HUT53668A - Sublimating process for producing technecium-solution
- Google Patents
Sublimating process for producing technecium-solution
Info
Publication number
HUT53668A
HUT53668AHU79389AHU79389AHUT53668AHU T53668 AHUT53668 AHU T53668AHU 79389 AHU79389 AHU 79389AHU 79389 AHU79389 AHU 79389AHU T53668 AHUT53668 AHU T53668A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mta Izotopkutato IntezetefiledCriticalMta Izotopkutato Intezete
Priority to HU79389ApriorityCriticalpatent/HUT53668A/en
Publication of HUT53668ApublicationCriticalpatent/HUT53668A/en
V2O5 and Mo2O3 eutectic present in the silicon carbide of a ceramic powder grid is subjected to neutron-radiation which separates from the 99Mo-99mTc from the radioactive parent-daughter element the 99mTc. The ceramic grid is then heated above its m.pt. sublimating the 99mTc2O7 gas which is then condensed on a cool surface and is collected in the form of Na99mTcO4.2
HU79389A1989-02-171989-02-17Sublimating process for producing technecium-solution
HUT53668A
(en)