A/zh unknown
-
2025
- 2025-05-29 IL IL321190A patent/IL321190A/he unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN120419318A (zh) | 2025-08-01 |
| TW202504078A (zh) | 2025-01-16 |
| WO2024158603A1 (en) | 2024-08-02 |
| KR20250136809A (ko) | 2025-09-16 |
| EP4655824A1 (en) | 2025-12-03 |
| JP2026504798A (ja) | 2026-02-10 |
| US20240250110A1 (en) | 2024-07-25 |
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