HK1243822A1 - Super cmos (scmostm) devices on a microelectronic system - Google Patents

Super cmos (scmostm) devices on a microelectronic system

Info

Publication number
HK1243822A1
HK1243822A1 HK18102675.8A HK18102675A HK1243822A1 HK 1243822 A1 HK1243822 A1 HK 1243822A1 HK 18102675 A HK18102675 A HK 18102675A HK 1243822 A1 HK1243822 A1 HK 1243822A1
Authority
HK
Hong Kong
Prior art keywords
scmostm
devices
microelectronic system
super cmos
cmos
Prior art date
Application number
HK18102675.8A
Other languages
Chinese (zh)
Inventor
Augustine Wei-Chun Chang
Pierre Dermy
Original Assignee
Schottky Lsi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schottky Lsi Inc filed Critical Schottky Lsi Inc
Publication of HK1243822A1 publication Critical patent/HK1243822A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66515—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned selective metal deposition simultaneously on the gate and on source or drain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H10B20/38—Doping programmed, e.g. mask ROM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H01L27/1211—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
HK18102675.8A 2014-10-10 2018-02-24 Super cmos (scmostm) devices on a microelectronic system HK1243822A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462062800P 2014-10-10 2014-10-10
PCT/US2015/055020 WO2016057973A1 (en) 2014-10-10 2015-10-09 Super cmos (scmostm) devices on a microelectronic system

Publications (1)

Publication Number Publication Date
HK1243822A1 true HK1243822A1 (en) 2018-07-20

Family

ID=55653885

Family Applications (1)

Application Number Title Priority Date Filing Date
HK18102675.8A HK1243822A1 (en) 2014-10-10 2018-02-24 Super cmos (scmostm) devices on a microelectronic system

Country Status (3)

Country Link
EP (1) EP3216051A4 (en)
HK (1) HK1243822A1 (en)
WO (1) WO2016057973A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10756097B2 (en) 2018-06-29 2020-08-25 International Business Machines Corporation Stacked vertical transistor-based mask-programmable ROM
CN109784483B (en) * 2019-01-24 2022-09-09 电子科技大学 FD-SOI (field-programmable gate array-silicon on insulator) process-based binary convolution neural network in-memory computing accelerator
US10734979B1 (en) * 2019-07-03 2020-08-04 Globalfoundries Inc. Analog-to-digital inverter circuit structure with FDSOI transistors
CN111934657B (en) * 2020-08-13 2023-10-24 南京物间科技有限公司 Low-power-consumption power-on reset and power-off reset circuit
US11315923B2 (en) 2020-09-17 2022-04-26 International Business Machines Corporation Stacked nanosheet inverter
US11387819B2 (en) 2020-12-10 2022-07-12 Qualcomm Incorporated Fault resilient flip-flop with balanced topology and negative feedback
US11894433B2 (en) 2021-06-22 2024-02-06 International Business Machines Corporation Method and structure to improve stacked FET bottom EPI contact
CN113972220B (en) * 2021-09-27 2024-03-15 沈阳工业大学 High-integration central bidirectional Schottky junction type single-tube inverter and manufacturing method thereof
CN114334956B (en) * 2022-03-15 2022-06-07 成都市易冲半导体有限公司 Isolation protection structure of alternating current power switch with extreme negative voltage resistant high-voltage pin
WO2024064145A1 (en) * 2022-09-21 2024-03-28 Schottky Lsi, Inc. Integration of field effect transistors and schottky diodes on a substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2929869C2 (en) * 1979-07-24 1986-04-30 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithic integrated CMOS inverter circuitry
US6590800B2 (en) * 2001-06-15 2003-07-08 Augustine Wei-Chun Chang Schottky diode static random access memory (DSRAM) device, a method for making same, and CFET based DTL
US6720231B2 (en) * 2002-01-28 2004-04-13 International Business Machines Corporation Fin-type resistors
JP4237595B2 (en) * 2003-09-24 2009-03-11 株式会社東芝 Static random access memory
US7928470B2 (en) * 2005-11-25 2011-04-19 Denso Corporation Semiconductor device having super junction MOS transistor and method for manufacturing the same
US8476689B2 (en) * 2008-12-23 2013-07-02 Augustine Wei-Chun Chang Super CMOS devices on a microelectronics system
JP4700125B2 (en) * 2009-07-30 2011-06-15 住友電気工業株式会社 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
EP3216051A1 (en) 2017-09-13
WO2016057973A1 (en) 2016-04-14
EP3216051A4 (en) 2018-06-06

Similar Documents

Publication Publication Date Title
HK1243822A1 (en) Super cmos (scmostm) devices on a microelectronic system
GB2572879B (en) A receiving system
ZA201802754B (en) A connection device
GB2572882B (en) A receiving system
GB2572883B (en) A receiving system
GB2528307B (en) A locking device
PT3278010T (en) A camera system
GB2545634B (en) A combination locking device
GB201503225D0 (en) Linking devices
GB2572888B (en) A receiving system
GB201609686D0 (en) Devices
GB2572890B (en) A receiving system
GB2536086B (en) A receiving system
GB201509719D0 (en) A fluid-metering device
GB2534968B (en) A receiving system
GB2536089B (en) A receiving system
GB201505821D0 (en) A locking device
GB201513858D0 (en) A device
GB201513329D0 (en) A device
GB201512912D0 (en) A device
GB201511616D0 (en) A device
GB201511362D0 (en) A device
GB201511180D0 (en) A device
GB201509258D0 (en) A device
GB201507899D0 (en) A device