IL283141A - Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film - Google Patents

Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film

Info

Publication number
IL283141A
IL283141A IL283141A IL28314121A IL283141A IL 283141 A IL283141 A IL 283141A IL 283141 A IL283141 A IL 283141A IL 28314121 A IL28314121 A IL 28314121A IL 283141 A IL283141 A IL 283141A
Authority
IL
Israel
Prior art keywords
cobalt
manufacturing
thin film
containing thin
complex
Prior art date
Application number
IL283141A
Other languages
Hebrew (he)
Other versions
IL283141B1 (en
Inventor
Hiroyuki Oike
Teppei Hayakawa
Yuki Yamamoto
Taishi Furukawa
Ken-Ichi Tada
Original Assignee
Tosoh Corp
Sagami Chem Res Inst
Hiroyuki Oike
Teppei Hayakawa
Yuki Yamamoto
Taishi Furukawa
Tada Ken Ichi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Corp, Sagami Chem Res Inst, Hiroyuki Oike, Teppei Hayakawa, Yuki Yamamoto, Taishi Furukawa, Tada Ken Ichi filed Critical Tosoh Corp
Publication of IL283141A publication Critical patent/IL283141A/en
Publication of IL283141B1 publication Critical patent/IL283141B1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/06Cobalt compounds
    • C07F15/065Cobalt compounds without a metal-carbon linkage
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C49/00Ketones; Ketenes; Dimeric ketenes; Ketonic chelates
    • C07C49/04Saturated compounds containing keto groups bound to acyclic carbon atoms
    • C07C49/12Ketones containing more than one keto group
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C49/00Ketones; Ketenes; Dimeric ketenes; Ketonic chelates
    • C07C49/04Saturated compounds containing keto groups bound to acyclic carbon atoms
    • C07C49/12Ketones containing more than one keto group
    • C07C49/14Acetylacetone, i.e. 2,4-pentanedione
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/06Cobalt compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00Metallocenes
    • C07F17/02Metallocenes of metals of Groups 8, 9 or 10 of the Periodic Table
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45553Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
IL283141A 2018-11-12 2019-11-08 Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film IL283141B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018212049 2018-11-12
JP2019022221 2019-02-12
JP2019132379 2019-07-18
PCT/JP2019/043979 WO2020100765A1 (en) 2018-11-12 2019-11-08 Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film

Publications (2)

Publication Number Publication Date
IL283141A true IL283141A (en) 2021-06-30
IL283141B1 IL283141B1 (en) 2024-08-01

Family

ID=70731136

Family Applications (1)

Application Number Title Priority Date Filing Date
IL283141A IL283141B1 (en) 2018-11-12 2019-11-08 Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film

Country Status (8)

Country Link
US (1) US11753429B2 (en)
EP (1) EP3882234B1 (en)
JP (1) JP7378267B2 (en)
KR (1) KR20210092208A (en)
CN (1) CN112839924B (en)
IL (1) IL283141B1 (en)
TW (1) TW202030197A (en)
WO (1) WO2020100765A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022049605A (en) * 2020-09-16 2022-03-29 キオクシア株式会社 Semiconductor device and semiconductor storage device
KR102569201B1 (en) * 2021-06-04 2023-08-23 주식회사 한솔케미칼 Method of synthesizing organometallic compound and method for the formation of thin films using thereof
US20240337014A1 (en) * 2021-07-12 2024-10-10 Adeka Corporation Cobalt compound, thin-film forming raw material, thin-film, and method of producing thin-film

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02169547A (en) 1988-12-22 1990-06-29 Mitsui Petrochem Ind Ltd Cobalt complex and production of hydroxyl group-containing compound using the same
JPH0314534A (en) 1989-06-10 1991-01-23 Mitsui Petrochem Ind Ltd Production of beta-hydroxycarboxylic acid derivative
JP5042548B2 (en) 2005-08-04 2012-10-03 東ソー株式会社 Metal-containing compound, method for producing the same, metal-containing thin film and method for forming the same
US7691984B2 (en) 2007-11-27 2010-04-06 Air Products And Chemicals, Inc. Metal complexes of tridentate β-ketoiminates
KR20100071463A (en) * 2008-12-19 2010-06-29 주식회사 유피케미칼 Organometallic precursors for deposition of metal or metal oxide thin films, and deposition process of the thin films
TWI550119B (en) 2010-11-02 2016-09-21 宇部興產股份有限公司 (amidoaminoalkane) metal compound and method for producing thin film containing metal using the metal compound
US9171842B2 (en) 2012-07-30 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Sequential circuit and semiconductor device
KR102193925B1 (en) 2012-09-25 2020-12-22 엔테그리스, 아이엔씨. Cobalt precursors for low temperature ald or cvd of cobalt-based thin films
TW201602120A (en) * 2014-06-09 2016-01-16 東曹股份有限公司 Cobalt complex, method for producing same, and cobalt-containing thin film, and method for producing same
CA2973773C (en) 2015-02-02 2023-10-17 Kancera Ab 2-phenyl-3h-imidazo[4,5-b]pyridine derivatives useful as inhibitors of mammalian tyrosine kinase ror1 activity
JP2016222568A (en) 2015-05-28 2016-12-28 宇部興産株式会社 Bis(silylamideaminoalkane)iron compound and manufacturing method of iron-containing film using the iron compound
JP2017081857A (en) * 2015-10-29 2017-05-18 宇部興産株式会社 Bis(silylamideaminoalkane)metal compound and manufacturing method of metal-containing film using the metal compound
JP6808281B2 (en) * 2015-12-16 2021-01-06 東ソー株式会社 Substituted cyclopentadienyl cobalt complex and its production method, cobalt-containing thin film and its production method
JP2019132379A (en) 2018-02-01 2019-08-08 積水化学工業株式会社 Diaphragm valve
US11440929B2 (en) * 2018-06-19 2022-09-13 Versum Materials Us, Llc Bis(diazadiene)cobalt compounds, method of making and method of use thereof
US12104245B2 (en) * 2019-11-01 2024-10-01 Adeka Corporation Compound, thin-film forming raw material that contains said compound, and method of manufacturing thin film
US20220025514A1 (en) * 2020-07-21 2022-01-27 Wayne State University Precursors And Processes For The Thermal ALD Of Cobalt Metal Thin Films

Also Published As

Publication number Publication date
EP3882234A4 (en) 2022-08-31
KR20210092208A (en) 2021-07-23
EP3882234B1 (en) 2024-05-08
US20220017553A1 (en) 2022-01-20
IL283141B1 (en) 2024-08-01
EP3882234A1 (en) 2021-09-22
JP7378267B2 (en) 2023-11-13
TW202030197A (en) 2020-08-16
CN112839924B (en) 2023-07-07
US11753429B2 (en) 2023-09-12
CN112839924A (en) 2021-05-25
WO2020100765A1 (en) 2020-05-22
JP2021011468A (en) 2021-02-04

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