IL31355A - Method of fabricating monolithic semiconductor devices - Google Patents

Method of fabricating monolithic semiconductor devices

Info

Publication number
IL31355A
IL31355A IL31355A IL3135568A IL31355A IL 31355 A IL31355 A IL 31355A IL 31355 A IL31355 A IL 31355A IL 3135568 A IL3135568 A IL 3135568A IL 31355 A IL31355 A IL 31355A
Authority
IL
Israel
Prior art keywords
semiconductor devices
monolithic semiconductor
fabricating monolithic
fabricating
devices
Prior art date
Application number
IL31355A
Other languages
English (en)
Other versions
IL31355A0 (en
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IL31355A0 publication Critical patent/IL31355A0/xx
Publication of IL31355A publication Critical patent/IL31355A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/765Making of isolation regions between components by field effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
IL31355A 1968-02-05 1968-12-31 Method of fabricating monolithic semiconductor devices IL31355A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70316568A 1968-02-05 1968-02-05

Publications (2)

Publication Number Publication Date
IL31355A0 IL31355A0 (en) 1969-02-27
IL31355A true IL31355A (en) 1971-11-29

Family

ID=24824294

Family Applications (1)

Application Number Title Priority Date Filing Date
IL31355A IL31355A (en) 1968-02-05 1968-12-31 Method of fabricating monolithic semiconductor devices

Country Status (7)

Country Link
BE (1) BE726353A (de)
CH (1) CH502000A (de)
DE (1) DE1904503B2 (de)
ES (1) ES363184A1 (de)
FR (1) FR1600658A (de)
IL (1) IL31355A (de)
NL (1) NL6901819A (de)

Also Published As

Publication number Publication date
DE1904503B2 (de) 1971-06-03
FR1600658A (de) 1970-07-27
NL6901819A (de) 1969-08-07
CH502000A (de) 1971-01-15
DE1904503A1 (de) 1969-11-27
BE726353A (de) 1969-05-29
ES363184A1 (es) 1970-11-16
IL31355A0 (en) 1969-02-27

Similar Documents

Publication Publication Date Title
GB1348391A (en) Methods of manufacturing semiconductor devices
ZA706960B (en) Fabrication of semiconductor devices
GB1124202A (en) Method of manufacturing semiconductor devices
MY7400250A (en) Fabricating of semiconductor devices
IL31358A0 (en) Method of fabricating monolithic semiconductor devices
MY7300379A (en) Method of fabricating semiconductor devices
GB1343334A (en) Fabrication of semiconductor devices
CA920034A (en) Method of manufacturing semiconductor compounds
IL31355A (en) Method of fabricating monolithic semiconductor devices
CA779532A (en) Method of fabricating semiconductor devices
MY7400217A (en) Method of fabricating semiconductor devices
AU428717B2 (en) Method of manufacturing semiconductor devices
CA782735A (en) Method of manufacturing semiconductor devices
CA792443A (en) Method of manufacturing semiconductor devices
CA800200A (en) Manufacturing method of semiconductor devices
CA686529A (en) Method of manufacturing photo-electric semi-conductor devices
CA800196A (en) Method of manufacturing semi-conductor device
AU5263169A (en) Method of manufacturing semiconductor devices
CA858502A (en) Method of manufacturing semiconductor devices
CA838347A (en) Method of manufacturing semiconductor devices
CA789200A (en) Method of making semiconductor devices
AU4919169A (en) Method of forming monolithic semiconductor integrated circuit devices
CA797445A (en) Method of forming semiconductor junctions
MY7400214A (en) Fabrication of complementary semiconductor devices
CA724333A (en) Method of fabricating semiconductor devices