IL165282A0 - Method for producing a component comprising a conductor structure that issuitable for use at high frequencies - Google Patents

Method for producing a component comprising a conductor structure that issuitable for use at high frequencies

Info

Publication number
IL165282A0
IL165282A0 IL16528203A IL16528203A IL165282A0 IL 165282 A0 IL165282 A0 IL 165282A0 IL 16528203 A IL16528203 A IL 16528203A IL 16528203 A IL16528203 A IL 16528203A IL 165282 A0 IL165282 A0 IL 165282A0
Authority
IL
Israel
Prior art keywords
issuitable
producing
component
high frequencies
conductor structure
Prior art date
Application number
IL16528203A
Other languages
English (en)
Original Assignee
Schott Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10222609A external-priority patent/DE10222609B4/de
Priority claimed from PCT/EP2003/003907 external-priority patent/WO2003088347A2/de
Application filed by Schott Ag filed Critical Schott Ag
Publication of IL165282A0 publication Critical patent/IL165282A0/xx

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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
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    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C14/00Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
    • C03C14/006Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
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    • C03C15/00Surface treatment of glass, not in the form of fibres or filaments, by etching
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    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/02Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
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    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
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    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/076Glass compositions containing silica with 40% to 90% silica, by weight
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    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/076Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089Glass compositions containing silica with 40% to 90% silica, by weight containing boron
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    • C03C4/00Compositions for glass with special properties
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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    • H01L21/02161Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing more than one metal element
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    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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IL16528203A 2002-05-23 2003-05-23 Method for producing a component comprising a conductor structure that issuitable for use at high frequencies IL165282A0 (en)

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DE10222609A DE10222609B4 (de) 2002-04-15 2002-05-23 Verfahren zur Herstellung strukturierter Schichten auf Substraten und verfahrensgemäß beschichtetes Substrat
PCT/EP2003/003907 WO2003088347A2 (de) 2002-04-15 2003-04-15 Verfahren zum verbinden von substraten und verbundelement
PCT/EP2003/005415 WO2003100859A2 (de) 2002-05-23 2003-05-23 Verfahren zur herstellung eines bauelements mit hochfrequenztauglicher leiteranordnung und entsprechendes bauelement

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EP1495491B1 (de) 2002-04-15 2020-12-16 Schott AG Verfahren zum verbinden von substraten und verbundelement
WO2003100846A2 (de) 2002-05-23 2003-12-04 Schott Ag Glasmaterial für hochfrequenzanwendungen

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EP1518275A2 (de) 2005-03-30
CA2485185A1 (en) 2003-12-04
AU2003237668A1 (en) 2003-12-12
EP1518275B1 (de) 2015-05-06
CN1685507A (zh) 2005-10-19
WO2003100859A3 (de) 2005-01-20
US20060012005A1 (en) 2006-01-19
WO2003100859A9 (de) 2005-04-07
CN1685507B (zh) 2010-08-18
CA2484794A1 (en) 2003-12-04
US7786002B2 (en) 2010-08-31
WO2003100859A2 (de) 2003-12-04
AU2003237668A8 (en) 2003-12-12

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