GR1005410B - A method to deposit multitude polymer materials for chemically sensitive arrays - Google Patents

A method to deposit multitude polymer materials for chemically sensitive arrays

Info

Publication number
GR1005410B
GR1005410B GR20060100040A GR20060100040A GR1005410B GR 1005410 B GR1005410 B GR 1005410B GR 20060100040 A GR20060100040 A GR 20060100040A GR 20060100040 A GR20060100040 A GR 20060100040A GR 1005410 B GR1005410 B GR 1005410B
Authority
GR
Greece
Prior art keywords
polymer
new method
chemically sensitive
deposition
array
Prior art date
Application number
GR20060100040A
Other languages
Greek (el)
Inventor
Ιωαννης Ραπτης
Δημητριος Γουστουριδης
Σταυρος Χατζανδρουλης
Μαρια Κιτσαρα
Original Assignee
Εκεφε "Δημοκριτος"
Ιωαννης Ραπτης
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Εκεφε "Δημοκριτος", Ιωαννης Ραπτης filed Critical Εκεφε "Δημοκριτος"
Priority to GR20060100040A priority Critical patent/GR1005410B/en
Publication of GR1005410B publication Critical patent/GR1005410B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)

Abstract

A new method for the deposition of a multitude of polymer materials on the same transducer substrate, to be used as chemically sensitive layers using photolithographic techniques is described. The method can be used for the fabrication of chemicallysensitive arrays using polymer sensitive layers and different transduction principles. The process is a delicate balance between key lithographic parameters like exposure dose, material tone and developers used. The use of lithographic processes allows the deposition of polymer films at any selected pattern for a wide film thickness range (typically a few nanometers up to several micrometers). The new method is particularly useful in the fabrication of chemical sensing arrays where polymers with varying sensitivities and selectivities are required. In an example application, an array of conductive polymer chemical sensing devices may be fabricated by applying the new method to polymers which have been synthesized by adding conductive fillers. Using the same new method different polymer materials may be deposited and placed between a respective first and second electrode thus forming an array of capacitors acting as chemically sensitive devices. In another example application, the new method may be used for the deposition of polymer on flexible silicon members to form an array of silicon/polymer bimorph chemically sensitive devices operating either in resonance or static bending.
GR20060100040A 2006-01-20 2006-01-20 A method to deposit multitude polymer materials for chemically sensitive arrays GR1005410B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GR20060100040A GR1005410B (en) 2006-01-20 2006-01-20 A method to deposit multitude polymer materials for chemically sensitive arrays

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GR20060100040A GR1005410B (en) 2006-01-20 2006-01-20 A method to deposit multitude polymer materials for chemically sensitive arrays

Publications (1)

Publication Number Publication Date
GR1005410B true GR1005410B (en) 2007-01-31

Family

ID=36972780

Family Applications (1)

Application Number Title Priority Date Filing Date
GR20060100040A GR1005410B (en) 2006-01-20 2006-01-20 A method to deposit multitude polymer materials for chemically sensitive arrays

Country Status (1)

Country Link
GR (1) GR1005410B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986001313A1 (en) * 1984-08-13 1986-02-27 Ncr Corporation Process for forming a layer of patterned photoresist
US6178066B1 (en) * 1998-05-27 2001-01-23 Read-Rite Corporation Method of fabricating an improved thin film device having a small element with well defined corners
EP0851295B1 (en) * 1996-12-27 2001-10-24 Mimotec SA Process for the fabrication of microstructures by multilayer conformation of a photosensitive resin et microstructures obtained therewith
US20020122918A1 (en) * 2001-03-05 2002-09-05 Dentinger Paul Michael Multiple wavelength photolithography for preparing multilayer microstructures
US6509137B1 (en) * 2000-02-10 2003-01-21 Winbond Electronics Corp. Multilayer photoresist process in photolithography
US20030215753A1 (en) * 2002-05-17 2003-11-20 Fan-Gang Tseng Fabrication method of a three-dimensional microstructure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986001313A1 (en) * 1984-08-13 1986-02-27 Ncr Corporation Process for forming a layer of patterned photoresist
EP0851295B1 (en) * 1996-12-27 2001-10-24 Mimotec SA Process for the fabrication of microstructures by multilayer conformation of a photosensitive resin et microstructures obtained therewith
US6178066B1 (en) * 1998-05-27 2001-01-23 Read-Rite Corporation Method of fabricating an improved thin film device having a small element with well defined corners
US6509137B1 (en) * 2000-02-10 2003-01-21 Winbond Electronics Corp. Multilayer photoresist process in photolithography
US20020122918A1 (en) * 2001-03-05 2002-09-05 Dentinger Paul Michael Multiple wavelength photolithography for preparing multilayer microstructures
US20030215753A1 (en) * 2002-05-17 2003-11-20 Fan-Gang Tseng Fabrication method of a three-dimensional microstructure

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
C. T. HORNG ET AL.: "Superimposition of Photoresist Patterns", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 26, no. 3B, 1 August 1983 (1983-08-01), New York, US, pages 1728, XP002400151 *

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