IL181209A0 - A method of measurement - Google Patents

A method of measurement

Info

Publication number
IL181209A0
IL181209A0 IL181209A IL18120907A IL181209A0 IL 181209 A0 IL181209 A0 IL 181209A0 IL 181209 A IL181209 A IL 181209A IL 18120907 A IL18120907 A IL 18120907A IL 181209 A0 IL181209 A0 IL 181209A0
Authority
IL
Israel
Prior art keywords
measurement
Prior art date
Application number
IL181209A
Original Assignee
Nova Measuring Instr Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nova Measuring Instr Ltd filed Critical Nova Measuring Instr Ltd
Priority to IL181209A priority Critical patent/IL181209A0/en
Publication of IL181209A0 publication Critical patent/IL181209A0/en
Priority to US12/526,084 priority patent/US8142965B2/en
Priority to PCT/IL2008/000172 priority patent/WO2008096364A2/en
Priority to TW097104837A priority patent/TWI440984B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/303—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces using photoelectric detection means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
IL181209A 2007-02-07 2007-02-07 A method of measurement IL181209A0 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IL181209A IL181209A0 (en) 2007-02-07 2007-02-07 A method of measurement
US12/526,084 US8142965B2 (en) 2007-02-07 2008-02-07 Method and system for measuring in patterned structures
PCT/IL2008/000172 WO2008096364A2 (en) 2007-02-07 2008-02-07 Method and system for measurng in patterned structures
TW097104837A TWI440984B (en) 2007-02-07 2008-02-12 Method and system for measuring in patterned structures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IL181209A IL181209A0 (en) 2007-02-07 2007-02-07 A method of measurement

Publications (1)

Publication Number Publication Date
IL181209A0 true IL181209A0 (en) 2007-07-04

Family

ID=39590327

Family Applications (1)

Application Number Title Priority Date Filing Date
IL181209A IL181209A0 (en) 2007-02-07 2007-02-07 A method of measurement

Country Status (4)

Country Link
US (1) US8142965B2 (en)
IL (1) IL181209A0 (en)
TW (1) TWI440984B (en)
WO (1) WO2008096364A2 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8010930B2 (en) * 2008-12-29 2011-08-30 International Business Machine Corporation Extracting consistent compact model parameters for related devices
CN102884396B (en) * 2010-02-25 2015-12-16 诺威量测设备股份有限公司 The method and system measured is carried out in pattern structure
US10295329B2 (en) * 2011-08-01 2019-05-21 Nova Measuring Instruments Ltd. Monitoring system and method for verifying measurements in patterned structures
CN103713471B (en) * 2012-10-08 2016-03-09 合肥京东方光电科技有限公司 A kind of means for correcting of key size measuring and method
US9772562B2 (en) 2013-12-05 2017-09-26 Asml Netherlands B.V. Method and apparatus for measuring a structure on a substrate, models for error correction, computer program products for implementing such methods and apparatus
US9146193B2 (en) 2014-01-03 2015-09-29 Micron Technology, Inc. Scatterometry metrology methods and methods of modeling formation of a vertical region of a multilayer semiconductor substrate to comprise a scatterometry target
US20170018069A1 (en) * 2014-02-23 2017-01-19 Globalfoundries Inc. Hybrid metrology technique
KR101844203B1 (en) * 2014-11-02 2018-05-14 노바 메주어링 인스트루먼츠 엘티디. Method and system for optical metrology in patterned structures
SG11201907074RA (en) * 2017-02-28 2019-09-27 Kla Tencor Corp Determining the impacts of stochastic behavior on overlay metrology data
US10664955B2 (en) 2017-04-13 2020-05-26 Fractilia, Llc Edge detection system and its use for machine learning
US11521825B2 (en) 2017-04-13 2022-12-06 Fractilia, Llc System and method for predicting stochastic-aware process window and yield and their use for process monitoring and control
US11508546B2 (en) 2017-04-13 2022-11-22 Fractilia, Llc System and method for low-noise edge detection and its use for process monitoring and control
US12142454B2 (en) 2017-04-13 2024-11-12 Fractilla, LLC Detection of probabilistic process windows
US10648801B2 (en) 2017-04-13 2020-05-12 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US10488188B2 (en) 2017-04-13 2019-11-26 Fractilia, Llc System and method for removing noise from roughness measurements
US11355306B2 (en) 2017-04-13 2022-06-07 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US11380516B2 (en) 2017-04-13 2022-07-05 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US10522322B2 (en) 2017-04-13 2019-12-31 Fractilia, Llc System and method for generating and analyzing roughness measurements
US10656532B2 (en) 2017-04-13 2020-05-19 Fractilia, Llc Edge detection system and its use for optical proximity correction
US11361937B2 (en) 2017-04-13 2022-06-14 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US10176966B1 (en) 2017-04-13 2019-01-08 Fractilia, Llc Edge detection system
KR102473979B1 (en) 2017-09-27 2022-12-06 에이에스엠엘 네델란즈 비.브이. How to Determine Control Parameters of a Device Manufacturing Process

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL148485A (en) * 2002-03-04 2008-07-08 Nova Measuring Instr Ltd Optical measurement of patterned structure parameters
JP3734450B2 (en) * 2002-03-08 2006-01-11 三星電子株式会社 Edge roughness analysis reticle and edge roughness analysis method using the same

Also Published As

Publication number Publication date
TWI440984B (en) 2014-06-11
US20100099033A1 (en) 2010-04-22
TW200907584A (en) 2009-02-16
WO2008096364A2 (en) 2008-08-14
US8142965B2 (en) 2012-03-27
WO2008096364A3 (en) 2008-09-25

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