IL216143A0 - Method of determining overlay error - Google Patents

Method of determining overlay error

Info

Publication number
IL216143A0
IL216143A0 IL216143A IL21614311A IL216143A0 IL 216143 A0 IL216143 A0 IL 216143A0 IL 216143 A IL216143 A IL 216143A IL 21614311 A IL21614311 A IL 21614311A IL 216143 A0 IL216143 A0 IL 216143A0
Authority
IL
Israel
Prior art keywords
overlay error
determining overlay
determining
error
overlay
Prior art date
Application number
IL216143A
Other versions
IL216143A (en
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of IL216143A0 publication Critical patent/IL216143A0/en
Publication of IL216143A publication Critical patent/IL216143A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706839—Modelling, e.g. modelling scattering or solving inverse problems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
IL216143A 2009-05-11 2011-11-03 Method of determining overlay error IL216143A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17708109P 2009-05-11 2009-05-11
PCT/EP2010/054820 WO2010130516A1 (en) 2009-05-11 2010-04-13 Method of determining overlay error

Publications (2)

Publication Number Publication Date
IL216143A0 true IL216143A0 (en) 2012-01-31
IL216143A IL216143A (en) 2016-02-29

Family

ID=42289556

Family Applications (1)

Application Number Title Priority Date Filing Date
IL216143A IL216143A (en) 2009-05-11 2011-11-03 Method of determining overlay error

Country Status (8)

Country Link
US (1) US8363220B2 (en)
JP (1) JP5277348B2 (en)
KR (1) KR101654599B1 (en)
CN (1) CN102422226B (en)
IL (1) IL216143A (en)
NL (1) NL2004542A (en)
TW (1) TWI410756B (en)
WO (1) WO2010130516A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101761735B1 (en) 2012-03-27 2017-07-26 에이에스엠엘 네델란즈 비.브이. Metrology method and apparatus, lithographic system and device manufacturing method
US8817273B2 (en) * 2012-04-24 2014-08-26 Nanometrics Incorporated Dark field diffraction based overlay
JP6077647B2 (en) 2012-05-29 2017-02-08 エーエスエムエル ネザーランズ ビー．ブイ． Metrology method and apparatus, substrate, lithography system and device manufacturing method
JP6133980B2 (en) * 2012-07-05 2017-05-24 エーエスエムエル ネザーランズ ビー．ブイ． Metrology for lithography
KR102202523B1 (en) * 2013-07-18 2021-01-13 케이엘에이 코포레이션 Illumination configurations for scatterometry measurements
US9189705B2 (en) 2013-08-08 2015-11-17 JSMSW Technology LLC Phase-controlled model-based overlay measurement systems and methods
US9053284B2 (en) * 2013-09-04 2015-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for overlay control
CN104656383B (en) * 2013-11-19 2016-08-31 中芯国际集成电路制造(上海)有限公司 Exposure method and system, exposure sources control system
CN105900015B (en) * 2013-11-26 2019-07-05 Asml荷兰有限公司 Method, equipment and substrate for photoetching measurement
US10185303B2 (en) * 2015-02-21 2019-01-22 Kla-Tencor Corporation Optimizing computational efficiency by multiple truncation of spatial harmonics
NL2017271A (en) * 2015-08-20 2017-02-22 Asml Netherlands Bv Metrology method and apparatus, substrates for use in such methods, lithographic system and device manufacturing method
US20170256465A1 (en) * 2016-03-01 2017-09-07 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter
CN109478023B (en) * 2016-07-15 2021-09-10 Asml荷兰有限公司 Method and apparatus for design of metrology target field
TW201923332A (en) * 2017-10-10 2019-06-16 荷蘭商Ａｓｍｌ荷蘭公司 Metrology method and apparatus, computer program and lithographic system
WO2019236084A1 (en) * 2018-06-07 2019-12-12 Kla-Tencor Corporation Overlay measurement using phase and amplitude modeling
KR102669151B1 (en) 2018-10-08 2024-05-27 삼성전자주식회사 Method of Calculating combined model function, method of setting lithography apparatus, lithography method lithography apparatus
CN110531591B (en) * 2019-08-30 2021-11-26 上海华力微电子有限公司 Overlay precision correction method

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5300786A (en) * 1992-10-28 1994-04-05 International Business Machines Corporation Optical focus phase shift test pattern, monitoring system and process
JP3550605B2 (en) * 1995-09-25 2004-08-04 株式会社ニコン Position detection method, exposure method using the same, semiconductor device using the exposure method, method for manufacturing liquid crystal display element or thin-film magnetic head, position detection apparatus, and exposure apparatus having the same
JP2000315642A (en) * 1999-04-30 2000-11-14 Nec Corp Method and device for measuring deviation in position and distortion due to aberration and reticle
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
SG152898A1 (en) * 2002-09-20 2009-06-29 Asml Netherlands Bv Alignment systems and methods for lithographic systems
US7112890B2 (en) * 2003-10-30 2006-09-26 Asml Holding N.V. Tunable alignment geometry
JP2006012867A (en) * 2004-06-21 2006-01-12 Nikon Corp Method and device for measuring mark, method, device and system for exposure
US7791727B2 (en) * 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7532305B2 (en) * 2006-03-28 2009-05-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using overlay measurement
US7391513B2 (en) * 2006-03-29 2008-06-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using overlay measurement quality indication
US7564555B2 (en) * 2006-08-15 2009-07-21 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7573584B2 (en) * 2006-09-25 2009-08-11 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7619737B2 (en) * 2007-01-22 2009-11-17 Asml Netherlands B.V Method of measurement, an inspection apparatus and a lithographic apparatus
DE102007046850B4 (en) * 2007-09-29 2014-05-22 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Method for determining an overlay accuracy

Also Published As

Publication number Publication date
KR101654599B1 (en) 2016-09-06
JP2012526402A (en) 2012-10-25
TWI410756B (en) 2013-10-01
CN102422226A (en) 2012-04-18
CN102422226B (en) 2014-04-09
WO2010130516A1 (en) 2010-11-18
TW201120580A (en) 2011-06-16
KR20120023080A (en) 2012-03-12
US20100284008A1 (en) 2010-11-11
IL216143A (en) 2016-02-29
JP5277348B2 (en) 2013-08-28
NL2004542A (en) 2010-11-15
US8363220B2 (en) 2013-01-29

Similar Documents

Publication Publication Date Title
IL216143A0 (en) Method of determining overlay error
PL3050974T3 (en) Method for detection of humidity-compromised urine-test-strips
GB2488449B (en) System for determination of downhole position
ZA201202299B (en) Method for decreasing immunigenicity
EP2552873A4 (en) Method for making hexafluoro-2-butene
EP2513627A4 (en) Method for coating measurement
PL2553405T3 (en) Method for calibrating wim-sensors
GB2473933B (en) Accelerometer-only calibration method
EP2443458A4 (en) Method for measuring lipoprotein-specific apolipoproteins
PL2376507T3 (en) Method of making hydroxymethylphosphonates
HUE066534T2 (en) Method for determining reference unit
TWI368185B (en) Method for detecting shadow of object
IL214647A0 (en) Method for inhibiting neurodegeneration
EP2466294A4 (en) Method for measuring autophagy
GB2469152B (en) Calibration method
GB0901444D0 (en) Method
EP2446250A4 (en) Method of detecting contaminants
HUP1000432A2 (en) Method for making shoes
GB201007454D0 (en) Method of determining tolerance
ZA201203382B (en) Method for determining the dielectric permittvity of a dielectric object
IL217830A0 (en) Method of detecting pneumocandin compounds
ZA201107206B (en) Method for synchronising measurements
GB0900560D0 (en) Method
MY158079A (en) Method for detrmination of dissolved hydrocarbons
GB0916646D0 (en) New method of calculating areas

Legal Events

Date Code Title Description
FF Patent granted
KB Patent renewed
KB Patent renewed