HK1007361A1 - Digitally controlled field effect attenuator devices - Google Patents

Digitally controlled field effect attenuator devices

Info

Publication number
HK1007361A1
HK1007361A1 HK98106540A HK98106540A HK1007361A1 HK 1007361 A1 HK1007361 A1 HK 1007361A1 HK 98106540 A HK98106540 A HK 98106540A HK 98106540 A HK98106540 A HK 98106540A HK 1007361 A1 HK1007361 A1 HK 1007361A1
Authority
HK
Hong Kong
Prior art keywords
field effect
digitally controlled
controlled field
attenuator devices
effect attenuator
Prior art date
Application number
HK98106540A
Other languages
English (en)
Inventor
John Michael Golio
Janet Ruth Johnson Golio
Joseph Staudinger
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US07/361,470 priority Critical patent/US5001524A/en
Priority to EP90119958A priority patent/EP0481113B1/en
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to HK98106540A priority patent/HK1007361A1/xx
Publication of HK1007361A1 publication Critical patent/HK1007361A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/22—Attenuating devices
    • H01P1/227—Strip line attenuators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Networks Using Active Elements (AREA)
HK98106540A 1989-06-05 1998-06-25 Digitally controlled field effect attenuator devices HK1007361A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US07/361,470 US5001524A (en) 1989-06-05 1989-06-05 Digitally controlled field effect attenuator devices
EP90119958A EP0481113B1 (en) 1989-06-05 1990-10-18 Digitally controlled field effect attenuator devices
HK98106540A HK1007361A1 (en) 1989-06-05 1998-06-25 Digitally controlled field effect attenuator devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/361,470 US5001524A (en) 1989-06-05 1989-06-05 Digitally controlled field effect attenuator devices
HK98106540A HK1007361A1 (en) 1989-06-05 1998-06-25 Digitally controlled field effect attenuator devices

Publications (1)

Publication Number Publication Date
HK1007361A1 true HK1007361A1 (en) 1999-04-09

Family

ID=26316734

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98106540A HK1007361A1 (en) 1989-06-05 1998-06-25 Digitally controlled field effect attenuator devices

Country Status (3)

Country Link
US (1) US5001524A (xx)
EP (1) EP0481113B1 (xx)
HK (1) HK1007361A1 (xx)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5220194A (en) * 1989-11-27 1993-06-15 Motorola, Inc. Tunable capacitor with RF-DC isolation
US5309048A (en) * 1992-09-24 1994-05-03 Itt Corporation Distributed digital attenuator
US5281928A (en) * 1992-10-26 1994-01-25 M/A-Com, Inc. Electronic attenuator
US6420923B1 (en) * 2000-07-12 2002-07-16 Motorola, Inc. Low supply, current-controlled FET Pi attenuator
US8710899B2 (en) * 2008-09-17 2014-04-29 Lockheed Martin Corporation Stepped delay control of integrated switches
US10772193B1 (en) * 2019-10-29 2020-09-08 Ttm Technologies Inc. Wideband termination for high power applications

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4511813A (en) * 1981-06-12 1985-04-16 Harris Corporation Dual-gate MESFET combiner/divider for use in adaptive system applications
US4684965A (en) * 1983-05-09 1987-08-04 Raytheon Company Monolithic programmable attenuator
US4734751A (en) * 1985-05-20 1988-03-29 General Electric Company Signal scaling MESFET of a segmented dual gate design
US4875023A (en) * 1988-05-10 1989-10-17 Grumman Aerospace Corporation Variable attenuator having voltage variable FET resistor with chosen resistance-voltage relationship
EP0360916A1 (de) * 1988-09-30 1990-04-04 Siemens Aktiengesellschaft Monolithisch integrierbares Mirkowellen-Dämpfungsglied

Also Published As

Publication number Publication date
EP0481113B1 (en) 1997-02-12
US5001524A (en) 1991-03-19
EP0481113A1 (en) 1992-04-22

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)