GB998166A - Improvements relating to the growth of whiskers - Google Patents

Improvements relating to the growth of whiskers

Info

Publication number
GB998166A
GB998166A GB13280/60A GB1328060A GB998166A GB 998166 A GB998166 A GB 998166A GB 13280/60 A GB13280/60 A GB 13280/60A GB 1328060 A GB1328060 A GB 1328060A GB 998166 A GB998166 A GB 998166A
Authority
GB
United Kingdom
Prior art keywords
whiskers
substrate
heating
wool
foam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB13280/60A
Inventor
Noel James Parratt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TI Group Services Ltd
Original Assignee
TI Group Services Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TI Group Services Ltd filed Critical TI Group Services Ltd
Priority to GB13280/60A priority Critical patent/GB998166A/en
Publication of GB998166A publication Critical patent/GB998166A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005Growth of whiskers or needles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/20Aluminium oxides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/38Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)

Abstract

Whiskers of refractory material, e.g. silicon nitride, silicon carbide, aluminium nitride, alumina, or magnesia, are formed in a furnace by deposition from the vapour phase in the pores or interstices of a permeable refractory substrate of porous or fibrous form, deposition being continued until the pores or interstices are substantially filled with whiskers, the mass of whiskers being removed from the furnace with the substrate still in it. The substrate may resemble a foam or honeycomb, layers of woven cloth or gauze, or a loose mass of wool, e.g. a carbon wool formed by heating rayon or cotton wool fibres at 300-350 DEG C. and subsequently stoving at 1000 DEG C., a carbon foam formed by heating sugar, or alumina foam prepared by heating an aluminium salt, e.g. ammonium alum, to 1000 DEG C. The whiskers may subsequently be at least partially separated from the substrate by mechanical or chemical means, e.g. by dissolving the substrate or by burning it away. The whiskers which may contain up to 10% substrate are used as reinforcing fibres.
GB13280/60A 1960-04-13 1960-04-13 Improvements relating to the growth of whiskers Expired GB998166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB13280/60A GB998166A (en) 1960-04-13 1960-04-13 Improvements relating to the growth of whiskers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB13280/60A GB998166A (en) 1960-04-13 1960-04-13 Improvements relating to the growth of whiskers

Publications (1)

Publication Number Publication Date
GB998166A true GB998166A (en) 1965-07-14

Family

ID=10020100

Family Applications (1)

Application Number Title Priority Date Filing Date
GB13280/60A Expired GB998166A (en) 1960-04-13 1960-04-13 Improvements relating to the growth of whiskers

Country Status (1)

Country Link
GB (1) GB998166A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3326636A (en) * 1965-02-15 1967-06-20 United States Steel Corp Method of making magnesium oxide fibers
US4532182A (en) * 1981-12-29 1985-07-30 Atlantic Richfield Company Silicon carbide whisker sheet composites
EP0935015A1 (en) * 1998-02-04 1999-08-11 Toyota Jidosha Kabushiki Kaisha Method for producing whisker-forming alumina and alumina fibers and composite piston of alumina fibers
CN101671196B (en) * 2009-09-23 2012-08-22 北京航空航天大学 Preparation method of carbon foam heat insulating material added with potassium hexatitanate whiskers
CN106904973A (en) * 2017-02-22 2017-06-30 南京航空航天大学 A kind of carbon-based heat insulation composite material of the foam of high-strength light

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3326636A (en) * 1965-02-15 1967-06-20 United States Steel Corp Method of making magnesium oxide fibers
US4532182A (en) * 1981-12-29 1985-07-30 Atlantic Richfield Company Silicon carbide whisker sheet composites
US4634608A (en) * 1981-12-29 1987-01-06 Atlantic Richfield Company Method of making silicon carbide whisker sheet composites
EP0935015A1 (en) * 1998-02-04 1999-08-11 Toyota Jidosha Kabushiki Kaisha Method for producing whisker-forming alumina and alumina fibers and composite piston of alumina fibers
CN101671196B (en) * 2009-09-23 2012-08-22 北京航空航天大学 Preparation method of carbon foam heat insulating material added with potassium hexatitanate whiskers
CN106904973A (en) * 2017-02-22 2017-06-30 南京航空航天大学 A kind of carbon-based heat insulation composite material of the foam of high-strength light
CN106904973B (en) * 2017-02-22 2020-07-24 南京航空航天大学 Light high-strength foam carbon-based heat-insulating composite material

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