IL283141A - Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film - Google Patents
Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin filmInfo
- Publication number
- IL283141A IL283141A IL283141A IL28314121A IL283141A IL 283141 A IL283141 A IL 283141A IL 283141 A IL283141 A IL 283141A IL 28314121 A IL28314121 A IL 28314121A IL 283141 A IL283141 A IL 283141A
- Authority
- IL
- Israel
- Prior art keywords
- cobalt
- manufacturing
- thin film
- containing thin
- complex
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 2
- 229910017052 cobalt Inorganic materials 0.000 title 1
- 239000010941 cobalt Substances 0.000 title 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 title 1
- 150000004700 cobalt complex Chemical class 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/06—Cobalt compounds
- C07F15/065—Cobalt compounds without a metal-carbon linkage
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C49/00—Ketones; Ketenes; Dimeric ketenes; Ketonic chelates
- C07C49/04—Saturated compounds containing keto groups bound to acyclic carbon atoms
- C07C49/12—Ketones containing more than one keto group
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C49/00—Ketones; Ketenes; Dimeric ketenes; Ketonic chelates
- C07C49/04—Saturated compounds containing keto groups bound to acyclic carbon atoms
- C07C49/12—Ketones containing more than one keto group
- C07C49/14—Acetylacetone, i.e. 2,4-pentanedione
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/06—Cobalt compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F17/00—Metallocenes
- C07F17/02—Metallocenes of metals of Groups 8, 9 or 10 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018212049 | 2018-11-12 | ||
JP2019022221 | 2019-02-12 | ||
JP2019132379 | 2019-07-18 | ||
PCT/JP2019/043979 WO2020100765A1 (en) | 2018-11-12 | 2019-11-08 | Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film |
Publications (2)
Publication Number | Publication Date |
---|---|
IL283141A true IL283141A (en) | 2021-06-30 |
IL283141B1 IL283141B1 (en) | 2024-08-01 |
Family
ID=70731136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL283141A IL283141B1 (en) | 2018-11-12 | 2019-11-08 | Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film |
Country Status (8)
Country | Link |
---|---|
US (1) | US11753429B2 (en) |
EP (1) | EP3882234B1 (en) |
JP (1) | JP7378267B2 (en) |
KR (1) | KR20210092208A (en) |
CN (1) | CN112839924B (en) |
IL (1) | IL283141B1 (en) |
TW (1) | TW202030197A (en) |
WO (1) | WO2020100765A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022049605A (en) * | 2020-09-16 | 2022-03-29 | キオクシア株式会社 | Semiconductor device and semiconductor storage device |
KR102569201B1 (en) * | 2021-06-04 | 2023-08-23 | 주식회사 한솔케미칼 | Method of synthesizing organometallic compound and method for the formation of thin films using thereof |
US20240337014A1 (en) * | 2021-07-12 | 2024-10-10 | Adeka Corporation | Cobalt compound, thin-film forming raw material, thin-film, and method of producing thin-film |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02169547A (en) | 1988-12-22 | 1990-06-29 | Mitsui Petrochem Ind Ltd | Cobalt complex and production of hydroxyl group-containing compound using the same |
JPH0314534A (en) | 1989-06-10 | 1991-01-23 | Mitsui Petrochem Ind Ltd | Production of beta-hydroxycarboxylic acid derivative |
JP5042548B2 (en) | 2005-08-04 | 2012-10-03 | 東ソー株式会社 | Metal-containing compound, method for producing the same, metal-containing thin film and method for forming the same |
US7691984B2 (en) | 2007-11-27 | 2010-04-06 | Air Products And Chemicals, Inc. | Metal complexes of tridentate β-ketoiminates |
KR20100071463A (en) * | 2008-12-19 | 2010-06-29 | 주식회사 유피케미칼 | Organometallic precursors for deposition of metal or metal oxide thin films, and deposition process of the thin films |
TWI550119B (en) | 2010-11-02 | 2016-09-21 | 宇部興產股份有限公司 | (amidoaminoalkane) metal compound and method for producing thin film containing metal using the metal compound |
US9171842B2 (en) | 2012-07-30 | 2015-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Sequential circuit and semiconductor device |
KR102193925B1 (en) | 2012-09-25 | 2020-12-22 | 엔테그리스, 아이엔씨. | Cobalt precursors for low temperature ald or cvd of cobalt-based thin films |
TW201602120A (en) * | 2014-06-09 | 2016-01-16 | 東曹股份有限公司 | Cobalt complex, method for producing same, and cobalt-containing thin film, and method for producing same |
CA2973773C (en) | 2015-02-02 | 2023-10-17 | Kancera Ab | 2-phenyl-3h-imidazo[4,5-b]pyridine derivatives useful as inhibitors of mammalian tyrosine kinase ror1 activity |
JP2016222568A (en) | 2015-05-28 | 2016-12-28 | 宇部興産株式会社 | Bis(silylamideaminoalkane)iron compound and manufacturing method of iron-containing film using the iron compound |
JP2017081857A (en) * | 2015-10-29 | 2017-05-18 | 宇部興産株式会社 | Bis(silylamideaminoalkane)metal compound and manufacturing method of metal-containing film using the metal compound |
JP6808281B2 (en) * | 2015-12-16 | 2021-01-06 | 東ソー株式会社 | Substituted cyclopentadienyl cobalt complex and its production method, cobalt-containing thin film and its production method |
JP2019132379A (en) | 2018-02-01 | 2019-08-08 | 積水化学工業株式会社 | Diaphragm valve |
US11440929B2 (en) * | 2018-06-19 | 2022-09-13 | Versum Materials Us, Llc | Bis(diazadiene)cobalt compounds, method of making and method of use thereof |
US12104245B2 (en) * | 2019-11-01 | 2024-10-01 | Adeka Corporation | Compound, thin-film forming raw material that contains said compound, and method of manufacturing thin film |
US20220025514A1 (en) * | 2020-07-21 | 2022-01-27 | Wayne State University | Precursors And Processes For The Thermal ALD Of Cobalt Metal Thin Films |
-
2019
- 2019-10-30 JP JP2019196928A patent/JP7378267B2/en active Active
- 2019-11-07 TW TW108140511A patent/TW202030197A/en unknown
- 2019-11-08 KR KR1020217014107A patent/KR20210092208A/en active Search and Examination
- 2019-11-08 WO PCT/JP2019/043979 patent/WO2020100765A1/en unknown
- 2019-11-08 EP EP19884650.3A patent/EP3882234B1/en active Active
- 2019-11-08 US US17/292,819 patent/US11753429B2/en active Active
- 2019-11-08 IL IL283141A patent/IL283141B1/en unknown
- 2019-11-08 CN CN201980067199.0A patent/CN112839924B/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP3882234A4 (en) | 2022-08-31 |
KR20210092208A (en) | 2021-07-23 |
EP3882234B1 (en) | 2024-05-08 |
US20220017553A1 (en) | 2022-01-20 |
IL283141B1 (en) | 2024-08-01 |
EP3882234A1 (en) | 2021-09-22 |
JP7378267B2 (en) | 2023-11-13 |
TW202030197A (en) | 2020-08-16 |
CN112839924B (en) | 2023-07-07 |
US11753429B2 (en) | 2023-09-12 |
CN112839924A (en) | 2021-05-25 |
WO2020100765A1 (en) | 2020-05-22 |
JP2021011468A (en) | 2021-02-04 |
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